PF10J
Abstract: No abstract text available
Text: O K I SEMI CONDUCTOR GROUP 23E D b?5424D DGOaom 4 »1.55/im Edge-Emitting LED DIP. Module aOE552G • DESCRIPTION OKI OE552G is a 1.55/im edge-emitting LED DIP module with single mode fiber pigtail. Using the OKI EE-LED which featufes high coupling efficiency, single mode fiber output over 8^/W
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5424D
55/im
aOE552G
OE552G
10juW
PF10J
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DS12
Abstract: No abstract text available
Text: O K I Semiconductor MSC23436 A-xxBS 12 /DS 12 4,194,304-Word x 36-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23436A-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access M emory M odule com posed of eight 16-Mb DRAMs 4M x 4 in SOJ packages
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MSC23436A-xxBS
12/PS12
304-Word
36-Bit
MSC23436A-xxBSl2/
16-Mb
72-pin
DS12
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OLD125
Abstract: 2m240
Text: O K I electronic components OLP125 GaAs Infrared Light Emitting Diode GENERAL DESCRIPTION The OLD125 is a high-output G aA s infrared light em ission m indiode sealed with a transparent epoxy resin in a ceramic case. Its light em ission w ave is peaks at 940 nm. Because of its sharp
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OLD125_
OLD125
940nm
OLD125
Ifm/75
2424G
2m240
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SOJ28-P-300-1
Abstract: MSM51V16800B MSM51V16800BSL
Text: O K I Semiconductor MSM5 1V16800B/BSL E2G0074-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The M SM 51V16800B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16800B /B SL achieves high integration, high-speed operation, and
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E2G0074-17-41
MSM51V16800B/BSL
152-Word
MSM51V16800B/BSL
MSM51V16800B
28-pin
MSM51V16800BSL
SOJ28-P-300-1
MSM51V16800BSL
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v17805
Abstract: MSM51V17805BSL msm51v17805b
Text: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B /B SL achieves high integration, high-speed operation, and
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E2G0079-17-41
MSM51V17805B/BSL_
152-Word
MSM51V17805B/BSL
MSM51VI7805B
28-pin
MSM51V17805BSL
v17805
MSM51V17805BSL
msm51v17805b
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Untitled
Abstract: No abstract text available
Text: E2G 1 054-18-62 O K I Semiconductor MD56V62800A 4-Bank x 2,097,152-Word x 8-Bit SY N C H R O N O U S DYNAMIC RAM DESCRIPTION The MD56V62800A is a 4-bank x 2,097,152-word x 8-bit synchronous dynamic RAM, fabricated in Oki's CMOS silicon-gate process technology. The device operates at 3.3 V. The inputs and
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MD56V62800A
152-Word
MD56V62800A
cycles/64
b724B40
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1 17800B_ E 2 G 0043 - 17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117800B is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117800B achieves high integration, high-speed operation, and low-power
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17800B_
152-Word
MSM5117800B
28-pin
cycles/32
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Untitled
Abstract: No abstract text available
Text: E2D0017-27-42 O K I Semiconductor M S M 6652/53/54/55/56-xxx, M SM 6652A/53A/ 54A/55A/56A/58A-xxx, MSM66P54-XX, MSM66P56-xx Under development , MSM6650 Internal Mask ROM Voice Synthesis 1C, Internal One-Time-Programmable (OTP) ROM Voice Synthesis 1C, External ROM Drive Voice Synthesis 1C
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E2D0017-27-42
6652/53/54/55/56-xxx,
652A/53A/
4A/55A/56A/58A-xxx,
MSM66P54-XX,
MSM66P56-xx
MSM6650
MSM6650
MSM6375
theMSM6650familymembersoffer
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V17805 B/BSL_ E 2 G 0 0 7 9 -1 7 -4 1 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V17805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V17805B /B SL achieves high integration, high-speed operation, and
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1V17805
152-Word
51V17805B/BSL
MSM51V17805B
28-pin
MSM51V17805BSL
152-w
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MSM51V16805B
Abstract: MSM51V16805BSL
Text: O K I Semiconductor MSM5 1V16805B/BSL_ E2G0077-17-41 2,097,152-Word x 8-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The M SM 51V16805B/BSL is a 2,097,152-word x 8-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM51V16805B /B SL achieves high integration, high-speed operation, and
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E2G0077-17-41
MSM51V16805B/BSL_
152-Word
MSM51V16805B/BSL
MSM51V16805B
28-pin
MSM51V16805BSL
MSM51V16805BSL
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MSM5265GS-BK
Abstract: MSM5265GS-K 6 pin 2D 1002 MSM5265GS "LCD Drivers" 12 pin 7 segment display pin configuration oki lcd driver MSM5265 QFP100-P-1420-BK QFP100-P-1420-K
Text: O K I Semiconductor MSM5265 8O-DOT LCD DRIVER GENERAL DESCRIPTION The M SM 5265 is an LC D driver w hich can directly drive up to 80 segm ents in the static display mode, w hile 160 segm ents in the 1 / 2 duty dynam ic display mode. The M SM 5265 is fabricated w ith low pow er C M O S m etal gate technology, consisting of a 160stage shift register, 160-bit data latch, 80 sets of LC D drivers and a com m on signal generator.
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MSM5265_
MSM5265
160-stage
160-bit
MSM5265
L7E4240
0022Tbl
MSM5265GS-BK
MSM5265GS-K
6 pin 2D 1002
MSM5265GS
"LCD Drivers"
12 pin 7 segment display pin configuration
oki lcd driver
QFP100-P-1420-BK
QFP100-P-1420-K
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414256-10
Abstract: 414256 MSM414256-10 MSM414256-12 MSM414256-12RS
Text: O K I S E M I C O N D U C T O R GR O U P ôi OKI » Ë J b 7 E M S M 0 OODSSbt, 5 | ~ ¿.6724240 O K I S E M I C O N D U C T O R G R O U P semiconductor 89D 02566 MSM414256RS 262,144-WORD X ~J7 D 4-BIT DYNAMIC RAM GENERAL DESCRIPTION The MSM414256RS is a new generation dynamic RAM organized as 262,144 words by 4 bits.
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b72ME40
MSM414256RS
144-WORD
MSM414256RS
20-pin
414256-10
414256
MSM414256-10
MSM414256-12
MSM414256-12RS
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MSM41256A
Abstract: MSM6310 256KDRAM oki motor control
Text: O K I Semiconductor MSM6310 PCM RECORDING & PLAYBACK LSI GENERAL DESCRIPTION The MSM6310 is a PCM recording & playback LSI w hich is m anufactured using O ki's low p ow er CMOS silicon gate technology. The MSM6310 is designed for the purp o se of endless loop recording by 8-bit PCM.
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MSM6310
MSM6310
256KW
MSM41256A)
2200Hz
1700Hz
3600Hz
2700Hz
4000Hz
MSM41256A
256KDRAM
oki motor control
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FST 460 transistor
Abstract: 80c85 UTM RESISTOR 210-9 sc2305 Transistor FST 461 QFP44-P-910-V1K Transistor FST 460 MSM6258
Text: O K I Semiconductor ISM6258/MSM6258V ADPCM S P E E C H P R O C E S S O R FO R SO LID ST A T E R E C O R D E R TO C U S T O M ER S FO R NEW C IR C U IT DESIGN For a new circuit design, it is recommended to use not the M SM 6258, but the M SM 6388/ M SM 6588 as described later.
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ISM6258/MSM6258V
6388/M
12-bit
MSM6258
MSM6588.
7542M0
MSM6258/MSM6258V
MSM80C85
b7E4240
FST 460 transistor
80c85
UTM RESISTOR 210-9
sc2305
Transistor FST 461
QFP44-P-910-V1K
Transistor FST 460
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Untitled
Abstract: No abstract text available
Text: O K I electronic components OC340 PHOTO COUPLER GENERAL DESCRIPTION The DC340 is a photo coupler formed by combining a GaAs infrared light emitting diode and a phototransistor. Encased in a 6-pin plastic package, the OC34CI is suitable for such applications as an
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OC340
DC340
OC34CI
E86831
b724aMG
L724E40
2424G
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Untitled
Abstract: No abstract text available
Text: O K I S e m iœ n d u c to r M S M 64 1 6 2 /M S M 6 4 1 6 2 D 4 -B it Single-Chip M icrocontroller DESCRIPTION The M SM 64162/M SM 64162D are high-perform ance CMOS 4-bit, single-chip m icrocontrollers which h av e b u ilt-in 128-n ib b le RA M , 16 I / O 's , b u z z e r o u tp u t, an d 2 4 LC D s e g m e n t d riv e rs . The
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64162/M
64162D
128-n
MSM64162
MSM64162D
22for
72424D
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Untitled
Abstract: No abstract text available
Text: E2G0106-18-42 O K I Semiconductor This,eision:Apr1998 MSM511 6 4 0 0 C_ 4,194,304-Word x 4-Bit D YNAM IC R AM : F A S T P A G E M O D E T Y P E DESCRIPTION The MSM5116400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS
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E2G0106-18-42
MSM511
304-Word
MSM5116400C
26/24-pin
304-w
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CT 1975 - sam
Abstract: CT 1975 sam MSM6373-329 MSM6374-007 TB 2929 Ho PM641
Text: O K I Semiconductor MSM6375/4/3/2-XXX 1 M-bit/512K-bit/256K-bit/128K-bit M ASK ROM S P E E C H SY N T H ESIZ ER G E N E R A L D ESCRIPTIO N The MSM6375 series is an ADPCM speech synthesis LSI utilizing a CMOS speech pro cessor circuit in conjunction with a built-in
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MSM6375/4/3/2-XXX
M-bit/512K-bit/256K-bit/128K-bit
MSM6375
12-bit
MSM6376
b72424D
CT 1975 - sam
CT 1975 sam
MSM6373-329
MSM6374-007
TB 2929 Ho
PM641
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S82V16520
Abstract: 533 BA MS82V16520 QFP100-P-1420-0 AX2002 S82V
Text: E2L0056-28-91 % This version: Sep. 1998 O K I Semiconductor M S82V16 5 2 0 2 62 ,14 4 -W o rd x 3 2 -B it x 2 -B a n k Synchronous G raphics R AM D E S C R IP TIO N The MS82V16520 is a synchronous graphics random access m em ory organized as 256 K w o r d s x 3 2
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E2L0056-28-91
MS82V16520
MS82V16520
72424G
DD275Qti
S82V16520
533 BA
QFP100-P-1420-0
AX2002
S82V
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photo sensor pin diagram
Abstract: OIP101 SCHMIT TRIGGER
Text: O K I electronic components OIP1Q1_ Open Collector Output Photodetector GENERAL DESCRIPTION The OIPlOl is an open collector output photodetector that incorporates a photodiode, amplifier circuit, Schmitt-trigger circuit and a voltage regurator circuit on to a single chip.
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b72M2M0
72MEM0
2424G
photo sensor pin diagram
OIP101
SCHMIT TRIGGER
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Untitled
Abstract: No abstract text available
Text: E2U0044-16-X2 O K I Semiconductor M S M 7 7 0 8 - 0 2 _ Serial Register Interface ADPCM CODEC for Telephone Recording GENERAL DESCRIPTION The MSM7708-02 is a CMOS IC developed for applying to PHS Personal H andyphone System .
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E2U0044-16-X2
MSM7708-02
MSM770802
MSM63V89C
MSM7708-02
MSM6595A-XXX
0024L
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5 1V4 10O/SL 4,194,304-Word x 1-Bit D Y N A M IC RAM DESCRIPTION The MSM 51V4100/SL is a new generation dynam ic RAM organized as 4,194,304-word x 1-bit configuration. The technology used to fabricate the MSM 51V4100/SL is OKI's CMOS silicon gate
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10O/SL
304-Word
51V4100/SL
1024cycles/16m
128ms
MSM51V41OO/SL
72424G
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TfiS SEMICONDUCTOR GROUP
Abstract: MSM514400 MSM514400-10 S4240 24B4G
Text: 4b E D • b7S4240 O K I QODTbDS TfiS B O K I J SEMICONDUCTOR M S M 5 1 4 4 0 0 7 - GROUP V * - 2 3 1,048,576-WORD X 4-BIT DYNAMIC RAM: FAST PAGE MODE TYPE GENERAL DESCRIPTION The M SM 5 1 4 4 0 0 isa new generation dynamic R A M organized as 1,048,576 w ords by 4 bits.
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b724240
MSM514400
576-WORD
MSM514400isa
26-pin
20-pin
msm5144oo-
b75424Q
TfiS SEMICONDUCTOR GROUP
MSM514400-10
S4240
24B4G
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OLD2202
Abstract: 1000 nm light emitting diode 910nm 5424D
Text: O K I electronic components OLP22Q2 GaAIAs Infrared Light Emitting Diode GENERAL DESCRIPTION TheOLD2202 is a superhigh-output GaAIAs infrared light emission diode sealed with an achromatic transparent epoxy resin. Its light emission wave peaks at 910 nm. The OLD2202 can be the most
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OLP22Q2
TheOLD2202
OLD2202
L7542M0
OLD22Q2
b7E424D
Ifm/100
b7S4S40
1000 nm light emitting diode
910nm
5424D
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