51V6 Search Results

51V6 Result Highlights (3)

Part	ECAD Model	Manufacturer	Description	Download	Buy
RJE5918851V6N		Amphenol Communications Solutions	Modular Jack - 8P8C, Right Angle, Cat6, THR, Standard Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs
RJE5818851V6N		Amphenol Communications Solutions	Modular Jack - 8P8C, Right Angle, Cat5e, THR, Standard Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs
RJE6018851V6N		Amphenol Communications Solutions	Modular Jack - 8P8C, Right Angle, Cat6A, THR, Standard Profile, Single Port, Shield With Top and Side EMI Tabs, With LEDs

51V6 Price and Stock

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TDK Corporation B72724A8151V62 Varistors ARRAY 14V 1A 3pF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	B72724A8151V62		1,497			1 $0.57 10 $0.486 100 $0.364 1000 $0.228 10000 $0.185	Buy Now
United Chemi-Con Inc EKMZ451VSN681MR50S Aluminum Electrolytic Capacitors - Snap In 680uF 450V 20% 30X50
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	EKMZ451VSN681MR50S		204			1 $14.56 10 $13.48 100 $10.49 1000 $9.69 10000 $9.69	Buy Now
Taiwan Semiconductor 1.5SMC51 ESD Protection Diodes / TVS Diodes 1500W, 51V, 10%, Unidirectional, TVS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	1.5SMC51					1 $0.61 10 $0.533 100 $0.37 1000 $0.235 10000 $0.185	Get Quote
United Chemi-Con Inc EKMS251VSN681MP50S Aluminum Electrolytic Capacitors - Snap In 250Volts 680uF 20% Tol.
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	EKMS251VSN681MP50S					1 - 10 - 100 - 1000 $3.41 10000 $3.41	Get Quote
United Chemi-Con Inc EKMS251VSN681MQ40S Aluminum Electrolytic Capacitors - Snap In 250Volts 680uF 20% Tol.
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Mouser Electronics	EKMS251VSN681MQ40S					1 - 10 - 100 - 1000 $3.52 10000 $3.52	Get Quote

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51V6 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: CM C! Sem iconductor MSM 51V64805 E2G1015-17-42 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64805 is a 8,388,608-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64805 achieves high integration, high-speed operation, and low-power	OCR Scan	51V64805 E2G1015-17-42 608-Word MSM51V64805 32-pin	PDF
Untitled Abstract: No abstract text available Text: O K I Semiconductor E2G1013-17-43 M SM 51V64800_ 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTIO N The 51V64800is a 8388,608-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64800 achieves high integration, high-speed operation, and low-power	OCR Scan	51V64800_ 608-Word E2G1013-17-43 MSM51V64800is MSM51V64800 32-pin	PDF
S5400A Abstract: RO3035 Text: •« Y U M D H I • HY51 V64400A,HY51 V65400A 16Mx4, Fast Page mode DESCRIPTION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high speed of random access memory within the same row. The circuit and process design allow	OCR Scan	V64400A V65400A 16Mx4, 128ms cycle/64ms) S5400A RO3035	PDF
hy51v65804 Abstract: No abstract text available Text: 51V65804, 51V64804 HYUNDAI 8M x 8-bit CMOS DRAM with Extended Data Out PRELIMINARY DESCRIPTION ORDERING INFORMATION T h is fa m ily is a 6 4 M bit d y n a m ic R A M o rg a n iz e d 8 ,3 8 8 .6 0 8 x 8 -b it c o n fig u ra tio n w ith E x te n d e d D ata	OCR Scan	HY51V65804, HY51V64804 64804JC 64804LJC 64804S HY51V64804TC HY51V64804SLTC 65804JC 65804LJC hy51v65804	PDF
v64_5 Abstract: 51V65400 HY51V65400 Text: “HYUNDAI 51V64400, 51V65400 _16M x 4-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION This family is a 64M bit dynamic RAM organized 16,777,216 x 4-bit configuration with Fast Page mode CMOS DRAMs. Fast Page mode offers high	OCR Scan	HY51V64400, HY51V65400 HY51V64400JC HY51V64400LJC HY51V64400SLJC HY51V64400TC HY51V64400SLTC HY51V65400JC HY51V65400LJC v64_5 51V65400 HY51V65400	PDF
Untitled Abstract: No abstract text available Text: DRAMs i n ASMs 1 "’i ^ it ft ^ S r DRAMs I_ 1 Meg 4 Meg 16 M e g I 64K x 16 128K x 32 3 V 12BK x 32 (S V) 1-M eg x 16 \|3V) i i i i M SM 5 1 1 6 6 4 8 M S M 5 4 V 3 2 1 2 8 (E D O ) M S M 5 4 3 2 1 2 8 {E D O } i i t 256Kx4 256K x 16 (3 V) 2 5 6K x 1 6 (5 V )	OCR Scan	51V16160A 51V18160A 116160A 118160A 256Kx4 514260B/BSL 514256C/CL 51V6800A 51V16100A 51V17100A	PDF
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM51 V65165 _ E 2 G 1 0 2 0 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V65165 is a 4,194304-word x 16-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The 51V65165 achieves high integration, high-speed operation, and low-power	OCR Scan	MSM51 V65165 304-Word 16-Bit MSM51V65165 194304-word 50-pin	PDF
MD51V64405 Abstract: MD51V64405-50 MD51V64405-60 Text: E2G0137-18-11 O K I Semiconductor Thisvereion:^ 1998 51V64405_ 16,777,216-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO D ESC R IPTIO N The 51V64405 is a 16,777,216-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS	OCR Scan	E2G0137-18-11 MD51V64405 216-Word MD51V64405 32-pin MD51V64405-50 MD51V64405-60	PDF
intel 82c51 Abstract: Mitsubishi 82c54 intel p8085a PD8155H 51V16160 nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288 Text: M em ory 16-M eg D R A M s Refresh Toshiba NEC Hitachi Samsung Micron M SM 5116100 OKI Part Number Configuration 16 M e g x 1 5 4K T C 5 1 1610 0 p P D 4 2 1 6100 HM 5116100 KM41C16000 M T4C16M 1A1 M S M 5 1 1 616 0 1 M e g x 16 5 4K TC5116160A H PD 4216160	OCR Scan	51V16100 51V16160 51V16400 51V17100 51V17400 51V18160 TC5116160A TC5116800A TC5117800A uPD4216100 intel 82c51 Mitsubishi 82c54 intel p8085a PD8155H nec 8212c 82C55 harris 82c55 82C59 toshiba m5l8288	PDF
Untitled Abstract: No abstract text available Text: O K I Semiconductor 51V65800 E 2 G 1 0 1 4 -1 7 -4 3 8,388,608-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The 51V65800 is a 8,388,608-word x 8-bit dynamic RAM fabricated in Oki's si!icon-gate CMOS technology. The 51V65800 achieves high integration, high-speed operation, and low-power	OCR Scan	MSM51V65800 608-Word MSM51V65800 32-pin cycles/64	PDF
HY514260 Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616 Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .	OCR Scan	HY531000A. HY534256A. 256Kx4-bit, HY512260. 128KX16-bit, HY514260 HY5118160 HY5116160 HY5117404 HY51V65400 HY511616	PDF
Untitled Abstract: No abstract text available Text: 51V65800, 51V64800 •HYUNDAI 8M x 8-bit CMOS DRAM with Fast Page Mode PRELIMINARY DESCRIPTION ORDERING INFORMATION T his fam ily is a 64M bit d yn a m ic RAM organized 8,388,608 x 8-bit configuration w ith Fast Page mode CM O S DRAMs. Fast Page m ode offers high speed	OCR Scan	HY51V65800, HY51V64800 HY51V64800JC HY51V64800LJC HY51V64800SLJC HY51V64800TC HY51V64800SLTC HY51V65800JC HY51V65800LJC	PDF
Untitled Abstract: No abstract text available Text: O K I Semiconductor MSM51 V64165 _ E 2 G 1 0 1 9 -1 7 -4 2 4,194,304-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64165 is a 4,194,304-word x 16-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The 51V64165 achieves high integration, high-speed operation, and low-power	OCR Scan	MSM51 V64165 304-Word 16-Bit MSM51V64165 50-pin	PDF
MSM51V64405 Abstract: No abstract text available Text: O K I Semiconductor MSM5 1V64405_ E 2G 1011-17-42 16,777,216-Word x 4-Blt DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The 51V64405 is a 16,777,216-word x 4-bit dynamic RAM fabricated in Old's silicon-gate CMOS technology. The 51V64405 achieves high integration, high-speed operation, and low-power	OCR Scan	1V64405_ 216-Word MSM51V64405 32-pin	PDF