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IXYS Corporation IXSH24N60A IGBT 600V 48A 150W TO247
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IXYS Corporation IXGH24N60A IGBT 600V 48A 150W TO247AD
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IXYS Corporation IXSH24N60AU1 IGBT 600V 48A 150W TO247
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DigiKey	IXSH24N60AU1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXGH24N60AU1 IGBT 600V 48A 150W TO247AD
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DigiKey	IXGH24N60AU1	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Micro Commercial Components MCU04N60A-TP MOSFET N-CHANNEL MOSFET
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DigiKey	MCU04N60A-TP	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

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4N60A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
4N60B Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-220F QW-R502-061 4N60B
4n60a Abstract: 4N60-A 3VD324600YL Text: 3VD324600YL 3VD324600YL 高压MOSFET芯片描述 ¾ 3VD324600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； ¾ 较高的雪崩能量； ¾ 漏源二极管恢复时间快；	Original	PDF	3VD324600YL 3VD324600YL 3VD324600YLN 600VMOS O-220 4N60A 600VVGS 10VID 30VVDS 4n60a 4N60-A
4N60B Abstract: UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60 Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-262 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-262 O-220F QW-R502-061 4N60B UTC4N60 4n60a 4N60-B 4n60 UTC 4N60L 4N60 TO-251 UTC 4n60l 4n60b TO220 mosfet 4n60
4N60B Abstract: mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60 Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	4N60L 4N60G QW-R502-061 4N60B mosfet 4n60 utc 4n60l 4n60a power mosfet switching 4n60b TO220 UTC4N60 4n60-b utc 4n60g 4n60
4n60a Abstract: 4N60-A 4n60 3VD324600YL Text: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION Ø 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; Ø Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	PDF	3VD324600YL 3VD324600YL O-220 4N60A; 3780m 4n60a 4N60-A 4n60
4N60B Abstract: 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-251 O-220F O-220F1 O-252 QW-R502-061 4N60B 4N60 TO-251 UTC 4n60b TO220 k4n60 4n60 mosfet 4n60 4N60 TO-220 UTC utc 4n60l 4n60l 4n60a
Untitled Abstract: No abstract text available Text: 3VD324600YL 3VD324600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD324600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology; ¾ Advanced termination scheme to provide enhanced voltage-blocking capability;	Original	PDF	3VD324600YL 3VD324600YL O-220 4N60A;
8N65 Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 產品變更通知 PRODUCT CHANGE NOTIFICATION PCN No. TITLE IC-PPCN-110605 xN60 MOSFET Part Number Change Issue Date Jun-29-2011 Page 1 of 2 變更主旨 TITLE : xN60系列取消檔次及650V產品變更品名 Bin code cancellation for xN60 series and part number change for 650V of xN60 series MOSFET Devices	Original	PDF	IC-PPCN-110605 Jun-29-2011 QR-0205-02 8N65
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 DESCRIPTION TO-220 The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-220F QW-R502-061
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	QW-R502-061
4N60B Abstract: 4n60-a 4n60a utc 4n60l mosfet 4n60 4N60 4n60b TO220 Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	4N60L QW-R502-061 4N60B 4n60-a 4n60a utc 4n60l mosfet 4n60 4N60 4n60b TO220
4n60a Abstract: 3VD324600YL 600VVGS Text: 3VD324600YL 3VD324600YL 高压MOSFET芯片描述 Ø 3VD324600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； Ø 先进的高压分压终止环结构； Ø 较高的雪崩能量； Ø 漏源二极管恢复时间快；	Original	PDF	3VD324600YL 3VD324600YL 3VD324600YLN 600VMOS O-220 4N60A 3780m 2780m 4n60a 600VVGS
utc 4n60l Abstract: 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220 Text: UNISONIC TECHNOLOGIES CO., LTD 4N60 Power MOSFET 4 Amps, 600/650 Volts N-CHANNEL POWER MOSFET 1 TO-220 DESCRIPTION The UTC 4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	O-220 O-220F O-220F1 QW-R502-061 utc 4n60l 4N60B 4n60e 4n60l 4N60G 4N60 UTC4N60 4n60a utc 4n60g 4n60b TO220
4N60R Abstract: 4n60 4n60a IXTM4N60 IXTP4N60 Text: I X Y S CORP 1ÖE D • 4bêb22b OOOObll S ■ IXTP4N60, IXTM4N60 □ IX Y S 4 A M P S , 6 0 0 V, 2.1S2/2.4Q M A X IM U M R A T IN G S _ I Parameter Sym. Drain-Source Voltage (1 Drain-Gate Voltage (RGS=1.Q MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	PDF	IXTP4N60, IXTM4N60 IXTP4N60 IXTM4N60 O-220 300jjs, 4N60R 4n60 4n60a

equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	PDF	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40