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    Skyworks Solutions Inc SKY67150-396LF-EVB (380-530 MHz)

    Sub-GHz Development Tools 380MHz-530MHz Eval Board
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    Mouser Electronics SKY67150-396LF-EVB (380-530 MHz)
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    Ecliptek Corporation ECX0122-38.000530MHZ

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    Bristol Electronics ECX0122-38.000530MHZ 343
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    TDK Corporation MEM2012S201RT001

    EMI Filter Circuits 200MHz
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    TTI MEM2012S201RT001 Reel 4,000 4,000
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    Seiko Epson Corporation SG51PTJ425530MHZ

    Electronic Component
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    ComSIT Distribution SG51PTJ425530MHZ 125
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    530MHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    VF10BUS

    Abstract: A17511
    Text: VF10BUS 注文コード No. N A 1 7 5 1 三洋半導体データシート N VF10BUS 1 Channel EMI Filter with ESD Protection 特長 ・ EMI Filter 1 channel 対応 fc=530MHzIEC61000-4-2 にて接触放電 8kV 保証 ・ 超小型・薄型パッケージ (1.0mm x 0.6mm × 0.27mm) ・ ハロゲンフリー対応


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    PDF VF10BUS 530MHz) IEC61000-4-2 150pF, IT15564 IT15364 IT15565 IT15566 VF10BUS A17511

    complementary symmetry amplifier 2-30 MHz ssb driver applications

    Abstract: 513-MHz MGA-633P8 AT224-1 k 3366 57 LTC5584 LTC5588-1 LTC6409
    Text: LTC5584 30MHz to 1.4GHz IQ Demodulator with IIP2 and DC Offset Control Description Features I/Q Bandwidth of 530MHz or Higher n High IIP3: 31dBm at 450MHz, 28dBm at 900MHz n High IIP2: 70dBm at 450MHz, 65dBm at 900MHz n User Adjustable IIP2 to >80dBm n User Adjustable DC Offset Null


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    PDF 530MHz 31dBm 450MHz, 28dBm 900MHz 70dBm 65dBm 80dBm complementary symmetry amplifier 2-30 MHz ssb driver applications 513-MHz MGA-633P8 AT224-1 k 3366 57 LTC5584 LTC5588-1 LTC6409

    rd70huf2

    Abstract: RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049
    Text: < Silicon RF Power Semiconductors > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 3.61 2.40 3 4 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION For output stage of high power amplifiers in VHF/UHF


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    PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 75Wtyp, 530MHz 84Wtyp, 175MHz RD70 HUF2 RD70HUF w18 transistor MITSUBISHI RF POWER MOS FET rd70 2x500mA AN-VHF-049

    M68732EH

    Abstract: No abstract text available
    Text: MITSUBISHI RF POWER MODULE M68732EH SILICON MOS FET POWER AMPLIFIER, 520-530MHz, 6.5W, FM PORTABLE RADIO Dimensions in mm OUTLINE DRAWING BLOCK DIAGRAM 30±0.2 2 26.6±0.2 21.2±0.2 3 2-R1.5±0.1 1 4 5 1 2 3 4 5 0.45 6±1 13.7±1 PIN: 1 Pin : RF INPUT 2 VGG : GATE BIAS SUPPLY


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    PDF M68732EH 520-530MHz, 17dBm 520MHz 530MHz M68732EH

    Untitled

    Abstract: No abstract text available
    Text: VF10BUS Ordering number : ENA1751 SANYO Semiconductors DATA SHEET VF10BUS 1 Channel EMI Filter with ESD Protection Features • • EMI Filter 1 channel fc=530MHz Ulta-small thin size package (1.0mmx0.6mm×0.27mm) • • Contact discharge 8kV guarantee (IEC61000-4-2)


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    PDF VF10BUS ENA1751 530MHz) IEC61000-4-2) A1751-3/3

    mitsubishi L200

    Abstract: c14 fet
    Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)


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    PDF RD35HUF2 175MHz, 530MHz, 43Wtyp, 530MHz 45Wtyp, 175MHz mitsubishi L200 c14 fet

    transistor W66

    Abstract: w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18
    Text: < Silicon RF Power MOS FET Discrete > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 1 4 RD35HUF2 Lot No.-G ○ FEATURES 6 3.63 3.10 0.22 3.15 8 7 a 4 3.65 2.40 3 0.10 3. 70 5 2 1 6 5 RD35HUF2 Pin 1. SOURCE (COMMON)


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    PDF RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz Oct2011 transistor W66 w18 transistor TRANSISTOR ML1 transistor w18 57 small W08 transistor transistor w08 405MHz mitsubishi L200 transistor marking w08 TRANSISTOR w18

    HA5022

    Abstract: HA5022EVAL HFA1205 HFA1245 HFA1245IB HFA1245IP
    Text: HFA1245 S E M I C O N D U C T O R Dual, 530MHz, Low Power, Video Operational Amplifier with Disable November 1996 Features Description • Low Supply Current. . . . . . . . . . . . . . . . 5.8mA/Op Amp The HFA1245 is a dual, high speed, low power current feedback amplifier built with Harris’ proprietary complementary


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    PDF HFA1245 530MHz, HFA1245 -73dB HA5022 HA5022EVAL HFA1205 HFA1245IB HFA1245IP

    RD70 HUF2

    Abstract: W105 TRANSISTOR ML1 RD70HUF2
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' 0.60 2 FEATURES 3 RD70 Lot HUF2 No-G 6 9 a 4 3.61 2.40 3 2 1 6 5 RD70HUF2 13.50 Lot No-G 8 7 APPLICATION For output stage of high power amplifiers in VHF/UHF


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    PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 RD70 HUF2 W105 TRANSISTOR ML1

    VF10BUS

    Abstract: No abstract text available
    Text: VF10BUS Ordering number : ENA1751 SANYO Semiconductors DATA SHEET VF10BUS 1 Channel EMI Filter with ESD Protection Features • • EMI Filter 1 channel fc=530MHz Ulta-small thin size package (1.0mmx0.6mm×0.27mm) • • Contact discharge 8kV guarantee (IEC61000-4-2)


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    PDF VF10BUS ENA1751 530MHz) IEC61000-4-2) A1751-3/3 VF10BUS

    177J

    Abstract: MOS 3020 RD35HUF2 w18 transistor
    Text: < Silicon RF Power Semiconductors > RD35HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 35W 24.60 18.00 a' 0.10 APPLICATION 4 RD35HUF2 Lot No.-G ○ FEATURES 5 6 3.63 0.22 3.15 8 7 a 3.10 2.40 4 3.65 3 0.10 2 1 6 5 RD35HUF2 Pin 1. SOURCE COMMON


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    PDF RD35HUF2 175MHz, 530MHz, RD35HUF2 43Wtyp, 530MHz 45Wtyp, 175MHz 177J MOS 3020 w18 transistor

    rd70huf2

    Abstract: RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33
    Text: < Silicon RF Power MOS FET Discrete > RD70HUF2 RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 530MHz, 70W 24.60 18.00 DESCRIPTION a' RD70 Lot HUF2 No-G ○ 6 9 a 7 8 3.63 3.10 4 3.61 2.40 3 2 1 RD70HUF2 13.50 ○ 8 Lot No-G 7 ○ 6 5 APPLICATION


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    PDF RD70HUF2 175MHz, 530MHz, RD70HUF2 75Wtyp, 530MHz 84Wtyp, 175MHz Oct2011 RD70 HUF2 MITSUBISHI RF POWER MOS FET rd70 Mitsubishi Plastics RD70HUF transistor c33

    Untitled

    Abstract: No abstract text available
    Text: OPA688 OPA 688 OPA 688 For most current data sheet and other product information, visit www.burr-brown.com Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING


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    PDF OPA688 530MHz OPA689 OPA688

    advantage of fm transmitter two stage

    Abstract: audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S
    Text: ES D5 V3 L 1B and E SD 3V 3S 1 B Ge ner al P urpos e an d A udio E SD Pro t ecti on using E S D5 V3L 1B and ES D3 V3 S 1B TV S Di odes Applic atio n N ote A N 277 Revision: Rev. 1.1 2011-10-09 RF and P r otecti on D evic es Edition 2011-10-09 Published by


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    PDF AN277, AN277 advantage of fm transmitter two stage audio bluetooth transmitter 3.5mm AN277 ESD Diodes Mifare* capacitor inductor epcos mip i mobile 3.5mm jack ESD3V3S

    CDFP3-F14

    Abstract: la 4507 HS SMD 5962R9858101VXC HS-1254RH HS9-1254RH-Q
    Text: HS-1254RH PRELIMINARY Radiation Hardened, High Speed, Low Power Dual Operational Amplifier with Disable April 1998 Features Description • QML Qualified Per MIL-PRF-38535 Requirements The HS-1254RH is a ±5V, Rad Hard, monolithic, dual, current feedback amplifier that provides highly reliable


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    PDF HS-1254RH MIL-PRF-38535 HS-1254RH CDFP3-F14 la 4507 HS SMD 5962R9858101VXC HS9-1254RH-Q

    CDMA450

    Abstract: KFX6555FR
    Text: SAW FILTER KFX6555FR TECHNICAL DATA SPECIFICATIONS FOR SAW DUPLEXER RF Duplexer for CDMA450 A C B High stability and reliability. No adjustment. Low insertion loss and deep stop band attenuation. DIM MAXIMUM RATINGS A B C D E 3.7 D UNIT Input Signal Level


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    PDF KFX6555FR CDMA450 1700MHz 2000MHz CDMA450 KFX6555FR

    ADS902

    Abstract: No abstract text available
    Text: OPA688 OPA 688 OPA 688 Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER TM FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● ● ● ● ● HIGH LINEARITY NEAR LIMITING FAST RECOVERY FROM OVERDRIVE: 2.4ns LIMITING VOLTAGE ACCURACY: ±15mV


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    PDF OPA688 530MHz OPA689 OPA688 29pF/foot RG-58) ADS902

    Untitled

    Abstract: No abstract text available
    Text: 1/1 001-02 / 20050303 / e9616_mem_t_s1.fm EMC Components MEM-T Series MEM2012T Type 3-Terminal Filters for Signal Line and DC Power Line SMD FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability.


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    PDF MEM2012T priT35R0T0S1 MEM2012T50R0T0S1 MEM2012T101RT0S1 MEM2012T201RT0S1 70MHz 90MHz 200MHz 400MHz

    Untitled

    Abstract: No abstract text available
    Text: 1/2 3-terminal Filters(SMD) For Signal Line Conformity to RoHS Directive MEM Series MEM2012T-S1 Type FEATURES • Multilayer chip EMC filter utilizing a T-type circuit. • Entirely monolithic structure results in high reliability. • Due to closed magnetic circuit architecture, high-density installation becomes possible, and crosstalk generation is prevented.


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    PDF MEM2012T-S1 MEM2012T MEM2012T201RT0S1 MEM2012T101RT0S1 MEM2012T50R0T0S1 MEM2012T35R0T0S1 MEM2012T25R0T0S1

    Untitled

    Abstract: No abstract text available
    Text: 579MHz SAW Filter 26MHz Bandwidth China Electronics Technology Group Corporation No.26 Research Institute SIPAT Co., Ltd. Part Number: LBN57901 www.sipatsaw.com Features � For RF SAW filter � Single-ended operation � Ceramic Surface Mount Package �


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    PDF 579MHz 26MHz LBN57901 2002/95/EC) 592MHz)

    vhf high gain transistor

    Abstract: 2SC606 F VHF amplifier 2SC605 VHF amplifier circuit
    Text: 2SC605,606 2SC605, 606 NPN NPN SILICON TRANSISTOR VHF TV TV Tuner 7 0 a r - 7 ? /M IC R O D IS K s ft S /F E A T U R E S •iV ' fT (530MHz T Y P. £ (2 .5dB TYP. @200MHz) tc j: (3VHF • 7 # —V — A G C z J S f i , VHF TV L t f t i g t £» • B S t e l ? -i


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    PDF 2SC605 2SC605, 200MHz) 530MHz 2SC606 2SC605 vhf high gain transistor F VHF amplifier VHF amplifier circuit

    Untitled

    Abstract: No abstract text available
    Text: & HFA1245 Dual, 530MHz, Low Power, Video Operational Amplifier with Disable November 1996 Features Description • Low Supply Current.5.8mA/Op Amp The HFA1245 is a dual, high speed, low power current feedback amplifier built with Harris’ proprietary complementary


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    PDF -73dB 530MHz HFA1245 530MHz, HFA1245 HFA124S 1750nm 2330nm 483nm

    Burr-Brown HA-5002

    Abstract: KT-350
    Text: B U R R -B R O W N OPA688 Unity Gain Stable, Wideband VOLTAGE LIMITING AMPLIFIER FEATURES APPLICATIONS • • • • • • • • • • • • • • HIGH LINEARITY NEAR LIMITING FAST RECOVERY FROM OVERDRIVE: 2.4ns LIMITING VOLTAGE ACCURACY: ±15mV


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    PDF OPA688 530MHz OPA689 OPA688 OPA689. Burr-Brown HA-5002 KT-350

    Untitled

    Abstract: No abstract text available
    Text: HFA 1245/883 Semiconductor PRELIMINARY Dual, High Speed, Low Power, Video Operational Amplifier with Output Disable Juen 1994 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1.


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    PDF MIL-STD883 HFA1245/883 HFA1245/883