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    60N3LH5 DPAK Search Results

    60N3LH5 DPAK Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    TK6R9P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation
    TK5R1P08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK Visit Toshiba Electronic Devices & Storage Corporation

    60N3LH5 DPAK Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    60n3l

    Abstract: 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5
    Text: STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features • ■ Order codes VDSS RDS on max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5


    Original     		STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S O-220 STU60N3LH5 STD60N3LH5 60n3l 60N3LH5 60N3 STD60N3LH5 STU60N3LH5 STP60N3LH5 PDF

    60N3LH5

    Abstract: 60n3l STP60N3LH5 STU60N3LH5 STD60N3LH5 ISD24
    Text: STD60N3LH5 STP60N3LH5, STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, TO-220 STripFET V Power MOSFET Features Type VDSS RDS on max ID STD60N3LH5 30 V 0.008 Ω 48 A STP60N3LH5 30 V 0.0084 Ω 48 A STU60N3LH5 30 V 0.0084 Ω 48 A • RDS(on) * Qg industry benchmark


    Original     		STD60N3LH5 STP60N3LH5, STU60N3LH5 O-220 STP60N3LH5 60N3LH5 60n3l STP60N3LH5 STU60N3LH5 STD60N3LH5 ISD24 PDF

    60n3l

    Abstract: 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK
    Text: STD60N3LH5 STU60N3LH5 N-channel 30 V, 0.0072 Ω, 48 A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID STD60N3LH5 30V 0.008Ω 48A STU60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		STD60N3LH5 STU60N3LH5 60n3l 60N3LH5 60n3 STU60N3LH5 JESD97 STD60N3LH5 smd diode marking b6 ISD24 60N3LH5 DPAK PDF

    60n3l

    Abstract: 60N3LH5 STD60N3LH5
    Text: STD60N3LH5 STU60N3LH5 N-channel 30V - 0.0072Ω - 48A - DPAK - IPAK STripFET V Power MOSFET Features Type VDSS RDS on Max ID STD60N3LH5 30V 0.008Ω 48A STU60N3LH5 30V 0.0084Ω 48A 3 3 • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)


    Original     		STD60N3LH5 STU60N3LH5 60n3l 60N3LH5 PDF

    60n3l

    Abstract: STD60N3LH5-H 60N3LH5 ISD24 60n3 ecopack2 60N3LH5 DPAK
    Text: STD60N3LH5-H N-channel 30 V, 0.0072 Ω, 48 A DPAK STripFET V Power MOSFET Features Type VDSS RDS on max ID STD60N3LH5-H 30 V 0.008 Ω 48 A • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on) ■ Very low switching gate charge


    Original     		STD60N3LH5-H 60n3l STD60N3LH5-H 60N3LH5 ISD24 60n3 ecopack2 60N3LH5 DPAK PDF

    60n3

    Abstract: STD60N3LH5
    Text: STD60N3LH5 N-channel 30 V, 0.0072 Ω typ., 48 A STripFET V Power MOSFET in a DPAK package Datasheet - not recommended for new design Features Order code VDS @ Tjmax RDS on max STD60N3LH5 TAB 35 V ID 0.008 Ω 48 A • RDS(on) * Qg industry benchmark 3 • Extremely low on-resistance RDS(on)


    Original     		STD60N3LH5 DocID14079 60n3 STD60N3LH5 PDF