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    52B33 Search Results

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    52B33 Price and Stock

    Taiwan Semiconductor BZT52B33S-R9G

    SOD-323F, 200MW, 2%, SMALL SIGNA
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    DigiKey BZT52B33S-R9G Digi-Reel 9,748 1
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    BZT52B33S-R9G Cut Tape 9,748 1
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    Vishay Semiconductors BZT52B33-HE3-08

    DIODE ZENER 33V 410MW SOD123
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    DigiKey BZT52B33-HE3-08 Digi-Reel 8,948 1
    • 1 $0.18
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    BZT52B33-HE3-08 Cut Tape 8,948 1
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    BZT52B33-HE3-08 Reel 6,000 3,000
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    Taiwan Semiconductor BZT52B33-G-RHG

    DIODE ZENER 33V 410MW SOD123
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    DigiKey BZT52B33-G-RHG Cut Tape 6,000 1
    • 1 $0.26
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    BZT52B33-G-RHG Reel 6,000 3,000
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    PanJit Group BZT52-B33S_R1_00001

    SURFACE MOUNT SILICON ZENER DIOD
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    DigiKey BZT52-B33S_R1_00001 Cut Tape 4,790 1
    • 1 $0.14
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    Ozdisan Elektronik BZT52-B33S_R1_00001
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    Micro Commercial Components BZT52B33JSHE3-TP

    200MW ZENER SOD-323
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    DigiKey BZT52B33JSHE3-TP Digi-Reel 3,000 1
    • 1 $0.33
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    BZT52B33JSHE3-TP Cut Tape 3,000 1
    • 1 $0.33
    • 10 $0.232
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    • 1000 $0.067
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    52B33 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    52B33-200 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33-200 Seeq Technology 8K x 8 nMOS EPROM Memory Scan PDF
    52B33-200 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33-250 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33-250 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33-300 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33-300 Seeq Technology 8K x 8 nMOS EPROM Memory Scan PDF
    52B33-350 Seeq Technology 8K x 8 nMOS EPROM Memory Scan PDF
    52B33-350 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33-350 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33H-200 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-200 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33/H-250 Seeq Technology 8K x 8 nMOS EPROM Memory Scan PDF
    52B33H-250 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-250 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33H-300 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-350 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-350 Seeq Technology Electrically Erasable ROM Scan PDF

    52B33 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: AF−9700 SERIES DEVICE LIST AF−9704 EPROM AF−9705 MOS AF−9706 EPROM AF−9707 PC AF−9721 GANG PROGRAMMER


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    PDF AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257

    st 27c256b

    Abstract: 28C64 EPROM programmer Winbond 27c512 27c65 eprom AM2764A intel 27c512 eprom L27C128 2864a 28H256 27C512
    Text: PRODUCT DATA SHEET AD62 479-913 and AD50 (479-834) Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch" Miscellaneous AD62 32 28 01 P .6 Clamshell Product Code Pins on skt Pins on Base


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    PDF AM2764A-# AM2764A- AM2764AJ Am2764J Am27C64- Am27C64-J Am27128A- Am27128A-J st 27c256b 28C64 EPROM programmer Winbond 27c512 27c65 eprom AM2764A intel 27c512 eprom L27C128 2864a 28H256 27C512

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


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    PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    7805CT

    Abstract: MOC5010 ip1717 UA741CN op amp TL081P LM3524N LM13080N 7824ct LM7915CK LM7905CK
    Text: Master Designer Version 8.5 Component Library Reference Volume 2 October 1995 All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted, in any form or by any means-electronic, mechanical, photocopying, recording, or otherwise-without the prior


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    PDF

    am29ma16

    Abstract: AM29M16 AM29M16 PLD atmel 404 93c46 29f512 gal18v8 ATMEL 24C32A COP8622C atmel 93C46 AT27040
    Text: Ironwood Electronics Programming Adapters PR.1 Programming Adapters allow the programming of PROM, PLD, EPROM, EEPROM or PAL devices on programmers or ATE equipment with DIP sockets. We support PLCC, LCC, PGA, SOIC including TSOP , FP, BGA and QFP packages.


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    vqc 10

    Abstract: 52B13 52B33 SEEQ 52B33
    Text: 52B13/52B23/52B33 52B13H/52B23H/52B33H Electrically Erasable R O M March 1983 P R O D U C T D E S C R IP T IO N Features • Input Latches ■ Single 5V Supply ■ Specified over V cc ±10% Range m TTL Byte Erase/Byte Write/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B13 52B13H 52B23 52B23H 52B33 52B33H vqc 10 SEEQ 52B33

    SEEQ 52B33

    Abstract: seeq52b33 seeq eeprom
    Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Features Description • SEEQ’s 52B33 is a 8 1 9 2 x8 bit, 5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70'JC temperature range. Data retention is specified to be greater than 10 years. The


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    PDF 52B33/52B33H 52B33/52B33H; 52B33H 52B33 52B33 200ns MD400008/B SEEQ 52B33 seeq52b33 seeq eeprom

    SEEQ 52B33

    Abstract: 52B33H-250
    Text: MSE D SEEû TECHNOLOGY INC • 011^33 00D3D4S 1 H SEE 52B33/52B33H 64K Electrically Erasable PROM August 1991 Features Description ■ SEEQ's 52B33 and 52B33H are 8192 x 8 bit, 5V electri­ cally erasable programmable read only memories EEPROMs which are available over all the industry


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    PDF 00D3D4S 52B33/52B33H 52B33H) 52B33) 52B33 52B33H MD400105/- SEEQ 52B33 52B33H-250

    we vqe 24 d

    Abstract: 52B33 TA 8445 45558 SEEQ 52B33 52B13 72482
    Text: / 52B13/52B23/52B33 52B13H/52B23H/52B33H t r r '7 5 000701 P R E L IM IN A R Y D A TA S H E E T Electrically Erasable ROM March 1983 Features • In p u t L atch es ■ S ingle 5 V S u p p ly ■ S p ecified over \f e e ±10% R ange ■ T TL B yte E ras e/B y te W rite /C h ip C lear


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B13 52B13H 52B23 52B23H 52B33 52B33H 200i0i/40K/383 we vqe 24 d TA 8445 45558 SEEQ 52B33 72482

    SEEQ 52B33

    Abstract: 52B33 DQ52B33 seeq52b33 seeq 52b33 eeprom
    Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Description Features • High Write Endurance Over Temperature SEEQ's 52B33 is a 8 1 9 2 x 8 b it,5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70°C temperature range. Data


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    PDF 52B33/52B33H 52B33/52B33H; 52B33H 52B33 8192x8 MD400008/B SEEQ 52B33 DQ52B33 seeq52b33 seeq 52b33 eeprom

    Untitled

    Abstract: No abstract text available
    Text: 52B13/52B23/52B33 52B13H/52B23H/52B33H PR O D U C T D ES C R IPTIO N Electrically Erasable ROM Features Input Latches • ■ Single 5V Supply ■ Specified over Vq c ±10% Range m TTL Byte Erase/Byte W rite/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B23 52B23H 52B33

    SEEQ 52B33

    Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
    Text: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B13 52B13H 52B23 52B23H 52B33 52B33H 200101/40K/383 SEEQ 52B33 52B23 memory WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S

    Untitled

    Abstract: No abstract text available
    Text: eeeo 52B33/52B33H 52B33/52B33H 64K Electrically Erasable PROM October 1989 extended temperature range respectively. They have input latches on all addresses, data, and control chip and output lines. In addition, for applications requiring fast byte write time (1 ms), an 52B33H and 52B33H are


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    PDF M52B33/M52B33H: E52B33/E52B33H: 52B33H) 52B33) Time--250 M52B33/M52B33H E52B33/E52B33H E52B33H M52B33H E52B33H/E52B33H

    27C512

    Abstract: 28C64 EPROM programmer Winbond 27c512 27C256 27PC512 st 27c256b 2864A 27pc256 32 pin plcc socket to dil 27c65
    Text: AD50/62 - Package Converters for E E PROMs and FLASH etc (PLCC) Q u C j j lP Page 1 of 5 PRODUCX d a t a sh eet AD62 and AD50 Package Converters for E(E)PROMs and FLASH etc (PLCC) Product Code Pins on skt Pins on Base Wiring Code Package Base pitch” Miscellaneous


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    PDF AD50/62 com/ad62 27C128, 27C256, 27C512, 27HC256 27C513, 27C512 28C64 EPROM programmer Winbond 27c512 27C256 27PC512 st 27c256b 2864A 27pc256 32 pin plcc socket to dil 27c65

    EEPROM 2864 ATMEL

    Abstract: 2864 atmel ATMEL 350 28C64 28C65 seeq 28C65-300 AT28C64F-25 at28cs4 atmel 28c65 28C64B-25
    Text: - 28C 64 X Ü £ £ °C -f -y -f- y / TAAC nax (ns) TCAC nax (ns) TOH max (ns) TOE max (ns j # tt W, £ TOD max (ns) A I DD/STANDBY VDD (V) (mA) VIL max (V) aj VIH min (V) Ci max (PF) m/m a V O L / I VOL max (V/mA) t at V O H / IVOH min (V/mA) Co max <PF)


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    PDF 28C64-250 28C64-300 28C64-350 28C64A-25 28C64B-12 AT28HC64-12 AT28HC64-120 192X8) 28PIN EEPROM 2864 ATMEL 2864 atmel ATMEL 350 28C64 28C65 seeq 28C65-300 AT28C64F-25 at28cs4 atmel 28c65 28C64B-25

    ATT ORCA fpga

    Abstract: LSR 2C12
    Text: Data Sheet April 1995 ^A T& T Microelectronics Optimized Reconfigurable Cell Array ORCA 2C Series Field-Programmable Gate Arrays Features Description • High-performance, cost-effective 0.5 pm technology (four-inplit look-up table delay less than 3.6 ns)


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    PDF ATT2C04, ATT2C06, ATT2C08, ATT2C10, ATT2C12, ATT2C15, ATT2C26, ATT2C40. DS95-031 DS94-132FPGA) ATT ORCA fpga LSR 2C12

    d774

    Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
    Text: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT


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    PDF 27C5I2A 27C0I0 27C020 27C040 98C64 28I6A 27C64 27HC64 27HC64I 27HC642 d774 d778 b778 58C65 08CB 58c256 df4a SIGNETICS 87C256 57C49B

    eeprom 2816

    Abstract: 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864
    Text: SEEQ TECHNOLOGY EEPROM CROSS REFERENCE Alternate Manufacturer Part # EEPROM Configuration SEEQ Part # AMD AMD AMD Atmel Atm el Atmel Atmel Atmel Atm el Atmel Atmel Atmel Atm el Atm el Atm el Atmel Atmel Cypress Cypress Cypress Exel Exel Exel Exel Intel Intel


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    PDF 2864B AT28HC16 AT28C64 AT28C64E AT28C64X AT28HC64 AT28PC64 AT28C64F AT28C2S6 AT28C256F eeprom 2816 2816A eeprom Atmel eeprom Cross Reference eeprom Cross Reference EEPROM 2864 INTEL 28C64 EEPROM xicor 28C64 Xicor 28C010 Xicor 2864 intel 2864

    SEEQ

    Abstract: seeq eeprom SEEQ 52B33 52B33 E52B33H M52B33 M52B33H H250B TA41
    Text: 52B33/52B33H 52B33/52B33H 64K Electrically Erasable P R O M October 1989 extended temperature range respectively. They have input latches on all addresses, data, and control chip and output lines. In addition, for applications requiring fast byte write time (1 ms), an 52B33H and 52B33H are


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    PDF M52B33/M52B33H E52B33/E52B33H M52B33/M52B33H: E52B33/E52B33H: 52B33H' 52B33) M52B33 andE52B33 8192x8 52B33 SEEQ seeq eeprom SEEQ 52B33 E52B33H M52B33H H250B TA41

    SEEQ 52B33

    Abstract: No abstract text available
    Text: 52B33 Memory Products 003785 z: * Rockwell : ^ °o h 64K 8K X 8 ' FEATURES • • • • • • • • Input latches 8192 x 8 organization Single 5V ±10% supply TTL byte erase/byte write 9 ms byte erase/byte write 10,000 erase/write cycles per byte


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    PDF R52B33 R52B33 J22196 SEEQ 52B33

    Untitled

    Abstract: No abstract text available
    Text: M 52B 33/M 52B 33H 52B33/52B33H 64K Electrically Erasable PROM October 1987 Features m 5 V ± 1 0 % V Cc m 1 ms 52B 33H or 9 ms (52B 33) TTL Byte Erase/Byte Write • Power Up/Down Protection m DiTrace ■ Fast Read Access Time—250 ns ■ Infinite Number of Read Cycles


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    PDF E52B33/E52B33H 52B33H

    Untitled

    Abstract: No abstract text available
    Text: 52B33/52B33H 52B33/52B33H 64K Electrically Erasable PROM October 1989 extended temperature range respectively. They have input latches on all addresses, data, and control chip and output lines. In addition, for applications requiring fast byte write time (1 ms), an 52B33H and 52B33H are


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    PDF M52B33/M52B33H E52B33/E52B33H E52B33H M52B33H M52B33/M52B33H: E52B33/E52B33H: MD400009/C 52B33

    X2816

    Abstract: 6502 CPU architecture block diagram TF 6221 HEN LED display rm65 Seiki STP H 200 R6530 hall marking code A04 vacuum tube applications data book National Semiconductor Linear Data Book Futaba 9 bt 26
    Text: $5.00 1984 DATA B O O K Second Edition Rockwell International Semiconductor Products Division Rockwell International Corporation 1984 All Rights Reserved Printed in U.S.A. Order No. 1 March, 1984 Rockwell Semiconductor Products Division is headquartered in Newport Beach,


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    PDF

    DM52B13

    Abstract: intel 2816A 52B13 2816A eeprom seeq 52b13 eeprom 2816A INTEL 2816 SEEQ 5213
    Text: SEE<3 T E C H N O L O G Y INC M2E I B 011^233 0003037 2 * S E E 52B13/52B13H 16K Electrically Erasable PROM T-HL-iZ-i-l _ August 1991 Description Features • ■ m ■ ■ ■ ■ ■ ■ ■ Mlltary, Extended and Commercial Temperature


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    PDF 52B13/52B13H 52B13 52B13H 21Vpulse) 52B13. MD400104/- DM52B13 intel 2816A 2816A eeprom seeq 52b13 eeprom 2816A INTEL 2816 SEEQ 5213