UV-eprom programmer schematic
Abstract: 27 eprom programmer schematic EPROM 30 pin programmer schematic xc9536 cpld xilinx xc9536 Schematic XAPP079 4mbit prom ADR14 XC9536 HW-130
Text: XAPP079 September, 1997 Version 1.2 4Mbit Virtual SPROM Application Note Summary This application note describes the design of a very low cost, CPLD-based virtual SPROM for downloading programming information to the Xilinx high density XC4000-Series FPGAs.
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XAPP079
XC4000-Series
XC9500
UV-eprom programmer schematic
27 eprom programmer schematic
EPROM 30 pin programmer schematic
xc9536 cpld
xilinx xc9536 Schematic
4mbit prom
ADR14
XC9536
HW-130
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Untitled
Abstract: No abstract text available
Text: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification
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Pm39LV512
Pm39LV010
Pm39LV020
Pm39LV040
Pm39LV512:
Pm39LV010:
Pm39LV020:
Pm39LV040:
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Untitled
Abstract: No abstract text available
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512
IS39LV010
IS39LV040
IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
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Untitled
Abstract: No abstract text available
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512
IS39LV010
IS39LV040
IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
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39LV010
Abstract: 39lv512 PM39LV010-70VCE 39LV020 pm39lv512-70vce PM39LV512-70JCE PM39LV040-70JCE PM39LV040-70VC S5580 PM39LV010-70JCE
Text: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification
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Pm39LV512
Pm39LV010
Pm39LV020
Pm39LV040
Pm39LV512:
Pm39LV010:
Pm39LV020:
Pm39LV040:
Pm39LV512)
39LV010
39lv512
PM39LV010-70VCE
39LV020
pm39lv512-70vce
PM39LV512-70JCE
PM39LV040-70JCE
PM39LV040-70VC
S5580
PM39LV010-70JCE
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MSM6650
Abstract: No abstract text available
Text: E2D0087-39-21 This version: I/F Feb. 1999 MSM6650 4MegOTP BOARD Previous version: May 1997 ¡ Semiconductor MSM6650 4MegOTP I/F BOARD ¡ Semiconductor 4MegOTP Conversion Board 1. BOARD APPEARANCE t MSM6650/EPROM EVA ON OFF w STD CPU PARA SIRI r XT CR e 4Mbit EPROM
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E2D0087-39-21
MSM6650
MSM6650/EPROM
MSM6650
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PMC 39LV040
Abstract: 39lv512 39lv040 PM39LV512 PM39LV010-70VCE PM39LV040 39LV010 Programmable Microelectronics 11000H 70Vce
Text: PMC Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification
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Pm39LV512
Pm39LV010
Pm39LV020
Pm39LV040
Pm39LV512:
Pm39LV010:
Pm39LV020:
Pm39LV040:
PMC 39LV040
39lv512
39lv040
PM39LV010-70VCE
PM39LV040
39LV010
Programmable Microelectronics
11000H
70Vce
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Untitled
Abstract: No abstract text available
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512
IS39LV010
IS39LV040
IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
208mil
150mil
11x13mm)
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Untitled
Abstract: No abstract text available
Text: Pm39LV512 / Pm39LV010 / Pm39LV020 / Pm39LV040 512 Kbit / 1Mbit / 2Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES Single Power Supply Operation - Low voltage range: 2.7 V - 3.6 V • Automatic Erase and Byte Program - Build-in automatic program verification
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Pm39LV512
Pm39LV010
Pm39LV020
Pm39LV040
Pm39LV512:
Pm39LV010:
Pm39LV020:
Pm39LV040:
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MR27V401D
Abstract: MR27V401DMA MR27V401DRA MR27V401DTA
Text: ¡ Semiconductor 1A MR27V401D 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V401D is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MR27V401D operates on a single +3V-3.3V power supply and is TTL compatible.
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MR27V401D
288-Word
MR27V401D
32-pin
MR27V401DMA
MR27V401DRA
MR27V401DTA
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MR27V401D
Abstract: No abstract text available
Text: ¡ Semiconductor 1A MR27V401D 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V401D is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MR27V401D operates on a single +3V-3.3V power supply and is TTL compatible.
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MR27V401D
288-Word
MR27V401D
32-pin
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IS39LV010
Abstract: A114 ESD IS39LV040
Text: IS39LV512 / IS39LV010 / IS39LV040 512 Kbit / 1Mbit / 4Mbit 3.0 Volt-only CMOS Flash Memory FEATURES • Single Power Supply Operation - Low voltage range: 2.70 V - 3.60 V • Memory Organization - IS39LV512: 64K x 8 512 Kbit - IS39LV010: 128K x 8 (1 Mbit)
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IS39LV512:
IS39LV010:
IS39LV040:
IS39LV512)
208mil
150mil
11x13mm)
com22
IS39LV512
IS39LV010
A114 ESD
IS39LV040
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Untitled
Abstract: No abstract text available
Text: ¡ Semiconductor MR27V401D 1A Preliminary 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V401D is a 4Mbit electrically Programmable Read-Only Memory organized as 524,288 word x 8bit. The MR27V401D operates on a single +3V-3.3V power supply and is TTL compatible.
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MR27V401D
288-Word
MR27V401D
32-pin
100ns
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4mbit prom
Abstract: MR27V402D
Text: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D
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MR27V402D
144-Word
16-Bit
288-Word
MR27V402D
16bit
40-pin
4mbit prom
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MR27V402D
Abstract: MR27V402DMP MR27V402DRP MR27V402DTP
Text: ¡ Semiconductor 1A MR27V402D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit One Time PROM DESCRIPTION The MR27V402D is a 4Mbit electrically Programmable Read-Only Memory whose configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit. The MR27V402D
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MR27V402D
144-Word
16-Bit
288-Word
MR27V402D
16bit
40-pin
MR27V402DMP
MR27V402DRP
MR27V402DTP
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W39L040
Abstract: No abstract text available
Text: Preliminary W39L040 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W39L040 is a 4Mbit, 3.3-volt only CMOS flash memory organized as 512K × 8 bits. For flexible erase capability, the 4Mbits of data are divided into 8 uniform sectors of 64 Kbytes, which are
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W39L040
W39L040
12-volt
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ES29LV400EB-70TGI
Abstract: ES29LV400EB-70TG ES29LV400E BB 555 ES29LV400EB
Text: EE SS II Excel Semiconductor inc. ES29LV400E 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV400E
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400ET
ES29LV400EB
48-pin
ES29LV400EB-70TGI
ES29LV400EB-70TG
ES29LV400E
BB 555
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Untitled
Abstract: No abstract text available
Text: W29D040C 512K x 8 CMOS FLASH MEMORY GENERAL DESCRIPTION The W29D040C is an 4Mbit, 5-volt only CMOS flash memory organized as 512K x 8 bits. For flexible erase capability, the 4 Mbits of data are divided into 8 uniform sectors of 64 Kbytes. The byte-wide × 8
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W29D040C
12-volt
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ES29LV400D
Abstract: ES29LV400DT-70RTG ES29LV400DB-70RTG
Text: EE SS II Excel Semiconductor inc. ES29LV400D 4Mbit 512Kx 8/256K x 16 CMOS 3.0 Volt-only, Boot Sector Flash Memory GENERAL FEATURES • Minimum 100,000 program/erase cycles per sector • 20 Year data retention at 125oC • Single power supply operation - 2.7V -3.6V for read, program and erase operations
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ES29LV400D
512Kx
8/256K
125oC
16Kbyte
32Kbyte
64Kbyte
ES29LV400DT
ES29LV400DB
48-pin
ES29LV400D
ES29LV400DT-70RTG
ES29LV400DB-70RTG
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4mbit eprom
Abstract: MSM6650 4NC16
Text: J2D0087-38-Z1 作成：1998年12月 前回作成：1997年 3月 ¡ 電子デバイス MSM6650 4MegOTP 変換ボード l MSM6650 4MegOTP I/F BOARD 4MegOTP 変換ボード 1. 外観図 t MSM6650/EPROM EVA ON OFF w XT CPU STD PARA SIRI r CR e 4Mbit EPROM MSM6650
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J2D0087-38-Z1
MSM6650
MSM6650/EPROM
MSM6650
2MSM6650
256kHz
4mbit eprom
4NC16
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MR27V452D
Abstract: SOP40 prom 4mbit eprom MR27V452DMP MR27V452DRP MR27V452DTP
Text: ¡ Semiconductor 1A MR27V452D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V452D is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.
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MR27V452D
144-Word
16-Bit
288-Word
16-Word
MR27V452D
16bit
SOP40 prom
4mbit eprom
MR27V452DMP
MR27V452DRP
MR27V452DTP
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00FF
Abstract: MR27V452D
Text: ¡ Semiconductor 1A MR27V452D 262,144-Word x 16-Bit or 524,288-Word x 8-Bit 8-Word x 16-Bit or 16-Word x 8-Bit Page Mode One Time PROM DESCRIPTION The MR27V452D is a 4Mbit electrically Programmable Read-Only Memory with page mode. Its configuration can be electrically switched between 262,144 word x 16bit and 524,288 word x 8bit.
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MR27V452D
144-Word
16-Bit
288-Word
16-Word
MR27V452D
16bit
00FF
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MSM6650
Abstract: No abstract text available
Text: O K I Semiconductor E2D5087-17-50 MSM6650 4MegOTP l/F BOARD 4MegOTP Conversion Board 1. BOARD APPEARANCE 2. BOARD SETTING D 4Mbit EPROM Socket Insert a 4Mbit EPROM, which is programmed with the voice data through voice analysis. XT/W Z Select jumpers These jumpers are used to select ceramic oscillation or RC oscillation.
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OCR Scan
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E2D5087-17-50
MSM6650
MSM6650.
220kQ
100kQ
096MHz
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32kx8 sram
Abstract: 2kx8 sram comet cmt BS9450 CE5 chip mme eprom
Text: C T S CORP MME D 17ñlS O b 00030^7 S icm Series CqMqT memory hr- ' 33 > H C a B B igELj, J U MHUJ. CoMeT™ memory • Up to 4Mbit capacity in EEPROM, EPROM, Flash EPROM or SRAM • Can be configured as 8 ,1 6 or 32 bit words by the user • Technologies can be mixed on a
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OCR Scan
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MIL-STD-883C
BS9450
32-pin
32Kx8
64Kx8
128Kx8
32kx8 sram
2kx8 sram
comet cmt
BS9450
CE5 chip
mme eprom
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