abb igbt die
Abstract: No abstract text available
Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1274 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1301-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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12E1274
CH-5600
abb igbt die
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abb igbt die
Abstract: No abstract text available
Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 PRELIMINARY Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide
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12E1280
5SYA1306-01
CH-5600
abb igbt die
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1262 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1628-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage
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12E1262
CH-5600
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9280A
Abstract: 5SLX12E1200
Text: 9& ,& 9 $ ,*%7'LH 60; + 'LH VL]H [ PP Doc. No. 5SYA 1616-01 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV
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CH-5600
9280A
5SLX12E1200
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5SLX12E1200
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1273 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1641-00 Apr 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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12H1273
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IGBT abb
Abstract: 5SLX12E1200
Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1273 Die size: 6.6 x 6.5 mm Doc. No. 5SYA 1632-00 June 05 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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12E1273
wE1273
CH-5600
IGBT abb
5SLX12E1200
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1262 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1629-00 Feb. 05 • Low loss, rugged SPT technology • Smooth switching for good EMC • Large bondable emitter area Maximum rated values Parameter Collector-emitter voltage
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CH-5600
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5SLX12E1200
Abstract: No abstract text available
Text: 9& ,& 9 $ ,*%7'LH 60; ( 'LH VL]H [ PP Doc. No. 5SYA1615-01 July 03 • /RZ ORVV WKLQ ,*%7 GLH • +LJKO\ UXJJHG 637 GHVLJQ • /DUJH IURQW ERQGDEOH DUHD 0D[LPXP UDWHG YDOXHV 3DUDPHWHU Collector-emitter voltage 6\PERO &RQGLWLRQV
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CH-5600
Abstract: 5SYA2033-01 5SLX12E1200
Text: 9& ,& 9 $ ,*%7'LH 60;+ 'LH VL]H [ PP Doc. No. 5SYA1607-01 Aug 02 /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 637 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP 5DWHG 9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25°C, unless specified otherwise
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5SYA1607-01
5SYA2033-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 25 A IGBT-Die 5SMX 12E1280 Die size: 6.6 x 6.5 mm Doc. No. 5SYA1306-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications
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12E1280
5SYA1306-03
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 PRELIMINARY Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-01 July 08 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide
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12H1280
5SYA1307-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: 9& ,& 9 $ ,*%7'LH 60;( 'LH VL]H [ PP Doc. No. 5SYA1601-03 Aug 02 /RZ ORVV WKLQ ,*%7 GLH +LJKO\ UXJJHG 137 GHVLJQ /DUJH IURQW ERQGDEOH DUHD 0D[LPXP 5DWHG 9DOXHV 3DUDPHWHU Collector-Emitter Voltage (Tj = 25°C, unless specified otherwise
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5SYA1601-03
5SYA2033-01
CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1280 Die size: 9.1 x 9.0 mm Doc. No. 5SYA1307-03 04 14 • Low loss, rugged SPT technology Smooth switching for good EMC Large bondable emitter area Passivation: Silicon Nitride plus Polyimide Optimized for high DC-link voltage applications
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12H1280
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CH-5600
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Untitled
Abstract: No abstract text available
Text: VCE IC = = 1200 V 50 A IGBT-Die 5SMX 12H1274 Die size: 9.1 x 9.0 mm Doc. No. 5SYA 1302-00 Dec 07 • • • • • Low loss, rugged SPT technology Smooth switching for good EMC Minimized gate charge, short delay times Optimized for paralleling Large bondable emitter area
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