u843
Abstract: MSM514222B ZIP20
Text: J2L0030-17-Y1 ¡ 電子デバイス 作成：1998年 1月 MSM514222B l 前回作成：1997年 9月 MSM514222B 262,263-Wordx4-Bit FIELD MEMORY n 概要 MSM514222Bは512行×512行×4ビットのCMOSダイナミックメモリで、高速非同期リード／ラ
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J2L0030-17-Y1
MSM514222B
MSM514222B
263-Word
MSM514222B512
300mil16
DIP26/20SOJ400mil20ZIP
u843
ZIP20
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WM1-DIN
Abstract: No abstract text available
Text: V52C4256 MOSEL VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (tAA)
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V52C4256
V52C4256
WM1-DIN
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AS7C1028-25PC
Abstract: AS7C1028-20JC 28-pin SOJ SRAM AS7C1028 AS7C1028-12TPC 7C1028
Text: High Performance 256Kx4 CMOS SRAM AS7C1028 AS7C1028L 256K×4 CMOS SRAM Features • Organization: 262,144 words × 4 bits • High speed - 12/15/20/25/35 ns address access time - 4/4/5/6/8 ns output enable access time • Low power consumption - Active: 660 mW max 15 ns cycle
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AS7C1028
AS7C1028L
28-pin
AS7C1028-25PC
AS7C1028-20JC
28-pin SOJ SRAM
AS7C1028
AS7C1028-12TPC
7C1028
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MSM514252A
Abstract: SOJ28 514252 h8ca-s
Text: J2L0012-17-Y1 作成：1998年 1月 MSM514252A l 前回作成：1997年 9月 ¡ 電子デバイス MSM514252A 262,144-Wordx4-Bit MULTIPORT DRAM n 概要 MSM514252Aは256Kワ−ド×4ビットのダイナミックランダムアクセスメモリ（RAM）ポ−ト
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J2L0012-17-Y1
MSM514252A
MSM514252A
144-Word
MSM514252A256K-
5128ms
28400milZIP
ZIP28-P-400-1
MSM514252A-xxZS
28400milSOJ
SOJ28
514252
h8ca-s
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u843
Abstract: MSM51V4222C ZIP20
Text: FJDS51V4222C-01 作成：2000年 2月 ¡ 電子デバイス MSM51V4222C 262,263-Wordx4-Bit FIELD MEMORY • 概要 MSM51V4222Cは512行×512行×4ビットのCMOSダイナミックメモリで、高速非同期リード／ ライト動作可能なシリアルアクセスメモリです。 MSM51V4222Cは、高速、低消費電力、大容量が要
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FJDS51V4222C-01
MSM51V4222C
263-Word
MSM51V4222C512
300mil16
DIP26/20SOJ400mil20ZIP
u843
MSM51V4222C
ZIP20
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PDF
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u843
Abstract: MSM51V4221C ZIP20 512-5124
Text: FJDS51V4221C-01 作成：2000年 2月 ¡ 電子デバイス MSM51V4221C 262,263-Wordx4-Bit FIELD MEMORY • 概要 MSM51V4221Cは512行×512行×4ビットのCMOSダイナミックメモリで、高速非同期リード／ ライト動作可能なシリアルアクセスメモリです。 MSM51V4221Cは、高速、低消費電力、大容量が要
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FJDS51V4221C-01
MSM51V4221C
263-Word
MSM51V4221C512
300mil16
DIP26/20SOJ400mil20ZIP
u843
MSM51V4221C
ZIP20
512-5124
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PDF
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TC514258
Abstract: 4256AP 58ab AZ-70
Text: TOSHIBA MOS MEMORY PRODUCTS TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as
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TC514258AP/AJ/AZ-70,
TC514258AP/AJ/AZ-80
TC514258AP/AJ/AZ-10
TC514258AP/AJ/AZ
TC514258AP/AJ/AZ-70.
TC514258AP/A4/AZ-80
TC514258
4256AP
58ab
AZ-70
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TC55B4257
Abstract: TC55B4257J TC55B4257J12 TC55B4257J-12 TC55B4257J-15 55B4257J-12
Text: TOSHIBA TC55B4257J-12/15/20 SILICON GATE BiCMOS 262,144 WORD x 4 BIT BiCMOS STATIC RAM Description The TC55B4257J is a 1,048,576 bit high speed BiCMOS static random access memory organized as 262,144 words by 4 bits and operated from a single 5V suoply. Toshiba's BiCMOS technology and advanced circuit design enable high speed operation.
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TC55B4257J-12/15/20
TC55B4257J
TC55E
4257J
400mil
32-pin
B-114
TC55B4257
TC55B4257J12
TC55B4257J-12
TC55B4257J-15
55B4257J-12
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TC514256AZ
Abstract: TC514256AP tc514256ajl TC514256
Text: T E N T A T IV E D A T A 2 6 2 ,1 4 4 W O R D x 4 B IT D Y N A M IC R A M D E S C R IP TIO N The TC514256APL/AJL/AZL is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256APL/AJL/AZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as
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TC514256APL/AJL/AZL
TC514256APL/AJL/AZL-70,
TC514256APL/AJL/AZL-80
TC514256APL/AJL/AZL-10
TC514256APL/A
L/AZL-80
TC514256APL/AJ
TC514256AZ
TC514256AP
tc514256ajl
TC514256
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Untitled
Abstract: No abstract text available
Text: MOSEL- VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4256 60 PRELIMINARY 80 10 70 ns 80 ns 100 ns 20 ns 25 ns 25 ns 40 ns 50 ns 70 Max. RAS Access Time, tp^c 60 ns Max. CAS Access Time, <tQAC) 15 ns Max. Column Address Access Time, (tAA)
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V52C4256
V52C4256
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Untitled
Abstract: No abstract text available
Text: H ig li P e rfo rm a n ce AS7C1028 A S7C1028L 256KX4 CMOS SRAM A 2 5 6 K X 4 CMOS SRAM Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o rd s x 4 b its • Easy m e m o r y e x p a n sio n w ith CE a n d OE in p u ts • H ig h sp e e d • T T L -c o m p atib le, th re e -s ta te I / O
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AS7C1028
S7C1028L
256KX4
1DD344
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TC524258B
Abstract: TC524258BZ TC524258BJ TC524258 tc5242588
Text: TOSHIBA TC524258B t a r g e t s il ic o n g a t e c m o s 262,144WORDS X 4BITS MULTIPORT DRAM DESCRIPTION T he TC524258B is a CM OS m ultiport m em ory equipped with a 262,144-words by 4-bits dynam ic random access m em ory RAM port and a 5 12-words by 4-bits static serial access memory (SAM ) port. The TC524258B
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TC524258B
144WORDS
TC524258B
144-words
12-words
TC524258BZ
TC524258BJ
TC524258
tc5242588
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TC514266
Abstract: TC514266A
Text: T ENTATIVE D A T A 2 5 2 ,1 4 4 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514266AP/AJ/AZ is the new generation dynam ic RAM organized 262,144 words by 4 bits. The TC514266AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC514266AP/AJ/AZ
TC514266
TC514266A
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Untitled
Abstract: No abstract text available
Text: M O SEL VETEUC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4256 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tCAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (1M )
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V52C4256
V52C4256
GG030bS
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Untitled
Abstract: No abstract text available
Text: M O S E L -V IT E L IC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM PRELIMINARY 60 70 80 10 Max. RAS Access Time, tp^c 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (tM )
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V52C4258
V52C4258
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LOGIC/MEMORY 4flE D I Q T T S M ñ 0 0 5 2 3 ^ 0 1 " T 4 f e -Z l- iO 262,144 W O R D x 4 BIT BiCM OS STATIC R A M PRELIMINARY DESCRIPTION The TC55B4256P/J is a 1,048,576 bits high speed static random access memory organized as 262,144 words by 4 bits using BiCMOS technology, and operated from a single 5-volt supply.
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TC55B4256P/J
D223c
TC55B4256P/Jâ
TC55B4256P/J-15,
TC55B4256P/J-20
DIP28
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TC514256
Abstract: TCS14256 TC514256B SOJ26-P-300 ZIP20-P-400
Text: PRELIMINARY 262 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514256BPL/BJL/BZL/BFTL is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256BPL/BJL/BZL/BFTL utilizes TOSHIBA’S CMOS Silicon gate process technology as
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TC514256BPL/BJL/BZL/BFTL
TC514256BPL/BJL/BZL/BFTL-60
TC514256BPL/BJ
L/BZL/BFTL-60
TC514256
TCS14256
TC514256B
SOJ26-P-300
ZIP20-P-400
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TC514258A
Abstract: 7g rac TC514258
Text: TC514258AP/AJ/AZ-7Û, TG514258ÂP/AJ/AZ-80 TC514258ÂP/AJ/AZ-10 T ENTATIVE D A T A 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC514258AP/AJ/AZ-7Û
TG514258
P/AJ/AZ-80
TC514258
P/AJ/AZ-10
TC514258AP/AJ/AZ
TC514258AP/AJ/AZ-70,
TG514258AP/AJ/AZ-80
TC514258A
7g rac
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TC514256AZ
Abstract: tc514256ap tc514256aj AZ-70 A187 toshiba TC514256AJ-80 TC514256AP/AJ/AZ-10
Text: TEN TA TIVE D A T A 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514256AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514256AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC514256AP/AJ/AZ
h4256AP/AJ/AZ-10
TC514256AP/AJ/AZ-70,
TC514256AP/AJ/AZ-80
TC514256AP/AJ/AZ-10
TC514256AZ
tc514256ap
tc514256aj
AZ-70
A187
toshiba TC514256AJ-80
TC514256AP/AJ/AZ-10
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S2L00
Abstract: No abstract text available
Text: 256K x 4 molale V id e o R A M M V M 4 2 5 9 -1 0 /1 2 Issue 2.0 : February 1992 P R E L IM IN A R Y S e m ic o n d u c to r Inc. Pin Definition 262,144 X 4 CMOS Fully Featured Video RAM SC SI01 SI02 DT/OE W1/I01 W 2/I02 WB/WE NC RAS A8 A6 A5 A4 Vcc Features
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MIL-STD883D
S2L00
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Untitled
Abstract: No abstract text available
Text: M O S E L V IT E U C V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM 60 70 80 10 Max. RAS Access Time, tRAC 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (t*) 30 ns 35 ns 40 ns
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V52C4256
V52C4256
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ltls
Abstract: MARK M2W SI03 256kx4 vram IRFH fscj V52C4258
Text: JON i 2 '982 V V'TELIC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 512 X 4 SAM HIGH PERFORMANCE V52C4258 80 10 Max. RAS Access Time, tnAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)
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V52C4258
V52C4258
144-words
512-words
ltls
MARK M2W
SI03
256kx4 vram
IRFH
fscj
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a231 ax hen no
Abstract: BFT te 04 A225
Text: TC514258BP/BJ/BZ/BFT-60 tli I k di llki'iilii in militi, lit Lit llit. lit i t i , i. 262,144 W O R D x4 BI T D Y N A M I C * . . . i l ., PRELIMINARY RAM DESCRIPTION T he TC514258BP/BJ/BZ/BFT is Che new g en eratio n dynam ic RAM organized 262,144 words oy 4 bits.
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TC514258BP/BJ/BZ/BFT-60
TC514258BP/BJ/BZ/BFT
TC514258BP/rBJ/BZ/BFT
2G/20
a231 ax hen no
BFT te 04
A225
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Untitled
Abstract: No abstract text available
Text: iw‘ VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)
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V52C4256
3910N.
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