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    G6N50E1D

    Abstract: G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor
    Text: HGTP6N40E1D, HGTP6N50E1D d ì H a r r is \MÌ S E M I C O N D U C T O R 6A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package JEDEC TO-220AB • 6A, 400V and 500V EMITTER • Latch Free Operation COLLECTOR GATE • T f a l l : < 1.0|iS


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    HGTP6N40E1D, HGTP6N50E1D O-220AB 50iiH G6N50E1D G6N50E1 G6N50 HGTP6N50E1D 400v 6a transistor PDF

    2n6250

    Abstract: Si948 2n6251
    Text: File Number 523 HARRIS SEMICON] SECTOR 2N6249, 2N6250, 2N6251 SbE D 43G2571 004Q5B7 75Ö H H A S ^ 450-V, 30-A, 175-W Silicon N-P-N Switching Transistors 3 5 - / 9 For Switching Applications in Industrial and Commercial Equipment Features: • High voltage ratings:


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    2N6249, 2N6250, 2N6251 2N62S1) 2W6250) 2N6249) 2N6250 2N6251 T0-204AA Si948 PDF

    LT1076CV

    Abstract: No abstract text available
    Text: r r u n w i _LT1074/LT1076 TECHNOLOGY Step-D own Switching R egulator FCRTUIKS • ■ ■ ■ ■ ■ ■ ■ ■ 5A On-Board Switch LT1074 Up to 200kHz Switching Frequency Greatly Improved Dynamic Behavior Available in Low Cost 5-Lead Packages


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    LT1074/LT1076 LT1074) 200kHz LT1074 LT1074/LT10 LT1074 LT1076 T0-220 LT1076CV PDF

    s 2 umi 1A 250V

    Abstract: 2N6249 2N6251 2N6250 N62S n6250
    Text: 2N6249 2N6250 2N6251 POWER TRANSISTORS 10A, 450V, Fast Switching, Silicon NPN Mesa FEATURES • Collector-Base Voltage: up to 450V • Peak Collector Current: 30A • Low Saturation Voltage • Maximum Safe Area of Operation D ESCRIPTION These high voltage glass passivated power


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    2N6249 2N6250 2N6251 passi20 s 2 umi 1A 250V 2N6251 N62S n6250 PDF