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    5116400B Search Results

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    5116400B Price and Stock

    Toshiba America Electronic Components TC5116400BSJ-60

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    Bristol Electronics TC5116400BSJ-60 89
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    Hitachi Ltd HM5116400BTS6

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    Bristol Electronics HM5116400BTS6 41
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    Siemens HYB5116400BJ-60

    Electronic Component
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    ComSIT USA HYB5116400BJ-60 1,768
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    Siemens HYB5116400BJ60

    4M X 4-BIT DYNAMIC RAM 4K REFRESH (FAST PAGE MODE) Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24
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    ComSIT USA HYB5116400BJ60 8
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    Others TC5116400BSJ-60

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    Chip 1 Exchange TC5116400BSJ-60 30
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    5116400B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    WCs MARKING

    Abstract: SMD MARKING code ASC SMD MARKING CODE RAC 5117400
    Text: 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Fast Page Mode operation


    Original     		PDF 5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 WCs MARKING SMD MARKING code ASC SMD MARKING CODE RAC 5117400

    Q67100-Q1049

    Abstract: Q67100-Q1050 Q67100-Q1051
    Text: 4M x 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • • • • • • • • • • • 4 194 304 words by 4-bit organization 0 to 70 ˚C operating temperature Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time


    Original     		PDF 5116400BJ 5116400BJ-50/-60/-70 GPJ05628 P-SOJ-26/24 Q67100-Q1049 Q67100-Q1050 Q67100-Q1051

    HYB5116400BJ

    Abstract: HYB5116400BT
    Text: 4M x 4-Bit Dynamic RAM 5116400BJ -50/-60/-70 5116400BT -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature • Performance: -50 -60 -70 tRAC RAS access time 50 60 70 ns tCAC CAS access time


    Original     		PDF HYB5116400BJ HYB5116400BT 5116400BJ/BT-50/-60/-70 P-SOJ-26/24 GPJ05628 GPX05857

    q207

    Abstract: 74ABT244
    Text: 4M x 72-Bit Dynamic RAM Module ECC - Module HYM 724000GS-50/-60 HYM 724010GS-50/-60 Preliminary Information • 4 194 304 words by 72-bit ECC - mode organization • Fast access and cycle time 50 ns access time 90 ns cycle time (-50 version) 60 ns access time


    Original     		PDF 72-Bit 724000GS-50/-60 724010GS-50/-60 HYM724000/10GS-50/-60 L-DIM-168-6 4Mx72 DM168-6 q207 74ABT244

    HYB3116400

    Abstract: HYB3117400 HYB5116400 HYB5117400
    Text: 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode 5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ(L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


    Original     		PDF HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ HYB3117400BJ HYB5116400 HYB3116400 HYB5117400 HYB31 HYB5116 400BJ-50/-60 HYB3116400 HYB3117400 HYB5116400 HYB5117400

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 ”C operating temperature • Performance: -50 -60 -70 ÍRAC R A S access time 50 60 70 *CAC C A S access time 13 15 20


    OCR Scan     		PDF 5116400BJ 5116400BJ-50/-60/-70 P-SOJ-26/24

    bt60

    Abstract: siemens im 304 Q1050
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • 4 194 304 words by 4-bit organization • 0 to 70 C operating tem perature • Fast access and cycle time RAS access time: 50 ns -50 version 60 ns (-60 version)


    OCR Scan     		PDF 5116400BJ 5116400BT bt60 siemens im 304 Q1050

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 "C operating temperature • Performance: -50 -60 -70 50 60 70 ns ns Í rac RAS access time fcAC CAS access time 13 15 20 tpA


    OCR Scan     		PDF 5116400BJ QG0hb33 5116400BJ-50/-60/-70

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS 4M X 4-Bit Dynamic RAM HYB 5116400BJ -50/-60/-70 HYB 5116400BT -50/-60/-70 Advanced Inform ation • • • • • 4 194 304 w ords by 4-bit organization 0 to 70 'C operating tem perature Fast access and cycle time RAS access time: 50 ns -50 version


    OCR Scan     		PDF 5116400BJ 5116400BT

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY5117400B ,H Y 5116400B 4Mx4, Fast Page mode DESCRIPTION This fam ily is a 16M bit dynam ic RAM organized 4,194,304 x 4 -bit configuration w ith Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mode which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117400B 5116400B

    bt 33 f

    Abstract: No abstract text available
    Text: SIEM EN S 4M x 4-Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode HYB 5116400BJ-50/-60 HYB 5117400BJ-50/-60 HYB 3116400BJ/BT-50/-60 HYB 3117400BJ-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature •


    OCR Scan     		PDF 5116400BJ-50/-60 5117400BJ-50/-60 3116400BJ/BT-50/-60 3117400BJ-50/-60 400BJ-50/-60 400BJ/BT-50/-60 P-TSOPII-26/24-1 GPX05857 bt 33 f

    51w4260

    Abstract: 51W4265C HM 338 262144-WORD
    Text: Contents • L in e U p o f H ita c h i IC M e m o rie s . 7 • P a c k a g e In f o rm a tio n s .


    OCR Scan     		PDF HM5283206 131072-word 32-bit HM530281R 331776-word HM538253B/ 262144-word HM538254B HM538123B 51w4260 51W4265C HM 338

    27C256AG

    Abstract: 671400H 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A
    Text: Line Up o f Hitachi IC M emories Classification Total bit 4M - SRAM- 3 .3 V r — 1M- Voltage Organization word X bit Type 512kx8- 5V - 512k x 8 - n H M 62W 8512A Series 121 H M 628512A Series - 133 H M 628512 S e r ie s . 145 — 1M x4- H M 674100H Series


    OCR Scan     		PDF 512kx8512k 28512A 674100H 671400H 8128B 1664H 9127H 8127H 27C256AG 4265C 514270 101AG BK 4367 4165A 5118160 4270-D 4096A

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70


    OCR Scan     		PDF P-SOJ-26/20-5

    Untitled

    Abstract: No abstract text available
    Text: 5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi 5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 5116400B offers Fast Page Mode


    OCR Scan     		PDF HM5116400B 304-word ADE-203-367A 440mW/385 mW/358

    Untitled

    Abstract: No abstract text available
    Text: SIEM ENS Summary of Types Summary of Types Type Ordering Code Package Description DRAM Pa Memory Components HYB 5 1 1000BJ-50 Q67100-Q1056 P-SOJ-26/20-1 300 mil 1 M X 1, 50 ns 33 HYB 5 1 1000BJ-60 Q67100-Q518 P-SOJ-26/20-1 300 mil 1 M X 1, 60 ns 33 HYB 5 1 1000BJ-70


    OCR Scan     		PDF 1000BJ-50 1000BJ-60 1000BJ-70 1000BJL-50 1000BJL-60 1000BJL-70 514256B-50 514256B-60 514256B-70 514256BJ-50

    HY5116400BT

    Abstract: No abstract text available
    Text: -HYUNDAI • HY5117400B, 5116400B 4Mx4, F ait Page mode DESCRIPTION This family is a 16M bit dynamic RAM organized 4,194,304 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode is a kind of page mods which is useful for the read operation. The circuit and process design allow this


    OCR Scan     		PDF HY5117400B, HY5116400B A0-A11) HY5116400BT

    Untitled

    Abstract: No abstract text available
    Text: S IE M E N S 4M x 4 - Bit Dynamic RAM 2k & 4k Refresh Fast Page Mode 5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ(L)/BT(L)-50/-60 HYB3117400BJ( L)/BT(L)-50/-60 Advanced Information • 4 194 304 words by 4-bit organization • 0 to 70 °C operating temperature


    OCR Scan     		PDF HYB5116400BJ/BT-50/-60 HYB5117400BJ/BT-50/-60 HYB3116400BJ HYB3117400BJ( HYB5116400 HYB3116400 HYB5117400 HYB3117400 12/1AM P-SOJ-26/24

    Untitled

    Abstract: No abstract text available
    Text: 5116400B Series 4,194,304-word x 4-bit Dynamic Random Access Memory HITACHI ADE-203-367A Z Rev. 1.0 Nov. 2, 1995 Description The Hitachi 5116400B is a CMOS dynamic RAM organized 4,194,304-word x 4-bit. It employs the most advanced CMOS technology for high performance and low power. The 5116400B offers Fast Page Mode


    OCR Scan     		PDF HM5116400B 304-word ADE-203-367A mW/385 mW/358 HM511640OB

    BT 804

    Abstract: No abstract text available
    Text: SIEMENS Contents Page In tro d u c tio n .9 Sum m ary o f T ypes incl. ordering codes . 13


    OCR Scan     		PDF 32-Bit B166-H6993-X-7600, BT 804

    Untitled

    Abstract: No abstract text available
    Text: HB56T432D Series 4,194,304-word x 32-bit High Density Dynamic RAM Module HITACHI ADE-203Rev. 0.0 Dec. 1, 1995 Description The HB56T432D is a 4 M x 32 dynamic RAM Small Outline DIMM S.O.DIMM , mounted 8 pieces of 16Mbit DRAM (5116400BTS/ BLTS) sealed in TSOP package. An outline of the HB56T432D is 72-pin


    OCR Scan     		PDF HB56T432D 304-word 32-bit ADE-203Rev. 16Mbit HM5116400BTS/ 72-pin

    eprom 2904

    Abstract: 4502 C DRAM 64kx16
    Text: Line Up of Hitachi IC Memories C la s s ific a tio n T o ta l b it 4M - S R AM - H O r g a n iz a tio n w o r d x b it V o lta g e Type 3 .3 V - 512k x 8 - HM62W8512A Series 121 5V — 512k x 8 - HM628512A Series - 133 HM628512 S e r ie s . 145 r —


    OCR Scan     		PDF 128kx8n 128kX 128kx8Type HM62W8512A HM628512A HM628512 HM674100H HM671400H HM62V8128B HM62V8128 eprom 2904 4502 C DRAM 64kx16

    Untitled

    Abstract: No abstract text available
    Text: 5116400B / NN5117400B series Fast Page Mode CMOS 4M x 4bit Dynamic RAM NPN a DESCRIPTION The 5116400B / NN5117400B series is a high performance CMOS Dynamic Random Access Memory organized as 4,194,304 words by 4 bits. The 5116400B / NN5117400B series is fabricated with advanced CMOS technology and de­


    OCR Scan     		PDF NN5116400B NN5117400B

    3165805AT-60

    Abstract: Q67100
    Text: SIEMENS Summary of Types in Alphanumerical Order Summary of Types in Alphanumerical Order Ordering Code Page HYB 3116160BSJ-50 on request 618 HYB 311616QBSJ-60 on request 618 HYB 3116160BSJ-70 on request 618 HYB 3116160BST-50 on request 618 HYB 3116160BST-60


    OCR Scan     		PDF 3116160BSJ-50 311616QBSJ-60 3116160BSJ-70 3116160BST-50 3116160BST-60 3116160BST-70 3116165BSJ-50 3116165BSJ-60 3116165BSJ-70 3116165BST-50 3165805AT-60 Q67100