Flash MCp nand DRAM 107-ball
Abstract: SAMSUNG MCP nand sdram mcp KAG00H008M-FGG2 UtRAM Density
Text: Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Prelimanary MCP MEMORY KAG00H008M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
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KAG00H008M-FGG2
256Mb
32Mx8)
4Mx16x4Banks)
128Mb
107-Ball
80x13
Flash MCp nand DRAM 107-ball
SAMSUNG MCP
nand sdram mcp
KAG00H008M-FGG2
UtRAM Density
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4Mx16x4
Abstract: 6416VESBM8G05TWJ udimm udimm pcb drawing
Text: 16M x 64 Bit PC100 SDRAM µDIMM PC100 SYNCHRONOUS DRAM MicroDIMM 6416VESBM8G05TWJ 144 Pin 16Mx64 SDRAM µDIMM Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The module is a 16Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 4Mx16x4 (TSOP)
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PC100
PC100
6416VESBM8G05TWJ
16Mx64
A10/AP
DS947-
4Mx16x4
udimm
udimm pcb drawing
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PC100
Abstract: SODIMM
Text: 16M x 64 Bit PC-100/133 SDRAM SODIMM PC-100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6416VxSWM8G05TWK 144 Pin 16Mx64 SDRAM SODIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The module is a 16Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 4Mx16x4 (TSOP)
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PC-100/133
PC-100/133
6416VxSWM8G05TWK
16Mx64
4Mx16x4
256x8
A10/AP
PC100
SODIMM
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SAMSUNG MCP
Abstract: KAA00BB07M-DGUV UtRAM Density samsung nor nand ddr mcp nand sdram mcp M/BVS mcp ohm
Text: Preliminary MCP MEMORY KAA00BB07M-DGUV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash / 64M Bit (4Mx16) Burst UtRAM / 256M Bit (4Mx16x4Banks) Mobile SDRAM Revision History Revision No. History 0.0 Draft Date Initial draft - 256Mb NAND C-Die_Ver 2.6
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KAA00BB07M-DGUV
16Mx16)
4Mx16)
4Mx16x4Banks)
256Mb
137-Ball
80x14
SAMSUNG MCP
KAA00BB07M-DGUV
UtRAM Density
samsung nor nand ddr mcp
nand sdram mcp
M/BVS mcp ohm
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SAMSUNG MCP
Abstract: Flash MCp nand DRAM 107-ball K5D5657DCM-F015 SAMSUNG 256Mb mcp Qualification Reliability dq15d samsung mcp 107-ball
Text: Preliminary MCP MEMORY K5D5657DCM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.0 June 2003 Preliminary MCP MEMORY K5D5657DCM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
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K5D5657DCM-F015
256Mb
32Mx8)
4Mx16x4Banks)
107-Ball
SAMSUNG MCP
Flash MCp nand DRAM 107-ball
K5D5657DCM-F015
SAMSUNG 256Mb mcp Qualification Reliability
dq15d
samsung mcp 107-ball
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Samsung MCP
Abstract: MCP NAND K5D5657ACM K5D5657ACM-F015 MCP 256M nand samsung mobile DDR
Text: Advance Preliminary MCP MEMORY K5D5657ACM-F015 MCP Specification of 256Mb NAND and 256Mb Mobile SDRAM -1- Revision 0.1 September 2003 Advance Preliminary MCP MEMORY K5D5657ACM-F015 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash / 256M Bit(4Mx16x4Banks) Mobile SDRAM
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K5D5657ACM-F015
256Mb
32Mx8)
4Mx16x4Banks)
128Mb
107-Ball
80x13
Samsung MCP
MCP NAND
K5D5657ACM
K5D5657ACM-F015
MCP 256M nand samsung mobile DDR
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PC133 133Mhz cl3
Abstract: PC100 DS851-0
Text: 16M x 64 Bit PC-100/133 SDRAM SODIMM PC-100/133 SYNCHRONOUS SMALL OUTLINE DRAM DIMM 6416VxSWM8G05TWE 144 Pin 16Mx64 SDRAM SODIMM Unbuffered, 8k Refresh, 3.3V with SPD General Description Pin Assignment The module is a 16Mx64 bit, 5 chip, 144 Pin SODIMM module consisting of 4 4Mx16x4 (TSOP)
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PC-100/133
PC-100/133
6416VxSWM8G05TWE
16Mx64
4Mx16x4
256x8
A10/AP
PC133 133Mhz cl3
PC100
DS851-0
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pny 264
Abstract: PNY Technologies SDRAM 16M
Text: 16M x 64 Bit SDRAM DIMM PC100/133 SYNCHRONOUS DRAM DIMM 6416VsSEM8G05TWF 168 Pin 16Mx64 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment General Description Pin# The Module is a 16Mx64 bit, 5 chip, 168 Pin DIMM module consisting of 4 4Mx16x4 (TSOP)
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PC100/133
6416VsSEM8G05TWF
16Mx64
4Mx16x4
256x8
PC100/133
DS968-6416V
pny 264
PNY Technologies SDRAM 16M
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SAMSUNG MCP
Abstract: KAG00E007M-FGGV UtRAM Density samsung nor nand ddr mcp samsung mcp 107-ball Flash MCp nand DRAM 107-ball
Text: Advance Preliminary MCP MEMORY KAG00E007M-FGGV MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 September 2003 Advance Preliminary MCP MEMORY KAG00E007M-FGGV Document Title Multi-Chip Package MEMORY 256M Bit 16Mx16 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
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KAG00E007M-FGGV
256Mb
16Mx16)
4Mx16x4Banks)
107-Ball
80x13
SAMSUNG MCP
KAG00E007M-FGGV
UtRAM Density
samsung nor nand ddr mcp
samsung mcp 107-ball
Flash MCp nand DRAM 107-ball
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Flash MCp nand DRAM 107-ball
Abstract: dq15d SAMSUNG MCP 130 MCP NAND DDR 512M nand mcp SAMSUNG MCp nand ddr KAG00J007M-FGG2 UtRAM Density nand mcp samsung ka
Text: Advance Preliminary MCP MEMORY KAG00J007M-FGG2 MCP Specification of 256Mb NAND*2 and 256Mb Mobile SDRAM -1- Revision 0.6 October 2003 Advance Preliminary MCP MEMORY KAG00J007M-FGG2 Document Title Multi-Chip Package MEMORY 256M Bit 32Mx8 Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
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KAG00J007M-FGG2
256Mb
32Mx8)
4Mx16x4Banks)
107-Ball
80x13
Flash MCp nand DRAM 107-ball
dq15d
SAMSUNG MCP
130 MCP NAND DDR
512M nand mcp
SAMSUNG MCp nand ddr
KAG00J007M-FGG2
UtRAM Density
nand mcp samsung ka
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6416VESEM8G05TPF
Abstract: PC-100 9 tac PNY Technologies SDRAM 16M
Text: 16M x 64 Bit PC-100 SDRAM DIMM PC-100 SYNCHRONOUS DRAM DIMM 6416VESEM8G05TPF 168 Pin 16Mx64 SDRAM DIMM Unbuffered, 8k Refresh, 3.3V with SPD Pin Assignment Pin# General Description The Module is a 16Mx64 bit, 5 chip, 168 Pin DIMM module consisting of 4 4Mx16x4 (TSOP)
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PC-100
PC-100
6416VESEM8G05TPF
16Mx64
VsPC-100
DS968
9 tac
PNY Technologies SDRAM 16M
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ARM926T
Abstract: ic str 6454 s11 stopping compound motorola 7824 BT OSC26M CNC DRIVES ptc temperature sensor 400c 4*4 matrix keypad 17521 rca SAMSUNG NAND FLASH K9F5608
Text: i.MX21 Applications Processor Reference Manual Document Number: MC9328MX21RM Rev. 3 04/2007 How to Reach Us: Home Page: www.freescale.com E-mail: [email protected] USA/Europe or Locations Not Listed: Freescale Semiconductor Technical Information Center, CH370
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MC9328MX21RM
CH370
ARM926T
ic str 6454
s11 stopping compound
motorola 7824 BT
OSC26M
CNC DRIVES
ptc temperature sensor 400c
4*4 matrix keypad
17521 rca
SAMSUNG NAND FLASH K9F5608
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IS42S16160D
Abstract: IS42S16160D-7TLI
Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 JUNE 2009 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed
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IS42S83200D,
IS42S16160D
IS45S83200D,
IS45S16160D
32Meg
16Meg
256-MBIT
256Mb
IS42S83200D
IS42S16160D
IS42S16160D-7TLI
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s5000vsa system status led blinking amber
Abstract: marking dh10 S5000VSA ATX POWER SUPPLY 600W circuit diagram 82563EB ATI ES1000 resolution mini pcie connector 52 pin vertical "Intel Server Board S5000VSA" system status led 600W atx motherboard canada ices 003 class b DDR
Text: Intel Server Board S5000VSA Technical Product Specification Intel order number – D36978-004 Revision 1.3 Dec. 2006 Enterprise Platforms and Services Division - Marketing 2 Revision History Intel® Server Board S5000VSA TPS Revision History Date April 2006
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S5000VSA
D36978-004
S5000VSA
16-bit
s5000vsa system status led blinking amber
marking dh10
ATX POWER SUPPLY 600W circuit diagram
82563EB
ATI ES1000 resolution
mini pcie connector 52 pin vertical
"Intel Server Board S5000VSA" system status led
600W atx
motherboard canada ices 003 class b DDR
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Untitled
Abstract: No abstract text available
Text: IS43/46DR83200A IS43/46DR16160A 32Mx8, 16Mx16 DDR2 DRAM FEATURES • Vdd = 1.8V ±0.1V, Vddq = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle • Differential data strobe (DQS, DQS)
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IS43/46DR83200A
IS43/46DR16160A
32Mx8,
16Mx16
18-compatible)
256Mb
-40oC
105oC,
105oC
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K934
Abstract: LZ9GG31 8c542 VXD1 switch K2961 ZENER3 UCB1300 lcd inverter board schematic MAX1692EUB VXD1
Text: Intel StrongARM* SA-1110 Development Board Schematics May 2000 Phase 5 Order No: 278279-006 Information in this document is provided in connection with Intel® products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Intel's Terms and Conditions of Sale for such products, Intel assumes no
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SA-1110
21-ADV71-71
K-DD-54-25A99-01
54-25A99-01
K934
LZ9GG31
8c542
VXD1 switch
K2961
ZENER3
UCB1300
lcd inverter board schematic
MAX1692EUB
VXD1
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AN2284
Abstract: ARM920T MA10 MA11 MC9328MX1 MT28S4M16LC
Text: Application Note AN2284/D Rev. 0, 05/2002 Interfacing the MC9328MX1 with Micron SyncFlash By Michael Kjar 1 Introduction This document provides a detailed overview on how to interface and use Motorola’s DragonBall MC9328MX1 processor with Micron SyncFlash® by describing the
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AN2284/D
MC9328MX1
MT28S4M16LC
32-bit
ARM920T
AN2284
MA10
MA11
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IS42S16160G-5BL
Abstract: IS42S83200G IS42S16160G5BL
Text: IS42S83200G, IS42S16160G IS45S83200G, IS45S16160G 32Meg x 8, 16Meg x16 JANUARY 2013 256Mb SYNCHRONOUS DRAM FEATURES • Clock frequency: 200,166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge
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IS42S83200G,
IS42S16160G
IS45S83200G,
IS45S16160G
32Meg
16Meg
256Mb
54-Pin
Alloy42
IS42S16160G-5BL
IS42S83200G
IS42S16160G5BL
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413 5331
Abstract: FLX68000 640X480 TFT DISPLAY PENAL CONNECTION motorola battery tablet MC68EZ328 gbf20 MC68SZ328VH66V re-enumeration
Text: MC68SZ328 Integrated Processor Reference Manual MC68SZ328RM/D Rev. 1.3, 3/2004 HOW TO REACH US: Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to
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MC68SZ328
MC68SZ328RM/D
Index-28
413 5331
FLX68000
640X480 TFT DISPLAY PENAL CONNECTION
motorola battery tablet
MC68EZ328
gbf20
MC68SZ328VH66V
re-enumeration
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Untitled
Abstract: No abstract text available
Text: IS42S83200B IS42S16160B ISSI 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM PRELIMINARY INFORMATION SEPTEMBER 2005 • Clock frequency: 166, 143 MHz OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed • Fully synchronous; all signals referenced to a
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IS42S83200B
IS42S16160B
32Meg
16Meg
256-MBIT
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IS42S16160D-7T
Abstract: No abstract text available
Text: IS42S83200D, IS42S16160D IS45S83200D, IS45S16160D 32Meg x 8, 16Meg x16 PRELIMINARY INFORMATION JULY 2008 256-MBIT SYNCHRONOUS DRAM FEATURES • Clock frequency: 166, 143 MHz • Fully synchronous; all signals referenced to a positive clock edge OVERVIEW ISSI's 256Mb Synchronous DRAM achieves high-speed
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IS42S83200D,
IS42S16160D
IS45S83200D,
IS45S16160D
32Meg
16Meg
256-MBIT
IS42S16160D-7T
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controller for sdram
Abstract: ARM920T MA10 MA11 MC9328MX1 MT28S4M16LC 0x0F00000
Text: Freescale Semiconductor, Inc. Application Note AN2284/D Rev. 1.0, 09/2003 Interfacing the MC9328MX1 with Micron SyncFlash Freescale Semiconductor, Inc. By Michael Kjar Contents Introduction. . . . . . . . . . . . . 1 Hardware Interface . . . . . . . 3 Erasing and Programming
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AN2284/D
MC9328MX1
controller for sdram
ARM920T
MA10
MA11
MT28S4M16LC
0x0F00000
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Untitled
Abstract: No abstract text available
Text: IS43/46DR16160B 16Mx16 DDR2 DRAM PRELIMINARY INFORMATION NOVEMBER 2012 FEATURES DESCRIPTION • VDD = 1.8V ±0.1V, VDDQ = 1.8V ±0.1V • JEDEC standard 1.8V I/O SSTL_18-compatible • Double data rate interface: two data transfers per clock cycle
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IS43/46DR16160B
16Mx16
18-compatible)
sS46DR16160B-37CBLA1
DDR2-533C
IS46DR16160B-37CBA1
-40oC
105oC,
105oC
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Untitled
Abstract: No abstract text available
Text: IS42R83200D, IS42R16160D IS45R83200D, IS45R16160D 32Meg x 8, 16Meg x16 256-MBIT SYNCHRONOUS DRAM FEATURES • Clockfrequency:133,100MHz • Fullysynchronous;allsignalsreferencedtoa positive clock edge MARCH 2010 OVERVIEW
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IS42R83200D,
IS42R16160D
IS45R83200D,
IS45R16160D
32Meg
16Meg
256-MBIT
256Mbà
IS42/45R83200Dà
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