AM28F020
Abstract: No abstract text available
Text: FINAL Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current
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Am28F020
32-pin
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AM27C040
Abstract: AM27C040-120 AM27C040-150 AM27C040-90 AM27C040-15 EC75
Text: FINAL Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard — <10 µA typical CMOS standby current
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Am27C040
28-pin
32-pin
AM27C040-120
AM27C040-150
AM27C040-90
AM27C040-15
EC75
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am29f040b
Abstract: Publication# 19957 Am29F040
Text: PRELIMINARY Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Sector Erase Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations — Minimizes system level power requirements ■ Manufactured on 0.35µm process technology
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Am29F040B
Am29F040
pre032
TSR032
32-Pin
16-038-TSOP-2
Publication# 19957 Am29F040
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EIA364
Abstract: EIA-364
Text: JUNE 30,1997 TEST REPORT #97236 QUALIFICATION TESTING FLE/FTSH SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. Contech Research CERTIFICATION This is to certify that the evaluation described herein was
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10012-l
EIA364
EIA-364
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AM28F256
Abstract: A1H Transistor AM28F256-150PC
Text: FINAL Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 µA maximum standby current
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Am28F256
32-Pin
A1H Transistor
AM28F256-150PC
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AM28F256A
Abstract: Am29Fxxx
Text: FINAL Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase
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Am28F256A
32-Pin
Am29Fxxx
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AM27X010
Abstract: DA79
Text: FINAL Am27X010 1 Megabit 128 K x 8-Bit CMOS ExpressROM Device DISTINCTIVE CHARACTERISTICS • ±10% power supply tolerance ■ As an OTP EPROM alternative: — Factory optimized programming ■ High noise immunity — Fully tested and guaranteed ■ Low power dissipation
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Am27X010
28-Pin
32-Pin
Am27X010-55
DA79
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omron 8567
Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Text: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830
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transistor S57
Abstract: transistor S56 s34 diode S-57 lc75883 EN528
Text: Ordering number : EN5289A CMOS LSI LC75883E, 75883W 1/3-Duty LCD Display Drivers with Key Input Function Overview Package Dimensions The LC75883E and LC75883W are 1/3-duty dynamic LCD display drivers that can directly drive LCDs with up to 171 segments and can control up to four generalpurpose output ports. These LSIs also incorporate a keyscan circuit that accepts input from up to 30 keys to
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EN5289A
LC75883E,
5883W
LC75883E
LC75883W
3174-QFP80E
LC75883E]
transistor S57
transistor S56
s34 diode
S-57
lc75883
EN528
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hot electron devices
Abstract: AM28F512A
Text: FINAL Am28F512A 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS low power consumption — 30 mA maximum active current ■ Embedded Erase Electrical Bulk Chip-Erase
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Am28F512A
32-Pin
hot electron devices
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AMD am2 socket pinout
Abstract: AMD socket AM2 pinout amd am2 pinout amd am2 6000 pin diagram AMD am2 socket pin amd am2 socket pin diagram AMD am2 socket pinout VOLTAGE hot electron devices pinout AM2 AMD socket AM2 pinout
Text: FINAL Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current — 100 µA maximum standby current
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Am28F020A
32-pin
AMD am2 socket pinout
AMD socket AM2 pinout
amd am2 pinout
amd am2 6000 pin diagram
AMD am2 socket pin
amd am2 socket pin diagram
AMD am2 socket pinout VOLTAGE
hot electron devices
pinout AM2 AMD
socket AM2 pinout
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IN3064
Abstract: Am29F00N Am29F002N AM29F002
Text: PRELIMINARY Am29F002/Am29F002N 2 Megabit 256 K x 8-Bit CMOS 5.0 Volt-only Boot Sector Flash Memory DISTINCTIVE CHARACTERISTICS • Single power supply operation — 5.0 Volt-only operation for read, erase, and program operations — Minimizes system level requirements
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Am29F002/Am29F002N
IN3064
Am29F00N
Am29F002N
AM29F002
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Untitled
Abstract: No abstract text available
Text: FINAL AMD£I Am28F256 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Latch-up protected to 100 mA from -1 V to V c c +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access time
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Am28F256
32-Pin
TS032--32-Pin
16-038-TSOP-2
TSR032--32-Pin
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AM29F040B
Abstract: No abstract text available
Text: PRELIMINARY A M D ii Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory Distinctive Characteristics • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ Manufactured on 0.35 pm process technology
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Am29F040B
Am29F040
twHwi-12-
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am27C040 4 Megabit 512 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ Single +5 V power supply — Available in speed options as fast as 90 ns ■ Low power consumption ■ ±10% power supply tolerance standard ■ 100% Flashrite programming
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Am27C040
28-pin
32-pin
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AM29F040B
Abstract: AM29F040B-70 AM29F040B-55 AM29F040B-1505
Text: A M D tl Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V ± 10% for read and write operations ■ — Minimizes system level power requirements ■ — Embedded Erase algorithm automatically
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Am29F040B
Am29F040
AM29F040B-70
AM29F040B-55
AM29F040B-1505
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am 28F512 512 Kilobit 64 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High perform ance ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip-Erase — 70 ns maximum access tim e
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28F512
32-Pin
16-038-S
PL032â
Am28F512
16-038FPO-5
TS032â
16-038-TSOP-2
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Untitled
Abstract: No abstract text available
Text: FINAL A M D ii Am28F020A 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Mem ory with Embedded Algorithm s DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Embedded Erase Electrical Bulk Chip Erase High performance
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Am28F020A
32-pin
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29f040b
Abstract: 29F040B70 AM29F040B
Text: AMDH Am29F040B 4 Megabit 512 K x 8-Bit CMOS 5.0 Volt-only, Uniform Sector Flash Memory DISTINCTIVE CHARACTERISTICS • 5.0 V + 10% for read and write operations ■ Embedded Algorithms — Minimizes system level power requirements — Embedded Erase algorithm automatically
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Am29F040B
Am29F040
29f040b
29F040B70
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Untitled
Abstract: No abstract text available
Text: FINAL AM D ii Am28F020 2 Megabit 256 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • ■ Latch-up protected to 100 mA from -1 V to Vcc +1 V ■ Flasherase Electrical Bulk Chip Erase High performance — Access times as fast as 70 ns
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Am28F020
32-pin
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Untitled
Abstract: No abstract text available
Text: AM D ii Am28F256A 256 Kilobit 32 K x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms DISTINCTIVE CHARACTERISTICS • High performance — Access times as fast as 70 ns ■ CMOS low power consumption — 30 mA maximum active current
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OCR Scan
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Am28F256A
32-Pin
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Untitled
Abstract: No abstract text available
Text: FINAL A M D il Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • 100% Flashrite programming ■ Fast access time — Speed options as fast as 45 ns — Typical programming time of 16 seconds ■ Low power consumption ■ Latch-up protected to 100 mA from -1 V to
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Am27C010
32-pin
AM27C010-45,
27C010
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Diode T3 D46
Abstract: 3220S EN528 DIODE k020 LC75883E LC75883W SQFP80
Text: Ordering number : EN5289A CMOS LSI LC75883E, 75883W No. 5289A SAmro 1/3-Duty LCD Display Drivers with Key Input Function i H H Overview Package Dimensions T h e L C 7 5 8 8 3 E an d L C 7 5 8 8 3 W a re 1/3-duly d y n am ic unit: mm L C D display drivers that can directly drive LC D s with up
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EN5289A
LC75883E,
5883W
LC75883E
LC75883W
Diode T3 D46
3220S
EN528
DIODE k020
SQFP80
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AM27C010
Abstract: 032-32-Pin AM27C010 Revision A
Text: FINAL A M D ii Am27C010 1 Megabit 128 K x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time ■ 100% Flashrite programming — Speed options as fast as 45 ns ■ — Typical program m ing tim e of 16 seconds Low power consumption ■ Latch-up protected to 100 mA from -1 V to
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Am27C010
32-pin
CDV032.
032-32-Pin
AM27C010 Revision A
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