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    55NS Search Results

    55NS Result Highlights (3)

    Part ECAD Model Manufacturer Description Download Buy
    AM27LS07PC Rochester Electronics LLC Standard SRAM, 16X4, 55ns, TTL, PDIP16, PLASTIC, DIP-16 Visit Rochester Electronics LLC Buy
    AM27C010-55PC Rochester Electronics LLC OTP ROM, 128KX8, 55ns, CMOS, PDIP32, PLASTIC, DIP-32 Visit Rochester Electronics LLC Buy
    AM27C256-55PI Rochester Electronics LLC OTP ROM, 32KX8, 55ns, CMOS, PDIP28, DIP-28 Visit Rochester Electronics LLC Buy
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    55NS Price and Stock

    TAIYO YUDEN TSA5NA6L5G55NS003T

    RF ANT 3.5GHZ/5.6GHZ CHIP SLD
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    DigiKey TSA5NA6L5G55NS003T Cut Tape 1,985 1
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    TSA5NA6L5G55NS003T Digi-Reel 1,985 1
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    TSA5NA6L5G55NS003T Reel 1,000 1,000
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    Mouser Electronics TSA5NA6L5G55NS003T
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    TTI TSA5NA6L5G55NS003T Reel 36,000 1,000
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    Chip1Stop TSA5NA6L5G55NS003T Cut Tape 1,000
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    Raltron Electronics Corporation RSP-1300.000-1255-NS2

    12 x 5 x 3mm Speaker
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    DigiKey RSP-1300.000-1255-NS2 Tray 998 1
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    Hammond Manufacturing 1455NSBBK

    BLACK PLASTIC OPEN BEZELS FOR 14
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    DigiKey 1455NSBBK Bulk 5 1
    • 1 $4.68
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    Mouser Electronics 1455NSBBK
    • 1 $4.34
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    Hammond Manufacturing 1455NSPLBK

    BLACK PLASTIC SOLID BEZEL FOR 14
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    DigiKey 1455NSPLBK Bulk 5 1
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    Hammond Manufacturing 1455NSAL-10

    ALUMINUM END PANELS FOR 1455NS E
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    DigiKey 1455NSAL-10 Bulk 2 1
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    Mouser Electronics 1455NSAL-10
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    Newark 1455NSAL-10 Bulk 3 1
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    RS 1455NSAL-10 Package 6 Weeks 1
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    Master Electronics 1455NSAL-10
    • 1 $24.09
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    Find more 55NS price and stock on Findchips.com

    55NS Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    55NS10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NS80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR10 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR100 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR120 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR140 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR160 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR20 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR40 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR60 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF
    55NSR80 Naina Semiconductor Rectifier Diode, Standard Rectifier Diode, Current IF=55A Original PDF

    55NS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 128K X 16 bit BS616LV2016 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 30mA Max. at 55ns


    Original     		PDF BS616LV2016 x8/x16 II-44 R0201-BS616LV2016

    Untitled

    Abstract: No abstract text available
    Text: Very Low Power CMOS SRAM 2M X 8 bit BS62LV1600 Pb-Free and Green package materials are compliant to RoHS n FEATURES n DESCRIPTION Ÿ Wide VCC operation voltage : 2.4V ~ 5.5V Ÿ Very low power consumption : VCC = 3.0V Operation current : 46mA Max. at 55ns


    Original     		PDF BS62LV1600 115mA R0201-BS62LV1600 220uA 100uA 110uA

    AS6C1008

    Abstract: AS6C1008-55
    Text: February 2007 AS6C1008 128K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low powe r consumption: Operating current:10 mA TYP. Standby current: 1 µA (TYP.) Single 2.7V ~ 5.5V po we r supply Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C1008 32-pin 36-ball AS6C1008 02/February/07, AS6C1008-55

    smd transistor HB

    Abstract: LP62S16128B-T
    Text: LP62S16128B-T Series 128K X 16 BIT LOW VOLTAGE CMOS SRAM Features n Operating voltage: 2.7V to 3.6V n Access times: 55/70 ns max. n Current: Very low power version: Operating: 55ns 40mA (max.) 70ns 35mA (max.) Standby: 10µA (max.) n n n n n Full static operation, no clock or refreshing required


    Original     		PDF LP62S16128B-T 44-pin 48-ball MO192 smd transistor HB

    AS6C1016

    Abstract: sram 64k 64k x 8 sram
    Text: OCTOBER 2007 January 2007 AS6C1016 X 8CMOS BIT LOW POWER CMOS SRAM 64K X 16 BIT LOW512K POWER SRAM FEATURES GENERAL DESCRIPTION Fast access time : 55ns Low power consumption: Operating current : 20mA TYP. Standby current : 2 A (TYP.) Single 2.7V ~ 5.5V power supply


    Original     		PDF AS6C1016 44-pin 48-ball AS6C1016 576-bit OCTOBER/2007, sram 64k 64k x 8 sram

    BS62LV2006

    Abstract: BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32
    Text: Very Low Power CMOS SRAM 256K X 8 bit BS62LV2006 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC operation voltage : 2.4V ~ 5.5V y Very low power consumption : VCC = 3.0V Operation current : 23mA Max. at 55ns


    Original     		PDF BS62LV2006 6/20uA R0201-BS62LV2006 BS62LV2006 BS62LV2006DC BS62LV2006SC BS62LV2006SI BS62LV2006STC BS62LV2006STI BS62LV2006TC BS62LV2006TI TSOP-32

    AS6C6264

    Abstract: 6264 SRAM AS6C6264-55PCN SRAM 6264
    Text: February 2007 AS6C6264 8K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time :55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C6264 28-pin AS6C6264 536-bit 02/Feb/07, 6264 SRAM AS6C6264-55PCN SRAM 6264

    AS6C62256-55PCN

    Abstract: AS6C62256-55SIN AS6C62256
    Text: February 2007 AS6C62256 32K X 8 BIT LOW POWER CMOS SRAM FEATURES GENERAL DESCRIPTION Access time : 55ns Low power consumption: Operation current : 15mA TYP. , VCC = 3.0V Standby current : 1µ A (TYP.), VCC = 3.0V Wide range power supply : 2.7 ~ 5.5V Fully Compatible with all Competitors 5V product


    Original     		PDF AS6C62256 28-pin AS6C62256 144-bit 02/FEB/07, AS6C62256-55PCN AS6C62256-55SIN

    BGA-48-0608

    Abstract: BH616UV8011
    Text: Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit BH616UV8011 Pb-Free and Green package materials are compliant to RoHS „ FEATURES „ DESCRIPTION y Wide VCC low operation voltage : 1.65V ~ 3.6V y Ultra low power consumption : Operation current : 12mA Max. at 55ns


    Original     		PDF BH616UV8011 x8/x16 R0201-BH616UV8011 TSOP1-48 BGA-48-0608 BH616UV8011

    tsop32 8x20

    Abstract: M68AF127B PDIP32 SO32 TSOP32 M68AF127
    Text: M68AF127B 1Mbit 128K x8 , 5V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 4.5 to 5.5V ■ 128K x 8 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIMES: 55ns ■ LOW STANDBY CURRENT ■ ■ LOW VCC DATA RETENTION: 2V TRI-STATE COMMON I/O


    Original     		PDF M68AF127B PDIP32 TSOP32 tsop32 8x20 M68AF127B PDIP32 SO32 TSOP32 M68AF127

    M29W512B

    Abstract: PLCC32 TSOP32
    Text: M29W512B 512 Kbit 64Kb x8, Bulk Low Voltage Single Supply Flash Memory • SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ ACCESS TIME: 55ns ■ PROGRAMMING TIME – 10µs per Byte typical ■ PROGRAM/ERASE CONTROLLER – Embedded Byte Program algorithm


    Original     		PDF M29W512B TSOP32 PLCC32 M29W512B PLCC32 TSOP32

    VDR 0047

    Abstract: M68AW128M TFBGA48 TSOP44
    Text: M68AW128M 2 Mbit 128K x16 3.0V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 2.7 to 3.6V ■ 128K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.5V


    Original     		PDF M68AW128M TSOP44 TFBGA48 VDR 0047 M68AW128M TFBGA48

    M68AR256M

    Abstract: TFBGA48
    Text: M68AR256M 4 Mbit 256K x16 1.8V Asynchronous SRAM FEATURES SUMMARY • SUPPLY VOLTAGE: 1.65 to 1.95V ■ 256K x 16 bits SRAM with OUTPUT ENABLE ■ EQUAL CYCLE and ACCESS TIME: 55ns ■ SINGLE BYTE READ/WRITE ■ LOW STANDBY CURRENT ■ LOW VCC DATA RETENTION: 1.0V


    Original     		PDF M68AR256M TFBGA48 M68AR256M TFBGA48

    UN45

    Abstract: No abstract text available
    Text: STK11C68-M SlfTlTEH CMOS nvSRAM High Performance 8K x 8 Nonvolatile Static RAM MlL-STD-883/SMD # 5962-92324 FEATURES 30,35,45 and 55ns Access Times 15,20 and 25ns Output Enable Access Unlimited Read and Write to SRAM Software STORE Initiation Automatic STORE Timing


    OCR Scan     		PDF STK11C68-M MlL-STD-883/SMD STK11C68 300-mil UN45

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 8 K x 16 DUAL-PORT STATIC RAM IDT70V25S/L In te g ra te d D e v iz e T e c h n o lo g y , l i e . FEATURES: • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the sam e m em ory location • H igh-speed access — Com m ercial: 25/35/55ns max.


    OCR Scan     		PDF IDT70V25S/L 25/35/55ns IDT70V25S IDT70V25L IDT70V25 100-pin 84-pin G84-3)

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 64K x 8 DUAL-PORT STATIC RAM IDT7008S/L F eatu res * * * True Dual-Ported m em ory cells w hich allow sim ultaneous more u sin g the Master/Slave select when ca sca d in g more High-speed a c c e ss than one device_ - M ilitary: 25/35/55ns max.


    OCR Scan     		PDF IDT7008S/L IDT7008 25/35/55ns 20/25/35/55ns IDT7008S

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT IDT70121S/L IDT70125S/L Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • H igh-speed access - Com m ercial: 25/35/45/55ns max. • Low -power operation - ID T70121/70125S Active: 500m W (typ.)


    OCR Scan     		PDF IDT70121S/L IDT70125S/L 25/35/45/55ns T70121/70125S IDT70121/701251Active: IDT70121 IDT70125 T70121 70121/70125S/L 52-pin

    idt71028S

    Abstract: No abstract text available
    Text: CMOS STATIC RAM 1 MEG 256K X 4-BIT ADVANCE INFORMATION IDT71028 Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • 256K x 4 configuration • High-speed access — Military: 30/35/45/55ns (max.) — Commercial: 25/35/45ns (max.) • Low power consumption


    OCR Scan     		PDF IDT71028 30/35/45/55ns 25/35/45ns IDT71028S 500mW IDT710281Active: 200nW 28-pin MIL-STD-883, idt71028S

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 2K x 8 DUAL-PORT STATIC RAM WITH INTERRUPT IDT71V321S/L IDT71V421S/L I n t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • H igh-speed access — Industrial: 25ns max. — C om m ercial: 25/35/55ns (max.) • Low -power operation


    OCR Scan     		PDF IDT71V321S/L IDT71V421S/L 25/35/55ns T71V321L/ID T71V421L IDT71V321 16-or-m IDT71V421 71V421 52-pin

    Untitled

    Abstract: No abstract text available
    Text: IDT7133SA/LA IDT7143SA/LA HIGH SPEED 2 K X 16 DUAL-PORT SRAM F e a tu re s ♦ High-speed access ♦ BUSY output flag on IDT7133; BUSY input on IDT7143 - M ilitary: 25/35/45/55/70/90ns max. ♦ Fully asynchronous operation from either port - Industrial: 55ns (max.)


    OCR Scan     		PDF IDT7133SA/LA IDT7143SA/LA IDT7133; IDT7143 25/35/45/55/70/90ns 20/25/35/45/55/70/90ns 68-pin 100-pin IDT7133/43SA 1150m

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 3.3V 16Kx 16 DUAL-PORT STATIC RAM PRELIMINARY IDT70V26S/L Integrated Device Technology, Inc. • FEATURES: • • • • • True Dual-Ported m em ory cells which allow sim ulta­ neous reads of the same m em ory location High-speed access — Com mercial: 25/35/55ns max.


    OCR Scan     		PDF IDT70V26S/L 25/35/55ns IDT70V26S IDT70V26L IDT70V26 84-pin G84-3) J84-1) 70V26

    Untitled

    Abstract: No abstract text available
    Text: HIGH-SPEED 4K X 8 DUAL-PORT STATIC SRAM IDT7134SA/LA In t e g r a t e d D e v iz e T e c h n o lo g y , l i e . FEATURES: • High-speed access — Military: 25/35/45/55/70ns max. — Industrial: 55ns (max.) — Commercial: 20/25/35/45/55/70ns (max.) • Low-power operation


    OCR Scan     		PDF IDT7134SA/LA 25/35/45/55/70ns 20/25/35/45/55/70ns IDT7134SA 500mW IDT7134LA MIL-STD-883, 48-pin

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT70V27S/L HIGH-SPEED 3.3V 3 2Kx 16 DUAL-PORT STATIC RAM In te g ra te d D e vice T e ch n o lo g y, Inc. FEATURES: • • True Dual-Ported memory cells which allow simulta­ neous access of the same memory location • High-speed access — Commercial: 25/35/55ns max.


    OCR Scan     		PDF IDT70V27S/L 25/35/55ns IDT70V27S 550mW IDT70V27L IDT70V27 100-pin PN100-1)

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY IDT70121S/L IDT70125S/L HIGH-SPEED 2K x 9 DUAL-PORT STATIC RAM WITH BUSY & INTERRUPT Integrated Device Technology, Inc. FEATURES: • High-speed access - Military: 35/45/55/70ns max. - Commercial: 25/35/45/55ns (max.) • Low-power operation


    OCR Scan     		PDF IDT70121S/L IDT70125S/L 35/45/55/70ns 25/35/45/55ns IDT70121/70125S 400mW IDT70121/701251Active: IDT70121 IDT70125