fast diode SOT-227
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.110W POWER MOS 7TM FREDFET • Lower Input Capacitance • Lower Miller Capacitance • Lower Gate Charge, Qg Symbol VDSS ID 27 2 T- D G SO "UL Recognized" ISOTOP • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package
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APT8011JFLL
OT-227
fast diode SOT-227
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45V7
Abstract: AN-994 IRL3402 IRL3402S
Text: PD - 9.1693 IRL3402S PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G ID = 85A S Description These HEXFET Power MOSFETs were designed
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IRL3402S
45V7
AN-994
IRL3402
IRL3402S
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Untitled
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JFLL
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Untitled
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JFLL
OT-227
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APT8011JFLL
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.110Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JFLL
OT-227
APT8011JFLL
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APT8011JFLL
Abstract: No abstract text available
Text: APT8011JFLL 800V 51A 0.125Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JFLL
OT-227
APT8011JFLL
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IRL3402
Abstract: MOSFET 700V TO 220
Text: PD - 9.1697 IRL3402 PRELIMINARY HEXFET Power MOSFET l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching D VDSS = 20V RDS on = 0.01Ω G Description ID = 85A
S These HEXFET Power MOSFETs were designed
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IRL3402
O-220
O-220
IRL3402
MOSFET 700V TO 220
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Untitled
Abstract: No abstract text available
Text: APT8011JLL 800V 51A 0.110Ω R POWER MOS 7 S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JLL
OT-227
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APT8011JLL
Abstract: No abstract text available
Text: APT8011JLL 800V 51A 0.110Ω POWER MOS 7 R S S MOSFET 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT8011JLL
OT-227
APT8011JLL
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APT50M75
Abstract: APT50M75JLL
Text: APT50M75JLL 500V POWER MOS 7 R MOSFET VDSS 27 2 T- D G SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS Symbol S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT50M75JLL
OT-227
APT50M75
APT50M75JLL
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Untitled
Abstract: No abstract text available
Text: APT50M75JLL 51A 0.075Ω 500V R POWER MOS 7 MOSFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JLL
OT-227
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APT50M75JFLL
Abstract: APT50M75
Text: APT50M75JFLL 500V POWER MOS 7 R 0.075Ω 51A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JFLL
OT-227
APT50M75JFLL
APT50M75
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Untitled
Abstract: No abstract text available
Text: TSP2950/TSP2951 150mA Ultra Low Dropout Positive Voltage Regulator SOP-8 TO-92 Pin Definition: 1. Output 2. Sense 3. Shutdown 4. Ground TO-252 Pin Definition: 1. Output 2. Ground 3. Input 8. Input 7. Feedback 6. Voltage tap 5. Error flag Pin Definition: 1. Input
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TSP2950/TSP2951
150mA
O-252
TSP2950/A
TSP2951/A
380mV
100mA)
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Untitled
Abstract: No abstract text available
Text: APT50M75JFLL 500V POWER MOS 7 R 0.075Ω 51A FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT50M75JFLL
OT-227
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k300k1
Abstract: K51A ALIMENTATION LIGHT DIODE wave guide noise diode fiesta de8h Scans-0017953 "noise diode"
Text: PHILIPS K 51A R a r e gas f i l l e d MO TSE D FODE f o r u se i n wave guide systems a t th e 10 cm wave band DFODE DE SO U FF LE à gaz r a r e p o u r u t i l i s a t i o n d a n s l e s d i s p o s i t i f s , à g u id e d 'o n d e s dans l a gamme 10 cm
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p65C51
Abstract: No abstract text available
Text: HARRIS SEMÏCOND SECTOR [£ } MGE D m 4302271 Q0332fi3 T E2JHAS H L A J R R IS c CD January 1991 CMOS Asynchronous Communications -0 5 Interface A dapter ACIA Features • • • • • • • • • • • • • • • P in o u t C o m patible W ith 8 -B lt M icroprocessors
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Q0332fi3
-4234I
p65C51
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CDP65C51
Abstract: diagram remote control receiver and transmitter CDP65C51A CDP65 CDP65C51A-4
Text: 1 h a f r f J a n u a ry 1 9 9 1 r i C D P 6 5 C 51 C D P 65C 51A s CMOS Asynchronous Communications Interface A dapter (ACIA) P in o u t F e a tu re s • • • • • • » • • • • • • • • C o m p a tib le W ith 8 - B it M ic ro p ro c e s s o rs
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cdp65c51
CDP65C51A
CDP65C5lear)
92CS-36776
92CS-4234I
CDP65C51
diagram remote control receiver and transmitter
CDP65C51A
CDP65
CDP65C51A-4
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CDP65C51A
Abstract: CDP65C51
Text: 1 h a f r f J a n u a ry 1 9 9 1 r i C D P 6 5 C 51 C D P 65C 51A s CMOS Asynchronous Communications Interface A dapter (ACIA) P in o u t F e a tu re s • • • • • • » • • • • • • • • C o m p a tib le W ith 8 - B it M ic ro p ro c e s s o rs
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cdp65c51
CDP65C51A
CDP65C5
92CS-36776
92CS-4234I
CDP65C51A
CDP65C51
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Untitled
Abstract: No abstract text available
Text: PD - 9.1697 International IÖR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V R ü S o n = 0 . 0 1 Í 2 Id = 8 5 A Description
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IRL3402
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65c51
Abstract: CDP65C51 cdp65c p65C51
Text: • ■ ■ CDP65C51 C D P 65C 51A HARRIS J a n u a ry 1991 CMOS Asynchronous Communications Interface Adapter ACIA P in o u t F e a tu re s • • • • C o m p a tib le W ith S -B It M ic ro p ro c e s s o rs Full D u p le x O p e ra tio n W ith B u ffe re d R e c e iv e r a n d T ra n s m itte r
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CDP65C51
65c51
cdp65c
p65C51
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82C51
Abstract: 82c51 pin 44
Text: OKI semiconductor MSM82C51A-2RS/GS/JS_ U N IV ER SA L SYNCHRONOUS ASYNCHRONOUS R E C E IV E R TR A N SM ITTER G E N E R A L DESCRIPTION The M SM 82 C 51A is a U S A R T Universal Synchronous Asynchronous Receiver Transm itter for serial data communication.
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MSM82C51A-2RS/GS/JS_
MSM82C51A
MSM82C51A-2RS/GS/JS
82C51
82c51 pin 44
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Untitled
Abstract: No abstract text available
Text: I faSMIña? D0141E3 t, I MITSUBISHI ADVANCED SCHOTTKY TTL M74F151AP/FP/DP * ' sf 6> cl «O* a .ic^ 0* % £ * MITSUBISHI ÍC6TL LOGIC} 07E ¿ 8-LINE TO 1-LINE DATA SELECTOR/M ULTIPLEXER WITH STROBE DESCRIPTION PIN CONFIGURATION TOP VIEW , T h e M 7 4F 1 51A P is a sem iconductor in teg rated circuit
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D0141E3
M74F151AP/FP/DP
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6v8a
Abstract: 67 6283 PFZ47 BZW06-5V8 BZW06-6V4 BZW06-7V0 BZW06-7V8 DTZ10 DTZ15 P6KE10A
Text: transient voltage suppressors «TRANSIL» diodes de p rotection «TRANSIL» THOMSON-CSF Types Unidirec tional 1,5 KW PFZ 6V8 PFZ 6V8 A PFZ 7V5 PFZ 7V5 A PFZ 8V2 PFZ 8V2 A PFZ 9V1 PFZ 9V1 A PFZ 10 PFZ 10 A PFZ 11 PFZ 11 A PFZ 12 PFZ 12 A PFZ 13 PFZ 13 A PFZ 15
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BZW06-33
BZW06-37
ICTE-45C
T-ICTE-45C
BZW06-40
BZW06-44
BZW06-48
BZW06-53
BZW06-58
BZW06-64
6v8a
67 6283
PFZ47
BZW06-5V8
BZW06-6V4
BZW06-7V0
BZW06-7V8
DTZ10
DTZ15
P6KE10A
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Untitled
Abstract: No abstract text available
Text: PD - 9.1697A International IQR Rectifier IRL3402 PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching V dss = 20 V RüS on = 0.01 £2 lD = 85A Description These HEXFET Power MOSFETs were designed
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IRL3402
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