Untitled
Abstract: No abstract text available
Text: SMLK1 / SMLK2 series PSML2 Data Sheet lFeatures lOutline • High heat radiation "PSML2" series • Low package by flat frame structure • High Luminous Intensity lSize 1006 0402 4520 (1808) 4.5x2.0mm (t=0.6mm) 1.0×0.6mm (t=0.2mm) Color Type WB lDimensions
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SMLK18WBJBW
SMLK18WBJDW
R1102A
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A2 12 zener diode
Abstract: diode ZENER A2 6 A2 9 zener diode
Text: BZX55B2V4-BZX55B75 500mW, 2% Tolerance SMD Zener Diode Small Signal Diode DO-35 Axial Lead HERMETICALLY SEALED GLASS D Features C Wide zener voltage range selection : 2.4V to 75V VZ Tolerance Selection of ±2% A Moisture sensitivity level 1 Matte Tin Sn lead finish with Nickel(Ni) underplate
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BZX55B2V4-BZX55B75
500mW,
DO-35
OD-27)
C/10s
A2 12 zener diode
diode ZENER A2 6
A2 9 zener diode
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Untitled
Abstract: No abstract text available
Text: Small-sized Class-D Speaker Amplifiers Analog Input Monaural Class-D Speaker Amplifier No.10101EAT07 BD5467GUL ●Description BD5467GUL is a monaural Class-D speaker amplifier that contained ALC function for mobile phone, portable type electronic devices etc. LC filter of speaker output is not needed, can form monaural speaker amplifier with 3 external parts.
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10101EAT07
BD5467GUL
BD5467GUL
262ms/1dB
R1010A
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BU2152FS
Abstract: BD7851FP BU2050F BU2092F BU2092FV BU2099FV HSOP25 SSOP-A32 SSOP-B20
Text: Serial-in / Parallel-out Driver Series Serial / Parallel 4-input Drivers No.09051EAT03 ●Description Serial-in-parallel-out driver incorporates a built-in shift register and a latch circuit to control a maximum of 24 LED by a 4-line
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BU2050F
BU2092F
BU2092FV
BU2099FV
BD7851FP
BU2152FS
09051EAT03
BU2152FS
HSOP25
SSOP-A32
SSOP-B20
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radioactivity
Abstract: No abstract text available
Text: 1/4 STRUCTURE Silicon Monolithic Integrated Circuit PRODUCT NAME Over Voltage Protection Controller with Internal FET MODEL NAME BD6044GUL BLOCK DIAGRAM See Figure 1 PACKAGE DIMENSIONS See Figure 2 FEATURES ●Overvoltage Protection up to 36V ●Internal Low Ron 125m FET
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BD6044GUL
VCSP50L1
R0039A
radioactivity
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58LT00F
Abstract: TA58LT00F
Text: TA58LT00F 東芝バイポーラ形リニア集積回路 シリコン モノリシック TA58LT00F 150 mA ON/OFF 機能付きトラッキングレギュレータ TA58LT00F は､ON/OFF 機能付きの 150 mA 最大 小型面実装型 ロードロップアウトレギュレータです。負荷に必要な電圧をマイコン等
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TA58LT00F
TA58LT00F
58LT00F
2002/95/EC)
58LT00F
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LQM21PN2R2MC0
Abstract: LQM21PN2R2 BD9180GUL
Text: Single-chip Type with Built-in FET Switching Regulator Series Output 0.5A or Less High-efficiency Step-down Switching Regulator with Built-in Power MOSFET BD9180GUL No.09027EAT28 ●Description The BD9180GUL is a step-down Switching regulator designed to produce a low voltage from 1-cell Li-Ion batteries.
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BD9180GUL
09027EAT28
BD9180GUL
R0039A
LQM21PN2R2MC0
LQM21PN2R2
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capacitor AA8
Abstract: 27.0000MHZ KXO-01-1Z-36.0000MHZ
Text: 1/4 Structure Product Silicon monolithic Integrated circuit Clock Generator Type BU7346GUL Feature To generate clocks for digital still camera system To generate clocks by connecting reference 27.0000MHz SEL pin allowing for the selection of 38.0000MHz or 36.0000MHz
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BU7346GUL
0000MHz
0000MHz
R0039A
capacitor AA8
27.0000MHZ
KXO-01-1Z-36.0000MHZ
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SOD JEDEC
Abstract: No abstract text available
Text: BAS85 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage Applications Applications where a very low forward voltage is required Absolute Maximum Ratings T, = 25°C Parameter
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BAS85
50mmx50mmx1
01-Apr-99
BAS85_
-April-99
SOD JEDEC
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Untitled
Abstract: No abstract text available
Text: _BAS86 Vishay Telefunken Schottky Barrier Diode Features • Integrated protection ring against static discharge • Very low forward voltage ¿y Applications Applications where a very low forward voltage is required Absolute Maximum Ratings Tj = 25°C
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BAS86
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: T em ic TZMC S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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OCR Scan
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PDF
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50mmx50mmx
200mA
24-Jun-96
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Untitled
Abstract: No abstract text available
Text: TZM5221 B.TZM5267B Vishay Telefunken Silicon Z-Diodes Features • Very sharp reverse characteristic • Very high stability • Electrical data identical 1N5221 B.1 N5267B • Low reverse current level • Vz-tolerance ± 5% with the \ devices Applications
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TZM5221
TZM5267B
1N5221
N5267B
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: LL4151_ Vishay Telefun ken Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4151 Applications Extreme fast switches Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage
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LL4151_
1N4151
50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: Tem ic LL4154 Semiconductors Silicon Epitaxial Planar Diodes Features • Electrical data identical with the device 1N4154 Applications Extreme fast switchess Absolute Maximum Ratings Tj = 25°C Parameter Repetitive peak reverse voltage Reverse voltage Peak forward surge current
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LL4154
1N4154
50mmx50mmx
24-Jun-96
24-Iun-96
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1009C
Abstract: No abstract text available
Text: BA679.BA679S Vishay Telefun ken Silicon PIN Diodes Features • Wide frequency range 10 MHz to 1 GHz Applications Current controlled attenuators HF resistance in adjustable Absolute Maximum Ratings Tj = 25°C Parameter Reverse voltage Forward current Junction temperature
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BA679
BA679S
50mmx50mmx1
1009c
01-Apr-99
1009C
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Ip200mA
Abstract: 600L100
Text: Tem ic TZMB Semiconductors Silicon Epitaxial Planar Z-Diodes Features • • • • • • Very sharp reverse characteristic Low reverse current level Available with tighter tolerances Very high stability Low noise Vz-tolerance ± 2% Applications y49.n1
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--300K/W
50mmx50mmxl
24-Jun-96
Ip200mA
600L100
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Untitled
Abstract: No abstract text available
Text: TZMB._ Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • y Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • Vz-tolerance ± 2%
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50mmx50mmx1
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: TZS4678.TZS4717 Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Zener voltage specified at 50 • Maximum delta Vz given from 10 ¡xA to 100 iA • Very high stability • Low noise Applications Voltage stabilization Absolute Maximum Ratings
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TZS4678.
TZS4717
300K/W
50mmx50mmx1
100mA
Number85613
-Apr-99
01-Apr-99
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Untitled
Abstract: No abstract text available
Text: LS4151_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diode Features • Electrical data identical with the device 1N4151 • Quadra Melf package Applications Extreme fast switches Absolute Maximum Ratings T¡ = 25°C Parameter Repetitive peak reverse voltage
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LS4151_
1N4151
01-Apr-99
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FZIT
Abstract: No abstract text available
Text: TZQ5221 B.TZQ5267B Vishay Telefunken Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise Applications Voltage stabilization
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TZQ5221
TZQ5267B
--300K/W
50mmx50mmx1
01-Apr-99
FZIT
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Untitled
Abstract: No abstract text available
Text: Tem ic BA982.BA983 Semiconductors Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance • Quadra M elf package Applications Band switching in VH F-tuners Absolute Maximum Ratings Tj = 25 °C
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BA982
BA983
50mmx50mmx
24-Jun-96
BA983
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Untitled
Abstract: No abstract text available
Text: LL4150_ VISHAY Vishay Telefunken Silicon Epitaxial Planar Diodes Features • Low forward voltage drop • High forward current capability Applications High speed switch and general purpose use in computer and industrial applications Absolute Maximum Ratings
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LL4150_
01-Apr
LL4150
01-Apr-99
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Telefunken u 439
Abstract: No abstract text available
Text: T e m ic t z m b . S e m i c o n d u c t o r s Silicon Epitaxial Planar Z-Diodes Features • Very sharp reverse characteristic • Low reverse current level • Available with tighter tolerances • Very high stability • Low noise • V/-tolerance ± 2%
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OCR Scan
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PDF
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300K/W
50mmx50mmxl
D-74025
24-Jun-96
Telefunken u 439
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DO 213
Abstract: No abstract text available
Text: Tem ic BA682.BA683 S e m i c o n d u c t o r s Silicon Planar Diodes Features • Low differential forward resistance • Low diode capacitance • High reverse impedance Applications Band switching in VHF-tuners Absolute Maximum Ratings Tj = 25 °C Parameter
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BA682
BA683
50mmx50mmx
24-Jun-96
100mA
100MHz,
200MHz,
DO 213
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