Untitled
Abstract: No abstract text available
Text: ICE27LC512 512K bit, 64KX8 OTP EPROM Description The ICE27LC512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 3.3V power supply in normal read mode operation. Any byte can be accessed in less than 100ns. The ICE27LC512 typically consumes 10mA ,
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ICE27LC512
64KX8)
ICE27LC512
100ns.
voltage69
120ns
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Untitled
Abstract: No abstract text available
Text: DS-ICE27LC512 512K bit, 64KX8 OTP EPROM Description The ICE27LC512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 3.3V power supply in normal read mode operation. Any byte can be accessed in less than 100ns. The ICE27LC512 typically consumes 10mA ,
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DS-ICE27LC512
64KX8)
ICE27LC512
100ns.
100ns
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Untitled
Abstract: No abstract text available
Text: ICE37LC512 512K bit, 64KX8 OTP EPROM Description The ICE37LC512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 3.3V power supply in normal read mode operation. Any byte can be accessed in less than 100ns. The ICE37LC512 typically consumes 10mA ,
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ICE37LC512
64KX8)
ICE37LC512
100ns.
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Untitled
Abstract: No abstract text available
Text: DS-ICE37LC512 512K bit, 64KX8 OTP EPROM Description The ICE37LC512 is a low-power, high-performance 512k(524288) bit one-time programmable read only memory (OTP EPROM) organized as 64K by 8 bits. It is single 3.3V power supply in normal read mode operation. Any byte can be accessed in less than 100ns. The ICE37LC512 typically consumes 10mA ,
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DS-ICE37LC512
64KX8)
ICE37LC512
100ns.
32-Lead,
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FM27C040
Abstract: 27C010 FM27C040QXXX
Text: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide
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FM27C040
304-Bit
FM27C040
304-bit
150ns
32-pin
27C010
FM27C040QXXX
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27C080
Abstract: NM27C040 27C010 27C020
Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide
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NM27C040
304-Bit
NM27C040
304-bit
150ns
32-pin
27C080
27C010
27C020
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512K x 8 High Performance CMOS EPROM
Abstract: 27C010 27C020 27C080 NM27C040
Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide
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NM27C040
304-Bit
NM27C040
304-bit
150ns
32-pin
512K x 8 High Performance CMOS EPROM
27C010
27C020
27C080
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27C010
Abstract: FM27C040 FM27C040QXXX FM27C040VXXX J32AQ VA32A
Text: FM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide
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FM27C040
304-Bit
FM27C040
304-bit
150ns
32-pin
27C010
FM27C040QXXX
FM27C040VXXX
J32AQ
VA32A
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he 8050d
Abstract: 4704 8 pin ic IOA2 musical applications of microprocessor
Text: Preliminary SPC501A 512KB EPROM SOUND CONTROLLER GENERAL DESCRIPTION The SPC501A is a CPU based two-channel speech/melody synthesizer including CMOS 8-bit microprocessor with 69 instructions, 512K-byte EPROM for speech and melody data Speech is compressed by a 4-bit ADPCM
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SPC501A
512KB
SPC501A
512K-byte
128-byte
he 8050d
4704 8 pin ic
IOA2
musical applications of microprocessor
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C1995
Abstract: J32AQ NM27C040 VA32A
Text: NM27C040 4 194 304-Bit 512K x 8 High Performance CMOS EPROM General Description The NM27C040 is a high performance 4 194 304-bit Electrically Programmable UV Erasable Read Only Memory It is organized as 512K words of 8 bits each Its pin-compatibility with byte-wide JEDEC EPROMs enables upgrades through
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NM27C040
304-Bit
NM27C040
304-bit
C1995
J32AQ
VA32A
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q901
Abstract: No abstract text available
Text: M27C800 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM COMPATIBLE LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Standby Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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M27C800
26sec.
FDIP42W
M27C800
q901
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M27C800
Abstract: PLCC44 Q15A
Text: M27C800 8 Megabit 1Meg x 8 or 512K x 16 UV EPROM and OTP EPROM FAST ACCESS TIME: 90ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION – Active Current 70mA at 8MHz – Stand-by Current 100µA PROGRAMMING VOLTAGE 12.5V ± 0.3V
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M27C800
26sec.
M27C800
PLCC44
Q15A
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Seeq Technology
Abstract: Seeq A12C 47f512
Text: eeeQ 47F512 512K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features m 64K Byte Flash Erasable Non-Volatile Memory • Input Latches for Writing and Erasing ■ Low Power CMOS Process ■ Flash EPROM Cell Technology ■ Fast Byte Write: 22S /is max
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47F512
MD400076/-
MD400076/-
Seeq Technology
Seeq
A12C
47f512
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Untitled
Abstract: No abstract text available
Text: seeQ 47F512 512K Bit Flash EPROM October 1989 PRELIMINARY DATA SHEET I Block Diagram Features • 64K Byte Flash Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Low Power CMOS Process ■ Flash EPROM Cell Technology ■ Fast Byte Write: 225 ps max
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47F512
MD400076/-
47F512
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27C010
Abstract: 27C020 27C080 NM27C040
Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide
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OCR Scan
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NM27C040
304-Bit
NM27C040
304-bit
120ns
27C010
27C020
27C080
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TM NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Programmable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide
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OCR Scan
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NM27C040
304-Bit
NM27C040
304-bit
150ns
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PDF
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J32AQ
Abstract: NM27C040 VA32A
Text: tm NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read Only Memory. It is organized as 512K words of 8 bits each. Its pin-com patibility with byte-wide
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OCR Scan
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NM27C040
304-Bit
NM27C040
304-bit
100ns
J32AQ
VA32A
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AOI32
Abstract: No abstract text available
Text: SEEÚ TECHNOL OGY INC 11E I> • flina33 Q0027M4 0 E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features ■ 64K Byte FLASH Erasable Non-Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225ps max
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flina33
Q0027M4
E/M47F512
225ps
M47F512)
E47F512)
MD400084/·
ail1233
0QG27S3
AOI32
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6142E
Abstract: MD4000 SEEQ eprom
Text: E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 64K Byte FLASH Erasable Non- Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 ps max rn ~55°C to +125-C Temp Read M47FS12
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E/M47F512
125-C
M47FS12)
E47F512)
MD400083/-
E/M47F512
47F512
6142E
MD4000
SEEQ eprom
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6142E
Abstract: No abstract text available
Text: E/M47F512 512K Bit CMOS FLASH EPROM October 1989 PRELIMINARY DATA SHEET Block Diagram Features • 64K Byte FLASH Erasable Non- Volatile Memory ■ Input Latches for Writing and Erasing ■ Fast Byte Write: 225 fis max ■ - 5 5 °C to +125°C Temp Read M47F512
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E/M47F512
M47F512)
E47F512)
MD400083/-
47F512
MD400083
6142E
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M27C040
Abstract: 27C040Q
Text: NM27C040 4,194,304-Bit 512K x 8 High Performance CMOS EPROM General Description Features The NM 27C040 is a high performance, 4,194,304-bit Electrically Program mable UV Erasable Read O nly Memory. It is organized as 512K w ords of 8 bits each. Its pin-com patibility with byte-wide
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OCR Scan
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NM27C040
304-Bit
27C040
304-bit
120ns
M27C040
27C040Q
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27V800
Abstract: No abstract text available
Text: SGS-THOMSON M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 _ UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT
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OCR Scan
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M27V800
110ns
100jiA
26sec.
M27V800
M27C800
27V800
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Untitled
Abstract: No abstract text available
Text: J u ly 1998 SEMICONDUCTOR TM FM27C040 4,194,304-Bit 512K x 8 High Speed CMOS EPROM General Description Features The FM27C040 is a high performance, 4,194,304-bit Electrically Programmable Readonly Memory. It is organized as 512K words of 8 bits each. Its pin-compatibility with byte-wide JEDEC EPROMs
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OCR Scan
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FM27C040
304-Bit
FM27C040
304-bit
32-pinim
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON llllMJilLliMWIiei M27V800 LOW VOLTAGE 8 Megabit 1 Meg x 8 or 512K x 16 UV EPROM and OTP EPROM PRELIMINARY DATA LOW VOLTAGE READ OPERATION: 3V to 5.5V FAST ACCESS TIME: 110ns WORD-WIDE or BYTE-WIDE CONFIGURABLE 8 Megabit MASK ROM REPLACEMENT LOW POWER CONSUMPTION
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OCR Scan
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M27V800
110ns
FDIP42W
26sec.
M27V800
M27C800
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