HB-S Rectifier
Abstract: KA2 v0 diode b3l 15a negetive diode
Text: I N T E R N A TI ON AL RECTIFIER lIO R lin t e r n a t io n a l "t Ì Dlf 4A554S2 □□□?□□? i T “ 3-5 “ /? Data Sheet No. PD-3.155 r e c t if ie r S23AF & S23AFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 fjs 430 AMP RMS, RING AMPLIFYING GATE
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S23AF
S23AFH
S23AF
S23AF6A.
S54S2
HB-S Rectifier
KA2 v0
diode b3l
15a negetive diode
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AL 60 dv 1419
Abstract: No abstract text available
Text: 4A554S3 0015*134 034 • International ;i»r Rectifier HEXFET Power MOSFET • • • • INR PD-9.849 IRLIZ44G INTERNATIO NAL R E C T IF IE R bSE I> Isolated Package High Voltage lsolation= 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Logic-Level Gate Drive
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4A554S3
IRLIZ44G
O-220
AL 60 dv 1419
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70U30
Abstract: so42 70U40 diode 300U40A 70U120 300U40A 300u80 70U10 DIN41887 70U20
Text: _ INTERNATIONAL RECTIFIER T 73 | Data Sheg.t No. PD-2.090A 4A554S5 □□073Sti T-0 hX3 4 | INTERNATIONAL RECTIFIER IOR 7OU, 300U-A SERIES 8 5 0 and 3 0 0 Amp Avg Power Silicon Rectifier Diodes Major Ratings and Characteristics Description and Features
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300U-A
300U-A,
302U-A
K41-0232
-16UNF
DIN41887
A10U1
70U30
so42
70U40
diode 300U40A
70U120
300U40A
300u80
70U10
DIN41887
70U20
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Untitled
Abstract: No abstract text available
Text: International S ] Rectifier HEXFET® Power MOSFET • • • • • • 4A55452 □014StlS 115 « I N R PD-9.593B IRC840 INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Current Sense Fast Switching Ease of Paralleling Simple Drive Requirements
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4A55452
014St
IRC840
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Untitled
Abstract: No abstract text available
Text: E?R R ectifie PD-9.3261 4A554S2 D014baD 3fl4 H I N R International INTERNATIONAL RECTIFIER E5E ]> IR F610 HEXFET P o w e r M O S F E T • • • • • Dynam ic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirem ents
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4A554S2
D014baD
O-220
IRF610
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER fc.SE » m 4A55452 Q D 1 L.2 S 7 1 SB • INR Bulletin E27101 International lÜ ] Rectifier IRFK3DC50,IRFK3FC50 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration High Current Capability. UL recognised E78996. Electrically Isolated Base Plate.
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4A55452
E27101
IRFK3DC50
IRFK3FC50
E78996.
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international rectifier p
Abstract: n5204
Text: international rectifier î“ — i — - -— — 48 55452 SS - - - INTERNATIONAL ÏMf|4a554S2 00047=15 4 - R EC flFlER 55C 04795 D Data Sheet No. PD-3.081A
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4a554S2
SN681
2N5204
2N681-92
2N5204-07
2N681
international rectifier p
n5204
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1RF620S
Abstract: No abstract text available
Text: International k ?r Rectifier • PD-9.900 _ IRF620S INTERNATIONAL RECTIFIER HEXFET Power MOSFET • • • • • • • 4A554S2 0014704 b4fi ■ INR Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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IRF620S
4A554S2
SMD-220
4ASS452
1RF620S
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B25DC
Abstract: ir e.78996 B25DS E.78996 scr 78996 diode
Text: International HÖR]Rectifier , • 4A55452 0ülbSb3 IT T « I N R INTERNATIONAL RECTIFIER bSE B25DC/DA/DS/CS/JS SCR I SCR and DIODE / SCR Power Modules in B- package Features I Glass passivated junctions fo r greater reliability I E lectrically isolated base plate 3500V RMS
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4A55452
B25DC/DA/DS/CS/JS
B25DC
554S2
GGlbS70
20ohm
65ohm
B25DC
ir e.78996
B25DS
E.78996 scr
78996 diode
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Untitled
Abstract: No abstract text available
Text: INTERNATIONAL RECTIFIER XOH 73 dF | 4A554S5 QD0bTÖ3 4 | ~ T- Data Sheet No. PD-3.151 i n t e r n a t i o n a l r e c t i f ie r S34DF & S34DFH SERIES 800-600 VOLTS RANGE STANDARD TURN-OFF TIME 12 ¿/s 400 AMP RMS, RING AMPLIFYING GATE INVERTER TYPE STUD MOUNTED SCRs
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4A554S5
S34DF
S34DFH
S340P
S340FH
O-118)
1-12UNF-2A
T0-209AD
T0-108)
S34DGF8A0.
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Untitled
Abstract: No abstract text available
Text: HE D | 4A554 55 QOGc343t. 1 | Data Sheet No. PD-9.383D INTERNATIONAL RECTIFIER 7 " -/? -/? IN T E R N A T IO N A L . R E C T IF IE R HEXFET TRANSISTORS P-CHASMNEL POWER MOSFETs TO-39 PACKAGE I O R IRFFS220 IRFF9221 G IRFF9SSS IRFF9SS3 Features: -200 Volt, 1.5 Ohm HEXFET
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4A554
IRFFS220
IRFF9221
G-418
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Untitled
Abstract: No abstract text available
Text: International k ?r Rectifier I HEXFET Power MOSFET INTERNATIONAL RECTIFIER • • • • • 4A55452 0013146 371 H I N R PD-9.834 IRFI720G Isolated Package High Voltage Isolations 2.5KVRMS Sink to Lead Creepage Dist.= 4.8mm Dynamic dv/dt Rating Low Thermal Resistance
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4A55452
IRFI720G
O-220
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R300 diodes
Abstract: international rectifier R300 10B0 R300 R30D HIN35 cf rh ir R300
Text: INTERNATIONAL RECTIFIER ^ 3C 0 7 2 G 4 d 'T - o / ^ II O R I i n t e r n a t i o n a l , r e c t i f i e r - •- Data Sheet n o . ku-z.i40 “ - - 73 D | 4A5545E 00u7dD4 3 ■ ■ R30D & R30DR SERIES 1000 - 400 VOLTS RANGE 450 AMP AVG STUD MOUNTED
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5545E
R30DR
R30DRBA.
S5452
D0D750Ã
R300 diodes
international rectifier R300
10B0
R300
R30D
HIN35
cf rh
ir R300
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PDF
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TIC33
Abstract: dt t3d 13 040B 75HQ 75HQ035 85HQ 85HQ030 85HQ035 DO-203AB 7666A
Text: INTERNATIONAL RECTIFIER 48 55452 liS INTERNATIONAL DE I 4A554S2 D0DS1S7 55C RECTIFIER 05127 Data Sheet No. PD-2.040B INTERNATIONAL RECTIFIER X O R 3 75HQ, 85HQ SERIES 7 5 and 8 5 Amp Schottky Power Rectifiers Major Ratings and Characteristics Rating Characteristic
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DDD51H7
1750C.
TIC33
dt t3d 13
040B
75HQ
75HQ035
85HQ
85HQ030
85HQ035
DO-203AB
7666A
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2N7224 JANTXV
Abstract: 3000CL 2N7224 IRFM150
Text: Data Sheet No. PD-9.487C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM150 SN7SS4 JANTXSN7SS4 JANTXV2N7224 ;n N-CHANNEL [REF: M IL-S-19500/59S] Product Summary 100 Volt, 0.07 Ohm HEXFET The HEXFET® technology is the key to International
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IRFM150
MIL-S-19500/595]
IRFM150D
IRFM150U
O-254
MIL-S-19500
S5M52
2N7224 JANTXV
3000CL
2N7224
IRFM150
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PDF
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H270
Abstract: KU ll 14a IRFI460 IRFI460D IRFI460U SS452
Text: Data Sheet No. PD-9.818 I N T E R N A T I O N A L R E C T I F I E R I R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFI460 N -C H A N N E L 500 Volt, 0.27 Ohm HEXFET Product Summary The HEXFET® technology is the key to International
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IRFI460D
IRFI460U
O-259
MIL-S-19500
SSM52
H270
KU ll 14a
IRFI460
IRFI460D
IRFI460U
SS452
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IG8T
Abstract: DIODE 65A IRGKI065F06 82FL
Text: International B Rectifier PD-9.965C IRGKI065F06 Fast Speed IGBT "CHOPPER" IGBT INT-A-PAK VŒ = 600V • Rugged Design •Simple gate-drive • Fast operation up to 10KHz hard switching, or 50KHz resonant • Switching-Loss Rating includes all "tail" losses
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IRGKI065F06
10KHz
50KHz
100nH
C-170
IG8T
DIODE 65A
IRGKI065F06
82FL
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IRF1010
Abstract: IRF734 SS452
Text: PD-9.999 International H ü Rectifier IRF734 HEXFET Pow er M O S F E T • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Description Third G eneration H E X F E T s from International R ectifier provide the de sig ner
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IRF734
O-220
Dra720403
D-6380
IRF1010
IRF734
SS452
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k 3525 MOSFET
Abstract: IRFR110 FR110 ir 9524B fr110 FR110 b optron IRFR111 IRFU110 IRFU111
Text: HE T-35-25 Data Sheet No. PD-9.524B D I 4055452 aoaö27b Ü | INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I«R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFR110 ÎRFR111 IRFU110 IRFU111 HEXFET TRANSISTORS ' ] N -C H A N N E L
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000027b
T-35-25
IRFR11Q
RFR111
IRFU110
IRFU111
IRFR110,
IRFR111,
IRFU110,
IRFU111
k 3525 MOSFET
IRFR110
FR110 ir
9524B
fr110
FR110 b
optron
IRFR111
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PDF
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irfae42
Abstract: JRFAE42
Text: he o I qassqsa oocnasq y | Data Sheet No. PD-9.579A INTERNATIONAL RECTIFIER T ^ T - fS ' INTERNATIONAL RECTIFIER IÖR REPETITIVE AVALANCHE AND dv/dt RATED IRFAE40 IRFAE42 HEXFET TRANSISTORS N-CHANNEL 800 Volt, 2.0 Ohm HEXFET TO-204AA TO-3 Hermetic Package
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IRFAE40
IRFAE42
O-204AA
G-237
IRFAE40,
IRFAE42
S54S2
G-238
JRFAE42
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PDF
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Untitled
Abstract: No abstract text available
Text: Bulletin 125190/B International S Rectifier ST700C.L s e r ie s PHASE CONTROL THYRISTORS Hockey Puk Version Features C e n te r a m p lify in g g a te M e ta l c a s e w ith c e ra m ic in s u la to r In te rn a tio n a l s ta n d a rd c a s e T 0 -2 0 0 A C B -P U K
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125190/B
ST700C.
002711b
D-327
D-332
0D27122
D-333
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1RFZ34
Abstract: STM TO-220 marking IRFZ34 IRFZ34 international
Text: International ioR Rectifier HEXFET Power MOSFET • • • • • 4Û5S452 0Q1577Ö STM « I N R PD-9.509B IRFZ34 bSE D INTERNATIONAL RECTIFIER Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements
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5S452
0Q1577Ö
IRFZ34
O-220
S5452
1RFZ34
STM TO-220 marking
IRFZ34
IRFZ34 international
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PDF
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Untitled
Abstract: No abstract text available
Text: International IQR Rectifier preliminary_IR F 7 3 4 3 HEXFET Power MOSFET • Generation V Technology • Ultra Low On-Resistance • Dual N and P Channel MOSFET • Surface Mount • Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier
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Untitled
Abstract: No abstract text available
Text: PD-2.473 International [ìq r ì Rectifier HFA80NC40C Ultrafast, Soft Recovery Diode HEXFRED" BASE COMMON CATHODE Features V r = 400V c • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters I 1' J V F = 1.3V _ Qrr*
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HFA80NC40C
500nC
Liguria49
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