BLF1822-30
Abstract: BGY916 CDMA-120 BGF1801-10 BGF802-20 BGF944 BLF2022-40 blf2043 BGF1901-10 BGF844
Text: CELLULAR BASESTATIONS RF POWER TRANSISTORS & MODULES For All Cellular Standards RF POWER MODULES Mode of Operation PL W CW CDMA CW EDGE 20 3 avg 20 4 avg SOT365C CW EDGE BGY916 BGY915/5 BGY925 BGY925/5 SOT365A SOT365A SOT365A SOT365A BGF1801-10 SOT365C BGF1901-10
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OT365C
BGY916
BGY915/5
BGY925
BGY925/5
OT365A
BGF1801-10
BLF1822-30
BGY916
CDMA-120
BGF1801-10
BGF802-20
BGF944
BLF2022-40
blf2043
BGF1901-10
BGF844
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Untitled
Abstract: No abstract text available
Text: QQ-45 Digitally Controlled Analog Phase Shifters Features • 8 bit Digital logic standard • Octave bands up to 18 GHz • RF power operation 5 mW peak/CW, RF power survival 100mW peak/CW • Custom configurations available Specifications: Parameter Specification
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QQ-45
100mW
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: QQ-45 Digitally Controlled Analog Phase Shifters Features • 8 bit Digital logic standard • Octave bands up to 18 GHz • RF power operation 5 mW peak/CW, RF power survival 100 mW peak/CW • Custom configurations available Specifications: Parameter Specification
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QQ-45
MIL-STD-883,
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Untitled
Abstract: No abstract text available
Text: QQ-45 Digitally Controlled Analog Phase Shifters Features • 8 bit Digital logic standard • Octave bands up to 18 GHz • RF power operation 5 mW peak/CW, RF power survival 100mW peak/CW • Custom configurations available Speciications: Parameter Speciication
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QQ-45
100mW
MIL-STD-883,
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VTX-6389A2
Abstract: Instrumentation temp 8823 8823 WRD650-D28 WRD650D28
Text: CPI | VTX-6389A2 4CW50,000J VTX-6389A2 1.2 kW, CW Traveling-Wave Amplifier, 8.0 GHz to 12.75 GHz, Periodic-Permanent-Magnet Focused, Coaxial Input, Waveguide Output, Forced-Air Cooled. FEATURES • 8.00 GHz - 12.75 GHz • 1.2 kW CW Output Power • 22” x 5” x 5”
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VTX-6389A2
4CW50
WRD650-D28
VTX-6389A2
Instrumentation
temp 8823
8823
WRD650D28
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40L40CW
Abstract: 40L45CW IRFP460 TIO 872-M
Text: Bulletin PD-20566 rev. B 07/02 40L40CW 40L45CW SCHOTTKY RECTIFIER 2 x 20 Amps Description/ Features Major Ratings and Characteristics Characteristics 40L.CW Units IF AV Rectangular waveform 40 A 40 - 45 V IFSM @ tp = 5 µs sine 1240 A VF 0.42 V VRRM The 40L.CW center tap Schottky rectifier has been optimized
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PD-20566
40L40CW
40L45CW
O-247
O-247AC
40L40CW
40L45CW
IRFP460
TIO 872-M
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RFPA0133
Abstract: EFB810-3/4-3/RFPA0133
Text: RFPA0133 3 TO 5 V PROGRAMMABLE GAIN HIGH EFFICIENCY POWER AMPLIFIER Package Style: QFN, 16-Pin, 3 mm x 3 mm Features 0.5 W CW Output Power at 3.6 V 1 W CW Output Power at 5 V 32 dB Small Signal Gain at 900 MHz >60% Efficiency @ PSAT
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RFPA0133
16-Pin,
RFPA0133
DS100803
EFB810-3/4-3/RFPA0133
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2 Wavelength Laser Diode sanyo
Abstract: 783nm dvd rw diode 10 pin DL-1195-211 dvd rw laser
Text: TWO-WAVELENGTH LASER DIODE DL-1195-211 Ver.1 Apr. 2007 Package Features Tolerance : ±0.2 （Unit : mm） 3 .5 * Wavelength : 658nm / 783nm Typ. 1 .7 X Applications mW CD-R Po(CW) 80 mW (Infrared) Po(Pulse) 2301) mW VR 2 V CW Topr -10～+75 ℃ Pulse1)
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DL-1195-211
658nm
783nm
110mm
230mW
2 Wavelength Laser Diode sanyo
783nm
dvd rw diode 10 pin
DL-1195-211
dvd rw laser
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GRS-4021
Abstract: 125VAC 141S3 G107-0513 G-168S-3011 GRS-2013A-2600 GPI-154-3013 5 cws G-105-0513 GRS-4012-1600
Text: CW Industries Rocker and Slide Switches Rocker Switches and Power Slide Switches 5 CWÕs rocker and power slide switches utilize a unique patented sliding and rotating action that ensures contact cleanliness and extended life. The attractive style, quick-connect terminals and multiple agency listings make them the perfect choice
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GRS-2011-2600
GRS-2011-20831
GI-152-3010
GPI-152-3013
GPI-154-3013
GS-113-0512
GS-115-0511
G-105-0513
G-107-0513
GRS-4021
125VAC
141S3
G107-0513
G-168S-3011
GRS-2013A-2600
5 cws
GRS-4012-1600
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Untitled
Abstract: No abstract text available
Text: P/N 45-5-100-35-A3 AMPLIFIER MODULE Small Size High Efficiency Low Even Order Harmonics Rugged 5 - 45 MHz 100 Watts Gain: 35 dB Voltage: 24 VDC PERFORMANCE PARAMETER SPECIFICATIONS COMMENTS RF Output Power 100 Watts cw minimum Frequency Range 5 - 45 MHz Gain
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45-5-100-35-A3
45-5-100-35-A3
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Untitled
Abstract: No abstract text available
Text: MAGX-000040-00500P GaN Wideband 5 W CW / Pulsed Transistor in Plastic Package DC - 4.0 GHz Rev. V2 Features • GaN on SiC D-Mode Transistor Technology Common-Source Configuration Unmatched, Coupled DC and RF Ideal for Pulsed and CW Applications up to 50 V
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MAGX-000040-00500P
OT-89
MAGX-000040-00500P
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FS 400 R 12 KF4 61,5 61,5 M6 13 190 31,5 CX W V U 2,8x0,5 171 57 CU CY CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy Cz Gx Gy
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FS300R16KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 61,5 M6 13 190 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy
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FS300R16KF4
FS300R16KF4
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D5958
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 61,5 M6 13 190 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy
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FS300R16KF4
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 61,5 M6 13 190 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy
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FS300R16KF4
Abstract: D-59581
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FS 300 R 16 KF4 61,5 61,5 M6 13 190 171 57 2,8x0,5 U V CX CU CY W CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy
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FS400R
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FS 400 R 12 KF4 61,5 61,5 M6 13 190 31,5 CX W V U 2,8x0,5 171 57 CU CY CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy Cz Gx Gy
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Untitled
Abstract: No abstract text available
Text: European PowerSemiconductor and Electronics Company Marketing Information FS 400 R 12 KF4 61,5 61,5 M6 13 190 31,5 CX W V U 2,8x0,5 171 57 CU CY CV CZ CW 4 deep 3,35 5,5 26,4 7 5 3x5=15 GX EX EU GU GY EY EV GV + + Cu Cv Cw Gu Gv Gw Eu Ev Ew Cx Cy Cz Gx Gy
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AL2O3
Abstract: CT1206CB5C
Text: CT1206CB5C Al2O3 Chip Termination 10 Watts CW Power: 50 Ω ± 5% Resistance: 1.20:1 VSWR: Frequency Range: DC to 12 GHz RoHS Compliant Substrate: Al2O3 ? Typical Performance Return Loss -5 -10 -15 dB -20 -25 -30 -35 -40 -45 -50 0.0 2.0 4.0 6.0 8.0 10.0 12.0
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CT1206CB5C
AL2O3
CT1206CB5C
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CW-2B-13
Abstract: No abstract text available
Text: M ODEL CW Wirewound Resistors Coated FEATURES STANDARD ELECTRICAL SPECIFICATIONS MODEL CW-2 CW-2B* CW-2B-13 CW-2B-15 CW-2C CW-2C-14 CW-5* CW-5-2 CW-5-3 CW-7 CW-10 CW-10-3 MAXIMUM * POWER RATING RESISTANCE MAX. RANGE Max. Hot Spot WT. WORKING VOLTAGE (Ohms)
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CW-2B-13
CW-2B-15
CW-2C-14
CW-10
CW-10-3
1-15k
1-167k
CW-2B-13
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336E-01
Abstract: No abstract text available
Text: Order this data sheet by MRF10005H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10005H* Microwave Power Transistor 5 Watt NPN 960-1215 MHz Designed for CW and long pulsed common base amplifiers. C P liO Guaranteed Performance at 1215 MHz - Output Power = 5 Watts CW
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MRF10005H*
MRF10005HX
MRF10005HXV
MRF10005HS
MRF10005HC
336E-02
MRF10005H/D
PHX31248-1
MRF10005H/D
336E-01
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SDL-7501-G1
Abstract: SDL-7311-G1 SDL7501G1 SDL7311G1 SDL7201J1 SDL-7300 SDL Laser diode sdl 7501 7201 diode SDL-7500
Text: PRELIMINARY PRODUCT LOW COST VISIBLE WAVELENGTH LASER DIODES Key Features The high power, visible wavelength and low cost SDL-7200, SDL-7300 and SDL- 5 mW cw, 635 nm Low Cost 7500 Series laser diodes are ideal for point 5 mW cw, 665 nm Low Cost ing, alignment, bar code scanning, optical
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DDDD37T
SDL-7200,
SDL-7300
SDL-7500
000D3fl2
SDL-7501-G1
SDL-7311-G1
SDL7501G1
SDL7311G1
SDL7201J1
SDL Laser diode
sdl 7501
7201 diode
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Untitled
Abstract: No abstract text available
Text: What H EW LETT mUtíM PACKARD T is/i 5 mm Precision Optical Performance White LEDs Technical Data IIP S u n P o w e r S e r ies HLM P-CW 15 HLM P-CW 16 HLM P-CW 30 HLM P-CW 31 F e a tu r e s D e sc r ip tio n • H ighly L um inous W h ite E m issio n • E m issio n Color: 0 .3 1 , 0.32
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T-13/4
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pj 3059
Abstract: UG-704 UG-709 UG-573 HN-P-8U UG-556 UG-706 PJ-55 PJ59 1E54
Text: IMilitary Cross Reference M IL IT A R Y J IS N U M B ER N U M B ER CW- i 23/U | 8N C -C for fem ale C W - I2 3 A /U | 8N C -C (for fem ale) L DD K ¡ P a rt no ! j PAG E 2001 CW- 155/U BNC-C(for fem ale) - C W - I5 5 A /U BNC-C(for fem aie) 2565 CW- 1S9/U
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155/U
CW-282/U
M-358
-359A/U
M-23329/3-01-03
M-23329/3-05
M-23329/3-06
M-23329/3-07
M-23329/3-08
23329/3-I
pj 3059
UG-704
UG-709
UG-573
HN-P-8U
UG-556
UG-706
PJ-55
PJ59
1E54
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