INF8594E
Abstract: INF8594E-2
Text: ICs for TV-SETS INF8594E 512 x 8-Bit CMOS EEPROM with I2C-Bus Interface The INF8594E-2 is a 4-Kbit 512 x 8-bit floating gate electrically erasable programmable read only memory (EEPROM). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically
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INF8594E
INF8594E-2
INF8594E
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x2004
Abstract: XICOR x2004 X20C04
Text: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to
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X20C04
X20C04
x2004
XICOR x2004
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XICOR x2004
Abstract: X2004 X20C04
Text: X20C04 X20C04 4K 512 x 8 Bit Nonvolatile Static RAM FEATURES DESCRIPTION • The Xicor X20C04 is a 512 x 8 NOVRAM featuring a static RAM overlaid bit-for-bit with a nonvolatile electrically erasable PROM E2PROM . The X20C04 is fabricated with advanced CMOS floating gate technology to
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X20C04
X20C04
XICOR x2004
X2004
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X24C04
Abstract: X24C16 X4043 X24C04-2
Text: Recommended System Management Alternative: X4043 X24C04 4K 512 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply versions • Low power CMOS —Active read current less than 1 mA —Active write current less than 1.5 mA • Internally organized 512 x 8
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X4043
X24C04
400kHz
X24C04
X24C16
X4043
X24C04-2
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CompactCellTM Static RAM
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
limitation02
CompactCellTM Static RAM
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
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93C76
Abstract: 200B 93C86 BSY29
Text: 93C76/86 8K/16K 5.0V CMOS Serial EEPROM FEATURES PIN CONFIGURATION • Single 5.0V supply • Low power CMOS technology - 1 mA active current typical • ORG pin selectable memory configuration 1024 x 8 or 512 x 16 bit organization 93C76 2048 x 8 or 1024 x 16 bit organization (93C86)
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93C76/86
8K/16K
93C76)
93C86)
93C76/86n
DS21132A-page
93C76
200B
93C86
BSY29
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am45DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Pseudo Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL6408G
16-Bit)
8-Bit/512
73-Ball
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X24C04 DATASHEET
Abstract: X24C04 X4043
Text: Recommended System Management Alternative: X4043 X24C04 4K 512 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V power supply versions • Low power CMOS —Active read current less than 1 mA —Active write current less than 1.5 mA • Internally organized 512 x 8
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X4043
X24C04
400kHz
X24C04
X24C04 DATASHEET
X4043
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Untitled
Abstract: No abstract text available
Text: Recommended System Management Alternative: X4043 X24C04 4K 512 x 8 Bit Serial EEPROM DESCRIPTION • 2.7V to 5.5V Power Supply Versions • Low Power CMOS —Active read current less than 1 mA —Active write current less than 1.5 mA • Internally Organized 512 x 8
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X4043
X24C04
400Khz
X24C04
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KKF8594E
Abstract: No abstract text available
Text: TECHNICAL DATA KKF8594E 512 x 8-bit CMOS EEPROMS with I2Cbus Interface The KKF8594E is а 4-Kbit 512 х 8-bit floating gate electrically erasable programmable read only memory (ЕЕРPROM). By using an internal redundant storage code it is fault tolerant to single bit errors. This feature dramatically
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KKF8594E
KKF8594E
001BA)
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NG WH 115
Abstract: No abstract text available
Text: PRELIMINARY Am41DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL6408G
16-Bit)
8-Bit/512
Flash/55
73-Ball
Am29DL640G
DQ15/A-1
NG WH 115
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M41000000G
Abstract: AMD K7 data sheet
Text: PRELIMINARY Am41DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL6408G
16-Bit)
8-Bit/512
73-Ball
FLB073--73-Ball
M41000000G
AMD K7 data sheet
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Untitled
Abstract: No abstract text available
Text: Recommend System Management Alternative: X5043 X25040 4K 512 x 8 Bit SPI Serial EEPROM with Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 512 X 8 bits —16-byte page mode • Low power CMOS —10µA standby current
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X5043
X25040
--16-byte
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am41DL6408G Stacked Multi-Chip Package MCP Flash Memory and SRAM 64 Megabit (8 M x 8-Bit/4 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL6408G
16-Bit)
8-Bit/512
73-Ball
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY Am45DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL32x8G
16-Bit)
8-Bit/512
73-Ball
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M450000008
Abstract: No abstract text available
Text: PRELIMINARY Am45DL3208G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL3208G
16-Bit)
8-Bit/512
73-Ball
M450000008
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sck 084
Abstract: X25040 X5043
Text: Recommend System Management Alternative: X5043 X25040 4K 512 x 8 Bit SPI Serial EEPROM with Block Lock Protection DESCRIPTION • 2MHz clock rate • SPI modes 0,0 & 1,1 • 512 X 8 bits —16-byte page mode • Low power CMOS —10µA standby current
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X5043
X25040
--16-byte
X25040
4096-bit
sck 084
X5043
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M45000001D
Abstract: DL322 DL323 DL324
Text: PRELIMINARY Am45DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) CompactCellTM Static RAM DISTINCTIVE CHARACTERISTICS
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Am45DL32x8G
16-Bit)
8-Bit/512
73-Ball
M45000001D
DL322
DL323
DL324
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8 pin diagram 25032
Abstract: DS42585 pin diagram 25032 internal diagram 25032
Text: PRELIMINARY DS42585 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL324D Bottom Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS
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DS42585
Am29DL324D
16-Bit)
8-Bit/512
73-Ball
FLB073--73-Ball
8 pin diagram 25032
DS42585
pin diagram 25032
internal diagram 25032
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DL322
Abstract: DL323 DL324
Text: PRELIMINARY Am41DL32x8G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 8 Mbit (1 M x 8-Bit/512 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features
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Am41DL32x8G
16-Bit)
8-Bit/512
73-Ball
FLB073--73-Ball
DL322
DL323
DL324
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Untitled
Abstract: No abstract text available
Text: SEC fiPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /iPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM organized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power
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fiPD28C04
/iPD28C04
096-bit
24-Pin
/aPD28C04
/xPD28C04
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nec d28c04
Abstract: No abstract text available
Text: NEC #|PD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The /jPD28C04 is a 4,096-bit electrically erasable and programmable read-only memory EEPROM orga nized as 512 x 8 bits and fabricated with an advanced CMOS process for high performance and low power
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uPD28C04
096-bit
/UPD28C04
24-pin
PD28C04
pPD28C04
/iPD28C04
pPD28C04
nec d28c04
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6023B
Abstract: PD28C04 ho27a
Text: NEC JJPD28C04 512 X 8-Bit CMOS EEPROM NEC Electronics Inc. Description Pin Configuration The ¿jPD28C04 is a 4,096-bit e le ctrica lly erasable and program m able read-only m em ory EEPROM orga nized as 512 x 8 bits and fab ricated w ith an advanced CMOS process for high perform ance and low power
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uPD28C04
24-Pin
jPD28C04
096-bit
D28C04
pPD28C04
6023B
PD28C04
ho27a
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