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    6-18GHZ AMPLIFIER Search Results

    6-18GHZ AMPLIFIER Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    LM1536H/883 Rochester Electronics LLC Operational Amplifier Visit Rochester Electronics LLC Buy
    HA1-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy
    HA4-5114/883 Rochester Electronics LLC Operational Amplifier, Visit Rochester Electronics LLC Buy

    6-18GHZ AMPLIFIER Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: MMA004AA 6-18GHz, 21dB Gain, 1.5dB NF Low Noise Amplifier Features • 16dBm PSAT with 1.5dB NF and 21.5dB gain typical from 6-18GHz • Gain flatness < +/-0.5dB • Input and Output matched to 50Ω • Self biased for simple biasing, small solution size and ease of manufacture


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    MMA004AA 6-18GHz, 16dBm 6-18GHz 24dBm MM-PDS-0005 PDF

    Untitled

    Abstract: No abstract text available
    Text: MMA-061827 6-18GHz, 0.5W Power Amplifier Data Sheet December, 2012 .Features: L0705R35_2_2_A L0705R40_1_2_A L0705R35_2_2_A L0705R40_1_2_A Frequency Range: 6 – 18 GHz P1dB: 27 dBm Psat: 28 dBm Gain: 25 dB Vdd =6 V Ids = 800 mA Input and Output Fully Matched to 50 Ω


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    MMA-061827 6-18GHz, L0705R35 L0705R40 MMA-061827 18GHz MMA061827 PDF

    40 P1dB 2W

    Abstract: DC TO 18GHZ RF AMPLIFIER MMIC 3521a L0705 L0705R
    Text: MMA-061830 6-18GHz, 2W Power Amplifier Data Sheet December 2012 Features: L1505R 75_1_1_A L0505R25_2_A L0705R35_2_1_A L0705R35_2_1_A L1505R 75_1_1_A Frequency Range: 6 – 18 GHz P1dB: 32 dBm Psat: 33 dBm Gain: 25 dB Vdd =6 V Ids = 1200 mA Input and Output Fully Matched to 50 Ω


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    MMA-061830 6-18GHz, L0705R L0705R35 MMA-061830 18GHz MMA061830 L0505R 40 P1dB 2W DC TO 18GHZ RF AMPLIFIER MMIC 3521a L0705 PDF

    Rogers 4350B

    Abstract: No abstract text available
    Text: MMA-061830-R5 6-18GHz, 1W Power Amplifier Data Sheet December 2012 Features: • • • • • • • • Frequency Range: 6 – 18 GHz P1dB: 32 dBm Psat: 33 dBm Gain: 25 dB Vdd =6 V Ids = 1200 mA Input and Output Fully Matched to 50 Ω Integrated RF power detector


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    MMA-061830-R5 6-18GHz, MMA-061830 18GHz g1830-R5 10mil 4350B MMA061830-R5 Rogers 4350B PDF

    marconi

    Abstract: NN12 P35-5131-000-200 MARCONI power
    Text: P35-5131-000-200 GaAs MMIC POWER AMPLIFIER, 6-18GHz Simulated Electrical Parameters Parameters Small Signal Gain Gain Flatness Input Return Loss Output Return Loss Saturated Output Power Power Added Efficiency PAE Total circuit current Supply Voltage; Vdd


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    P35-5131-000-200 6-18GHz 18GHz marconi NN12 P35-5131-000-200 MARCONI power PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,


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    CHA6517 6-18GHz CHA6517 DSCHA65179250 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the


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    CHA3514 6-18GHz CHA3514 6-18GHz 19dBm 190mA DSCHA3514-8144 PDF

    CHA3514

    Abstract: sas 560
    Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the


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    CHA3514 6-18GHz CHA3514 DSCHA35146278 sas 560 PDF

    CHA6517

    Abstract: fop 630
    Text: CHA6517 RoHS COMPLIANT 6-18GHz High Power Amplifier GaAs Monolithic Microwave IC Description The CHA6517 is a Dual channel monolithic three-stage GaAs high power amplifier designed for wide band applications. This device is manufactured using a UMS 0.25 µm Power pHEMT process,


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    CHA6517 6-18GHz CHA6517 18GHz DSCHA65179250 fop 630 PDF

    CHA3514

    Abstract: No abstract text available
    Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the


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    CHA3514 6-18GHz CHA3514 6-18GHz 19dBm 190mA DSCHA3514-8144 PDF

    CHA3514

    Abstract: digital attenuator 544
    Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the


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    CHA3514 6-18GHz CHA3514 6-18GHz 19dBm 190mA DSCHA3514-8144 digital attenuator 544 PDF

    NN12

    Abstract: P35-4140-0 P35-4140-000-200 DC TO 18GHZ RF AMPLIFIER MMIC
    Text: Data sheet MMIC Broadband Amplifier, 6- 18GHz Features • Broadband cascadable gain block • AGC control with gate bias The P35-4140-000-200 is a high performance monolithic broadband amplifier designed for use in a wide range of applications including telecommunications, instrumentation


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    18GHz P35-4140-000-200 18GHz. 15dBm P35-4140-000-200 462/SM/00580/200 NN12 P35-4140-0 DC TO 18GHZ RF AMPLIFIER MMIC PDF

    CHA3514

    Abstract: No abstract text available
    Text: CHA3514 RoHS COMPLIANT 6-18GHz 4 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3514 is composed by a two stage travelling wave amplifier followed by a four steps digital attenuator. It is designed for defense applications. The backside of the


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    CHA3514 6-18GHz CHA3514 6-18GHz 19dBm 190mA DSCHA3514-8144 PDF

    10A1

    Abstract: 10B1 CHA3513
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    CHA3513 6-18GHz CHA3513 DSCHA3513-8144 10A1 10B1 PDF

    10A1

    Abstract: 10B1 CHA3513
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    CHA3513 6-18GHz CHA3513 DSCHA35136216 10A1 10B1 PDF

    17-18g

    Abstract: 8144 10A1 10B1 CHA3513 617G
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    CHA3513 6-18GHz CHA3513 DSCHA3513-8144 17-18g 8144 10A1 10B1 617G PDF

    CHA3512-99F/00

    Abstract: CHA3512
    Text: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed


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    CHA3512 6-18GHz CHA3512 6-18GHz 23dBm DSCHA3512-8144 CHA3512-99F/00 PDF

    Untitled

    Abstract: No abstract text available
    Text: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed


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    CHA3512 6-18GHz CHA3512 6-18GHz 23dBm DSCHA3512-8144 PDF

    CHA3512

    Abstract: No abstract text available
    Text: CHA3512 RoHS COMPLIANT 6-18GHz Low Noise Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3512 is composed by a Single Pole Double Through SPDT switch followed by a one step digital attenuator and a double stage travelling wave amplifier. It is designed


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    CHA3512 6-18GHz CHA3512 6-18GHz 23dBm DSCHA3512-8144 PDF

    17-18g

    Abstract: CHA3513 8144 10A1 10B1
    Text: CHA3513 RoHS COMPLIANT 6-18GHz 3 bit Digital Variable Amplifier GaAs Monolithic Microwave IC Description The CHA3513 is composed by a three steps digital attenuator followed by a three stage travelling amplifier and a Single Pole Single Through SPST switch. It is designed for


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    CHA3513 6-18GHz CHA3513 DSCHA3513-8144 17-18g 8144 10A1 10B1 PDF

    Untitled

    Abstract: No abstract text available
    Text: HP/Avantek 6-18GHz Amplifier Replacements DFT186N40U/ DFT186N50U Series HP/Avantek 6-18GHz Amplifier Replacements without Temperature Compensation DBS Model Number Frequency Response GHz Min. Gain (dB) Gain (dB) PldB (dBm) Max. Noise Figure (dB) Max. Min.


    OCR Scan
    6-18GHz DFT186N40U/ DFT186N50U 12Vdc DFT186N50U21 DFT186N50U24 DFT186N50U30 DFT186N50U35 DFT186N50U40 PDF

    Untitled

    Abstract: No abstract text available
    Text: HP/Avantek 6-18GHz Amplifier Replacements DWT186N30T/ DWT186N33T/ DWT186P18T/ Series HP/Avantek 6-18GHz Amplifu ;r Replacements with Temperature Com lensation G u a r a n te e d @ -5 4 T O +100 C M odel DBS F req u en cy R esponse N um ber G H z M in .


    OCR Scan
    6-18GHz DWT186N30T/ DWT186N33T/ DWT186P18T/ DWT186P18T20 DWT186P18T22 DWT186P18T25 DWT186P18T28 DWT186P18T30 PDF

    Untitled

    Abstract: No abstract text available
    Text: HP/Avantek 6-18GHz Amplifier Replacements DWT186N23U/ DWT186N27U/ DWT186P20U Series HP/Avantek 6-18GHz Amplifier Replacements without Temperature Compensation G u a r a n te e d @ +25 C DBS M odel F req u e n c y G a in G a in N o is e P ld B G a in IP 3 V SW R


    OCR Scan
    6-18GHz DWT186N23U/ DWT186N27U/ DWT186P20U 20dBm 30dBm PDF

    Untitled

    Abstract: No abstract text available
    Text: LITTON IND/LITTON SOLID SbE ]> • 5S44SDD 0GDG524 275 ■ LITT Litton LF6872 Solid State 1/4 W att, Low Distortion GaAs FET PRELIMINARY SPECIFICATIONS FEATURES ■ +24 dBm Typical Output Power @ 18GHz ■ 6 dB Typical Compressed Gain @ 18GHz ■ Low 2nd Harmonic Distortion


    OCR Scan
    5S44SDD 0GDG524 LF6872 18GHz LF6872 2285-C PDF