5C T TRANSISTOR Search Results

5C T TRANSISTOR Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

5C T TRANSISTOR Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BC807-40 Abstract: No abstract text available Text: BC807-25 BC807-40 SMALL SIGNAL PNP TRANSISTORS PRELIMINARY DATA Type Marking BC807-25 5B BC807-40 5C s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O • ■	Original	PDF	BC807-25 BC807-40 OT-23 BC817-25 BC817-40 OT-23 BC807-40
Untitled Abstract: No abstract text available Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C36 Microcontroller D ATA SHE E T D S -LM3S 5C 36 - 1 3 4 4 0 . 2 5 4 9 S P M S 237B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated	Original	PDF	LM3S5C36
Untitled Abstract: No abstract text available Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C36 Microcontroller D ATA SHE E T D S -LM3S 5C 36 - 1 3 4 4 0 . 2 5 4 9 S P M S 237B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated	Original	PDF	LM3S5C36
Untitled Abstract: No abstract text available Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C56 Microcontroller D ATA SHE E T D S -LM3S 5C 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 241B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated	Original	PDF	LM3S5C56
cs 308 Abstract: Microprocessor Supervisor Circuit Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C31 Microcontroller D ATA SHE E T D S -LM3S 5C 31 - 1 3 4 4 0 . 2 5 4 9 S P M S 239B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated	Original	PDF	LM3S5C31 cs 308 Microprocessor Supervisor Circuit
Untitled Abstract: No abstract text available Text: NRND: Not recommended for new designs. TE X AS I NS TRUM E NTS - P RO DUCTION D ATA Stellaris LM3S5C56 Microcontroller D ATA SHE E T D S -LM3S 5C 56 - 1 3 4 4 0 . 2 5 4 9 S P M S 241B C o p yri g h t 2 0 07-2012 Te xa s In stru me n ts In co rporated	Original	PDF	LM3S5C56
2SC3040 Abstract: No abstract text available Text: Ordering number: EN 997B _ 2SC3040 NPN Triple Diffused Planar Silicon Transistor 400V/8A Switching Regulator Applications Features . High breakdown voltage VCB0£500V . Fast switching speed. . Wide ASO. Absolute M a x i m a Ratings at T a = 2 5C	OCR Scan	PDF	2SC3040 00V/8A PW1300 Cycled10? 100ms 2SC3040
VK200 inductance Abstract: vk200 vk200 rfc with 6 turns SD1136 inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098 Text: S G □ 5C d \| S —THOMSON 7^237 0GQD17Q T .0 T~ 1? -// SOLID STATE MICROWAVE SD1136 THOMSON-CSF COMPONENTS CORPORATION Montgomeryvilie; PA 18936 * (215 362-8500 • TW X 510-661-7299 10 W, 12.5 V UHF POWER TRANSISTOR DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar	OCR Scan	PDF	SD1136 ATC100B, VK200/19-4B 3M-K-6098 CC-12 VK200 inductance vk200 vk200 rfc with 6 turns inductor vk200 VK200 4B inductor Voltronics Corp. ATC100B uhf transistor amplifier MATERIAL-3M-K-6098
transistor Bf 979 Abstract: pnp vhf transistor Text: I BSE D • flB35taDS 0GG45Ö4 T ■ SIEG 'T -3 I-/S BF 979 S PNP Silicon Planar Transistor SIEMENS AKTIENGESELLSCHAF 5C 04584 D - BF 9 7 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 4 1 8 6 7 .	OCR Scan	PDF	flB35taDS 0GG45 transistor Bf 979 pnp vhf transistor
TRANSISTOR TCD 100 Abstract: 3n123 teledyne transistor Transistor Bo 17 BU100 Text: TELEDYNE COMPONENTS EflE D • ûW bOa □GGt.5cì3 1 M LOW COST 3N123 SILICON EPITAXIAL JUNCTION INTEGRATED CHOPPER TRANSISTOR G E O M E T R Y 45Q ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G PARAM ETER SYM BO L 3N123 U N IT S Collector to Base Voltage	OCR Scan	PDF	3N123 3N123 TRANSISTOR TCD 100 teledyne transistor Transistor Bo 17 BU100
Untitled Abstract: No abstract text available Text: FMW10 h 7 > y ^ ^ / T ransistors FMW10 Amplifier Epitaxial Planar Dual Mini-Mold NPN Silicon Transistor so>4V;Vvfn- • 1M & \f;£ 0 /D im e n s io n s Unit : mm 1) 7 , - n 2 (0 <T) 7 5>3t >?1£*5c £ nri'-So 2) 2(@<7) h 7 > y X ! > C D tS ttA 'f -5 77 T	OCR Scan	PDF	FMW10
1501a Abstract: AC 1501A ac 1501a 12 TCM1512P TCM1506A 1512A Text: 6961 72 4 TEXAS TELECOMMUNICATION CIRCUITS INSTR CL IN / I NTFC 5 5C 33907 D T-52-13-35 TYPES TCM1501A, TCM1506A, TCM1512À, TCM1513A TELEPHUNfc lUNt KiiuutK unlVERS D 2763, SEPTEMBER 1983 P DUAL-IN-LINE PACKAGE Electronic Replacement for Electromechanical	OCR Scan	PDF	T-52-13-35 TCM1501A, TCM1506A, TCM1512À TCM1513A TCIVI1512A, TCM1513A T-52-13-35 1501a AC 1501A ac 1501a 12 TCM1512P TCM1506A 1512A
transistor bf 979 Abstract: Q62702-F610 C12B pnp vhf transistor Text: ^ I 5SE D • . . flE3SbDS 0GG45fl4 T ■ SIEG PIMP Silicon Planar Transistor BF 979 S SIEMENS AK TI EN GES ELL SCH AF 5C 04584 D - BF 97 9 S is a PNP silicon planar transistor in low-capacitance plastic package similar to TO 119 50 B 3 DIN 41867 .	OCR Scan	PDF	fl235bOS Q62702-F610 25i02 160ansistion transistor bf 979 Q62702-F610 C12B pnp vhf transistor
IC 4047 Abstract: N2219 ic 4046 bsw830 BSW82 N 2222 N2222A BSW83 2N3301 2N3302 Text: NPN Silicon Transistors NPN Silicon Epitaxial Planar Transistors lc = 5C 0mA) in TO-18 and TO-39 (~ T O - 5 ) metal cases for high speed switching Type Characteristics @ Tam b= 25°C Maximum Ratings f" l„ Tam b— ff 2 5 °C Tease— V CE = 10 V = 10 mA	OCR Scan	PDF	BSW83 2N3301 2N3302 IC 4047 N2219 ic 4046 bsw830 BSW82 N 2222 N2222A 2N3301 2N3302

Untitled Abstract: No abstract text available Text: IS0C0I1 C O M P O N E N T S 4886510 LTD ISOCOM ?5c d • 4aat,siD o o G o n t ?bo ■ iso_ 75C 00 196 INC / d C//- ^ 3 4N25, 4N26, 4N27, 4N28 OPTICALLY COUPLED ISOLATORS ABSOLUTE MAXIMUM RATINGS 25°C unless otherwise noted Storage Tem perature . -55°C to + 1 5 0 °C	OCR Scan	PDF
Untitled Abstract: No abstract text available Text: BC807 BC808 HL SILICON PLANAR EPITAXIAL TRANSISTORS P -N -P transistor M arking P A C K A G E O U T L IN E D E T A IL S A L L D IM E N S IO N S IN m m BC807 = 5D BC807-16 = 5A BC807-25 « 5B BC807-40 = 5C BC808 = 5H BC808-16 = 5E BC808-25 = 5F BC808-40 = 5G	OCR Scan	PDF	BC807 BC808 BC807 BC807-16 BC807-25 BC807-40 BC808-16 BC808-25 BC808-40
555 timer smps Abstract: No abstract text available Text: n z z S G S - T H O M S O N ^•7/. KfflD [^©[lL[i©¥[^©KilD©@ L6561 POWER FACTOR CORRECTOR PRO DU CT PREVIEW • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWER START-UP CURRENT 5C jATYP.) ■ VERYLOW OPERATING SUPPLY CURRENT (4mA TYP.)	OCR Scan	PDF	L6561 400mA DIP8/S08 L6561 L6560 555 timer smps
CMBT4124 Abstract: No abstract text available Text: CMBT4124 GENERAL PURPOSE TRANSISTOR N -P -N transistor PA C K A G E O U TLIN E D ETA ILS A LL D IM EN SIO N S IN m m M arking CMBT4124 = 5C _3.0_ 2.8 0.14 0.48 0.38 -^ p T 0 9 0.70 0.50 3 Pin configuration 2.6 1 = BASE 2 = EMITTER 3 = COLLECTOR 2.4 1.4 1.2	OCR Scan	PDF	CMBT4124 CMBT4124
BCY 68 Abstract: BCY58 BCY59 0431I BCY68 BCY 59 Q60203-Y58 Q60203-Y58-H Q60203-Y58-J Q60203-Y59 Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - BCY 58 BCY59 D - BCY 65 E 2 5C 04306 BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41 87 6 . The collector is electrically connected to the case. The transistors	OCR Scan	PDF	23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 68 0431I BCY68 BCY 59
BCY59 Abstract: BCY 85 BCY58 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G Text: 2SC » • 023SbQS GGQM30b 3 « S I E G NPN Silicon Planar Transistors - 2 5C 0 4 3 0 6 BCY 58 BCY59 D - BCY 65 E BCY 58, BCY 59, and BCY 65 E are epitaxial NPN silicon Planartransistors in T 0 18 cases 18 A 3 DIN 41876 . The collector is electrically connected to the case. The transistors	OCR Scan	PDF	23Sb05 BCY58 BCY59 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G BCY 85 Q60203-Y58 Q60203-Y58-G Q60203-Y58-H Q60203-Y58-J Q60203-Y58-K Q60203-Y59 Q60203-Y59-G
orega Abstract: L6561 application L6561 fuse 2a 250v ETD29 L6561 AN litz wire 38 awg B1ET2910A BYT03-400 L6560 Text: SGS-TtiOMSON L6561 :ILI iriS3©K!lDgl POWER FACTOR CORRECTOR P R O D U C T P R E V IE W • VERY PRECISE ADJUSTABLE OUTPUT OVERVOLTAGE PROTECTION ■ MICRO POWERSTART-UP CURRENT 5C uATYP.) ■ V E R Y LO W OPERATING SUPPLY CURRENT (4mA TYP.) ■ INTERNAL START-UP TIMER	OCR Scan	PDF	L6561 400mA L6561 L6560 265V30 orega L6561 application fuse 2a 250v ETD29 L6561 AN litz wire 38 awg B1ET2910A BYT03-400
514256 Abstract: 514256-10 MSM514256 MSM514256-10 MSM514256-12 oki msm51426 A2E3 Text: O K I SEMICO ND UC T OR GROUP IDE D £ b?5M5MD Q0Q4E02 7 £ Q 5C B sennlcoicfltactog* MSM514256RS/JS/ZS 262,144-WORD X , -r-4L-x*-n _ 4-BITS DYNAMIC RAM GENERAL DESCRIPTION The MSM514256 is a new generation dynamic RAM organized as 262,144 words by 4 bits. The technology	OCR Scan	PDF	MSM514256RS/JS/ZS 144-WORD MSM514256 20-pin MSM514256-10 MSM514256-12 supplM-MSM514256RS/JS/ZS T-46-23-17 514256 514256-10 oki msm51426 A2E3
st 9926 Abstract: 9926 mosfet mosfet 600V 50A Text: Preliminary Data Sheet No. PD-9.926 International Rectifier i r g t i o o 5c m i 2 > Fast IGBT "HALF-BRIDGE” INT-A-PAK™ MODULES V CE = 1200V ^C DC = ^ 0 A • Rugged Design • Simple gate-drive • Fast operation up to 10 kHz hard switching, or 50 kHz resonant	OCR Scan	PDF	IRGTI0050M12 D-6380 5S452 DD22D st 9926 9926 mosfet mosfet 600V 50A
Siemens 1836 Abstract: No abstract text available Text: 2SC D • T-33-29 ô53SbOS QQQMHIB 4 « S I E 6 . BD 861 BD 863 BD 865 NPN Silicon Darlington Transistors SIEMENS AKTIENÛESELLSCHAF 5C 04^ 13 ° Epibase p o w e r d arlington transistors 1 5 W BD 8 6 1 , BD 8 6 3 , and BD 8 6 5 are monolithic silicon NPN epibase power darlington transistors	OCR Scan	PDF	53SbOS T-33-29 asaS25 235b05 QQG441b T-33-29 BD863 BD865 Siemens 1836

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5C T TRANSISTOR Search Results

5C T TRANSISTOR Result Highlights (5)

5C T TRANSISTOR Datasheets Context Search

BC807-40

Untitled

Untitled

Untitled

cs 308

Untitled

2SC3040

VK200 inductance

transistor Bf 979

TRANSISTOR TCD 100

Untitled

1501a

transistor bf 979

IC 4047

Untitled

Untitled

555 timer smps

CMBT4124

BCY 68

BCY59

orega

514256

st 9926

Siemens 1836