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    52B33H Price and Stock

    Vishay Semiconductors BZT52B33-HE3-08

    DIODE ZENER 33V 410MW SOD123
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    DigiKey BZT52B33-HE3-08 Digi-Reel 8,948 1
    • 1 $0.18
    • 10 $0.121
    • 100 $0.18
    • 1000 $0.05551
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    BZT52B33-HE3-08 Cut Tape 8,948 1
    • 1 $0.18
    • 10 $0.121
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    • 1000 $0.05551
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    BZT52B33-HE3-08 Reel 6,000 3,000
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    Micro Commercial Components BZT52B33HE3-TP

    500MW ZENER SOD-123
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    DigiKey BZT52B33HE3-TP Cut Tape 2,992 1
    • 1 $0.25
    • 10 $0.178
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    BZT52B33HE3-TP Digi-Reel 2,992 1
    • 1 $0.25
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    • 1000 $0.052
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    BZT52B33HE3-TP Reel 3,000
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    Mouser Electronics BZT52B33HE3-TP
    • 1 $0.26
    • 10 $0.182
    • 100 $0.089
    • 1000 $0.052
    • 10000 $0.034
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    Comchip Technology Corporation Ltd BZT52B33-HF

    DIODE ZENER 500MW 33V 2% SOD-123
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    DigiKey BZT52B33-HF Reel 3,000
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    Mouser Electronics BZT52B33-HF
    • 1 $0.24
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    • 100 $0.08
    • 1000 $0.047
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    NAC BZT52B33-HF 3,000
    • 1 $0.05
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    • 10000 $0.028
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    Comchip Technology Corporation Ltd ABZT52B33-HF

    DIODE ZENER 33V 500MW SOD123
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey ABZT52B33-HF Reel 3,000
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    Mouser Electronics ABZT52B33-HF
    • 1 $0.38
    • 10 $0.263
    • 100 $0.133
    • 1000 $0.081
    • 10000 $0.055
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    NAC ABZT52B33-HF 3,000
    • 1 $0.12
    • 10 $0.12
    • 100 $0.12
    • 1000 $0.12
    • 10000 $0.05
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    Vishay Semiconductors BZT52B33-HE3-18

    DIODE ZENER 33V 410MW SOD123
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    DigiKey BZT52B33-HE3-18 Reel
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    52B33H Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    52B33H-200 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-200 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33/H-250 Seeq Technology 8K x 8 nMOS EPROM Memory Scan PDF
    52B33H-250 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-250 Seeq Technology Electrically Erasable ROM Scan PDF
    52B33H-300 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-350 Seeq Technology 8K x 8 CMOS EEPROM Memory Scan PDF
    52B33H-350 Seeq Technology Electrically Erasable ROM Scan PDF

    52B33H Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HD637B01VOP

    Abstract: HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257
    Text: AF−9700 SERIES DEVICE LIST AF−9704 EPROM AF−9705 MOS AF−9706 EPROM AF−9707 PC AF−9721 GANG PROGRAMMER


    Original
    PDF AF-9700 24DIP 28DIP HD637B01VOP HD63701VOP HD63705VOP hd63701xop HD637A01VOP HD64F3048F16 MB8516 HD637B01YOP HD63701YOP lh57257

    ae29F2008

    Abstract: ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764
    Text: SALES/INFORMATION HOTLINE: +44 0 1226 767404 GLV32 DEVICE SUPPORT LIST ICE Technology Ltd August 30 2001 DIP devices of 32 pins or less are supported without the need of ANY adapter. Adapter number (see adapter list). Required for PLCC, SOIC or greater than 48 pins.


    Original
    PDF GLV32 Am27C010 Am27C020 Am27C128 Am27C512 Am27C64 Am27H256 Am27LV010 Am27LV010B Am27LV020 ae29F2008 ATMEL eeprom 2816A rom AE29f2008 HN462732G D27C64 AT27C64 ASD AE29F2008 d27C128 Toshiba tmm24128 HN2764

    vqc 10

    Abstract: 52B13 52B33 SEEQ 52B33
    Text: 52B13/52B23/52B33 52B13H/52B23H/52B33H Electrically Erasable R O M March 1983 P R O D U C T D E S C R IP T IO N Features • Input Latches ■ Single 5V Supply ■ Specified over V cc ±10% Range m TTL Byte Erase/Byte Write/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B13 52B13H 52B23 52B23H 52B33 52B33H vqc 10 SEEQ 52B33

    SEEQ 52B33

    Abstract: seeq52b33 seeq eeprom
    Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Features Description • SEEQ’s 52B33 is a 8 1 9 2 x8 bit, 5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70'JC temperature range. Data retention is specified to be greater than 10 years. The


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    PDF 52B33/52B33H 52B33/52B33H; 52B33H 52B33 52B33 200ns MD400008/B SEEQ 52B33 seeq52b33 seeq eeprom

    SEEQ 52B33

    Abstract: 52B33H-250
    Text: MSE D SEEû TECHNOLOGY INC • 011^33 00D3D4S 1 H SEE 52B33/52B33H 64K Electrically Erasable PROM August 1991 Features Description ■ SEEQ's 52B33 and 52B33H are 8192 x 8 bit, 5V electri­ cally erasable programmable read only memories EEPROMs which are available over all the industry


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    PDF 00D3D4S 52B33/52B33H 52B33H) 52B33) 52B33 52B33H MD400105/- SEEQ 52B33 52B33H-250

    we vqe 24 d

    Abstract: 52B33 TA 8445 45558 SEEQ 52B33 52B13 72482
    Text: / 52B13/52B23/52B33 52B13H/52B23H/52B33H t r r '7 5 000701 P R E L IM IN A R Y D A TA S H E E T Electrically Erasable ROM March 1983 Features • In p u t L atch es ■ S ingle 5 V S u p p ly ■ S p ecified over \f e e ±10% R ange ■ T TL B yte E ras e/B y te W rite /C h ip C lear


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B13 52B13H 52B23 52B23H 52B33 52B33H 200i0i/40K/383 we vqe 24 d TA 8445 45558 SEEQ 52B33 72482

    SEEQ 52B33

    Abstract: 52B33 DQ52B33 seeq52b33 seeq 52b33 eeprom
    Text: 52B33/52B33H 64K Electrically Erasable PROM October 1987 Description Features • High Write Endurance Over Temperature SEEQ's 52B33 is a 8 1 9 2 x 8 b it,5 volt electrically erasable programmable read only memory EEPROM which is specified over a 0°C to 70°C temperature range. Data


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    PDF 52B33/52B33H 52B33/52B33H; 52B33H 52B33 8192x8 MD400008/B SEEQ 52B33 DQ52B33 seeq52b33 seeq 52b33 eeprom

    Untitled

    Abstract: No abstract text available
    Text: 52B13/52B23/52B33 52B13H/52B23H/52B33H PR O D U C T D ES C R IPTIO N Electrically Erasable ROM Features Input Latches • ■ Single 5V Supply ■ Specified over Vq c ±10% Range m TTL Byte Erase/Byte W rite/Chip Clear ■ 1 ms or 10 ms Byte Erase/Byte Write


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B23 52B23H 52B33

    SEEQ 52B33

    Abstract: 52B23 memory 52B13 WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S 52B33
    Text: v. O c <F V 000701 r ^ %>' ,J> 7 52 B 13/ 52 B 23/ 52B 33 52B 13H / 52 B 23 H / 52 B 33H Electrically Erasable RO M March 1983 P R E L IM IN A R Y D A T A S H E E T Features • Input Latches ■ ■ ■ ■ ■ ■ ■ ■ th e o th e r d e v ic e s in th e fa m ily re q u ire o n ly a T TL


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    PDF 52B13/52B23/52B33 52B13H/52B23H/52B33H 52B13 52B13H 52B23 52B23H 52B33 52B33H 200101/40K/383 SEEQ 52B33 52B23 memory WE VQE 11 E WE VQE 24 E 19Jl WE VQE 23 E SEEQ 52B23 5252 S

    Untitled

    Abstract: No abstract text available
    Text: eeeo M52B33/52B33H E52B33/52B33H 64K Electrically Erasable PROM October 1989 extended temperature range respectively. They have input latches on all addresses, data, and control chip and output lines. In addition, for applications requiring fast byte write time (1 ms), an 52B33H and 52B33H are


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    PDF M52B33/M52B33H: E52B33/E52B33H: 52B33H) 52B33) Time--250 M52B33/M52B33H E52B33/E52B33H E52B33H M52B33H E52B33H/E52B33H

    EEPROM 2864 ATMEL

    Abstract: 2864 atmel ATMEL 350 28C64 28C65 seeq 28C65-300 AT28C64F-25 at28cs4 atmel 28c65 28C64B-25
    Text: - 28C 64 X Ü £ £ °C -f -y -f- y / TAAC nax (ns) TCAC nax (ns) TOH max (ns) TOE max (ns j # tt W, £ TOD max (ns) A I DD/STANDBY VDD (V) (mA) VIL max (V) aj VIH min (V) Ci max (PF) m/m a V O L / I VOL max (V/mA) t at V O H / IVOH min (V/mA) Co max <PF)


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    PDF 28C64-250 28C64-300 28C64-350 28C64A-25 28C64B-12 AT28HC64-12 AT28HC64-120 192X8) 28PIN EEPROM 2864 ATMEL 2864 atmel ATMEL 350 28C64 28C65 seeq 28C65-300 AT28C64F-25 at28cs4 atmel 28c65 28C64B-25

    d774

    Abstract: d778 b778 58C65 08CB 27HC642 58c256 df4a SIGNETICS 87C256 57C49B
    Text: 40M I0I Device Support Rev 14.2 4 1M10 i Device Support (Rev 15.0) 42M I0I Device Support (Rev 14.1) (November 1994) Please note: Any device indicated by => is a new addition to the ydevice support list. S T A G PROORAMMCR3 Stag Programmers Limited Silver Court Watchmead Welwyn Garden City Herts AL7 ILT


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    PDF 27C5I2A 27C0I0 27C020 27C040 98C64 28I6A 27C64 27HC64 27HC64I 27HC642 d774 d778 b778 58C65 08CB 58c256 df4a SIGNETICS 87C256 57C49B

    SEEQ

    Abstract: seeq eeprom SEEQ 52B33 52B33 E52B33H M52B33 M52B33H H250B TA41
    Text: M52B33/52B33H E52B33/52B33H 64K Electrically Erasable P R O M October 1989 extended temperature range respectively. They have input latches on all addresses, data, and control chip and output lines. In addition, for applications requiring fast byte write time (1 ms), an 52B33H and 52B33H are


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    PDF M52B33/M52B33H E52B33/E52B33H M52B33/M52B33H: E52B33/E52B33H: 52B33H' 52B33) M52B33 andE52B33 8192x8 52B33 SEEQ seeq eeprom SEEQ 52B33 E52B33H M52B33H H250B TA41

    Untitled

    Abstract: No abstract text available
    Text: M 52B 33/M 52B 33H E52B33/52B33H 64K Electrically Erasable PROM October 1987 Features m 5 V ± 1 0 % V Cc m 1 ms 52B 33H or 9 ms (52B 33) TTL Byte Erase/Byte Write • Power Up/Down Protection m DiTrace ■ Fast Read Access Time—250 ns ■ Infinite Number of Read Cycles


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    PDF E52B33/E52B33H 52B33H

    DM52B13

    Abstract: intel 2816A 52B13 2816A eeprom seeq 52b13 eeprom 2816A INTEL 2816 SEEQ 5213
    Text: SEE<3 T E C H N O L O G Y INC M2E I B 011^233 0003037 2 * S E E 52B13/52B13H 16K Electrically Erasable PROM T-HL-iZ-i-l _ August 1991 Description Features • ■ m ■ ■ ■ ■ ■ ■ ■ Mlltary, Extended and Commercial Temperature


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    PDF 52B13/52B13H 52B13 52B13H 21Vpulse) 52B13. MD400104/- DM52B13 intel 2816A 2816A eeprom seeq 52b13 eeprom 2816A INTEL 2816 SEEQ 5213