FMM5007VF
Abstract: 50W linear power amplifier
Text: FMM5007VF GaAs MMIC FEATURES • • • • • • High Output Power: 31.0dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5007VF is a MMIC amplifier designed for VSAT applications
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FMM5007VF
FMM5007VF
FCSI0598M200
50W linear power amplifier
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FMM5010
Abstract: FMM5010VF
Text: FMM5010VF GaAs MMIC FEATURES • • • • • High Output Power: 21.0dBm typ. High Linear Gain: 25dB (typ.) Low In/Out VSWR Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5010VF is a power amplifier designed for VSAT applications
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FMM5010VF
FMM5010VF
FCSI0598M200
FMM5010
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Untitled
Abstract: No abstract text available
Text: FMM5017VF GaAs MMIC FEATURES • • • • • • High Output Power: 29dBm typ. High Linear Gain: 20dB (typ.) Low In/Out VSWR Integrated Output Power Monitor Impedance Matched Zin/Zout = 50W Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5017VF is a MMIC amplifier designed for VSAT applications
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FMM5017VF
29dBm
FMM5017VF
FCSI0598M200
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50w transistor
Abstract: BFR193T BFR193TW
Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.
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BFR193T/BFR193TW
BFR193T
BFR193TW
D-74025
14-Feb-00
50w transistor
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BFR193T
Abstract: BFR193TW
Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.
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BFR193T/BFR193TW
BFR193T
BFR193TW
D-74025
14-Feb-00
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Untitled
Abstract: No abstract text available
Text: BFR193T/BFR193TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers.
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BFR193T/BFR193TW
BFR193T
BFR193TW
D-74025
21-Sep-99
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brf92
Abstract: BRF92A BFR92A sot-23 transistor p2 marking 211 ft 0473
Text: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW · · · · · Case: SOT-23, Molded Plastic Leads/Terminals: Solderable per MIL-STD-202,
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BFR92A
OT-23
OT-23,
MIL-STD-202,
800MHz
DS30031
500MHz
brf92
BRF92A
BFR92A
sot-23 transistor p2 marking
211 ft 0473
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BRF92
Abstract: BRF92A
Text: BFR92A NPN WIDEBAND TRANSISTOR Features • · · · · RF Wideband Amplifier/Oscillator 5GHz Transition Frequency Low Intermodulation Distortion High Power Gain Low Noise SOT-23 A C TOP VIEW Mechanical Data · · · · · C E B Case: SOT-23, Molded Plastic
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BFR92A
OT-23
OT-23,
MIL-STD-202,
500MHz
DS30031
BRF92
BRF92A
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Untitled
Abstract: No abstract text available
Text: Skyworks New and Featured Products David Seed Shuping Zhang MTTS 2014 Skyworks Solutions, Inc. Proprietary and Confidential Information Information 1 Skyworks At A Glance Skyworks Solutions is a Vertically Integrated provided of High Performance Analog and Mixed Signal Semiconductors Enabling Mobile Connectivity
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SKY85706-11
11n/ac
SKY73420-11
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FAGD1651132BA
Abstract: GD16511 GD16511-32BA STM-16
Text: 2.5 Gbit/s Limiting Amplifier GD16511 an Intel company Preliminary General Information GD16511 is a wide bandwidth, limiting amplifier designed for: u SDH STM-16 u SONET OC-48 optical communication systems. It features a linear gain of at least 28 dB and a 3 dB bandwidth larger than 3 GHz,
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GD16511
GD16511
STM-16
OC-48
FAGD1651132BA
GD16511-32BA
STM-16
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P1dB50
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0
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MGFC47A4450
MGFC47A4450
P1dB50
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Untitled
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0
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MGFC47A4450
MGFC47A4450
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MGFC47V5864
Abstract: 5.8 ghz transmitter
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47V5864 5.8~6.4GHz BAND 50W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit : millimeters 24+/-0.3 2MIN. The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ∼ 6.4GHz
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MGFC47V5864
MGFC47V5864
47dBm
June/2004
5.8 ghz transmitter
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50W 4 GHz linear power amplifier
Abstract: No abstract text available
Text: < C band internally matched power GaAs FET > MGFC47V5864 5.8 – 6.4 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 2 MIN. The MGFC47V5864 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.4
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MGFC47V5864
MGFC47V5864
50W 4 GHz linear power amplifier
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CC45T47K240G5C2
Abstract: Sumitomo 1295SA SA1515BX101M2HX5 SK04B102M11A6 GRP155F51A474ZDO2B PCB Rogers RO4003 substrate AVX0402YG104ZAT2A HIGH GAIN FET 1295SA Presidio Components CAP
Text: AMMC-5024 30KHz–40 GHz TWA Operational Guide Application Note 5359 Introduction Device Description This application note is an operational guide for Avago’s AMMC-5024 Traveling Wave Amplifier. The AMMC-5024 is a broadband PHEMT GaAs MMIC designed for medium output power 22.5dBm P1dB
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AMMC-5024
30KHz
AMMC-5024
40GHz
AV02-0704EN
CC45T47K240G5C2
Sumitomo 1295SA
SA1515BX101M2HX5
SK04B102M11A6
GRP155F51A474ZDO2B
PCB Rogers RO4003 substrate
AVX0402YG104ZAT2A
HIGH GAIN FET
1295SA
Presidio Components CAP
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Untitled
Abstract: No abstract text available
Text: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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TGA4509-EPU
0007-inch
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10KW
Abstract: TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier
Text: Advance Product Information January 23, 2003 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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TGA4509-EPU
0007-inch
10KW
TGA4509
TGA4509-EPU
50W 4 GHz linear power amplifier
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MGF4937
Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed
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H-CX587-R
KI-1311
MGF4937
MGFG5H1503
MGF4937AM
GD-32
MGFG5H1502
MGF0904
mgfc39v5964
MGF2430
MGF0909A
BA012J1
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RAYTHEON
Abstract: 50W 4 GHz linear power amplifier
Text: # 425430398 Description Features Absolute Ratings Electrical Characteristics1 RMPA2451-58 2.4-2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Raytheon RF Components’ RMPA2451-58 is a partially matched monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5 GHz ISM frequency band. The
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RMPA2451-58
RMPA2451-58
RAYTHEON
50W 4 GHz linear power amplifier
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Untitled
Abstract: No abstract text available
Text: < Ku band internally matched power GaN HEMT > MGFK47G3745 13.75 – 14.5 GHz BAND / 50W DESCRIPTION OUTLINE DRAWING The MGFK47G3745, GaN HEMT with an N-channel schottky gate, is designed for Ku-band applications. Unit : millimeters 21.0 +/-0.3 FEATURES 1
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MGFK47G3745
MGFK47G3745,
42dBm
CSTG-14952
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CGHV96100F1
Abstract: taconic
Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F1
50-ohm,
CGHV96100F1
CGHV96
100F1
taconic
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Untitled
Abstract: No abstract text available
Text: CGHV96100F1 100 W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT, Power Amplifier Cree’s CGHV96100F1 is a gallium nitride GaN High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison
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CGHV96100F1
50-ohm,
CGHV96100F1
CGHV96
100F1
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MGFC47A4450
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC47A4450 4.4~5.0GHz BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47A4450 device is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC47A4450
MGFC47A4450
47dBm
RG-10
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MGFC47V5864
Abstract: mitsubishi optical transmitter
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> R/IGFC47V5864 5.8~6.4G H z BAND 50W INTERNALLY MATCHED GaAs FET D E S C R IP TIO N OUTLINE DRAWING The MGFC47V5864 device is an internally impedance-matched GaAs power FET especially designed for use in 5.8 ~ 6.4GHz band amplifiers. The hermetically sealed metal-ceramic package
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MGFC47V5864
MGFC47V5864
47dBm
mitsubishi optical transmitter
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