NTE56039
Abstract: No abstract text available
Text: NTE56039 TRIAC, 4A Sensitive Gate Description: The NTE56039 is a glass passivated TRIAC in a plastic SOT89 type package designed for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four
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NTE56039
NTE56039
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2DD2098
Abstract: KP3Q 4A SOT89 MARKING CODE
Text: 2DB1386Q/R 20V PNP MEDIUM POWER TRANSISTOR IN SOT89 Features Mechanical Data • BVCEO > -20V IC = -5A high Continuous Current Low saturation voltage VCE sat < -1V @ -4A Case Material: Molded Plastic, "Green” Molding Compound. UL Flammability Classification Rating 94V-0
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2DB1386Q/R
2DD2098
AEC-Q101
J-STD-020
MIL-STD-202,
DS31147
KP3Q
4A SOT89 MARKING CODE
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)
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2SB1386
2SB1386
OT-89
Figure12
QW-R208-019
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Untitled
Abstract: No abstract text available
Text: UTC 2SB1386 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY TRANSISTOR DESCRIPTION The UTC 2SB1386 is an epitaxial planar type PNP silicon transistor. 1 FEATURES *Excellent DC current gain characteristics *Low VCE sat VCE(sat)= -0.35V (Typ) (Ic/IB = -4A/-0.1A)
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2SB1386
2SB1386
OT-89
QW-R208-019
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PDF
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2SB1386
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L
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2SB1386
OT-89
2SB1386L
2SB1386-x-AB3-F-R
2SB1386L-x-AB3-F-R
QW-R208-019
2SB1386
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 ORDERING INFORMATION Order Number Lead Free
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2SB1386
OT-89
2SB1386L-x-AB3-R
2SB1386G-x-AB3-R
OT-89
QW-R208-019
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TSB1386
Abstract: TSB1386CP TSB1386CY
Text: TSB1386 Low Frequency PNP Transistor BVCEO = - 20V Ic = - 5A VCE SAT , = - 0.35V(typ.) @Ic / Ib = - 4A / - 0.1A Pin assignment: 1. Base 2. Collector 3. Emitter Features Ordering Information Low VCE (SAT). Part No. Excellent DC current gain characteristics
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TSB1386
TSB1386CP
TSB1386CY
O-252
OT-89
OT-89
TSB1386
TSB1386CP
TSB1386CY
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PDF
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) ORDERING INFORMATION Order Number 2SB1386G-x-AB3-R
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2SB1386
2SB1386G-x-AB3-R
OT-89
QW-R208-019
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2SB1386
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 2SB1386 PNP SILICON TRANSISTOR LOW FREQUENCY PNP TRANSISTOR 1 FEATURES * Excellent DC current gain characteristics * Low VCE SAT VCE(SAT)= -0.35V (Typ) (IC/IB = -4A/-0.1A) SOT-89 *Pb-free plating product number: 2SB1386L ORDERING INFORMATION
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Original
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2SB1386
OT-89
2SB1386L
2SB1386-x-AB3-R
2SB1386L-x-AB3-R
QW-R208-019
2SB1386
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GM9452
Abstract: No abstract text available
Text: Pb Free Plating Product ISSUED DATE :2005/09/14 REVISED DATE : GM9452 BVDSS RDS ON ID N-CHANNEL ENHANCEMENT MODE POWER MOSFET 20V 50m 4A Description The GM9452 provide the designer with the best combination of fast switching, ruggedized device design, low
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GM9452
GM9452
OT-89
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marking 4a sot-89
Abstract: sot89 MARKING 4A SOT89 transistor marking 4A 4A marking transistor MARK 4A KIA7419F transistor 4a marking MARKING 4a 4A SOT89
Text: SEMICONDUCTOR KIA7419F MARKING SPECIFICATION SOT-89 PACKAGE 1. Marking method Laser Marking 2. Marking No. Item Marking Description Device Mark 4A KIA7419F * Grade - - Lot No. 816 1 2 8 Year 0 ~ 9 : 1900~1999 16 Week 16 : 16th Week Note * Grade: Transistor only
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KIA7419F
OT-89
marking 4a sot-89
sot89 MARKING 4A
SOT89 transistor marking 4A
4A marking transistor
MARK 4A
KIA7419F
transistor
4a marking
MARKING 4a
4A SOT89
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Untitled
Abstract: No abstract text available
Text: BL9582 32V 32V, 1.4 1.4A .4A LED StepStep-down High Brightness LED Driver with Internal Switch FEATURES DESCRIPTION Simple low parts count Internal 32V NDMOS switch Up to 1.4A output current Single pin on/off and brightness control using DC voltage or PWM
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BL9582
Step32V,
OT89-5
BL9582
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Untitled
Abstract: No abstract text available
Text: Ordering number : EN6307C 2SA2013/2SC5566 Bipolar Transistor http://onsemi.com - 50V, (-)4A, Low VCE(sat), (PNP)NPN Single PCP Applicaitons • Relay drivers, lamp drivers, motor drivers, flash Features • • • • • Large current capacity Adoption of FBET and MBIT processes
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EN6307C
2SA2013/2SC5566
2SA2013
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SOT89 transistor marking 4A high frequency
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SD2098PT SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A)
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2SD2098PT
SC-62/SOT-89
SC-62/SOT-89)
SOT89 transistor marking 4A high frequency
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Untitled
Abstract: No abstract text available
Text: TSB1386 Low Frequency PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -30V BVCEO -20V IC -5A VCE SAT Features Ordering Information Low VCE(SAT) -0.35 @ IC / IB = -4A / -100mA (Typ.) Excellent DC current gain characteristics
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TSB1386
OT-89
-100mA
TSB1386CY
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transistor a09
Abstract: marking 4a sot-89 sot-89 MARKING CODE 4A sot-89 marking code 5A "PNP Transistor" marking 3A sot-89 TSB1386 TSB1386CY SOT89 transistor marking 5A SOT89 MARKING CODE 5A
Text: TSB1386 Low Frequency PNP Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO -30V BVCEO -20V IC -5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) -0.35 @ IC / IB = -4A / -100mA (Typ.) Excellent DC current gain characteristics
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TSB1386
OT-89
-100mA
TSB1386CY
transistor a09
marking 4a sot-89
sot-89 MARKING CODE 4A
sot-89 marking code 5A
"PNP Transistor"
marking 3A sot-89
TSB1386
SOT89 transistor marking 5A
SOT89 MARKING CODE 5A
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2SD2098GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SD2098GP SMALL FLAT NPN Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE SC-62/SOT-89 * Small flat package. SC-62/SOT-89 * Low saturation voltage VCE(sat)=0.25V(Typ.)(IC/IB=4A/0.1A)
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2SD2098GP
SC-62/SOT-89
SC-62/SOT-89)
2SD2098GP
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Untitled
Abstract: No abstract text available
Text: AP9452GG RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Lower gate charge BVDSS D 20V RDS ON Capable of 2.5V gate drive Single Drive Requirement 50m ID G 4A S Description D Advanced Power MOSFETs from APEC provide the
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AP9452GG
OT-89
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M3331
Abstract: No abstract text available
Text: AP9452AGG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower Gate Charge D ▼ Capable of 2.5V Gate Drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant & Halogen-Free 4A
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AP9452AGG-HF
OT-89
100us
100ms
M3331
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9452 sot-89
Abstract: mosfet 9452 gs 9452 9452 marking code CODE 9452 SOT-89 9452 mosfet AP9452GG-HF
Text: AP9452GG-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Lower gate charge D ▼ Capable of 2.5V gate drive ▼ Single Drive Requirement BVDSS 20V RDS ON 50mΩ ID G ▼ RoHS Compliant 4A S Description D
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AP9452GG-HF
OT-89
9452 sot-89
mosfet 9452
gs 9452
9452 marking code
CODE 9452 SOT-89
9452 mosfet
AP9452GG-HF
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transistor p86
Abstract: transistor p86 sot-89 v5000 p86 marking
Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386PT SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)
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2SB1386PT
SC-62/SOT-89
SC-62/SOT-89)
SC-62/SOT-89OR
-10mA
-40mA
-35mA
-30mA
-25mA
-20mA
transistor p86
transistor p86 sot-89
v5000
p86 marking
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SOT89 transistor marking 4A
Abstract: marking 4a sot-89 Marking BH SOT89 BTB1427M3 sot-89 MARKING CODE 4A BTB1386M3 4A SOT89 MARKING CODE
Text: CYStech Electronics Corp. Spec. No. : C816M3-A Issued Date : 2003.05.26 Revised Date : 2005.11.28 Page No. : 1/5 Low Vcesat PNP Epitaxial Planar Transistor BTB1427M3 Features • Low VCE sat , VCE(sat)=-0.6 V (typical), at IC / IB = -4A / -0.1A • Excellent DC current gain characteristics
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C816M3-A
BTB1427M3
OT-89
UL94V-0
SOT89 transistor marking 4A
marking 4a sot-89
Marking BH SOT89
BTB1427M3
sot-89 MARKING CODE 4A
BTB1386M3
4A SOT89 MARKING CODE
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2SB1386GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD 2SB1386GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 20 Volts CURRENT 5 Amperes APPLICATION * Power driver and Strobe Flash . FEATURE * * * * SC-62/SOT-89 Small flat package. SC-62/SOT-89 Low saturation voltage VCE(sat)=-0.35V(Typ.)(IC/IB=-4A/-0.1A)
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2SB1386GP
SC-62/SOT-89
SC-62/SOT-89)
SC-62/SOT-89TOR
-10mA
-40mA
-35mA
-30mA
-25mA
-20mA
2SB1386GP
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transistor B 560
Abstract: HFG TRANSISTOR 2SD2098 SOT89 transistor marking 4A rohm surface mounted transistor series
Text: 2SD2098 Transistor, NPN Features Dimensions Units : mm • available in MPT3 (MPT, SOT-89, SC-62) package • package marking: 2SD2098; D J ^ , where ★ is hFE code • low collector saturation voltage, typically VCE(sat) = 0.3 V for lC/lB - 4A/0.1 A •
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OCR Scan
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2SD2098
OT-89,
SC-62)
2SD2098;
2SD2098
transistor B 560
HFG TRANSISTOR
SOT89 transistor marking 4A
rohm surface mounted transistor series
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