K4S511632D
Abstract: No abstract text available
Text: K4S511632D CMOS SDRAM DDP 512Mbit SDRAM 8M x 16bit x 4 Banks Synchronous DRAM LVTTL Revision 0.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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K4S511632D
512Mbit
16bit
K4S511632D
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Untitled
Abstract: No abstract text available
Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit DDR SDRAM 8M x 16bit x 4 Banks DDR SDRAM Specification Revision 1.0 July. 2002 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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512Mb
512Mbit
16bit
31/VREF-0
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MD4832-D512-V3Q18-X-P
Abstract: md4832d512v3q MD4811-D512-V3Q18-X dragonball mx1 Diskonchip QUALCOMM Reference manual AD12 AD14 PR31700 MD4331-d1G-V3Q18-X-P
Text: Mobile DiskOnChip G3 512Mbit/1Gbit Flash Disk with MLC NAND and M-Systems’ x2 Technology Preliminary Data Sheet, June 2003 Highlights Mobile DiskOnChip G3 is one of the industry’s most efficient storage solutions, using Toshiba’s 0.13 µm Multi-Level Cell MLC
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512Mbit/1Gbit
91-SR-011-05-8L
MD4832-D512-V3Q18-X-P
md4832d512v3q
MD4811-D512-V3Q18-X
dragonball mx1
Diskonchip
QUALCOMM Reference manual
AD12
AD14
PR31700
MD4331-d1G-V3Q18-X-P
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OTB-400-1
Abstract: No abstract text available
Text: MEMORY MODULE SDRam 64Mx48-SOP 3DSD2G64VB4488 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 32Mx64, based on 32Mx16 Pin Assignment Top View BGA 119 (8x15 - Pitch : 1.27mm) Features - Stack of four 512Mbit SDRam. - Organized as 32Mx64bit. - Single +3.3V power supply.
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64Mx48-SOP
3DSD2G64VB4488
32Mx64,
32Mx16
512Mbit
32Mx64bit.
3DFP-0488-REV
OTB-400-1
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE SDRAM 32Mx64-BGA DATA SHEET SYNCHRONOUS DRAM MODULE 3DSD2G64VB4383 2-Gbit SDRAM organized as 32Mx64, based on 32Mx16 Features - Stack of four 512Mbit SDRAM. - Organized as 32Mx64bit. - High frequency: 133Mhz - Single +3.3V power supply. - Fully synchronous; all signals registered on
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32Mx64-BGA
3DSD2G64VB4383
32Mx64,
32Mx16
512Mbit
32Mx64bit.
133Mhz
3DDS-0383-2
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3DSD2G16VS4364
Abstract: 3D-PLUS
Text: MEMORY MODULE SDRAM 128Mx16-SOP 3D SD2G16VS4364 Synchronous Dynamic Ram MODULE 2Gbit SDRAM organized as 2128Mx16, based on 128Mx4 Pin Assignment Top View SOP 54 (Pitch : 0.80 mm) Features - Stack of four 512Mbit SDRam. - Organized as 128Mx16-bit. - Single +3.3 power supply.
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128Mx16-SOP
SD2G16VS4364
2128Mx16,
128Mx4
512Mbit
128Mx16-bit.
3DSD2G16VS4364
3DFP-0364-REV
3DSD2G16VS4364
3D-PLUS
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k4h510838d
Abstract: No abstract text available
Text: 512Mb x16, DDP DDR SDRAM DDP 512Mbit SDRAM 32M x 16bit x 4 Banks DDR SDRAM Specification Revision 0.0 Apr. 2002 This is to advise Samsung customers that, until August 1, 2003, in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as
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512Mb
512Mbit
16bit
31/VREF-0
k4h510838d
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HYB25L512160AC
Abstract: HYE25L512160AC
Text: Data Sheet, Rev. 1.3, April 2004 HYB25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g . The information in this document is subject to change without notice. Edition 2004-04
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HYB25L512160AC
512MBit
10212003-BSPE-77OL
P-TFBGA-54-2
MO207G
FBGA-54
HYE25L512160AC
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timing controller SHART
Abstract: T21N K4U52324Q SAMSUNG GDDR4 K4U52324QE-BC09 GDDR4
Text: 512M GDDR4 SGRAM K4U52324QE 512Mbit GDDR4 SGRAM 2M x 32Bit x 8 Banks Graphic Double Data Rate 4 Synchronous DRAM with Uni-directional Data Strobe and DLL 136Ball FBGA Revision 1.0 June 2006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,
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K4U52324QE
512Mbit
32Bit
136Ball
timing controller SHART
T21N
K4U52324Q
SAMSUNG GDDR4
K4U52324QE-BC09
GDDR4
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Untitled
Abstract: No abstract text available
Text: K4S510832B CMOS SDRAM DDP 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL Revision 0.2 April 2001 This is to advise Samsung customers that in accordance with certain terms of an agreement, Samsung is prohibited from selling any DRAM products configured in "Multi-Die Plastic" format for use as components in general and scientific computers, such as mainframes, servers,
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K4S510832B
512Mbit
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Untitled
Abstract: No abstract text available
Text: K4Y50164UC K4Y50084UC K4Y50044UC K4Y50024UC XDRTM DRAM TM 512Mbit XDR DRAM C-die Revision 1.0 December 2005 INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4Y50164UC
K4Y50084UC
K4Y50044UC
K4Y50024UC
512Mbit
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HY27USXX121M
Abstract: package tsop1 512MBIT hynix nand HY27US HY27 HY27SSXX121M
Text: HY27SS 08/16 121M Series HY27US(08/16)121M Series 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Document Title 512Mbit (64Mx8bit / 32Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 Initial Draft Sep.17.2003 Preliminary 0.1 Renewal Product Group
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HY27SS
HY27US
512Mbit
64Mx8bit
32Mx16bit)
512Mb
HY27USXX121M
package tsop1
512MBIT
hynix nand
HY27
HY27SSXX121M
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AS4C32M16S-7AI
Abstract: TSOP 54 II
Text: Datasheet | Rev. 1.1 | 2012 512Mbit Single-Data-Rate SDR SDRAM AS4C64M8S-7TCN 64Mx8 (16M x 8 x 4 Banks) AS4C32M16S-7TCN 32Mx16 (8M x 16 x 4 Banks) Datasheet Version 1. 1 1 512 Mbit SDRAM AS4C[08/16] Revision History R Rev. 1.1 April 2012 Revised Operating-; Standby- and Refresh Currents
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512Mbit
AS4C64M8S-7TCN
64Mx8
AS4C32M16S-7TCN
32Mx16
AS4C32M16S-7AI
TSOP 54 II
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Untitled
Abstract: No abstract text available
Text: M65KC512AB 512Mbit 4 Banks x 4M x 32 , 133MHz Clock Rate, Bare Die, 1.8V Supply, Low Power SDRAM Preliminary Data Features summary • 512Mbit Synchronous Dynamic Ram – Organized as 4 Banks of 4MWords, each 32 bits wide ■ Supply Voltage – VDD = 1.7 to 1.9V (1.8V typical in
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M65KC512AB
512Mbit
133MHz
512Mbit
133MHz
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Untitled
Abstract: No abstract text available
Text: FPGA Configurator FC512 Interconnect Systems, Inc. www.isipkg.com DATA SHEET FEATURES DESCRIPTION • Ultra-Compact Configuration Solution 512Mbit Flash + Controller Supports up to 32-bit wide Fast Passive Parallel FPP configuration bus The FC512 is a single device configuration solution that
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FC512
512Mbit
32-bit
FC512
512Mbits
216-ball,
100ms
13x13mm
216-ball
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Untitled
Abstract: No abstract text available
Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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512MBit
16Mx32bit)
11Preliminary
512Mbit
32bits
200us
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LA2 DT2
Abstract: BGA64 TC59LM906AMG TC59LM914AMG P-BGA64-1317-1
Text: TC59LM914/06AMG-37,-50 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_18 / HSTL_Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM914/06AMG is Fast Cycle
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TC59LM914/06AMG-37
512Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM914/06AMG
TC59LM914AMG
TC59LM906AMG
LA2 DT2
BGA64
P-BGA64-1317-1
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Untitled
Abstract: No abstract text available
Text: M65KG512AB 512Mbit 4 Banks x 8M x 16 1.8V supply, DDR Low Power SDRAM Features • 512Mbit Synchronous Dynamic RAM – Organized as 4 Banks of 8MWords, each 16 bits wide ■ Double Data Rate (DDR) – 2 Data Transfers/Clock cycle – Data Rate: 332Mbit/s max. for 6ns speed
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M65KG512AB
512Mbit
512Mbit
332Mbit/s
133MHz
166MHz
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gddr5
Abstract: K4N51163QC-ZC K4N51163QC-ZC25 K4N51163QC-ZC2A K4N51163QC-ZC33 K4N51163QC-ZC36
Text: 512M gDDR2 SDRAM K4N51163QC-ZC 512Mbit gDDR2 SDRAM Revision 1.5 October 2005 Notice INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,
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K4N51163QC-ZC
512Mbit
gddr5
K4N51163QC-ZC
K4N51163QC-ZC25
K4N51163QC-ZC2A
K4N51163QC-ZC33
K4N51163QC-ZC36
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25l512
Abstract: 25L5121 HYB25L512160AC HYE25L512160AC 25l51216
Text: D a t a S he et , R e v . 1 . 2 , F e b . 2 00 4 HYB25L512160AC–7.5 HYE25L512160AC–7.5 512MBit Mobi le- RAM S t an d a r d T e m p e r at u r e R an g e E x t en d e d T e m p e r a t u r e R a n g e M e m or y P r o du c t s N e v e r s t o p t h i n k i n g .
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HYB25L512160AC
HYE25L512160AC
512MBit
10212003-BSPE-77OL
25L512160AC
P-TFBGA-54-2
MO207G
FBGA-54
25l512
25L5121
25l51216
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BGA64
Abstract: TC59LM905AMB TC59LM913AMB
Text: TC59LM913/05AMB-50,-55 TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC 512Mbits Network FCRAM1 SSTL_2 Interface − 4,194,304-WORDS x 8 BANKS × 16-BITS − 8,388,608-WORDS × 8 BANKS × 8-BITS DESCRIPTION Network FCRAMTM is Double Data Rate Fast Cycle Random Access Memory. TC59LM913/05AMB is Network
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TC59LM913/05AMB-50
512Mbits
304-WORDS
16-BITS
608-WORDS
TC59LM913/05AMB
TC59LM913AMB
TC59LM905AMB
BGA64
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H55S5132DFR
Abstract: H55S5122 h55s512 RA13 mobile MOTHERBOARD CIRCUIT diagram H55S5122DFR
Text: 512MBit MOBILE SDR SDRAMs based on 4M x 4Bank x32 I/O Specification of 512M 16Mx32bit Mobile SDRAM Memory Cell Array - Organized as 4banks of 4,194,304 x32 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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512MBit
16Mx32bit)
512Mbit
H55S5122DFR
H55S5132DFR
32bits
200us
H55S5122
h55s512
RA13
mobile MOTHERBOARD CIRCUIT diagram
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H5MS5162
Abstract: H5MS5162DFR h5ms5162dfr-j3m hynix mcp DDR333 DDR370 DDR400
Text: 512Mbit MOBILE DDR SDRAM based on 8M x 4Bank x16 I/O Specification of 512Mb 32Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 8,388,608 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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512Mbit
512Mb
32Mx16bit)
512Mbit
16bit)
H5MS5162DFR
16bits)
H5MS5162
h5ms5162dfr-j3m
hynix mcp
DDR333
DDR370
DDR400
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hy5rs123235b
Abstract: HY5RS123235BFP HY5RS123235
Text: HY5RS123235BFP 512Mbit 16Mx32 GDDR3 SDRAM HY5RS123235BFP This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied.
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HY5RS123235BFP
512Mbit
16Mx32)
HY5RS123235BFP
hy5rs123235b
HY5RS123235
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