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    2SJ306

    Abstract: No abstract text available
    Text: Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ306]


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    PDF EN4316 2SJ306 2SJ306] O-220ML 2SJ306

    GT 4317

    Abstract: EN4317A 2063A taito 2SJ307 EN4317
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]


    Original
    PDF EN4317A 2SJ307 2SJ307] O-220ML 40599TS/53093TH AX-9094 GT 4317 EN4317A 2063A taito 2SJ307 EN4317

    2SJ307

    Abstract: No abstract text available
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]


    Original
    PDF EN4317A 2SJ307 2SJ307] O-220ML 2SJ307

    GT 4317

    Abstract: EN4317A 2SJ307 EN4317 43171
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ307]


    Original
    PDF EN4317A 2SJ307 2SJ307] O-220ML GT 4317 EN4317A 2SJ307 EN4317 43171

    2SJ306

    Abstract: No abstract text available
    Text: Ordering number:EN4316 P-Channel Silicon MOSFET 2SJ306 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ306]


    Original
    PDF EN4316 2SJ306 2SJ306] O-220ML 2SJ306

    2SJ308

    Abstract: AX-9095
    Text: Ordering number:EN4318 P-Channel Silicon MOSFET 2SJ308 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · Low-voltage drive. · Micaless package facilitating mounting. unit:mm 2063A [2SJ308]


    Original
    PDF EN4318 2SJ308 2SJ308] O-220ML 2SJ308 AX-9095

    m 43171

    Abstract: 2sj307 43171
    Text: 2SJ307 AP A d v a n c e d P e rfo rm a n c e Series V D3S= 2 5 0 V 2063 P Channel Power M OSFET £ 4 3 17 F e a tu re s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. •Micaless package facilitating mounting. A bsolute M axim um R atings at Ta = 25°C


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    PDF 2SJ307 10//S 53093TH AX-9094 m 43171 2sj307 43171

    2SJ307

    Abstract: No abstract text available
    Text: Ordering number:EN4317A P-Channel Silicon MOSFET 2SJ307 s a H yoi Ultrahigh-Speed Switching Applications Features Package Dimensions • L ow O N resistance. umt:mm • U ltrahigh-speed sw itch in g. 2063A • L o w -voltage drive. [2SJ307] • M ica less package facilitatin g m ounting.


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    PDF EN4317A 2SJ307 2SJ307] O-220ML ET2220D 2SJ307

    43171

    Abstract: EN4317 2SJ307
    Text: Ordering num ber: EN4 3 1 7 _ 2SJ307 P-Channel MOS Silicon FET Very High-Speed Switching Applications F e a tu r e s • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • M icaless package facilitating mounting. b so lu te M axim um R a tin g s a t Ta = 25°C


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    PDF EN4317 2SJ307 100ers 43171 EN4317 2SJ307

    1C00

    Abstract: 2SJ306
    Text: Ordering num ber: E N 4316 2SJ306 No.4316 P-Channel MOS Silicon FET Very High-Speed Switching Applications F eatu re s •Low ON resistance. ■Very high-speed switching. ■Low-voltage drive. ■Micaless package facilitating mounting. A bsolute M axim um R atin g s a t Ta = 25°C


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    PDF EN4316 2SJ306 1C00 2SJ306

    Diode U160

    Abstract: 2SJ308
    Text: Ordering number : EN 4 3 1 8 2SJ308 No.4318 P-Channel MOS Silicon FET SANYO i Very High-Speed Switching Applications F eatures • Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating mounting. A bsolute Maximum Ratings at Ta = 25°C


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    PDF 2SJ308 Diode U160 2SJ308

    2SJ308

    Abstract: No abstract text available
    Text: 2SJ308 AP A d v a n c e d P e rfo rm a n ce Series 2063 V Ds s = 2 5 0 V P Channel Power M OSFET •£■»318 F e a tu re s ■Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Micaless package facilitating m ounting. b so lu te M ax im u m R a tin g s a t Ta = 25°C


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    PDF 2SJ308 53093TH AX-9095 2SJ308