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    51161 Search Results

    51161 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    88951-161LF Amphenol Communications Solutions Metral® Board Connectors, Backplane Connectors, 4 Row Signal Header, Straight, Solder-to-Board, Wide body. Visit Amphenol Communications Solutions
    131-5116-11H Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 5-Pair, 6 Column, Open Wall, Backplane Module, 1.5mm Wipe, APP. Visit Amphenol Communications Solutions
    88951-161PLF Amphenol Communications Solutions 4 Row Signal Header,24 position Straight, Solder-to-Board, Wide body Visit Amphenol Communications Solutions
    131-5116-11D Amphenol Communications Solutions Paladin® 112Gb/s Backplane Connector, 5-Pair, 6 Column, Open Wall, Backplane Module, 1.5mm Wipe, Nickel Sulfamate. Visit Amphenol Communications Solutions
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    51161 Price and Stock

    Nexperia BCP51-16,135

    TRANS PNP 45V 1A SOT223
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    DigiKey BCP51-16,135 Cut Tape 9,494 1
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    BCP51-16,135 Digi-Reel 9,494 1
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    BCP51-16,135 Reel 4,000 4,000
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    Bristol Electronics BCP51-16,135 4,000
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    Rochester Electronics BCP51-16,135 7,350 1
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    TME BCP51-16,135 1
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    Avnet Silica BCP51-16,135 40,000 10 Weeks 4,000
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    Carling Technologies LT-1511-610-012

    SWITCH TOGGLE SPST 15A 125V
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    DigiKey LT-1511-610-012 Box 2,184 1
    • 1 $17.75
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    Mouser Electronics LT-1511-610-012 222
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    Newark LT-1511-610-012 Bulk 13 1
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    Master Electronics LT-1511-610-012 2,990
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    Sager LT-1511-610-012 1
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    Amphenol Communications Solutions 88951-161LF

    CONN HEADER 24POS PCB
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    DigiKey 88951-161LF Tube 1,880 1
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    Molex 2219551161

    IGRID R-R 16CKT 100MM DISC SN
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    DigiKey 2219551161 Bulk 500 1
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    Molex 2155116121

    6.0MM 2 CKT PNL MNT RECEPT
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    DigiKey 2155116121 Bag 469 1
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    Avnet Americas 2155116121 Bulk 13 Weeks, 3 Days 1
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    51161 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    51161-2-4037 ebm-papst Fans, Thermal Management - Fans - Accessories - WALL RING 154MM "V" FOR M4Q SER Original PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    5116160 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    51161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E LIC PRELIMINARY INFORMATION 51161024 6 4 K x 16 STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are


    OCR Scan     		PDF V61C51161024 44-pin 576-bit

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 1M x 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 P re lim in a ry In fo rm a tio n • 1 048 576 w o rd s by 16-bit o rg a n iz a tio n m ax. 4 9 5 a ctive m W ( H Y B 3 1 1 6 1 6 5 B S J -6 0 )


    OCR Scan     		PDF 16-Bit Y//77777/

    Untitled

    Abstract: No abstract text available
    Text: M OSEL V I T E L I C PRELIMINARY V 6 1 C 5 1 161024 6 4 K x 16 H IG H S P E E D S T A T IC R A M Features Description • ■ ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are


    OCR Scan     		PDF 576-bit 44-pin

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI 5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H 5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    Untitled

    Abstract: No abstract text available
    Text: ^ e m Z M Ö 00EÖSÖ3 444 TOSHIBA 5116100BSJ-60/70 PRELIMINARY 16,777,216 WORD X 1 BIT DYNAMIC RAM u> "c s Description TheTC 5116100BS J is the new generation dynamic RAM organized 16,777,216 word by 1 bit. TheTC 5116100BS J utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		PDF TC5116100BSJ-60/70 5116100BS 51161OOBSJ 300mil)

    Untitled

    Abstract: No abstract text available
    Text: b l E D • 4 ^ i , 2 0 3 H M 5116100 S e r i e s - 0 0 2 3 3 2 b O i l ■ H I T S HITACHI/ «-o ì i c / arrays / be * 16,777,216-w ord x 1 -b it D yn a m ic R andom A c c e s s M em ory The H itachi H M 5116100 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It


    OCR Scan     		PDF 216-w HM5116100J-6 HM5116100J-7 HM5116100J-8 400-mil 24/28-pin CP-24DA) HM5116100Z-6 HM51161002-7 HM5116100Z-8

    Untitled

    Abstract: No abstract text available
    Text: HY «H Y U N D A I 5116160 Series 1M X 16-bit CMOS DRAM with 2CAS DESCRIPTION The 5116160 is the new generation and fast dynamic RAM organized 1,048,576 x 16-bit. The 5116160 utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


    OCR Scan     		PDF 16-bit HY5116160 16-bit. HY5116160 1AD11-10-MAY95 HY5116160JC HY5116160SLJC HY5116160TC

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 16 M X 1-Bit Dynamic RAM HYB 5116100AJ-50/-60/-70/-80 HYB 5116100ASJ-50/-60/-70/-80 Advanced Inform ation • 16 777 216 words by 1-bit organization • 0 to 70 "C operating temperature • Fast access and cycle time RAS access time: 50 ns -50 version


    OCR Scan     		PDF 5116100AJ-50/-60/-70/-80 5116100ASJ-50/-60/-70/-80 B235b05 00S53T7

    Untitled

    Abstract: No abstract text available
    Text: blE J> m 44Tb203 Ü023MSS aTO • HITE 5116101 Series — hitachi/ logic/arrays/mem 16,777,216-Word x 1-Bit Dynamic Random Access Memory The H itachi H M 5116101 is a CMOS dynamic RAM organized 16,777,216 words x 1 bit. It employs the most advanced CMOS technology for


    OCR Scan     		PDF 44Tb203 023MSS HM5116101 216-Word HM5I1610I HM5116101J-8 400-mil 24/28-pin CP-24DA)

    E34C

    Abstract: No abstract text available
    Text: b l E I> • 0 0 2 3 4 8 0 T5b « H I T 2 H M 5116102 S e r ie s Preliminary 16,777,216-word x 1-bit Dynamic Random Access Memory HITACHI/ LOGIC/ARRAYS/MEM The H M 5116102 is a CM OS dyn am ic RAM organized 16,777,216 words x 1-bit. It employs the most advanced CMOS technology for high


    OCR Scan     		PDF HM5116102 216-word HM5116102J-8 400-mil 24/28-pin CP-24DA) TTP-24D) HM511 0Q23SDb E34C

    Untitled

    Abstract: No abstract text available
    Text: H M 5 1 1 6 1 0 0 L S e r i e s LowPower Version Product Preview 16,777,216-Word x 1-Bit Dynamic Random A c c e s s Memory • DESCRIPTION H M 5116100L J Series The Hitachi HM 5116100 is a C M O S dynamic RAM organized 16,777,216 words x 1-bit. It employs the most advanced C M O S technology lor high performance and


    OCR Scan     		PDF 216-Word 5116100L HM5116100L

    intel 82c51

    Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288
    Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K 5116160A H PD 4216160


    OCR Scan     		PDF 51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288

    ns 415

    Abstract: No abstract text available
    Text: O K I Semiconductor 5116170 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116170 is a 1,048,576-word x 16-bit dynam ic RA M fabricated in OKI's CM O S silicon gate technology. The M SM 5116170 achieves high integration, high-speed operation, and low -pow er


    OCR Scan     		PDF MSM5116170 576-Word 16-Bit 42-pin ns 415

    5116 RAM

    Abstract: bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60
    Text: SIEM EN S HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 1M X 16-Bit Dynamic RAM 1k & 4k Refresh Hyper Page Mode - EDO Preliminary Inform ation max. 495 active mW ( HYB3116165BSJ-60) max. 440 active mW ( HYB3116165BSJ-70) 11 mW standby (TTL) 5.5 mW standby (MOS)


    OCR Scan     		PDF 16-Bit 5116165BSJ 5118165BSJ HYB3118165BSJ-50) HYB3118165BSJ-60) I/01-I/016 16-EDO 777777yà 5116 RAM bsj7 siemens fog mug 14 431 TNC 24 mk 2 HYB3116165BSJ-50 HYB3116165BSJ-60 HYB3116165BSJ-70 HYB3118165BSJ-50 HYB3118165BSJ-60

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M x 16-Bit Dynamic RAM 1k & 4k-Refresh Hyper Page Mode- EDO HYB 5116165BSJ -50/-60/-70 HYB 5118165BSJ -50/-60/-70 Advanced Information • 1 048 576 words by 16-bit organization • 0 to 70 "C operating temperature • Performance: ÍRA C RAS access time


    OCR Scan     		PDF 16-Bit 5116165BSJ 5118165BSJ 5118165BSJ-50) 5118165BSJ-60) 5118165BSJ-7EDO E35hQ5 165BSJ-50/-60/-70 16-EDO

    Untitled

    Abstract: No abstract text available
    Text: 5116165A Series Preliminary 1,048,576-word x 16-btt Dynamic Random Access Memory Rev. 0.0 Jul. 20.1994 HITACHI T be H itachi HM 5116165A is a CMOS dynamic R A M organized 1,048.576 w ords x 16 bits. It employs the most advanced CMOS technology for h ig h p e rfo rm a n c e an d low p o w e r.


    OCR Scan     		PDF HM5116165A 576-word 16-btt 116165A mW/495 mW/440 5116165AJ

    Untitled

    Abstract: No abstract text available
    Text: Preliminary H M 5 1 1 6 1 6 0 A / A L S e r ie s 1,048,576-word x 16-bit Dynamic Random Access Memory The H ita ch i H M 5116160A /A L is a CM O S dynamic RA M organized 1,048,576 words x 16 b its. It em ploys the most advanced CM O S technology for high performance and low power.


    OCR Scan     		PDF 576-word 16-bit 116160A HM5116160A/AL mW/495 mW/440mW HMS116160A/AL

    HY5116100B

    Abstract: 1AD41-00-MAY95 HY5116100
    Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide


    OCR Scan     		PDF HY5116100B 16Mx1 HY5116100Bis TheHY5116100B 4b750Ã 300435b 1AD41-00-MAY9S HY5116100BJ 1AD41-00-MAY95 HY5116100

    A9HA

    Abstract: SA11
    Text: O K I Semiconductor MSM5 1 16100 _ 16,777,216-Word x 1-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 5116100 is a new generation dynamic organized as 16,777,216 w ord x 1-bit. The technology used to fabricate the M SM 5116100 is OKI's CMOS silicon gate process technology.


    OCR Scan     		PDF MSM5116100_ 216-Word MSM5116100 cycles/64ms b72M2MD MSM5116100 A0-A11 b724240 A9HA SA11

    Untitled

    Abstract: No abstract text available
    Text: 5116100 Series 16,777,216-word x 1-bit Dynamic RAM HITACHI ADE-203-646D Z Rev. 4.0 Jun. 24, 1997 Description The Hitachi HM 5116100 is a CMOS dynamic RAM organized 16,777,216-word x 1-bit. It employs the most advanced 0.5 |im CMOS technology for high performance and low power. The 5116100 offers


    OCR Scan     		PDF HM5116100 216-word ADE-203-646D 26-pin ns/70 mW/385

    Untitled

    Abstract: No abstract text available
    Text: M O S E L V IT E L IC PRELIMINARY 51161024 6 4 K x 16 STATIC RAM Features Description • ■ ■ ■ ■ The V 61C 51161024 is a 1,048,576-bit static random -access memory organized as 65,536 words by 16 bits. Inputs and three-state outputs are TTL compatible and allow for direct interfacing with


    OCR Scan     		PDF V61C51161024 576-bit 44-pin

    Untitled

    Abstract: No abstract text available
    Text: ADE-203-178B Z 5116100A Series 16,777,216-word x 1-bit Dynamic Random Access Memory H IT A C H I Nov2r 99: The Hitachi H M 5116100A is a CMOS dynamic R A M o rg an ized 1 6 ,7 7 7 ,2 1 6 -w o rd x 1-bit. It employs the most advanced CMOS technology for


    OCR Scan     		PDF ADE-203-178B HM5116100A 216-word 116100A 5116100AS-6 5116100AS-7 5116100AS-8 HM5116100ATS-6 5116100ATS-7

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 1M X 16-Bit Dynamic RAM 4k-Refresh HYB 5116160BSJ-50/-60/-70 A d v a n c e d In fo rm a tio n • 1 0 4 8 576 w o rd s by 16-bit o rg a n iz a tio n Low p o w e r d issip a tio n • 0 to 70 C o p e ra tin g te m p e ra tu re m ax. 550 a ctive m W (-50 ve rsio n )


    OCR Scan     		PDF 16-Bit 5116160BSJ-50/-60/-70

    Untitled

    Abstract: No abstract text available
    Text: H M 5116100 S e r ie s - Preliminary 16,777,216-Word x 1-Bit Dynamic Random A c ce s s Memory • DESCRIPTION H M 5U 6100J Series T h e H itachi H M 5 1 16 10 0 is a C M O S dyn am ic R A M org an ized 16,777,216-w ord x 1-bit. It em ploys the m ost a d v a n ce d C M O S technolog y for high perform a n ce and


    OCR Scan     		PDF HM5116100 216-Word 216-w 6100J