NE425S01
Abstract: NE425S01-T1 NE425S01-T1B
Text: PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz Noise Figure, NF dB
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NE425S01
NE425S01
NE425S01-T1
NE425S01-T1B
24-Hour
NE425S01-T1
NE425S01-T1B
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gunn diode ghz s-parameter
Abstract: impatt diode impatt C band FET transistor s-parameters fet dro 10 ghz x-band dro california bearing ratio test DRO lnb 25 MHz $ pin Crystal Oscillators THrough hole type Dielectric Resonator Oscillator DRO
Text: California Eastern Laboratories APPLICATION NOTE AN1035 Design Considerations for a Ku-Band DRO in Digital Communication Systems ABSTRACT the parts for the DRO and mechanical assembly will be presented. While the design proposed might not yield the optimum design solution for all DBS applications, it does introduce a few important DRO design techniques that can be applied to other high frequency communication systems.
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AN1035
p-7065.
AN1023,
gunn diode ghz s-parameter
impatt diode
impatt
C band FET transistor s-parameters
fet dro 10 ghz
x-band dro
california bearing ratio test
DRO lnb
25 MHz $ pin Crystal Oscillators THrough hole type
Dielectric Resonator Oscillator DRO
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NE34018 equivalent
Abstract: FET model AN1022 AN1033 NE34018 Alpha 1000 GaAsFET as 15-f
Text: California Eastern Laboratories APPLICATION NOTE AN1033 NonLinear HJ-FET Model Verification in a PCS Amplifier PCS Amplifier Design Part 3 I. Introduction Lower development costs and shorter times to market of telecommunication subsystems require effective and
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AN1033
AN1022
NE34018 equivalent
FET model
AN1022
AN1033
NE34018
Alpha 1000 GaAsFET
as 15-f
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BJT BF 331
Abstract: BF 331 50e3
Text: NONLINEAR MODEL NESG2021M05 CCBPKG SCHEMATIC CCB LCPKG LB LBPKG Base Collector CCE Q1 LE CCEPKG LEPKG CBEPKG BJT NONLINEAR MODEL PARAMETERS 1 Parameters Q1 Parameters Q1 Emitter ADDITIONAL PARAMETERS Parameters NESG2021M05 CCB 0.001 pF IS 4.429e-15 MJC 0.108
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NESG2021M05
429e-15
31e-3
324e-15
09e-3
100e-18
50e-3
9e-15
4e-15
4e-12
BJT BF 331
BF 331
50e3
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Q1104
Abstract: NE72218
Text: NE72218 Rank 58 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD Q1 LG_PKG LG 0.55nH 0.5nH LD_PKG DRAIN 0.76nH 0.1nH GATE CDS_PKG CGS_PKG 0.15pF LS 0.25nH 0.15pF CDX 0.02pF LS_PKG 0.05nH CGX 0.15pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1
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NE72218
003pF
1e-14
4e-12
27e-12
1e-10
85e-12
055e-12
2e-10
24-Hour
Q1104
NE72218
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Untitled
Abstract: No abstract text available
Text: NE429M01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF LD_PKG LD DRAIN LG_PKG 0.67nH 0.5nH Q1 LG GATE 0.62nH 0.5nH CCD_PKG 0.1pF CDX 0.14pF LS 0.16nH CGS_PKG 0.11pF LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1 Parameters
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003pF
NE429M01
1e-14
4e-12
07e-12
1e-10
04e-12
24-Hour
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1E-16
Abstract: No abstract text available
Text: NONLINEAR MODEL NE6510179A SCHEMATIC Q1 RDX 0.2 ohms LGX LG 0.001 nH 0.75 nH LD 0.65 nH LDX 0.01 nH DRAIN RDBX 400 ohms GATE CDS PKG 0.1 pF CBSX 100 pF CGS PKG 0.1 pF RSX 0.05 ohms LSX 0.001 nH SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameters Q1
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NE6510179A
1e-16
10e-12
5e-12
20e-12
4e-12
24-Hour
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL SCHEMATIC NE685M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 time seconds IS 8.98e-17 MJC 0.19 capacitance farads BF 107.1 XCJC inductance
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NE685M03
98e-17
02e-3
50e-12
11e-12
4e-12
13e-12
14e-12
08eries
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Untitled
Abstract: No abstract text available
Text: NONLINEAR MODEL SCHEMATIC NE856M03 Q1 CCBPKG CCB LCX LBX Collector LB Base CCE CCEPKG LE LEX Emitter BJT NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 IS 9.2e-16 MJC 0.55 capacitance farads BF 110.3 XCJC 0.3 inductance henries
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NE856M03
2e-16
89e-9
32e-11
8e-12
1e-12
4e-12
56e-18
856M03
087e-12
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PJ 3236
Abstract: 50E-12 20E-3 40E-12 OPA2604M
Text: * OPA2604M OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * "M" IS MULTIPLE POLE/ZERO TOPOLOGY * CREATED 7/8/92 BCB * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;
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OPA2604M
9E-15
1E-11
20E-3
304E3
PJ 3236
50E-12
20E-3
40E-12
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22S21
Abstract: NE329 NEC Ga FET marking A
Text: SUPER LOW NOISE HJ FET NE3210S01 OUTLINE DIMENSION FEATURES • SUPER LOW NOISE FIGURE: 0.35 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 2.0 ± 0.2 • HIGH ASSOCIATED GAIN: 13.5 dB TYP at f = 12 GHz • GATE LENGTH: LG ≤ 0.20 µm 2. 1 ± • GATE WIDTH: WG = 160 µm
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NE3210S01
NE3210S01
3210S01
24-Hour
22S21
NE329
NEC Ga FET marking A
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1uF SMD 1206 TANTALUM CAPACITOR 16V
Abstract: DIODE 1N4001 SMD 4k7 pot VARIABLE RESISTOR 1206 SMD Capacitor types smd transistor 2f DIODE 1N4001 4.7uF smd smd capacitor philips 0805 SMD Capacitor types 47uF smd
Text: AN/RF/RFDes_1/1 December 1999 The CMX017 and CMX018 Designer’s Notebook A collection of designer’s notes and other useful information Part 1-Alternative Peripheral Devices for the EV0171 and EV0181 Evaluation Boards The CMX017 and CMX018 represent CML’s latest RF Transmitter and Receiver ICs. These two devices enable the
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CMX017
CMX018
EV0171
EV0181
iE-12
2E-12
1uF SMD 1206 TANTALUM CAPACITOR 16V
DIODE 1N4001 SMD
4k7 pot VARIABLE RESISTOR
1206 SMD Capacitor types
smd transistor 2f
DIODE 1N4001
4.7uF smd
smd capacitor philips 0805
SMD Capacitor types
47uF smd
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BF 3027
Abstract: transistor T1J NESG2101M05-T1-A NESG2101M05 S21E nec 2562 GA1060 14851 mje 2055 1GP20
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:
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NESG2101M05
OT-343
NESG2101M05
BF 3027
transistor T1J
NESG2101M05-T1-A
S21E
nec 2562
GA1060
14851
mje 2055
1GP20
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NE325S01
Abstract: No abstract text available
Text: NE325S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Rgx 6 ohms Q1 0.6nH Rdx 6 ohms 0.69nH Lsx 0.07nH CGS_PKG 0.07pF CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS 1 UNITS Parameter Units Parameters Q1 Parameters Q1 VTO
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NE325S01
001pF
3e-13
3e-12
02e-12
24-Hour
NE325S01
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transistor T1J
Abstract: NEC 9319 bjt npn
Text: NEC's NPN SiGe NESG2101M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • HIGH OUTPUT POWER: P1dB = 21 dBm at 2 GHz • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz • HIGH MAXIMUM STABLE POWER GAIN:
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NESG2101M05
OT-343
transistor T1J
NEC 9319
bjt npn
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BV-1 501
Abstract: BF-960 spice model LT1715 spice model Transistor TT 2246 cd 6283 ic transistor KF 507 LT1716 spice model COMP1016 lt6234 spice model AUO-11307 R01
Text: linear.txt SPICE MODELS - LINEAR Technology Corp. LTC1150 * Version 2.0 Copyright Linear Technology Corp. 10/19/05. All rights reserved. * .SUBCKT LTC1150 3 2 7 4 6 ; +IN -IN V+ V- OUT * INPUT IB1 2 7 -10P IB2 3 7 10P RD1 4 80 2122.1 RD2 4 90 2122.1 M1 80 2 12 12 PM1
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LTC1150
LTC1150
5e-12
5e-11
2857E-11
65e-11
7124E-04
3e-11
9605e-8
74902E-10
BV-1 501
BF-960 spice model
LT1715 spice model
Transistor TT 2246
cd 6283 ic
transistor KF 507
LT1716 spice model
COMP1016
lt6234 spice model
AUO-11307 R01
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fds8896
Abstract: FDS8896 S
Text: FDS8896 N-Channel PowerTrench MOSFET 30V, 15A, 6.0mΩ Features General Description r DS ON = 6.0mΩ, VGS = 10V, ID = 15A This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM
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FDS8896
FDS8896
FDS8896 S
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Untitled
Abstract: No abstract text available
Text: FDD120AN15A0 N-Channel PowerTrench MOSFET 150 V, 14 A, 120 mΩ Features Applications • RDS on = 101 mΩ ( Typ.) @ VGS = 10 V, ID = 4 A • Consumer Appliances • QG(tot) = 11.2 nC ( Typ.) @ VGS = 10 V • LED TV • Low Miller Charge • Synchronous Rectification
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FDD120AN15A0
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JFET bf 245
Abstract: ISL28110
Text: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are
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ISL28110,
ISL28210
ISL28210,
ISL28110
ISL28210
5m-1994.
MS-012.
FN6639
JFET bf 245
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bf 331
Abstract: ic MAX 8997 ic 7804 bf331 Ic 9148 NESG2021M05 NESG2021M05-T1 S21E 285-2 MAG IC Nec 9002
Text: PRELIMINARY DATA SHEET NEC's NPN SiGe NESG2021M05 HIGH FREQUENCY TRANSISTOR FEATURES • HIGH BREAKDOWN VOLTAGE SiGe TECHNOLOGY VCEO = 5 V Absolute Maximum • LOW NOISE FIGURE: NF = 0.9 dB at 2 GHz NF = 1.3 dB at 5.2 GHz • HIGH MAXIMUM STABLE GAIN: MSG = 22.5 dB at 2 GHz
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NESG2021M05
OT-343
NESG2021M05
9e-15
4e-15
bf 331
ic MAX 8997
ic 7804
bf331
Ic 9148
NESG2021M05-T1
S21E
285-2 MAG IC
Nec 9002
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Untitled
Abstract: No abstract text available
Text: Precision Low Noise JFET Operational Amplifiers ISL28110, ISL28210 Features The ISL28110, ISL28210, are single and dual JFET amplifiers featuring low noise, high slew rate, low input bias current and offset voltage, making them the ideal choice for high impedance applications where precision and low noise are
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ISL28110,
ISL28210
ISL28210,
ISL28110
5m-1994.
MS-012.
FN6639
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op amp 741 model PSpice
Abstract: SSM2131S
Text: ANALOG DEVICES □ Ultra-Low Distortion, High Speed Audio Operational Amplifier SSM-2131 FEATURES The SSM-2131 's common-mode rejection of 80dB minimum over a± 1 1 range is exceptional for a high-speed amplifier. HighCMR, combined with a minimum 500V/mV gain into a 10kQ load en
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SSM-2131
00V/mV
40kHz,
2E-15
4E-11)
1E-15)
op amp 741 model PSpice
SSM2131S
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Untitled
Abstract: No abstract text available
Text: tm ä n S w it c h x- E123MUX Device s E1/E2/E3 MUX/DEMUX TXC-03361 DATA SHEET FEATURES DESCRIPTION ^ • • E1 2048 kbit/s multiplexer/demultiplexer for ITU-T Recommendations: G.742 (8448 kbit/s E2 frame format) G.751 (34368 kbit/s E3 frame format)
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E123MUX
TXC-03361
E12/E23
TXC-03361-MB
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a13468
Abstract: No abstract text available
Text: □RAWINTO MADE IN THIRD ANGLE PROJECTION T H I S DRAWI NG IS UNPUBLISHED. C COPYRIGHT 79 LOC RELEASED FOR PUBLICATION ,79 BY AMP INCORPORATED. ALL INTERNATIONAL RIGHTS RESERVED. DI ST AF 50 REVISIONS p F ZONE LTR D E SC R IP T IO N REDRAWN AF-6499 c 1 DATE
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AF-6499
a13468
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