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    500 V N CHANNEL MOSFET Search Results

    500 V N CHANNEL MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    500 V N CHANNEL MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SC-89

    Abstract: Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 08-Apr-05 SC-89

    w20nk50z

    Abstract: W20NK50 f20nk50 W20NK b20nk50z P20NK50 STP20NK50Z STF20NK50Z P20NK50Z B20NK50
    Text: STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener - protected TO-220, TO-247, TO-220FP, D2PAK Features Type VDSS RDS on max STB20NK50Z STF20NK50Z STP20NK50Z STW20NK50Z 500 V 500 V 500 V 500 V < 0.27 Ω


    Original     		PDF STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z O-220, O-247, O-220FP, STB20NK50Z STP20NK50Z w20nk50z W20NK50 f20nk50 W20NK b20nk50z P20NK50 STP20NK50Z STF20NK50Z P20NK50Z B20NK50

    SI1029X-T1GE3

    Abstract: SC-89 Si1029X
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel 60 P-Channel - 60 RDS(on) (Ω) ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • •


    Original     		PDF Si1029X SC-89 18-Jul-08 SI1029X-T1GE3 SC-89

    Untitled

    Abstract: No abstract text available
    Text: Vishay Intertechnology, Inc. HIGH-VOLTAGE MOSFETs E SERIES HIGH VOLTAGE 500 V, 600 V, and 650 V Super Junction N-Channel MOSFETs D SERIES HIGH VOLTAGE 400 V, 500 V, and 600 V Stripe Technology N-Channel MOSFETs www.vishay.com V I S H AY I N T E R T E C H N O L O G Y, I N C .


    Original     		PDF SiHx12N50E SiHx15N50E SiHx20N50E SiHx25N50E O-247 O-247AC O-220 O-220 O-220AB O-263)

    w20nk50z

    Abstract: STx20NK50Z W20NK50 b20nk50z STP20NK50Z f20nk50 P20NK50 STF20NK50Z B20NK50 F20NK50Z
    Text: STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected TO-220, TO-247, TO-220FP, D2PAK Features • Type VDSS RDS on max STB20NK50Z STF20NK50Z STP20NK50Z STW20NK50Z 500 V 500 V 500 V 500 V < 0.27 Ω


    Original     		PDF STB20NK50Z, STF20NK50Z STP20NK50Z, STW20NK50Z O-220, O-247, O-220FP, STB20NK50Z STP20NK50Z w20nk50z STx20NK50Z W20NK50 b20nk50z STP20NK50Z f20nk50 P20NK50 STF20NK50Z B20NK50 F20NK50Z

    si1029x

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    si1029x

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 18-Jul-08

    transistor 2432

    Abstract: SC-89 Si1029X marking 2432 transistor C 2432 2432 C
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 11-Mar-11 transistor 2432 SC-89 marking 2432 transistor C 2432 2432 C

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    26nm50

    Abstract: MAX220 U26NM50
    Text: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω


    Original     		PDF O-247 Max220 Max220I STW26NM50 STU26NM50 STU26NM50I STU26NM50, O-247 26nm50 U26NM50

    Untitled

    Abstract: No abstract text available
    Text: Si1029X Vishay Siliconix Complementary N- and P-Channel 60 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) N-Channel P-Channel 60 - 60 RDS(on) () ID (mA) 1.40 at VGS = 10 V 500 3 at VGS = 4.5 V 200 4 at VGS = - 10 V - 500 8 at VGS = - 4.5 V - 25 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si1029X 2002/95/EC SC-89 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    W26NM50

    Abstract: 26nm50 MAX220 STU26NM50 STU26NM50I STW26NM50
    Text: STW26NM50 STU26NM50, STU26NM50I N-CHANNEL 500V - 0.10Ω - 26A TO-247,Max220,Max220I Zener-Protected MDmesh Power MOSFET n n n n n TYPE VDSS RDS on ID STW26NM50 STU26NM50 STU26NM50I 500 V 500 V 500 V < 0.120 Ω < 0.120 Ω < 0.120 Ω 30 A 26 A 26 A TYPICAL RDS(on) = 0.10Ω


    Original     		PDF STW26NM50 STU26NM50, STU26NM50I O-247 Max220 Max220I STU26NM50 O-247 W26NM50 26nm50 STU26NM50 STU26NM50I STW26NM50

    Untitled

    Abstract: No abstract text available
    Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 480 mΩ Features Description • 15 A, 500 V, RDS on = 480 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar


    Original     		PDF FQA13N50CF

    Untitled

    Abstract: No abstract text available
    Text: Product Overview 2SK4221: Power MOSFET 500 V, 26 A, 240 mOhm Single N-Channel TO-3PB For complete documentation, see the data sheet Product Description 2SK4221 is a 500 V, 26 A, 240 mOhm single N-channel power MOSFET for general purpose switching applications.


    Original     		PDF 2SK4221: 2SK4221

    22NM50

    Abstract: STB22NM50 STB22NM50-1 STP22NM50 STP22NM50FP
    Text: STP22NM50 - STP22NM50FP STB22NM50 - STB22NM50-1 N-CHANNEL 500V - 0.16Ω - 20A TO-220/FP/D2PAK/I2PAK MDmesh Power MOSFET ADVANCED DATA TYPE VDSS RDS on Rds(on)*Qg ID STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 500 V 500 V 500 V 500 V <0.215Ω <0.215Ω


    Original     		PDF STP22NM50 STP22NM50FP STB22NM50 STB22NM50-1 O-220/FP/D2PAK/I2PAK STP22NM50 STB22NM50 22NM50 STB22NM50-1 STP22NM50FP

    Untitled

    Abstract: No abstract text available
    Text: FQB10N50CF N-Channel QFET FRFET® MOSFET 500 V, 10 A, 610 m Features Description • 10 A, 500 V, RDS on = 610 mΩ (Max.) @ VGS = 10 V, ID = 5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original     		PDF FQB10N50CF

    fqa13n50c

    Abstract: FQA13N50CF_F109
    Text: FQA13N50CF N-Channel QFET FRFET® MOSFET 500 V, 15 A, 48 mΩ Features Description • 15 A, 500 V, RDS on = 48 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar


    Original     		PDF FQA13N50CF FQA13N50CF fqa13n50c FQA13N50CF_F109

    Untitled

    Abstract: No abstract text available
    Text: FQPF13N50CF N-Channel QFET FRFET® MOSFET 500 V, 13 A, 540 mΩ Features Description • 13 A, 500 V, RDS on = 540 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe


    Original     		PDF FQPF13N50CF

    Untitled

    Abstract: No abstract text available
    Text: FQB5N50C N-Channel QFET MOSFET 500 V, 5 A, 1.4 Ω Features Description • 5 A, 500 V, RDS on = 1.4 Ω (Max.) @ VGS = 10 V, ID = 2.5 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		PDF FQB5N50C

    Untitled

    Abstract: No abstract text available
    Text: FQD6N50C N-Channel QFET MOSFET 500 V, 4.5 A, 1.2 Ω Features Description • 4.5 A, 500 V, RDS on = 1.2 Ω (Max.) @VGS = 10 V, ID = 2.25 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced


    Original     		PDF FQD6N50C

    DC/AC to DC smps circuit diagram

    Abstract: STB5NC50 STB5NC50-1 STP5NC50 STP5NC50FP DSASW003744
    Text: STP5NC50 - STP5NC50FP STB5NC50 - STB5NC50-1 N-CHANNEL 500V - 1.3Ω - 5.5A TO-220/FP/D2PAK/I2PAK PowerMesh II MOSFET TYPE STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 VDSS RDS on ID 500 V 500 V 500 V 500 V < 1.5Ω < 1.5Ω < 1.5Ω < 1.5Ω 5.5A 5.5A 5.5A 5.5A


    Original     		PDF STP5NC50 STP5NC50FP STB5NC50 STB5NC50-1 O-220/FP/D2PAK/I2PAK STP5NC50 STB5NC50 O-220 DC/AC to DC smps circuit diagram STB5NC50-1 STP5NC50FP DSASW003744

    p11nk50

    Abstract: p11nk50zfp B11NK50Z p11nk50z P11NK p11nk5 STB11NK50Z STB11NK50ZT4 STP11NK50Z VDD250
    Text: STB11NK50Z - STP11NK50ZFP STP11NK50Z N-CHANNEL 500V - 0.48Ω - 10A - TO220-TO220FP-D²PAK Zener-Protected SuperMESH MOSFET General features Type VDSS Package RDS on STB11NK50Z 500 V <0.52 Ω STP11NK50Z 500 V <0.52 Ω STP11NK50ZFP 500 V <0.52 Ω ID


    Original     		PDF STB11NK50Z STP11NK50ZFP STP11NK50Z O220-TO220FP-D STB11NK50Z STP11NK50ZFP O-220FP O-220 p11nk50 p11nk50zfp B11NK50Z p11nk50z P11NK p11nk5 STB11NK50ZT4 STP11NK50Z VDD250