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Untitled Abstract: No abstract text available Text: HY51V4403B Series “H Y U N D A I 1M x 4-bit CMOS DRAM with 4CÄS DESCRIPTION The HY51V4403B is the new generation and fast dynamic RAM organized 1,048,576x4-bit. The HY51V4403B has four ¿ASs CAS0-3 w hich control corresponding data I/O port in conjunction with OE(eg.CASO controls DQO,	OCR Scan	PDF	HY51V4403B 576x4-bit. HY51V4403B 1AC16-10-MAY95 HY51V4403BJ HY51V4403BLJ
Untitled Abstract: No abstract text available Text: m V Y m I I I I 11 A I H Y 5 7 V 1 6 1 6 1 I V H U ft I S e r ie s 1M X 16 bit Synchronous DRAM PRELIMINARY DESCRIPTION The HY57V16161 is a very high speed 3.3 Volt synchronous dynamic RAM organized 1,048,476x16 bits, and fabricated with the Hyundai CMOS process. This dual bank circuit consists of two memories, each 524,288 words	OCR Scan	PDF	HY57V16161 476x16 4b75Gflfi 1SD03-00-MAY95 400mil 4b750flÃ
Untitled Abstract: No abstract text available Text: HY51V16100A Series •HYUNDAI 16Mx 1-bit CMOS DRAM PRELIMINARY DESCRIPTION The HY51V16100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY51V16100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques	OCR Scan	PDF	HY51V16100A 1AD21-00-MAY9S HY51V161OOA HY51V16100AJ HY51V16100ASU HY51V16100AT HY51V16100ASLT
Untitled Abstract: No abstract text available Text: •«HYUNDAI HYM5V64404A K-Series Unbuffered 4M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM5V64404A is a 4M x 64-bit EDO mode CMOS DRAM module consisting of sixteen HY51V16404A in 24/26 pin SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin giass-epoxy printed circuit board. 0.1	OCR Scan	PDF	HYM5V64404A 64-bit HY51V16404A HYM5V64404AKG/ATKG/ASLKG/ASLTKG A0-A11) DQ0-DQ63) DDDST42
A17a Abstract: HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A HY628400 tsop 338 IR 1A13 DA16 Text: HY628400 Series •HYUNDAI 512K X 8-bit CMOS SRAM PRELIMINARY DESCRIPTION The HY628400 is a high-speed, low power and 524,288x8-bits CMOS static RAM fabricated using Hyundai’s high performance twin tub CMOS process technology. This high reliability process coupled with innovative circuit	OCR Scan	PDF	HY628400 512KX 288x8-bits speed-55/70/85/100ns 1DE01 -11-MAY95 A17a HY628400LLG55 HY628400LLG 6da6 HY628400LG A18A tsop 338 IR 1A13 DA16
Untitled Abstract: No abstract text available Text: HY67V16100/101 »HYUNDAI 64K x 16 Bit SYNCHRONOUS CMOS SRAM PRELIMINARY DESCRIPTION This device integrates high-speed 64Kx16 SRAM core, address registers, data input registers, a 2-bit burst address counter and pipelined output. All synchronous inputs pass through registers controlled by a positive-edge	OCR Scan	PDF	HY67V16100/101 64Kx16 486/Pentium 7ns/12ns/17ns 67MHz 486/Pentium 1DH06-11-MAY9S HY67V16100/101 1DH06-11-MAY95