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    500 V N CHANNEL MOSFET Search Results

    500 V N CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    500 V N CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC-89

    Abstract: Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


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    PDF Si1029X SC-89 08-Apr-05 SC-89

    SI1029X-T1GE3

    Abstract: SC-89 Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


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    PDF Si1029X SC-89 18-Jul-08 SI1029X-T1GE3 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


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    PDF Si1029X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


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    PDF Si1029X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    transistor 2432

    Abstract: SC-89 Si1029X marking 2432 transistor C 2432 2432 C
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


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    PDF Si1029X 2002/95/EC SC-89 11-Mar-11 transistor 2432 SC-89 marking 2432 transistor C 2432 2432 C

    W26NM50

    Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
    Text: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω


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    PDF STW26NM50 STU26NM50, STU26NM50I O-247 Max220 Max220I STU26NM50 O-247 W26NM50 26nm50 STU26NM50 STU26NM50I STW26NM50

    Untitled

    Abstract: No abstract text available
    Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


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    PDF FQA13N50CF

    22NM50

    Abstract: STB22NM50 STB22NM50-1 STP22NM50 STP22NM50FP
    Text: STP22NM50 - STP22NM50FP STB22NM50 - STB22NM50-1 N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS on Rds(on)*Qg ID STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 500 V 500 V 500 V 500 V <0.215Ω <0.215Ω


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    PDF STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 O-220/FP/D2PAK/I2PAK STP22NM50 STB22NM50 22NM50 STB22NM50-1 STP22NM50FP

    Untitled

    Abstract: No abstract text available
    Text: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


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    PDF FQB10N50CF

    Untitled

    Abstract: No abstract text available
    Text: FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Features Description • 13 A, 500 V, RDS on = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


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    PDF FQPF13N50CF

    Untitled

    Abstract: No abstract text available
    Text: FQD6N50C N-Channel QFET MOSFET 500 V, 4.5 A, 1.2 Ω Features Description • 4.5 A, 500 V, RDS on = 1.2 Ω (Max.) @VGS = 10 V, ID = 2.25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


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    PDF FQD6N50C

    Untitled

    Abstract: No abstract text available
    Text: FQI13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 mΩ Features Description • 13 A, 500 V, RDS on = 480 mΩ (Max.) @VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


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    PDF FQI13N50C

    STB5NC50

    Abstract: STB5NC50-1 STP5NC50 STP5NC50FP
    Text: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω


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    PDF STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 O-220/FP/D2PAK/I2PAK STP5NC50 STB5NC50 O-220 STB5NC50-1 STP5NC50FP

    Untitled

    Abstract: No abstract text available
    Text: FQB9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 mΩ Features Description • 9 A, 500 V, RDS on = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


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    PDF FQB9N50C

    n50a

    Abstract: 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A
    Text: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous


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    PDF O-247 O-204 O-204 O-247 n50a 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A

    Untitled

    Abstract: No abstract text available
    Text: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is


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    PDF FQAF16N50

    SIHS20N50C

    Abstract: N-channel MOSFET to-247 mosfet 1208
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 20 A, 500 V, RDS on max . = 270 mW at VGS = 10 V I INNOVAT AND TEC O L OGY SiHS20N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Cell Technology in Super TO-247 Package


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    PDF SiHS20N50C-E3 O-247 SiHS20N50C S11-0112-Rev. 31-Jan-11 VMN-PT0260-1208 N-channel MOSFET to-247 mosfet 1208

    p9nk50zfp

    Abstract: P9NK50Z mosfet p9nk50zfp P9NK50 B9NK50Z STP9NK50ZFP Equivalent p9nk50zf B9NK50 STP9NK50ZFP STB9NK50ZT4
    Text: STP9NK50Z - STP9NK50ZFP STB9NK50Z N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.85 Ω < 0.85 Ω < 0.85 Ω


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    PDF STP9NK50Z STP9NK50ZFP STB9NK50Z O-220/TO-220FP/D2PAK STP9NK50Z O-220 O-220FP p9nk50zfp P9NK50Z mosfet p9nk50zfp P9NK50 B9NK50Z STP9NK50ZFP Equivalent p9nk50zf B9NK50 STP9NK50ZFP STB9NK50ZT4

    w20nk50z

    Abstract: STP20NK50Z B20NK50Z STB20NK50ZT4 STW20NK50Z ST W20NK50 STW20NK50Z STB20NK50Z B20NK50
    Text: STP20NK50Z - STW20NK50Z STB20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/D2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STB20NK50Z STP20NK50Z STW20NK50Z • ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.27 Ω < 0.27 Ω < 0.27 Ω 20 A


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    PDF STP20NK50Z STW20NK50Z STB20NK50Z O-220/D2PAK/TO-247 STP20NK50Z w20nk50z B20NK50Z STB20NK50ZT4 STW20NK50Z ST W20NK50 STW20NK50Z STB20NK50Z B20NK50

    W20NK50

    Abstract: P20NK50 B20NK50 w20nk50z W20NK b20nk50z STB20NK50ZT4 P20NK50Z STB20NK50Z STP20NK50Z
    Text: STP20NK50Z - STW20NK50Z STB20NK50Z N-CHANNEL 500V - 0.23Ω - 17A TO-220/D2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STB20NK50Z STP20NK50Z STW20NK50Z • ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.27 Ω < 0.27 Ω < 0.27 Ω 17 A


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    PDF STP20NK50Z STW20NK50Z STB20NK50Z O-220/D2PAK/TO-247 STP20NK50Z W20NK50 P20NK50 B20NK50 w20nk50z W20NK b20nk50z STB20NK50ZT4 P20NK50Z STB20NK50Z

    D6NK

    Abstract: P6NK50Z STP6NK50Z D6NK50 P6NK50 STF6NK50Z STD6NK50Z STD6NK50ZT4 STF6NK60Z F6NK50Z
    Text: STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 1.2 Ω < 1.2 Ω


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    PDF STP6NK50Z STF6NK60Z STD6NK50Z O-220 O-220FP STP6NK50Z STF6NK50Z O-220 O-220FP D6NK P6NK50Z D6NK50 P6NK50 STF6NK50Z STD6NK50Z STD6NK50ZT4 STF6NK60Z F6NK50Z

    f20nk50z

    Abstract: f20nk50 STP20NK50Z P20NK50Z stf20nk50 P20NK50 f20nk STF20NK50Z
    Text: STF20NK50Z, STP20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet — production data Features Order codes VDSS RDS on max STF20NK50Z STP20NK50Z 500 V 500 V < 0.27 Ω < 0.27 Ω PTOT ID


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    PDF STF20NK50Z, STP20NK50Z O-220FP O-220 STF20NK50Z STP20NK50Z O-220FP O-220 f20nk50z f20nk50 P20NK50Z stf20nk50 P20NK50 f20nk

    si1029x

    Abstract: No abstract text available
    Text: Si1029X_ Vishay Siliconix New Product Complementary N- and P-Channel 60-V D-S MOSFET TrenchFE T PRODUCT SUMMARY M OSFETs VDS(V) N-Channel P-Channel 60 -60 rDS(on) (Q ) l0 (m A ) 1.40 @ Vqq = 10 V 500 3 @ VGS = 4.5 V


    OCR Scan
    PDF Si1029X S-03518-- 11-Apr-01 SM029X S-03518--Rev. 11-Apr-01

    Untitled

    Abstract: No abstract text available
    Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM


    OCR Scan
    PDF IRFP450 O-247