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    600V, DIODE DC Search Results

    600V, DIODE DC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    RJU60C6TDPP-AJ#T2 Renesas Electronics Corporation 600V - 50A - Single Diode Fast Recovery Diode Visit Renesas Electronics Corporation
    RJU60C6SDPQ-A0#T2 Renesas Electronics Corporation 600V - 25A - Single Diode Fast Recovery Diode Visit Renesas Electronics Corporation
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
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    600V, DIODE DC Price and Stock

    Diodes Incorporated AL5890-30P1-13

    Led, Dc/Dc Driver, Linear, Powerdi 123 Rohs Compliant: Yes |Diodes Inc. AL5890-30P1-13
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    Onlinecomponents.com AL5890-30P1-13 8,200
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    TDK-Lambda Corporation I1C2W010A120V-001-R

    DC-DC Converter - 200W - 9-36Vin - 9.5-28Vout 10A - 1x1 - Neg On/Off - 0.145" pin length
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    Onlinecomponents.com I1C2W010A120V-001-R 45
    • 1 $59.99
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    • 100 $49.32
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    TDK-Lambda Corporation I1C2W010A120V-005-R

    DC-DC Converter - 200W - 9-36Vin - 9.5-28Vout 10A - 1x1 - Neg On/Off - 0.220" pin length
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    Onlinecomponents.com I1C2W010A120V-005-R 45
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    TDK-Lambda Corporation I1C4W010A120V-001-R

    DC-DC Converter - 200W - 18-75Vin - 9.5-28Vout 10A - 1x1 - Neg On/Off - 0.145" pin length
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    Onlinecomponents.com I1C4W010A120V-001-R 45
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    TDK-Lambda Corporation I7C2W020A120V-0C3-R

    DC-DC Converter - PCB Mount - Sixteenth Brick - Input 24VDC - Output 8.0-24V 20A - 300W - Neg Logic - Baseplate - Full featured
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    Onlinecomponents.com I7C2W020A120V-0C3-R 15
    • 1 $66.36
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    Find more 600V, DIODE DC price and stock on Findchips.com

    600V, DIODE DC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    G8060

    Abstract: ruru8060 RUR 0820 TB-01
    Text: [ /Title RUR G8060 /Subject (80A, 600V Ultrafa st Diode) /Autho r () /Keywords (80A, 600V Ultrafa st Diode, Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power Switch ing Cir- RURU8060 Data Sheet October 2001 File Number


    Original     		PDF G8060 RURU8060 RURU8060 G8060 RUR 0820 TB-01

    R1560

    Abstract: R1560P2 IRF450 ISL9R1560P2 TA49410
    Text: [ /Title ISL9 R1560 P2 /Subje ct (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO220AC ) /Creato r () /DOCI NFO pdfmar k [ /Page ISL9R1560P2 TM Data Sheet September 2000 File Number


    Original     		PDF R1560 O220AC ISL9R1560P2 ISL9R1560P2 R1560 R1560P2 IRF450 TA49410

    r860p2

    Abstract: 860P2
    Text: ISL9R860P2 Data Sheet [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC March 2001


    Original     		PDF ISL9R860P2 860P2) to220ac) ISL9R860P2 r860p2 860P2

    sec irf840

    Abstract: ISL9R860P2 R860P2
    Text: [ /Title ISL9R 860P2 /Subjec t (8A, 600V Stealth Diode) /Autho r () /Keyw ords (8A, 600V Stealth ™ Diode, Intersil Corpor ation, semico nducto r, to220ac) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO utlines /DOC ISL9R860P2 TM Data Sheet September 2000


    Original     		PDF 860P2) to220ac) ISL9R860P2 ISL9R860P2 sec irf840 R860P2

    R1560G2

    Abstract: IRF450 ISL9R1560G2 TA49410 dt3800
    Text: [ /Title ISL9R 1560G 2 /Subjec t (15A, 600V Stealth Diode) /Autho r () /Keyw ords (Intersi l Corpor ation, semico nducto r, 15A, 600V Stealth ™ Diode, TO247) /Creato r () /DOCI NFO pdfmar k [ /Page Mode /UseO ISL9R1560G2 TM Data Sheet September 2000


    Original     		PDF 1560G ISL9R1560G2 ISL9R1560G2 R1560G2 IRF450 TA49410 dt3800

    W20NM60

    Abstract: STF20NM60FD w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST stp20nm60fd
    Text: STF20NM60FD - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60FD 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60FD STP20NM60FD STW20NM60FD O-220 O-220FP O-247 O-247 W20NM60 w20nm60fd P20NM60FD p20nm60 p20nm60f mosfet 600V 100A ST

    P11NM60

    Abstract: p11nm60fdfp b11nm60
    Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A


    Original     		PDF STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP O-220/TO-220FP/D2PAK/I2PAK O-220 P11NM60 p11nm60fdfp b11nm60

    Untitled

    Abstract: No abstract text available
    Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A


    Original     		PDF STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP O-220/TO-220FP/D2PAK/I2PAK STB11NM60FD O-220 STP11NM60FD

    RG 2006 10A 600V

    Abstract: No abstract text available
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP RG 2006 10A 600V

    JESD97

    Abstract: STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP
    Text: STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP N-channel 600V - 0.40Ω - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID STB11NM60FD 600V <0.45Ω 11A STB11NM60FD-1 600V <0.45Ω 11A


    Original     		PDF STB11NM60FD STB11NM60FD-1 STP11NM60FD STP11NM60FDFP O-220/TO-220FP/D2PAK/I2PAK STB11NM60FD O-220 STP11NM60FD JESD97 STB11NM60FD-1 STP11NM60FDFP

    w20nm60

    Abstract: w20nm60fd P20NM60FD STF20NM60D F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST
    Text: STF20NM60D - STP20NM60FD STW20NM60FD N-channel 600V - 0.26Ω - 20A - TO-220 - TO-220FP - TO-247 FDmesh Power MOSFET with fast diode General features Type VDSS RDS(on) ID Pw STF20NM60D 600V <0.29Ω 20A 192W STP20NM60FD 600V <0.29Ω 20A 45W STW20NM60FD


    Original     		PDF STF20NM60D STP20NM60FD STW20NM60FD O-220 O-220FP O-247 STF20NM60D O-220FP w20nm60 w20nm60fd P20NM60FD F20NM60D STP20NM60FD STW20NM60FD p20nm60 mosfet 600V 100A ST

    Untitled

    Abstract: No abstract text available
    Text: RHRG3060_F085 30A, 600V Hyperfast Rectifier Features Max Ratings 600V, 30A • High Speed Switching ( trr=45ns(Typ.) @ IF=30A ) The RHRG3060_F085 is an Hyperfast diode with soft recovery characteristics (trr < 45ns). It has half the recovery time of ultrafast diode and is of silicon nitride


    Original     		PDF RHRG3060

    Untitled

    Abstract: No abstract text available
    Text: RHRG1560CC_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560CC_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride


    Original     		PDF RHRG1560CC

    G20N60B3D

    Abstract: HGTG20N60B3D LD26 RHRP3060 G20N60B3
    Text: HGTG20N60B3D Semiconductor 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode November 1997 Features Description • 40A, 600V at TC = 25oC • Hyperfast Anti-Parallel Diode The HGTG20N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and


    Original     		PDF HGTG20N60B3D HGTG20N60B3D 150oC. RHRP3060. G20N60B3D LD26 RHRP3060 G20N60B3

    Untitled

    Abstract: No abstract text available
    Text: RHRG1560_F085 15A, 600V Hyperfast Rectifier Features Max Ratings 600V, 15A • High Speed Switching ( trr=26ns(Typ.) @ IF=15A ) The RHRG1560_F085 is an Hyperfast diode with soft recovery characteristics (trr < 55ns). It has half the recovery time of ultrafast diode and is of silicon nitride


    Original     		PDF RHRG1560

    g3n60c3d

    Abstract: HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D
    Text: S E M I C O N D U C T O R HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 6A, 600V at TC = +25oC EMITTER COLLECTOR GATE • 600V Switching SOA Capability


    Original     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns 150oC O-262AA g3n60c3d HGT1S3N60C3D HGT1S3N60C3DS HGT1S3N60C3DS9A HGTP3N60C3D

    12N60B3D

    Abstract: HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334
    Text: HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS Semiconductor 27A, 600V, UFS Series N-Channel IGBTs with Anti-Parallel Hyperfast Diode December 1997 Features Description • 27A, 600V, TC = 25oC This family of MOS gated high voltage switching devices


    Original     		PDF HGTG12N60B3D, HGTP12N60B3D, HGT1S12N60B3D, HGT1S12N60B3DS 150oC. TA49171. TA49188. 12N60B3D HGT1S12N60B3D HGT1S12N60B3DS HGT1S12N60B3DS9A HGTG12N60B3D HGTP12N60B3D TA49188 TB334

    HGT1S12N60C3DR

    Abstract: HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1
    Text: HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 24A, 600V, Rugged, UFS Series N-Channel IGBT with Anti-Parallel Ultrafast Diode February 1998 Features Description • 24A, 600V at TC = 25oC This family of IGBTs was designed for optimum performance


    Original     		PDF HGTG12N60C3DR, HGTP12N60C3DR, HGT1S12N60C3DR, HGT1S12N60C3DRS 150oC 250ns HGT1S12N60C3DR HGT1S12N60C3DRS HGTG12N60C3DR HGTP12N60C3DR TB334 12N60C3 TO-262AA Package equivalent 44J1

    G7N60C3D

    Abstract: G7N60 TA49121 HGT1S7N60C3D HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D
    Text: HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS S E M I C O N D U C T O R 14A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Features Packaging JEDEC TO-220AB • 14A, 600V at TC = +25oC • • • • • EMITTER COLLECTOR GATE 600V Switching SOA Capability


    Original     		PDF HGTP7N60C3D, HGT1S7N60C3D, HGT1S7N60C3DS O-220AB 140ns 150oC O-262AA HGT1S7N60C3D G7N60C3D G7N60 TA49121 HGT1S7N60C3DS HGT1S7N60C3DS9A HGTP7N60C3D

    100n60

    Abstract: No abstract text available
    Text: Preliminary Technical Information IXXK100N60B3H1 IXXX100N60B3H1 XPTTM 600V GenX3TM w/ Diode VCES IC90 VCE sat tfi(typ) Extreme Light Punch Through IGBT for 10-30kHz Switching = = ≤ = 600V 100A 1.80V 150ns TO-264 (IXXK) Symbol Test Conditions Maximum Ratings


    Original     		PDF IXXK100N60B3H1 IXXX100N60B3H1 10-30kHz 150ns O-264 IF110 100N60B3 0-10-A 100n60

    12N60D1D

    Abstract: 12n60d1
    Text: HGTG12N60D1D 12A, 600V N-Channel IGBT with Anti-Parallel Ultrafast Diode Package Features • 12A,600V JE D E C S T Y LE TO -247 • Latch Free Operation • Typical Fall Time <500ns • Low Conduction Loss • With Anti-Parallel Diode • tRR < 60ns Description


    OCR Scan     		PDF HGTG12N60D1D 500ns 12N60D1D 12n60d1

    20n60b3d

    Abstract: G20N60B
    Text: HGTG20N60B3D 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode Package Features • 40A, 600V at T c = +25°C JEDEC STYLE TO-247 • Typical Fall Time - 140ns at +150°C • Short Circuit Rated • Low Conduction Loss • Hyperfast Anti-Parallel Diode


    OCR Scan     		PDF HGTG20N60B3D 140ns O-247 HGTG20N60B3D RHRP3Q60. 20n60b3d G20N60B

    Untitled

    Abstract: No abstract text available
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS H A R R IS semiconductor 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May 1996 Packaging Features JEDEC TO-220AB • 6A, 600V at Tc = +25°c EMITTER . 600V Switching SOA Capability • Typical Fall Time - 130ns at T j = +150°C


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS O-220AB 130ns O-262AA 1-800-4-HARRIS

    hg 3a 1004

    Abstract: BT 139 F applications note
    Text: HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS ¡H A R R IS S E M I C O N D U C T O R 6A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode May1996 Packaging Features JEDEC TO -220AB • 6A, 600V at Tc = +25°C EMITTER • 600V Switching SOA Capability


    OCR Scan     		PDF HGTP3N60C3D, HGT1S3N60C3D, HGT1S3N60C3DS -220AB ay1996 130ns HGT1S3N60C3DS 1-800-4-HARRIS hg 3a 1004 BT 139 F applications note