transistor amplifier 3 ghz 10 watts
Abstract: 10 watt power transistor
Text: 1720 - 5A 5 Watt - 28 Volts, Class C Microwave 1700 - 2000 MHz CASE OUTLINE 55LV, STYLE 1 GENERAL DESCRIPTION The 1720-5A is a COMMON BASE transistor capable of providing 5 Watts of Class C, RF output power over the band 1700-2000 MHz. This transistor is designed for Microwave Broadband Class C amplifier applications. It includes
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720-5A
transistor amplifier 3 ghz 10 watts
10 watt power transistor
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Untitled
Abstract: No abstract text available
Text: Model SM6471-37S 6400 – 7125 MHz 5 Watt Linear Power Amplifier BROADCAST APPLICATIONS Stealth Microwave’s SM6471-37S is an affordable solid state GaAs amplifier designed for telecommunications and digital video broadcasting. With 800 MHz of instantaneous bandwidth, the amplifier
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SM6471-37S
SM6471-37S
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SM4450-37HS
Abstract: No abstract text available
Text: Model SM4450-37HS 4400 - 5000 MHz 5 Watt Linear Power Amplifier WIRELESS APPLICATIONS Stealth Microwave’s SM4450-37HS is an affordable solid state GaAs amplifier designed for the wireless market. With 600 MHz of instantaneous bandwidth, the amplifier can be used in unlicensed ISM
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SM4450-37HS
SM4450-37HS
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SM4450-37
Abstract: SM4450-37S
Text: Model SM4450-37S 4400 - 5000 MHz 5 Watt Linear Power Amplifier WIRELESS APPLICATIONS Stealth Microwave’s SM4450-37S is an affordable solid state GaAs amplifier designed for the wireless market. With 600 MHz of instantaneous bandwidth, the amplifier can be used in unlicensed ISM
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SM4450-37S
SM4450-37S
SM4450-37
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5.7 GHz power amplifier
Abstract: No abstract text available
Text: Model SM5759-37HS 5700-5900 MHz 5 Watt Linear Power Amplifier FOR ISM, WCS, & WLL APPLICATIONS Stealth Microwave’s SM5759-37HS is an affordable solid state GaAs amplifier designed for the 5.8 GHz wireless market. With 200 MHz of instantaneous bandwidth, the amplifier can be used in
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SM5759-37HS
SM5759-37HS
12VDC
5.7 GHz power amplifier
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RF connector
Abstract: RF POWER amplifier 10 watt SM5659-37HS
Text: Model SM5659-37S 5600 - 5900 MHz 5 Watt Linear Power Amplifier ISM APPLICATIONS Stealth Microwave’s SM5659-37HS is an affordable solid state GaAs amplifier designed for products in the ISM band. The amplifier operates from 5.6 – 5.9 GHz, provides 20 dB of linear gain, has a P1dB of
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SM5659-37S
SM5659-37HS
54Mbps
33dBm
RF connector
RF POWER amplifier 10 watt
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Power-Amplifier
Abstract: 5.7 GHz power amplifier 8587 SM5759-37hs
Text: Model SM5759-37HS 5700 - 5900 MHz 5 Watt Linear Power Amplifier ISM APPLICATIONS Stealth Microwave’s SM5759-37HS is an affordable solid state GaAs amplifier designed for products in the ISM band. The amplifier operates from 5.7 – 5.9 GHz, provides 39 dB of linear gain, has a P1dB of
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SM5759-37HS
SM5759-37HS
54Mbps
32dBm
Power-Amplifier
5.7 GHz power amplifier
8587
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Rogers 4350
Abstract: HMC454ST89
Text: HMC454ST89 v02.0404 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
Rogers 4350
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Untitled
Abstract: No abstract text available
Text: HMC454ST89 v00.0903 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
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Rogers 4350
Abstract: HMC454ST89
Text: HMC454ST89 v01.1103 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
Rogers 4350
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Untitled
Abstract: No abstract text available
Text: HMC454ST89 v02.0404 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
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Untitled
Abstract: No abstract text available
Text: HMC454ST89 v01.1103 MICROWAVE CORPORATION InGaP HBT ½ WATT HIGH IP3 AMPLIFIER, 0.4 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features The HMC454ST89 is ideal for applications requiring a high dynamic range amplifier: Output IP3: +40 to +42 dBm • GSM, GPRS & EDGE
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HMC454ST89
HMC454ST89
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HMC452QS16G
Abstract: No abstract text available
Text: HMC452QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC452QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +48 dBm • GSM, GPRS & EDGE
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HMC452QS16G
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CDMA2000
QSOP16G
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Untitled
Abstract: No abstract text available
Text: HMC453QS16G v00.0504 MICROWAVE CORPORATION AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Features Typical Applications The HMC453QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +50 dBm • GSM, GPRS & EDGE
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QSOP16G
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Untitled
Abstract: No abstract text available
Text: HMC452QS16G v00.0504 MICROWAVE CORPORATION InGaP HBT 1 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz AMPLIFIERS - SMT 8 Features Typical Applications The HMC452QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +48 dBm • GSM, GPRS & EDGE
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HMC452QS16G
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QSOP16G
HMC452QS16G
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HMC453QS16G
Abstract: No abstract text available
Text: HMC453QS16G v00.0504 MICROWAVE CORPORATION AMPLIFIERS - SMT 8 InGaP HBT 1.6 WATT POWER AMPLIFIER, 0.45 - 2.2 GHz Features Typical Applications The HMC453QS16G is ideal for applications requiring a high dynamic range amplifier: Output IP3: +50 dBm • GSM, GPRS & EDGE
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QSOP16G
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Untitled
Abstract: No abstract text available
Text: HMC921LP4E v02.0312 Amplifiers - lineAr & power - smT GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz Typical Applications Features The HmC921lp4e is ideal for: High output ip3: +48 dBm • Cellular/3G & WiMAX/LTE/4G High output p1dB: +33 dBm • Fixed Wireless & WLAN
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HMC921LP4E
HMC921LP4E
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131907
Abstract: No abstract text available
Text: HMC921LP4E v01.0910 9 GaAs HBT MMIC 2 WATT POWER AMPLIFIER, 0.4 - 2.7 GHz Typical Applications Features The HMC921LP4E is ideal for: High Output IP3: +48 dBm • Cellular/3G & WiMAX/LTE/4G High Output P1dB: +33 dBm • Fixed Wireless & WLAN High Gain: 16 dB @ 900 MHz
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HMC921LP4E
HMC921LP4E
131907
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HMC455LP3
Abstract: No abstract text available
Text: HMC455LP3 v01.0604 MICROWAVE CORPORATION InGaP HBT ½ Watt High IP3 AMPLIFIER, 1.7 - 2.5 GHz AMPLIFIERS - SMT 8 Typical Applications Features This amplifier is ideal for high linearity applications: Output IP3: +42 dBm • Multi-Carrier Systems Gain: 13 dB
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HMC455LP3
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2 Watt rf Amplifier
Abstract: HMC139 5 watt microwave amplifier 10 watt 16 ohm power amplifier "15 GHz" power amplifier 10 watt D000G4D
Text: ^□0 4 12 5 D00 0G4 D ÖSb IHTM HITTITE MICROWAVE CORPORATION GaAs MMIC 2.5 Watt Power Amplifier HMC139 JANUARY 1994 Features ON-CHIP MATCHING CIRCUITRY 30% POWER-ADDED EFFICIENCY 12dB GAIN FROM 4 TO 7 GHz 2.5 WATT OUTPUT POWER General Description The HMC139 is a GaAs MMIC amplifier
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D000G4D
HMC139
HMC139
2 Watt rf Amplifier
5 watt microwave amplifier
10 watt 16 ohm power amplifier
"15 GHz" power amplifier 10 watt
D000G4D
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336E-01
Abstract: No abstract text available
Text: Order this data sheet by MRF10005H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10005H* Microwave Power Transistor 5 Watt NPN 960-1215 MHz Designed for CW and long pulsed common base amplifiers. C P liO Guaranteed Performance at 1215 MHz - Output Power = 5 Watts CW
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MRF10005H*
MRF10005HX
MRF10005HXV
MRF10005HS
MRF10005HC
336E-02
MRF10005H/D
PHX31248-1
MRF10005H/D
336E-01
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Untitled
Abstract: No abstract text available
Text: MICROWAVE TECHNOLOGY bbE D • L.1241DD DDDD3DG 5 5 6 ■ NRblV MwT -12 GP / SP / HP 18GHz HIGH POWER GaAs FETCHIP kàâ kM MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • 0.5 WATT POWER OUTPUT AT 12 GHZ • +37 dBm THIRD ORDER INTERCEPT
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1241DD
18GHz
MwT-12
-F94-
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MWT671HP
Abstract: No abstract text available
Text: MwT - 6 18 GHz High Power G aAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES 292 tool iseJ I—I » —I U J Isol - 33*-CHIP THICKNESS = 12 5 M ORONS MwT-6 • • • • • • 0.5 WATT POWER OUTPUT AT 12 GHZ
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-F54-
MWT671HP
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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