SC-89
Abstract: Si1029X
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •
|
Original
|
PDF
|
Si1029X
SC-89
08-Apr-05
SC-89
|
SI1029X-T1GE3
Abstract: SC-89 Si1029X
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •
|
Original
|
PDF
|
Si1029X
SC-89
18-Jul-08
SI1029X-T1GE3
SC-89
|
Untitled
Abstract: No abstract text available
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si1029X
2002/95/EC
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
|
Untitled
Abstract: No abstract text available
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si1029X
2002/95/EC
SC-89
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
|
transistor 2432
Abstract: SC-89 Si1029X marking 2432 transistor C 2432 2432 C
Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21
|
Original
|
PDF
|
Si1029X
2002/95/EC
SC-89
11-Mar-11
transistor 2432
SC-89
marking 2432
transistor C 2432
2432 C
|
W26NM50
Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
Text: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω
|
Original
|
PDF
|
STW26NM50
STU26NM50,
STU26NM50I
O-247
Max220
Max220I
STU26NM50
O-247
W26NM50
26nm50
STU26NM50
STU26NM50I
STW26NM50
|
Untitled
Abstract: No abstract text available
Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar
|
Original
|
PDF
|
FQA13N50CF
|
22NM50
Abstract: STB22NM50 STB22NM50-1 STP22NM50 STP22NM50FP
Text: STP22NM50 - STP22NM50FP STB22NM50 - STB22NM50-1 N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS on Rds(on)*Qg ID STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 500 V 500 V 500 V 500 V <0.215Ω <0.215Ω
|
Original
|
PDF
|
STP22NM50
STP22NM50FP
STB22NM50
STB22NM50-1
O-220/FP/D2PAK/I2PAK
STP22NM50
STB22NM50
22NM50
STB22NM50-1
STP22NM50FP
|
Untitled
Abstract: No abstract text available
Text: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe
|
Original
|
PDF
|
FQB10N50CF
|
Untitled
Abstract: No abstract text available
Text: FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Features Description • 13 A, 500 V, RDS on = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe
|
Original
|
PDF
|
FQPF13N50CF
|
Untitled
Abstract: No abstract text available
Text: FQD6N50C N-Channel QFET MOSFET 500 V, 4.5 A, 1.2 Ω Features Description • 4.5 A, 500 V, RDS on = 1.2 Ω (Max.) @VGS = 10 V, ID = 2.25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
|
Original
|
PDF
|
FQD6N50C
|
Untitled
Abstract: No abstract text available
Text: FQI13N50C N-Channel QFET MOSFET 500 V, 13 A, 480 mΩ Features Description • 13 A, 500 V, RDS on = 480 mΩ (Max.) @VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
|
Original
|
PDF
|
FQI13N50C
|
STB5NC50
Abstract: STB5NC50-1 STP5NC50 STP5NC50FP
Text: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 • ■ ■ ■ ■ VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω
|
Original
|
PDF
|
STP5NC50
STP5NC50FP
STB5NC50
STB5NC50-1
O-220/FP/D2PAK/I2PAK
STP5NC50
STB5NC50
O-220
STB5NC50-1
STP5NC50FP
|
Untitled
Abstract: No abstract text available
Text: FQB9N50C N-Channel QFET MOSFET 500 V, 9 A, 800 mΩ Features Description • 9 A, 500 V, RDS on = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced
|
Original
|
PDF
|
FQB9N50C
|
|
n50a
Abstract: 12N50A 12n50 IXYS CORPORATION TO-204AA ups 017 IXTH max 3540 D-68623 IXTM12N50A
Text: Standard Power MOSFET IXTH 12 N50A IXTM 12 N50A VDSS ID25 RDS on 500 V 500 V 12 A 12 A 0.4 Ω 0.4 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V V GS Continuous
|
Original
|
PDF
|
O-247
O-204
O-204
O-247
n50a
12N50A
12n50
IXYS CORPORATION
TO-204AA
ups 017
IXTH
max 3540
D-68623
IXTM12N50A
|
Untitled
Abstract: No abstract text available
Text: FQAF16N50 N-Channel QFET MOSFET 500 V, 11.3 A, 320 mΩ Description Features • 11.3 A, 500 V, RDS on = 320 mΩ (Max.) @ VGS = 10 V, ID = 5.65 A • Low Gate Charge (Typ. 60 nC) • Low Crss (Typ. 35 pF) • 100% Avalanche Tested This N-Channel enhancement mode power MOSFET is
|
Original
|
PDF
|
FQAF16N50
|
SIHS20N50C
Abstract: N-channel MOSFET to-247 mosfet 1208
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - 500 V with 20 A, 500 V, RDS on max . = 270 mW at VGS = 10 V I INNOVAT AND TEC O L OGY SiHS20N50C-E3 N HN POWER MOSFETs O 19 62-2012 High-Voltage MOSFETs - 500 V N-Channel Gen. 6.4 Cell Technology in Super TO-247 Package
|
Original
|
PDF
|
SiHS20N50C-E3
O-247
SiHS20N50C
S11-0112-Rev.
31-Jan-11
VMN-PT0260-1208
N-channel MOSFET to-247
mosfet 1208
|
p9nk50zfp
Abstract: P9NK50Z mosfet p9nk50zfp P9NK50 B9NK50Z STP9NK50ZFP Equivalent p9nk50zf B9NK50 STP9NK50ZFP STB9NK50ZT4
Text: STP9NK50Z - STP9NK50ZFP STB9NK50Z N-CHANNEL 500V - 0.72Ω - 7.2A TO-220/TO-220FP/D2PAK Zener-Protected SuperMESH Power MOSFET TYPE STP9NK50Z STP9NK50ZFP STB9NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.85 Ω < 0.85 Ω < 0.85 Ω
|
Original
|
PDF
|
STP9NK50Z
STP9NK50ZFP
STB9NK50Z
O-220/TO-220FP/D2PAK
STP9NK50Z
O-220
O-220FP
p9nk50zfp
P9NK50Z
mosfet p9nk50zfp
P9NK50
B9NK50Z
STP9NK50ZFP Equivalent
p9nk50zf
B9NK50
STP9NK50ZFP
STB9NK50ZT4
|
w20nk50z
Abstract: STP20NK50Z B20NK50Z STB20NK50ZT4 STW20NK50Z ST W20NK50 STW20NK50Z STB20NK50Z B20NK50
Text: STP20NK50Z - STW20NK50Z STB20NK50Z N-CHANNEL 500V - 0.23Ω - 20A TO-220/D2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STB20NK50Z STP20NK50Z STW20NK50Z • ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.27 Ω < 0.27 Ω < 0.27 Ω 20 A
|
Original
|
PDF
|
STP20NK50Z
STW20NK50Z
STB20NK50Z
O-220/D2PAK/TO-247
STP20NK50Z
w20nk50z
B20NK50Z
STB20NK50ZT4
STW20NK50Z ST
W20NK50
STW20NK50Z
STB20NK50Z
B20NK50
|
W20NK50
Abstract: P20NK50 B20NK50 w20nk50z W20NK b20nk50z STB20NK50ZT4 P20NK50Z STB20NK50Z STP20NK50Z
Text: STP20NK50Z - STW20NK50Z STB20NK50Z N-CHANNEL 500V - 0.23Ω - 17A TO-220/D2PAK/TO-247 Zener-Protected SuperMESH Power MOSFET TYPE STB20NK50Z STP20NK50Z STW20NK50Z • ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 0.27 Ω < 0.27 Ω < 0.27 Ω 17 A
|
Original
|
PDF
|
STP20NK50Z
STW20NK50Z
STB20NK50Z
O-220/D2PAK/TO-247
STP20NK50Z
W20NK50
P20NK50
B20NK50
w20nk50z
W20NK
b20nk50z
STB20NK50ZT4
P20NK50Z
STB20NK50Z
|
D6NK
Abstract: P6NK50Z STP6NK50Z D6NK50 P6NK50 STF6NK50Z STD6NK50Z STD6NK50ZT4 STF6NK60Z F6NK50Z
Text: STP6NK50Z - STF6NK60Z STD6NK50Z N-CHANNEL 500V - 0.98Ω - 5.6A TO-220 / TO-220FP / DPAK Zener-Protected SuperMESH Power MOSFET TARGET DATA TYPE STP6NK50Z STF6NK50Z STD6NK50Z • ■ ■ ■ ■ ■ VDSS RDS on ID Pw 500 V 500 V 500 V < 1.2 Ω < 1.2 Ω
|
Original
|
PDF
|
STP6NK50Z
STF6NK60Z
STD6NK50Z
O-220
O-220FP
STP6NK50Z
STF6NK50Z
O-220
O-220FP
D6NK
P6NK50Z
D6NK50
P6NK50
STF6NK50Z
STD6NK50Z
STD6NK50ZT4
STF6NK60Z
F6NK50Z
|
f20nk50z
Abstract: f20nk50 STP20NK50Z P20NK50Z stf20nk50 P20NK50 f20nk STF20NK50Z
Text: STF20NK50Z, STP20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet — production data Features Order codes VDSS RDS on max STF20NK50Z STP20NK50Z 500 V 500 V < 0.27 Ω < 0.27 Ω PTOT ID
|
Original
|
PDF
|
STF20NK50Z,
STP20NK50Z
O-220FP
O-220
STF20NK50Z
STP20NK50Z
O-220FP
O-220
f20nk50z
f20nk50
P20NK50Z
stf20nk50
P20NK50
f20nk
|
si1029x
Abstract: No abstract text available
Text: Si1029X_ Vishay Siliconix New Product Complementary N- and P-Channel 60-V D-S MOSFET TrenchFE T PRODUCT SUMMARY M OSFETs VDS(V) N-Channel P-Channel 60 -60 rDS(on) (Q ) l0 (m A ) 1.40 @ Vqq = 10 V 500 3 @ VGS = 4.5 V
|
OCR Scan
|
PDF
|
Si1029X
S-03518--
11-Apr-01
SM029X
S-03518--Rev.
11-Apr-01
|
Untitled
Abstract: No abstract text available
Text: □ 1XYS J Standard Power MOSFET IRFP450 V DSS D cont D DS(on) 500 V 14 A 0.40 Q N-Channel Enhancement Mode Symbol Test Conditions V DSS Tj = 25 °C to 150°C 500 V v DGR ^ 500 V +20 V +30 V Maximum Ratings = 25 °C to 150°C; RGS = 1 MQ V GS Continuous VGSM
|
OCR Scan
|
PDF
|
IRFP450
O-247
|