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    520MH Search Results

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    Abracon Corporation ASG-D-V-A-155.520MHZ

    XTAL OSC VCXO 155.5200MHZ LVDS
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    DigiKey ASG-D-V-A-155.520MHZ 22 1
    • 1 $11.09
    • 10 $9.637
    • 100 $8.3777
    • 1000 $7.4875
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    Newark ASG-D-V-A-155.520MHZ Bulk 250
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    Avnet Abacus ASG-D-V-A-155.520MHZ 14 Weeks 250
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    Texas Instruments LM10520MHE-NOPB

    IC REG CTRLR AVS 1OUT 28HTSSOP
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    DigiKey LM10520MHE-NOPB Reel 250
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    Rochester Electronics LLC LM10520MHE-NOPB

    SWITCHING CONTROLLER, VOLTAGE-MO
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    DigiKey LM10520MHE-NOPB Bulk 82
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    • 100 $3.66
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    ITG Electronics Inc L201316Q-520MHF

    52.0UH, 20%, 3.50MOHM, 35.50A MA
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    DigiKey L201316Q-520MHF Reel 9
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    Abracon Corporation ASG-P-V-B-491.520MHZ

    XTAL OSC VCXO 491.5200MHZ LVPECL
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    DigiKey ASG-P-V-B-491.520MHZ
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    520MH Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    RA55H4452M

    Abstract: No abstract text available
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA55H4452M RoHS Compliance , 440-520MHz 55W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA55H4452M is a 55-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA55H4452M 440-520MHz RA55H4452M 55-watt 520-MHz PDF

    RD02MUS1

    Abstract: T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD02MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance,Silicon MOSFET Power Transistor 175MHz,520MHz,2W RD02MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF power amplifiers applications.


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    RD02MUS1 175MHz 520MHz RD02MUS1 175MHz, 520MHz 175MHz) 520MHz) T112 UHF transistor FET RD02MUS1-101 3M Touch Systems transistor J17 PDF

    RD07MVS1

    Abstract: RD07MVS1-101 T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


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    RD07MVS1 175MHz 520MHz RD07MVS1 520MHz 175MHz) 520MHz) RD07MVS1-101 T112 3M Touch Systems PDF

    RA13H4452M

    Abstract: RA13H4452M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA13H4452M RoHS Compliance , 440-520MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO DESCRIPTION The RA13H4452M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA13H4452M 440-520MHz RA13H4452M 13-watt 520-MHz RA13H4452M-101 PDF

    RA45H4452M

    Abstract: RA45H4452M-101
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA45H4452M RoHS Compliance , 440-520MHz 45W 12.5V, 3 Stage Amp. For MOBILE RADIO DESCRIPTION The RA45H4452M is a 45-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 440- to


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    RA45H4452M 440-520MHz RA45H4452M 45-watt 520-MHz RA45H4452M-101 PDF

    RA07M4452M

    Abstract: generator 4.20 mA
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RA07M4452 RA07M4452M 07M4452MSA OBSERVE HANDLING PRECAUTIONS RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier


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    RA07M4452M RA07M4452MSA 07M4452 440-520MHz RA07M4452MSA 520-MHz RA07M4452M generator 4.20 mA PDF

    RD07MVS1

    Abstract: RD07MVS1B T112 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1B Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 2.0+/-0.05 2 3.5+/-0.05 1.0+/-0.05


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    RD07MVS1B 175MHz 520MHz 520MHz 175MHz) 520MHz) RD07MVS1B RD07MVS1 T112 3M Touch Systems PDF

    RD09MUP2

    Abstract: No abstract text available
    Text: APPLICATION NOTE Silicon RF Power Semiconductors Document No. AN-UHF-072-B Date: 6th Feb. 2006 Rev.date : 22th Jun. 2010 Prepared: M.Miyashita S.Kametani Confirmed: T.Okawa Taking charge of Silicon RF by MIYOSHI Electronics SUBJECT: “RD09MUP2” 400-520MHz RF characteristics data


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    AN-UHF-072-B RD09MUP2" 400-520MHz RD09MUP2 RD09MUP2: 059XA-G" 400/520MHz 520MHz 3mm/50OHM 330pF PDF

    RD01MUS1-101

    Abstract: RD01MUS1 c111m RD01MSU1 3M Touch Systems
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD01MUS1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


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    RD01MUS1 520MHz RD01MUS1 520MHz RD01MUS1-101 c111m RD01MSU1 3M Touch Systems PDF

    100OHM

    Abstract: RD30HUF1
    Text: Silicon RF Power Semiconductors ELECTROSTATIC SENSITIVE DEVICE RD30HUF1 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor,520MHz,30W OUTLINE DESCRIPTION DRAWING 22.0+/-0.3 RD30HUF1 is a MOS FET type transistor specifically designed for UHF RF power amplifiers applications.


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    RD30HUF1 520MHz RD30HUF1 520MHz RD30HUF1-101 100OHM PDF

    20-TSSOP

    Abstract: KB8821 KB8822 KB8823
    Text: PRELIMINARY SPECIFICATION V1.5 FREQUENCY SYNTHESIZER KB8821/22/23 INTRODUCTION The KB8821/22/23 are high performance dual frequency synthesizers with integrated prescalers designed for RF operation up to 1.2GHz/2.0GHz/2.5GHz and IF operation up to 520MHz.


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    KB8821/22/23 KB8821/22/23 520MHz. KB8823) KB8821/22/ 20-TSly TEL-97-D003 20-TSSOP KB8821 KB8822 KB8823 PDF

    RD07MVS1

    Abstract: RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, DESCRIPTION RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W OUTLINE DRAWING 6.0+/-0.15 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 RD07MVS1 is a MOS FET type transistor


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    RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101 T112 07MVS1 3080D RD07MVS Rd07mvs1101 PDF

    GP 839 DIODE

    Abstract: RD01MUS2 GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 4.4+/-0.1 FEATURES •High power gain: Pout>0.8W, Gp>14dB @Vdd=7.2V,f=520MHz •High Efficiency: 65%typ.


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    RD01MUS2 520MHz 520MHz RD01MUS2 GP 839 DIODE GP 809 DIODE GP 841 Diode MOS FET 1127 RF Transistor s-parameter vhf RD01MUS2-101 t06 TRANSISTOR 5343 transistor transistor M 839 PDF

    RA07N4452M

    Abstract: RF MOSFET MODULE RA07N4452
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07N4452M RoHS Compliance , 440-520MHz 7.5W 9.6V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07N4452M is a 7.5-watt RF MOSFET Amplifier Module for 9.6-volt portable radios that operate in the 440- to


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    RA07N4452M 440-520MHz RA07N4452M 520-MHz RF MOSFET MODULE RA07N4452 PDF

    RA07M4452MSA

    Abstract: RA07M
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07M4452MSA RoHS Compliance , 440-520MHz 7.0W 7.2V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07M4452MSA is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to


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    RA07M4452MSA 440-520MHz RA07M4452MSA 520-MHz RA07M PDF

    RD07MVS1-101

    Abstract: RD07MVS1 T112 ID-750 RD07M D07MVS1 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RoHS Compliance, RD07MVS1 Silicon MOSFET Power Transistor,175MHz,520MHz,7W DESCRIPTION 4.6+/-0.05 3.3+/-0.05 0.8+/-0.05 0.2+/-0.05 0.22 OUTLINE DRAWING RD07MVS1 is a MOS FET type transistor


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    RD07MVS1 175MHz 520MHz RD07MVS1 RD07MVS1-101, RD07MVS1-101 T112 ID-750 RD07M D07MVS1 3M Touch Systems PDF

    RD01MUS2

    Abstract: RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems
    Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE RD01MUS2 OBSERVE HANDLING PRECAUTIONS RoHS Compliance, Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING 0.8 MIN 2.5+/-0.1 RD01MUS2 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.


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    RD01MUS2 520MHz RD01MUS2 520MHz RD01MUS2-101 GP 839 DIODE FAN 3792 MOS FET 1127 GP 809 DIODE IDQ100 01LOT 0703 transistor 3M Touch Systems PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Data Sheet CDS6E-380/520 6dB Directional Coupler Product Description RFS CDS*E series Directional Coupler has been design for indoor applications covering 380 to 520MHz. Units couple off a defined fraction of signal from 6 to 30 dB with minimal reflections or loss.The


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    CDS6E-380/520 520MHz. PDF

    RA07H4452M

    Abstract: RA07H4452M-01
    Text: MITSUBISHI RF MOSFET MODULE ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RA07H4452M 440-520MHz 7W 12.5V, 2 Stage Amp. For PORTABLE RADIO DESCRIPTION The RA07H4452M is a 7-watt RF MOSFET Amplifier Module for 12.5-volt portable radios that operate in the 440- to 520-MHz


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    RA07H4452M 440-520MHz RA07H4452M 520-MHz RA07H4452M-01 PDF

    SP8718

    Abstract: SP8718AC
    Text: SP8718AC 520MHz 64/65 TWO MODULUS DIVIDER CONFORMS TO MIL-STD-883C CLASS B The SP8718 -^64/65 is a 50mW program m able divider with a maximum specified operating frequency of 520MHz over the tem perature range -55° C to +125° C. The signal (clock) inputs are biased internally and require


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    SP8718AC 520MHz MIL-STD-883C SP8718 MIL-M-38510 fortheSP8718ACat SP8718 SP8718AC PDF

    Untitled

    Abstract: No abstract text available
    Text: SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 520M H z PRESCALER FU JIT S U MB1504 SERIAL INPUT PLL FREQUENCY SYNTHESIZER WITH 520MHz PRESCALER June 1 9 8 9 E d itio n 3 .0 The Fujitsu M B1504, u tilizin g BI-CMOS technology, is a single ch ip serial inp u t


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    MB1504 520MHz B1504, B1504 16-bit 15-bit 14-bit 19-bit 18-bi MB1504 PDF

    2SC3103

    Abstract: No abstract text available
    Text: - 198 - M A Sé fé '¡ ' m • 2 S C 3 1 0 3 EA %&WM is 'J -X , 2. 8Wo ffliÉ : VHF/uHF 150/400MHz «MSffl, 7. 2V m<a OHF 2* T' 20:1 VSWR tìÉtX-èo É : VHF/UHF (150/400MHz) UHF w ® 7 .2 v - y j - x , eifo 51 S Ì j i f t l M o W S : Vcc=9V, Po=6. 0W, f=520MHz O f j f f


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    2SC3103 520MHz 15CC/W) 520MFiZ 150/400MHz 27MHz 800MHz) 860MHz, PDF

    M64072FP

    Abstract: M64072 64072FP 20SOP 20P2N 20P2E 20S50 M6407
    Text: M IT S U B IS H I INTEGRATED CIRCUIT M 64072FP /G P 520MHz DUAL P L L FREQUENCY SYNTHESIZER DESCRIPTION M64072FP/GP is a 520MHz band 2 system 1 chip PLL fre­ quency synthesizer. Since PLL with 2 systems is incorpo­ rated, it is optimum for cordlessphone. duel band transceiv­


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    64072FP 520MHz M64072FP/GP 20SOP) 20P2N 20P2E 20SOP 20P2N) M64072FP M64072 20SOP 20P2N 20P2E 20S50 M6407 PDF

    24P2E

    Abstract: M64083GP
    Text: MITSUBISHI SEMICONDUCTORS [DIGITAL/ANALOG IC] M64083GP Dual PLL Frequency Synthesizer DESCRIPTION The M64083GP is a dual-circuit single-chip PLL frequency synthesizer 1C that supports a maximum direct input of 520MHz. The M64083GP includes a high-speed lockup function. This 1C is ideal for


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    M64083GP M64083GP 520MHz. 24P2E 24P2E PDF