Untitled
Abstract: No abstract text available
Text: • { H Y U N D A HY62V256 Series I 32K X 8-bit CMOS SRAM DESCRIPTION The HV62V256 is a high-speed, low power and 32,768 x 8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. The HY62V256 has a data retention mode that guarantees
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HY62V256
HV62V256
55/70/85/100ns
100/120/150ns
1DC03-11-MAY95
HY62V256LP
HY62V256LJ
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Untitled
Abstract: No abstract text available
Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The HY5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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16-bit
HY5116160
16-bit.
HY5116160
1AD11-10-MAY95
HY5116160JC
HY5116160SLJC
HY5116160TC
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Untitled
Abstract: No abstract text available
Text: HY51V64800 Series "HYUNDAI 8Mx 8-bit CMOS DRAM ADVANCED INFORMATION DESCRIPTION The HY51V64800 is the new generation and fast dynamic RAM organized 8,388,608 x 8-bit. The HY51V64800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide
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HY51V64800
HY51V64800
512ms
A0-A12*
4b75D6B
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Untitled
Abstract: No abstract text available
Text: ‘ HYUNDAI HYM536410A M-Series 4M X 36-bit CMOS DRAM MODULE DESCRIPTION The HYM53641OA is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of eight HY5117400A in 24/26 pin SOJ or TSOPII and four HY514100A in 20/26 pin SOJ or TSOPII on a 72 pin glass-epoxy printed circuit board.
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HYM536410A
36-bit
HYM53641OA
HY5117400A
HY514100A
HYM53641OAM/ALM/ATM/ALTM
HYM53641OAMG/ALMG/ATMG/ALTMG
13W72
HYM536410A/AL
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