R125 753 000
Abstract: 50s 22 M8rg
Text: SMA CHARACTERISTICS TEST / CHARACTERISTICS VALUES / REMARKS ELECTRICAL CHARACTERISTICS 50 8 Impedance Frequency range Typical V.S.W.R. S straight connector S right angle connector Frequency .085” .141” 2.6/50S 5/50S .085” .141” 2.6/50S 5/50S Typical insertion loss in dB
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6/50S
5/50S
5/50S
10--6mmHg
R125 753 000
50s 22
M8rg
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.141 SEMI-RIGID CABLE
Abstract: No abstract text available
Text: SMA CHARACTERISTICS TEST / CHARACTERISTICS VALUES / REMARKS ELECTRICAL CHARACTERISTICS 50 Ω Impedance Frequency range DC - 18 GHz Typical V.S.W.R. • straight connector Frequency .085" .141" 2.6/50S 5/50S • right angle connector Typical insertion loss in dB
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6/50S
5/50S
5/50S
.141 SEMI-RIGID CABLE
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HALL 276
Abstract: 276 hall effect
Text: Model CLSM-50S Closed Loop Hall Effect Description The Model CLSM-50S is a closed loop Hall effect current sensor that accurately measures DC and AC currents and provides electrical isolation between the current carrying conductor and the output of the sensor.
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CLSM-50S
CLSM-50S
HALL 276
276 hall effect
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276 hall sensor
Abstract: No abstract text available
Text: Model CLSM-50S Closed Loop Hall Effect Description The Model CLSM-50S is a closed loop Hall effect current sensor that accurately measures DC and AC currents and provides electrical isolation between the current carrying conductor and the output of the sensor.
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CLSM-50S
CLSM-50S
276 hall sensor
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number DDMAM-50S Our Catalog Part Number: DDMAM-50S Our Global Manufacturing Part Number: 051537-0000 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*MA Product Datasheet General Wire Gauge Range AWG Mating Cycles Contact Arrangement
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DDMAM-50S
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DDMAE-50S
Abstract: No abstract text available
Text: Datasheet for part number DDMAE-50S Our Catalog Part Number: DDMAE-50S Our Global Manufacturing Part Number: 050913-0197 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*MA Product Datasheet General Wire Gauge Range AWG Mating Cycles Contact Arrangement
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DDMAE-50S
DDMAE-50S
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PDF
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Untitled
Abstract: No abstract text available
Text: Model CLSM-50S Closed Loop Hall Effect Description The Model CLSM-50S is a closed loop Hall effect current sensor that accurately measures DC and AC currents and provides electrical isolation between the current carrying conductor and the output of the sensor.
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CLSM-50S
CLSM-50S
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PDF
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Untitled
Abstract: No abstract text available
Text: Datasheet for part number DDMAE-50S-F0 Our Catalog Part Number: DDMAE-50S-F0 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*MA Product Datasheet General Wire Gauge Range AWG Mating Cycles Contact Arrangement Dielectric Withstanding Voltage
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DDMAE-50S-F0
DDMAE-50S-F0
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HF150-50S
Abstract: transistor 1346 2108 npn transistor 1346 transistor a/transistor 1346 datasheet of ic 555 ASI10613 transistor 495
Text: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM
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HF150-50S
HF150-50S
transistor 1346
2108 npn transistor
1346 transistor
a/transistor 1346
datasheet of ic 555
ASI10613
transistor 495
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transistor 1346 hfe
Abstract: No abstract text available
Text: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI HF150-50S is a 50 V epitaxial transistor designed for SSB communications. The device utilizes emitter ballastiong for ruggedness. PACKAGE STYLE .500 4L STUD A .112 x 45° FEATURES: A Ø .630 NOM
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HF150-50S
HF150-50S
transistor 1346 hfe
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DDMA50S
Abstract: DDMA-50S
Text: Datasheet for part number DDMA-50S Our Catalog Part Number: DDMA-50S Our Global Manufacturing Part Number: 050913-0002 Brand: Cannon Product Category: D Sub Product Line: D Sub Series: D*MA Product Datasheet General Wire Gauge Range AWG Mating Cycles Contact Arrangement
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DDMA-50S
DDMA-50S
DDMA50S
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HF75-50S
Abstract: TH513
Text: HF75-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The HF75-50S is 50 V Class AB NPN Power transistor, designed for SSB & VHF Communacations. PACKAGE STYLE .380” 4L STUD FEATURES INCLUDE: A .112x45° • Direct Replacement for TH513 • High Gain, 16 dB Typical @ 30 MHz
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HF75-50S
HF75-50S
112x45°
TH513
TH513
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datasheet of ic 555
Abstract: ASI10613 HF150-50S code 50s
Text: HF150-50S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .500 4L STUD A The ASI HF150-50S is Designed for .112 x 45° FEATURES: A Ø .630 NOM C • PG = 14 dB min. at 150 W/30 MHz • IMD3 = 100 dBc max. at 150 W (PEP) • Omnigold Metalization System
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HF150-50S
HF150-50S
ASI10613
datasheet of ic 555
ASI10613
code 50s
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50S-1887
Abstract: No abstract text available
Text: JFW Industries, Inc. Phone: 317-887-1340 [email protected] www.jfwindustries.com SPECIFICATION SHEET JFW MODEL 50S-1887 1P2T SOLID STATE RF SWITCH Frequency Range 225-400 MHz Configuration 1P2T Impedance 50 Ohms nominal VSWR 1.15:1 typical 1.30:1 maximum
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50S-1887
50S-1887
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Untitled
Abstract: No abstract text available
Text: JFW Industries, Inc. Phone: 317-887-1340 [email protected] www.jfwindustries.com SPECIFICATION SHEET JFW MODEL 50S-1721 1P4T SELF TERMINATING SOLID STATE RF SWITCH Frequency Range 0.5-18 GHz Configuration 1P4T Self Terminating Impedance 50 Ohms nominal
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50S-1721
4-18GHz
5-18GHz
8-18GHz
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Untitled
Abstract: No abstract text available
Text: JFW Industries, Inc. Phone: 317-887-1340 [email protected] www.jfwindustries.com SPECIFICATION SHEET JFW MODEL 50S-1584 1P16T SELF TERMINATING SOLID STATE RF SWITCH Frequency Range 20-4300 MHz Configuration 1P16T Self Terminating Impedance 50 Ohms nominal
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50S-1584
1P16T
20-1000MHz
1000-4300MHz
1000-3000MHz
3000-4300MHz
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121073-2229
Abstract: No abstract text available
Text: Datasheet for part number DD50S Our Catalog Part Number: DD-50S Our Global Manufacturing Part Number: 121073-2229 D Brand: Cannon Product Category: D Sub Product Line: D Sub Series: ORIGINAL D Product Datasheet General Wire Gauge Range AWG Mating Cycles Dielectric Withstanding Voltage
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DD50S
DD-50S
121073-2229
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2 A GLASS PASSIVATED BRIDGE RECTIFIER
Abstract: GBPC40 GBPC50 MARKING 50s
Text: GBPC40, 50S SERIES WTE POWER SEMICONDUCTORS 40, 50A GLASS PASSIVATED IN-LINE BRIDGE RECTIFIER Features ! Glass Passivated Die Construction ! ! ! ! ! ! Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Designed for Saving Mounting Space
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GBPC40,
E157705
MIL-STD-202,
2 A GLASS PASSIVATED BRIDGE RECTIFIER
GBPC40
GBPC50
MARKING 50s
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50S-1720
Abstract: No abstract text available
Text: JFW Industries, Inc. Phone: 317-887-1340 [email protected] www.jfwindustries.com SPECIFICATION SHEET JFW MODEL 50S-1720 1P2T SELF TERMINATING SOLID STATE RF SWITCH Frequency Range 0.5-18 GHz Configuration 1P2T Self Terminating Impedance 50 Ohms nominal
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50S-1720
4-18GHz
5-18GHz
8-18GHz
50S-1720
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50S-1722
Abstract: No abstract text available
Text: JFW Industries, Inc. Phone: 317-887-1340 [email protected] www.jfwindustries.com SPECIFICATION SHEET JFW MODEL 50S-1722 1P8T SELF TERMINATING SOLID STATE RF SWITCH Frequency Range 0.5-18 GHz Configuration 1P8T Self Terminating Impedance 50 Ohms nominal
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50S-1722
4-18GHz
5-18GHz
8-18GHz
50S-1722
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PDF
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR KBPC40, 50S SERIES 40, 50A IN-LINE BRIDGE RECTIFIER Data sheet 1303, Rev. Features Diffused Junction Low Forward Voltage Drop High Current Capability High Reliability High Surge Current Capability Ideal for Printed Circuit Boards
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KBPC40,
MIL-STD-202,
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BYW98-50S
Abstract: BYW98 9850s fast diode byw 98 200 BYW98-200S byw 68 byw 150 BYW 200
Text: BYW98-50S ~ BYW98-200S SUPER FAST RECOVERY DIODES PRV : 50 ~ 200 Volts Io : 3 Amperes D2A FEATURES : * * * * * * * High current capability High surge current capability High reliability Low reverse current Low forward voltage drop Fast switching for high efficiency
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BYW98-50S
BYW98-200S
UL94V-O
MIL-STD-202,
BYW98-50S
BYW98
9850s
fast diode byw 98 200
BYW98-200S
byw 68
byw 150
BYW 200
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100S
Abstract: 200S CF100 RESISTORS CF300 CF100
Text: 12.5 25 50 100 200 300 25S (50S) (100S) (200S) (300S) - 22 MEG OHM Unit : mm L E A D W IR E TYPE CF-12.5(CF -25S) CF-25(CF -50S) CF 50(CF 100S) CF-100(CF -200S) CF-200{CF -300S) k CF-300 L D H d 3.5 ±0.5 6.5 ±0.5 9.0 ±0.5 1.7 ±0.5 2.3±0.5 28(24) ± 1
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OCR Scan
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CF-12
CF-25
CF-100
-200S)
CF-200JCF
-300S)
CF-300
100S
200S
CF100 RESISTORS
CF300
CF100
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ixys ixfk 44n50
Abstract: DIODE SMD V05 1J04 5L46 IXFN48N50 IXfk 75 N 50 48N50 SMD-264
Text: nixYS IXFK 44N50/50S IXFK 48N50/50S IXFN 44N50 IXFN 48N50 D ^D S S ^D25 DS on IXFK/FN 44N50 500 V 44 A 0.12 Q. IXFK/FN 48N50 500 V 48 A 0.10 a HiPerFET Power MOSFET N-Channel Enhancement Mode T O -2 6 4 P a c k a g e s Avalanche Rated, High dv/dt, Low t (t < 250) ns
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OCR Scan
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44N50/50S
48N50/50S
44N50
48N50
48N50
ixys ixfk 44n50
DIODE SMD V05
1J04
5L46
IXFN48N50
IXfk 75 N 50
SMD-264
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