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    ABLIC Inc. S-8351B50MA-J5JT2G

    IC REG BOOST 300MA SOT23-3
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    DigiKey S-8351B50MA-J5JT2G Reel 3,000
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    Avnet Americas S-8351B50MA-J5JT2G Reel 16 Weeks 3,000
    • 1 $0.65
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    Mouser Electronics S-8351B50MA-J5JT2G
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    ABLIC Inc. S-8354A50MA-JRJT2G

    IC REG BOOST 5V 300MA SOT23-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey S-8354A50MA-JRJT2G Reel 3,000
    • 1 -
    • 10 -
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    • 1000 -
    • 10000 $0.76417
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    Avnet Americas S-8354A50MA-JRJT2G Reel 16 Weeks 3,000
    • 1 $0.8
    • 10 $0.8
    • 100 $0.8
    • 1000 $0.8
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    Mouser Electronics S-8354A50MA-JRJT2G
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    • 10000 $0.749
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    50MAJ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAMs INFRARED EMITTER -TLN222 TENTATIVE DATA TLN222 INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION U n it in mm High radiant power :Po = 14mW (TYP.)at Ip = 50mA Wide radiant pattern : 6$ = ±21” (TYP.) High speed response :tr, tf=15ns (TYP.)


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    PDF TLN222 TLN222) 10T7250

    TLN226

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TLN226 TO SHIBA INFRARED LED G a A M s INFRARED EMITTER TLN226 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION High radiant power Po = 18mW TYP. at Ip = 50mA Narrow radiant pattern 0 * = ± 13° (TYP.) High speed response tr, tf= 30ns (TYP.)


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    PDF TLN226 TLN226

    100ria

    Abstract: 25V6K RN5305 2N4494
    Text: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V


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    PDF 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 100ria 25V6K RN5305 2N4494

    FJ CHEMICALS

    Abstract: No abstract text available
    Text: TO SH IB A TENTATIVE TLN225 TOSHIBA INFRARED LED GaAfAs INFRARED EMITTER TI N 1 1 * • ■ H F' 'm INFRARED LED FOR 5PACE-OPTICAL-TRANSMI5SION High radiant power Po = 18mW Typ. at IF = 50mA ± 21° (Typ.) Wide radiant pattern High speed response U nit in mm


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    PDF TLN225 FJ CHEMICALS

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TLN226 TOSHIBA INFRARED LED GaAMs INFRARED EMITTER TLN226 Unit in mm INFRARED LED FOR 5PACE-OPTICAL-TRANSMI5SION Po = 18mW TYP. at Ip = 50mA High radiant power Narrow radiant pattern 0 * = ± 13° (TYP.) tr, tf= 30ns (TYP.) High speed response


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    PDF TLN226 100kHz,

    Untitled

    Abstract: No abstract text available
    Text: SHF-0186, -0186K DC-12 GHz, 0.5 Watt AIGaAs/GaAs HFET October, 1995 Features - AIGaAs/GaAs H e te ro stru ctu re FET T ech n o lo g y - High Pow er Added E fficie n cy: Up to 40% - High A sso cia te d G ain: 16dB T ypical at 2GHz - A vailable in P lastic o r Flanged Ceram ic Package


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    PDF SHF-0186, -0186K DC-12 Id-150mA) 50mAj 150mA,

    80m60

    Abstract: No abstract text available
    Text: TO S H I B A -CDISCRETE/OPTOJ 9097250 T O S H IB A Sb DE § 10^7250 0007347 4 CDI S C R E T E /O PTO J? J - 2/ / SILICON PNP TRIPLE DIFFUSED TYPE PCT PROCESS) Unit in mm 15.9MAX. POWER AMPLIFIER APPLICATIONS. gf3.8±0.2 FEATURES: • Complementary to 2SD716.


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    PDF 2SD716. 2SB686 80m60

    TLN221

    Abstract: No abstract text available
    Text: TO SHIBA TENTATIVE TLN221 TO SHIBA INFRARED LED G a A M s INFRARED EMITTER TLN221 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION High radiant power : Po = 18mW TYP. at Ip = 50mA Wide radiant pattern : d% = ±21° (TYP.) High speed response : tr, tf= 30ns (TYP.)


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    PDF TLN221 TLN221

    O7AG

    Abstract: TLN223
    Text: TOSHIBA TENTATIVE TLN223 TOSHIBA INFRARED LED GaAMs INFRARED EMITTER TLN223 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION o.7±ag High radiant power Po = 18mW TYP. at Ip = 50mA Narrow radiant pattern 0 * = ± 13° (TYP.) High speed response tr, tf= 30ns (TYP.)


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    PDF TLN223 O7AG TLN223

    Untitled

    Abstract: No abstract text available
    Text: N aan a oaivj. ËJ # B S + fr S '^ ç ü ô i f t i o o o t f p y $ d r fô w o s : m m m w t o 5 4 - * 3 f f l # 8 0 ) ± m r ) f S ¥ l : * Í t ' n W Í 1 ÍS I 5 < ¥ » : I í W ? ¿ a#8 ^ ± m oos : u & is g w r% 9 + H H % 96~06 : s ® ^ 2 v^ a z + o fr : K S


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    PDF 106kpa, 106kpa

    UP050CH101

    Abstract: CE400 UP050B103 p050y ep050 UP050CH221 marking s350 dd0006 UP050CH220J
    Text: T v - WU ' J — ' í7 H > x > 1í' AXIAL LEADED CERAMIC CAPACITORS OPERATING TEMP. -2 5 ~ + 8 5 °C L ' g S t 5 B ? o aq < 7 » í f c f r ' ñ J i É V1F£<, n % k ® & T y 7 , £ j* —.X feiÄ'J'' • C la s s 1 p n li[l]iS D S M i$ 'ttiS iE S t> ')i|> ^ IS ^ t4 < D S S ;'ib o B,


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    PDF

    TLN227

    Abstract: No abstract text available
    Text: TOSHIBA TLN227 TENTATIVE TO SHIBA INFRARED LED G a A M s INFRARED EMITTER TLN227 Unit in mm INFRARED LED FOR SPACE-OPTICAL-TRANSMISSION 1 .5 ± 0.2 High radiant power Po = 18mW TYP. at Ip = 50mA Narrowest radiant pattern d ± = ± b ° (TYP.) High speed response


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    PDF TLN227 TLN227