4N100 Search Results

4N100 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
R5F72434N100FP#U0		Renesas Electronics Corporation	32-bit Microcontrollers

4N100 Price and Stock

Filter by Manufacturer


TDK Electronics B65814N1008D001 BOBBIN COIL FORMER RM 10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B65814N1008D001	Box	2,902		1	1 $1.7 10 $1.468 100 $1.0568 1000 $0.8155 10000 $0.8155	Buy Now
Newark	B65814N1008D001	Bulk	212		1	1 $1.68 10 $1.46 100 $0.987 1000 $0.867 10000 $0.867	Buy Now
TME	B65814N1008D001				800	1 - 10 - 100 - 1000 $0.95 10000 $0.95	Get Quote
Littelfuse Inc IXFK24N100Q3 MOSFET N-CH 1000V 24A TO264AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFK24N100Q3	Tube	1,810		1	1 $25.63 10 $25.63 100 $17.8668 1000 $17.8668 10000 $17.8668	Buy Now
RS	IXFK24N100Q3	Bulk		8 Weeks	25	1 - 10 - 100 $27.63 1000 $27.63 10000 $27.63	Get Quote
TDK Electronics B65814N1008D002 BOBBIN COIL FORMER RM 10
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	B65814N1008D002	Box	1,222		1	1 $2.02 10 $1.389 100 $1.0484 1000 $0.8155 10000 $0.8155	Buy Now
Newark	B65814N1008D002	Bulk	4		1	1 $1.56 10 $1.37 100 $1.07 1000 $1.03 10000 $1.03	Buy Now
Littelfuse Inc IXFA4N100Q MOSFET N-CH 1000V 4A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXFA4N100Q	Tube	900		1	1 $8.65 10 $8.65 100 $8.65 1000 $4.59712 10000 $4.59712	Buy Now
Littelfuse Inc IXTA1R4N100P MOSFET N-CH 1000V 1.4A TO263
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IXTA1R4N100P	Tube	412		1	1 $3.59 10 $3.59 100 $3.59 1000 $1.48888 10000 $1.48888	Buy Now

Find more 4N100 price and stock on Findchips.com

4N100 Datasheets (19)

Part	Manufacturer	Description	Datasheet Type	PDF
4N100	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF
4N100WR-10	Inmet	ATTENUATOR	Scan	PDF
4N100WR-10F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-10M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-20	Inmet	ATTENUATOR	Scan	PDF
4N100WR-20F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-20M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-3	Inmet	ATTENUATOR	Scan	PDF
4N100WR-30	Inmet	ATTENUATOR	Scan	PDF
4N100WR-30F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-30M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-3F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-3M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-40	Inmet	ATTENUATOR	Scan	PDF

4N100WR-40F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-40M	Inmet	ATTENUATOR	Scan	PDF
4N100WR-6	Inmet	ATTENUATOR	Scan	PDF
4N100WR-6F	Inmet	ATTENUATOR	Scan	PDF
4N100WR-6M	Inmet	ATTENUATOR	Scan	PDF

4N100 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
125OC Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR	Original	PDF	4N100Q O-220 Figure10. 125OC 125OC
4n100 Abstract: IXFH4N100Q 4N100Q IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside VDSS = 1000 V ID25 = 3.5 A RDS(on) = 3.0 Ω trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Symbol Test Conditions Maximum Ratings	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 4n100 4N100Q IXFR4N100Q
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	4N100Q O-247 Figure10. 125OC
4N100Q Abstract: 125OC Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	4N100Q O-247 125OC 728B1 123B1 728B1 065B1 125OC
IXFH4N100Q Abstract: IXFR4N100Q Text: HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ VGS VGSM	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100Q 728B1 123B1 728B1 065B1 IXFR4N100Q
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V ID25 = 4 A RDS on = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-220) O-220 O-263 4N100Q 4N100Q O-220 Figure10. 125OC
125OC Abstract: 4N100Q Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V = 4A ID25 RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	4N100Q O-220 125OC 728B1 123B1 728B1 065B1 125OC 4N100Q
Untitled Abstract: No abstract text available Text: IXFA 4N100Q IXFP 4N100Q HiPerFETTM Power MOSFETs Q-Class VDSS =1000 V ID25 = 4A RDS on = 3.0 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-220) O-220 O-263 4N100Q 4N100Q O-220 O-26oltage Figure10.
IXFR4N100Q Abstract: IXFH4N100 ll1000 Text: Advance Technical Information HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 4N100Q Electrically Isolated Backside trr ≤ 200ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	PDF	ISOPLUS247TM 4N100Q 200ns IXFH4N100 IXFR4N100Q ll1000
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 4N100Q Figure10. 125OC
Untitled Abstract: No abstract text available Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 2.8 Ω trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	O-247 O-268 4N100Q O-268 Figure10. 125OC
Untitled Abstract: No abstract text available Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Maximum Ratings Test Conditions VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	4N100 O-220AB O-263
4N100 Abstract: No abstract text available Text: Advanced Technical Information IGBT IXGA 4N100 IXGP 4N100 Symbol Test Conditions Maximum Ratings VCES = 1000 V IC25 = 8A VCE sat = 2.7 V VCES TJ = 25°C to 150°C 1000 V VCGR TJ = 25°C to 150°C; RGE = 1 MW 1000 V VGES Continuous ±20 V VGEM Transient ±30	Original	PDF	4N100 O-220AB O-263 4N100
4N100Q Abstract: 125OC Text: HiPerFETTM Power MOSFETs Q-Class IXFH 4N100Q VDSS IXFT 4N100Q ID25 RDS on = 1000 V = 4A = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C	Original	PDF	4N100Q O-247 Figure10. 125OC 125OC

Untitled Abstract: No abstract text available Text: IPB180N10S4-02 OptiMOSTM-T2 Power-Transistor Product Summary VDS 100 V RDS on 2.5 mΩ ID 180 A Features • N-channel - Enhancement mode PG-TO263-7-3 • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant)	Original	PDF	IPB180N10S4-02 PG-TO263-7-3 4N1002
C1162 Abstract: C1280 26n60 60N25 C1328 80N06 120N20 C1146 C1104 C1158 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1162 C1280 26n60 60N25 C1328 120N20 C1146 C1104 C1158
7N60B equivalent Abstract: 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2 Text: Contents Page General Contents QA and Environmental Management Systems Alphanumeric Index Symbols and Terms Nomenclature Patents and Intellectual Property I II III XVIII XX XXII CLARE Optically Isolated Solid State Relays Optically Isolated AC-Power Switches	Original	PDF	MS-013 10-Pin 5M-1994 MO-229 7N60B equivalent 18N50 equivalent ixgh 1499 MOSFET smd 4407 IXDD 614 C 547 B W57 BJT transistor r1275ns20l R1271ns12C IXYS CS 20-22 MOF1 IXTP 220N04T2
C1146 Abstract: C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60 Text: HiPerFETTM F-Series Contents VDSS max V 60 70 ID cont TC = 25 °C A 76 RDS(on) TC = 25 °C W 0.011 0.012 80 0.009 110 0.006 180 0.006 200 0.006 76 0.011 0.012 105 110 0.007 0.006 180 0.007 0.006 0.006 TO-247 (IXFH) PLUS247 (IXFX) TO-268 (IXFT) TO-264 (IXFK)	Original	PDF	O-247 PLUS247 ISOPLUS247TM O-204 O-268 O-264 76N06-11 76N06-12 80N06 180N06 C1146 C1162 C1278 C1106 C1156 ixfh 60N60 C1142 c1238 C1104 ixfn 26n60
Untitled Abstract: No abstract text available Text: □IXYS Advanced Technical Information HiPerFET Power MOSFETs Q-Class IXFH 4N100Q IXFT 4N100Q V DSS ^D25 D D S o n = 1000 V 4A = 2.8 Q trr < 250 ns N-Channel Enhancement Mode Avalanche Rated, LowQ , Highdv/dt Symbol TestConditions Maximum Ratings V DSS	OCR Scan	PDF	4N100Q -247A
rockwell collins connector Abstract: 8040 instruction sheet HF-8040 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10 Text: 523-076745B-00221A Rockwell International Collins instruction book HF-8040 Antenna Coupler This instruction book includes: 523-0767459 Description HF-804QM Supplement 523-0771398 523-0767460 Installation 523-0767461 Operation 523-0767462 Theory 523-0767463	OCR Scan	PDF	523-076745B-00221A HF-8040( HF-804QM HF-8040 F-1040 F-8040 HF-B040 4N1001 rockwell collins connector 8040 instruction sheet 523-076745B-00221A HF-9040 a13499 10MILLISECOND ROCKWELL COLLINS ARC-186 N6P2 RAP10
1N100WR-6 Abstract: 4N100WR-30M Text: ATTENUATORS up to 4 GHz TYPE N 100 Watts MODELS: XN 1 OOWR — > X N 1 0 0 W R -X X F , XN 1 OOWR — X X Ivi REDUCED SIZE SPECIFICATIONS: Electrical: Frequency Range Standard Freq. Values Standard dB Values* Attenuation Accuracy 3 & 6 d B _ 10 & 20 d B _	OCR Scan	PDF	00WR-> 00WR-XX MIL-STD-348 XN100WR-XXY 1N100WR-6 4N100WR-30M XN100WR-ATT;
4N95 Abstract: 4n100 mosfet IXTM4N100 IXTM4N95 IXTP4N100 IXTP4N95 TSLA 4N95A Text: I X Y S CÔRP 1ÖE D • MböbSSb OQOGbOH Ö IXTP4N95, 4N100, IXTM4N95, 4N100 □ I X Y S 4 AMPS, 950-1000 V, 3.3Q/4.0Q ' T - 3 . ci - l 3 MAXIMUM RATINGS Parameter Sym. IXTP4N95 IXTM4N95 4N100 4N100 Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1)	OCR Scan	PDF	IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 O-220 00A//JS 4N95 4n100 mosfet IXTM4N95 TSLA 4N95A
equivalent data book of 10N60 mosfet Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40 Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:	OCR Scan	PDF	1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
4N95 Abstract: 4n100 mosfet IXTP4N100 ixtm4N100 ixtm4n95 Text: I X Y S CÔRP □ I X Y läE D • 4bôba2b OQOGbOH Ö IXTP4N95, 4N100, IXTM4N95, 4N100 S 4 AMPS, 950-1000 V, 3.3Q/4.0Q MAXIMUM RATINGS Sym. Parameter Drain-Source Voltage 1 Drain-Gate Voltage (RQS=1.0 MQ) (1) Gate-Source Voltage Continuous Gate-Source Voltage Transient	OCR Scan	PDF	IXTP4N95, IXTP4N100, IXTM4N95, IXTM4N100 IXTP4N95 IXTM4N95 IXTP4N100 EL420 O-204 4N95 4n100 mosfet ixtm4n95

Privacy Settings

4N100 Search Results

4N100 Result Highlights (1)

4N100 Price and Stock

TDK Electronics B65814N1008D001

Littelfuse Inc IXFK24N100Q3

TDK Electronics B65814N1008D002

Littelfuse Inc IXFA4N100Q

Littelfuse Inc IXTA1R4N100P

4N100 Datasheets (19)

4N100 Datasheets Context Search

125OC

4n100

Untitled

4N100Q

IXFH4N100Q

Untitled

125OC

Untitled

IXFR4N100Q

Untitled

Untitled

Untitled

4N100

4N100Q

Untitled

C1162

7N60B equivalent

C1146

Untitled

rockwell collins connector

1N100WR-6

4N95

equivalent data book of 10N60 mosfet

4N95