2N6039
Abstract: 2N6036 2n60 5064 DIODE
Text: 2N6036 2N6039 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications 3 ■ Linear and switching industrial equipment
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2N6036
2N6039
OT-32
2N6039
2N6036
2n60
5064 DIODE
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Untitled
Abstract: No abstract text available
Text: 2N6036 2N6039 Complementary power Darlington transistors Features . • Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode s t ro Applications ■ eP Linear and switching industrial equipment
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2N6036
2N6039
OT-32
2N6036
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2SJ420
Abstract: No abstract text available
Text: Ordering number:EN5064A P-Channel Silicon MOSFET 2SJ420 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [2SJ420] 5 4 3 : Source 4 : Gate 5 : Drain 6 : Drain
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EN5064A
2SJ420
2SJ420]
2SJ420
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2SJ420
Abstract: No abstract text available
Text: Ordering number:EN5064A P-Channel Silicon MOSFET 2SJ420 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2116 [2SJ420] 5 4 1.27 0.595 Specifications 0.43 0.1 1.5 5.0
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EN5064A
2SJ420
2SJ420]
2SJ420
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Untitled
Abstract: No abstract text available
Text: Agilent 423B, 8470B, 8472B, 8473B/C Low Barrier Schottky Diode Detectors Data Sheet • Excellent broadband flatness • Low broadband SWR • High burnout protection • Environmentally rugged • Field replaceable diode elements Agilent 423B I 50 µA/div
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8470B,
8472B,
8473B/C
8470B
8472B
8473B
8473C
847xB/C
8472Bâ
8473Câ
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Untitled
Abstract: No abstract text available
Text: Agilent 8471E Coaxial RF Microwave Detector 0.01 GHz – 12 GHz Data Sheet The detector is designed for use in RF and microwave instrumentation and systems applications as the detecting element in leveling loops, for power monitoring and for wideband video
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8471E
8471E
5952-0802E
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Untitled
Abstract: No abstract text available
Text: Agilent 86205A/B & 86207A 50 Ω & 75 Ω RF Bridges Data Sheet 300 kHz to 3 GHz 50 Ω 300 kHz to 6 GHz (50 Ω) 300 kHz to 3 GHz (75 Ω) The 86205A/B and 86207A high directivity RF bridges offer unparalleled performance in a variety of general purpose applications. They are ideal for accurate reflection
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6205A/B
6207A
6205A/B
6207A
5091-3117E
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Untitled
Abstract: No abstract text available
Text: Agilent 83036C Coaxial GaAs Directional Detector 0.01 to 26.5 GHz Data Sheet Features and Description • Exceptional flatness: +1 dB • Extremely broadband: 0.01 ‑ 26.5 GHz • Compact size • Environmentally rugged The Agilent 83036C is a broadband microwave power
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83036C
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U2722
Abstract: No abstract text available
Text: Agilent U2941A Parametric Test Fixture Data Sheet The Agilent U2941A parametric test fixture is designed to complement usage of the Agilent U2722A USB modular source measure unit in the testing of semiconductor components, including SMT and DIP ICs. The bundled Agilent Parametric
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U2941A
U2941A
U2722A
U2751A
U2722A.
5989-9741EN
U2722
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Untitled
Abstract: No abstract text available
Text: Agilent N7782B PER Analyzer and N7783B Thermal Cycling Unit Data Sheet Figure 1. N7782B PER analyzer Introduction Agilent’s N7782B Series of polarization extinction ratio PER Analyzers has been designed for high speed and highly accurate testing of PER in PM fibers. The polarimetric measurement principle guarantees reliable measurements of PER values of up to 50 dB.
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N7782B
N7783B
5989-8111EN
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Untitled
Abstract: No abstract text available
Text: Agilent Waveguide Power Sensors Data Sheet Compatible with Your Current Agilent Power Meter Make accurate and reliable measurements in the 50 to 110 GHz frequency range with Agilent’s family of waveguide power sensors. Agilent waveguide power sensors are fully compatible with Agilent EPM E4418B/19B,
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E4418B/19B,
N1913A/14A)
E4416A/17A)
N1911A/12A)
V8486A
W8486A
0100A,
E1416A,
E4418A,
E4419A
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Untitled
Abstract: No abstract text available
Text: Agilent 11970 Series Harmonic Mixers Data Sheet 18 to 110 GHz 11970K*, 11970A, 11970Q, 11970U, 11970V, 11970W For use with the Agilent E4407B, 8560E/EC Series, 8566B, 71000 Series, and PSA Series spectrum analyzers, plus the N9030A PXA signal analyzer Exceptional performance
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11970K*
1970A,
11970Q,
11970U,
1970V,
1970W
E4407B,
8560E/EC
8566B,
N9030A
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apc-7 connector
Abstract: No abstract text available
Text: Agilent 8761A/B Microwave Switches Technical Overview • Broadband dc to 18 GHz • User specified connectors (over 250 possible combinations) • Excellent repeatability (typically 0.03 dB after 1,000,000 cycles) • Environmentally rugged Product Description
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761A/B
8761B
50-ohm
8761B
spa69
apc-7 connector
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ic 8893
Abstract: 1N712D
Text: Microsemi Zener Regulator Diodes Part N um ber ZEN M icrosem i j Package D ivision O utline Type Mil Spec Data P ow er | Vz W : (V) Sheet ID Izt Í Zzt (m A) , ( f i ) Zzk < f i) IR <uA) VR (V) Toi. (+/-%) JAN TX1N 4099 Scottsdale DO-7 STD 435 8885 0.25
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DO-35
DO-213AA
ic 8893
1N712D
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Z808
Abstract: Z226 ANA 608 MZ210 1N5105 marking 1n diode MZ80 845MZ Zener 224 Z860
Text: 1N 5063 - 1N5117 M Z 806 - M Z 890, MZ 210 • MZ 2 4 0 Mierosem i Corp. diode experts SANTA ANA, CA SCOTTSDALE, A Z / For m ore inform ation call: 714 979-8220 3-WATT G USS ZENER DIODES FE A TU R E S • • • • • • • Microminiature package.
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1N5117
P-16J
MZ806
MZ211
MZ111)
1N5117,
Z808
Z226
ANA 608
MZ210
1N5105
marking 1n diode
MZ80
845MZ
Zener 224
Z860
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1N4097
Abstract: 1N5107 1N508 MZ-11 MZ240 MZ210 1N5117 MZ80 1N5064 1N5065
Text: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 Micro/semi Corp. The diode expprts SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.
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1N5063
1N5117
MZ806
MZ890,
MZ211
MZ111)
1N5117,
1N4097
1N5107
1N508
MZ-11
MZ240
MZ210
MZ80
1N5064
1N5065
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IN5106
Abstract: uz128 IN5072 in 5096 IN5085 1N5115 IN5099 UZ111 Unitrode Power Zeners UZ110
Text: POWER ZENERS UZ706 SERIES UZ806 SERIES 3 Watt FEATURES DESCRIPTION • 10 Times Greater Surge Rating than Conventional 1 Watt Types • Small Physical Size Fused-in-glass metallurgically bonded 3 watt zener diodes. ABSO LUTE MAXIMUM RATINGS Zener Voltage, V .-.
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60-cycle
IN5106
uz128
IN5072
in 5096
IN5085
1N5115
IN5099
UZ111
Unitrode Power Zeners
UZ110
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DIODE in 5060
Abstract: KSD5072
Text: TRANSISTORS FUNCTION GUIDE 2-4. Horizontal Defelection Output Transistors 2.4.1 TO-3P F Type Transistors VcBO VcEO lc hcc Device Switching Time VrctsatW) •c (A) MIN lc (A) Ib (A) ton t$lg 0‘S) MAX 0<S) MAX Pc tt (mS) MAX (W) Comment (V) (V) (A) (NPN)
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KSD5070
KSD5071
KSD5072
KSD5074
KSD5075
KSD5076
DIODE in 5060
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Untitled
Abstract: No abstract text available
Text: 1N5063 - 1N5117 MZ806 - MZ890, MZ 210 - MZ 240 Micro/semi Corp. Thp diode expprls SANTA A N A , CA F o r m o r e i n f o r m a ti o n call: 714 979-8220 3-WATT GLASS ZENER DIODES FEATURES • • • • • • • Microminiature package. Voidless hermetically sealed glass package.
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1N5063
1N5117
MZ806
MZ890,
MZ111)
1N5117,
Z806-M
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Untitled
Abstract: No abstract text available
Text: POWER ZENERS UZ706 SERIES UZ806 SERIES UZ706HR2 SERIES UZ806HR2 SERIES 3 Watt FEATURES • 10 Tim es Greater Surge R ating than Conventional 1 W att Types • S m all P h ysical Size DESCRIPTIO N Fused-in-glass m e ta llu rg ica lly bonded 3 watt zener diodes.
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UZ706
UZ806
UZ706HR2
UZ806HR2
60-cycle
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2n5063 thyristor
Abstract: 2N5060 2N5064 sm 6aa
Text: MOTOROLA SC DIODES/OPTO 3TE D E3 b3b?255 DOflBbbO 0 HI110T7 2N5060 thru 2N5064 S ilic o n C o n tro lle d R e c tifie rs R everse Blocking Triode T h yristo rs . . . A n n u la r PNPN d e vic e s d esig ned fo r high v o lu m e co n su m e r a p p lica tio n s su ch
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HI110T7
-226A
2N5060
2N5064
2n5063 thyristor
2N5064
sm 6aa
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IN5048
Abstract: IN5046 IN5099 1N5041 IN5042 IN5040 IN5068 IN5047 IN5082 Diode IN5082
Text: Zener Type No. Zener Voltage 3t Irr @ mA Volts Max. Zener Impedance @ Izt Ohms 1N5023 1N5024 1N5025 13.0 14.0 15.0 48.0 45.0 42.0 4.8 5.4 6.0 1N5026 1N5027 1N5028 1N5029 1N5030 1N5031 I N 5032 1N5033 1N5034 16.0 17.0 18.0 19.0 20.0 22,0 39.0 37.0 35.0 33.0
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1N5023
1N5024
1N5025
IN5026
1N5027
IN5028
1N5029
1N5030
1N5031
IN5032
IN5048
IN5046
IN5099
1N5041
IN5042
IN5040
IN5068
IN5047
IN5082
Diode IN5082
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3498H-64
Abstract: 3494H-64 3494-80 3496H-64 3491H-64 3492H-64 3493-64 3494-64 3498-64 349h
Text: Series 349 and 349H Octave-Band 11 Bit Digital PIN Diode Attenuators T h e S e rie s 3 4 9 and 34 9 H p ro g ra m m a b le a tte n u a to rs p ro v id e g re a te r th a n o c ta ve -b a n d p e rfo rm a n c e a n d w id e p ro g ra m m in g fle x ib ility in
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rft sk 3000
Abstract: RFT r 4100 service-mitteilungen KF 517 GER-A RFT Service Mitteilung servicemitteilungen Mitteilung VEB RFT RFT Transistoren robotron
Text: SERVICE-MITTEILUNGEN IRIFÜT1 1R A D I O - t e / e v i s i o n 1 45 VE B IN D U S T R IE V E R T R IE B R U N D F U N K U N D F E R N S E H E N April-Mai I“ Seite 1-8 1981 Mitteilung aus dem VEB RFT Industrievertrieb R.u.F. Leipzig Einheitliche Anwendung von Vordrucken bei der Bearbei
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K60-0r02-Kassetten
rft sk 3000
RFT r 4100
service-mitteilungen
KF 517
GER-A
RFT Service Mitteilung
servicemitteilungen
Mitteilung VEB RFT
RFT Transistoren
robotron
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