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    60V N-CHANNEL LOGIC LEVEL QFET Search Results

    60V N-CHANNEL LOGIC LEVEL QFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    60V N-CHANNEL LOGIC LEVEL QFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    AN7254

    Abstract: AN7260 RFW2N06RLE TB334
    Text: RFW2N06RLE Data Sheet Title FW2 6RL bt A, V, 60 m, gic vel, Cha el wer OST utho July 1999 2A, 60V, 0.160 Ohm, Logic Level, N-Channel Power MOSFET Features The RFW2N06RLE N-Channel, logic level, ESD protected, power MOSFET is manufactured using the MegaFET


    Original     		RFW2N06RLE RFW2N06RLE AN7254 AN7260 TB334 PDF

    FP3055LE

    Abstract: f3055l
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. FP3055LE f3055l PDF

    F3055L

    Abstract: FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334
    Text: RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, N-Channel Power MOSFETs Features • 11A, 60V These N-Channel enhancement-mode power MOSFETs are manufactured using the latest manufacturing process technology. This process, which uses feature sizes


    Original     		RFD3055LE, RFD3055LESM, RFP3055LE TA49158. F3055L FP3055LE Fp3055 f3055 AN9321 RFD3055LE RFD3055LESM RFD3055LESM9A RFP3055LE TB334 PDF

    RFD14N06L

    Abstract: RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334
    Text: RFD14N06L, RFD14N06LSM, RFP14N06L Data Sheet January 2002 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs Features • 14A, 60V These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives


    Original     		RFD14N06L, RFD14N06LSM, RFP14N06L RFD14N06L RFD14N06LSM RFD14N06LSM9A RFP14N06L TB334 PDF

    16n06l

    Abstract: AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334
    Text: RFD16N06LESM Data Sheet September 2002 16A, 60V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs Features • 16A, 60V These are N-Channel power MOSFETs manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum


    Original     		RFD16N06LESM 16n06l AN7254 AN7260 RFD16N06LESM RFD16N06LESM9A TB334 PDF

    TA0522

    Abstract: RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N
    Text: RFP15N05L, RFP15N06L Data Sheet January 2002 15A, 50V and 60V, 0.140 Ohm, Logic Level N-Channel Power MOSFETs Features • 15A, 50V and 60V These are N-Channel enhancement mode silicon gate power field effect transistors designed for applications such as switching regulators, switching converters, motor drivers,


    Original     		RFP15N05L, RFP15N06L TA0522. RFP15N05L O-220AB RFP15Nopment. TA0522 RFP15N06L RFP15N05L RFP15N05 AN7254 AN7260 TB334 RFP15N PDF

    kp 1006

    Abstract: HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8
    Text: HUFA76504DK8 Data Sheet 2.3A, 80V, 0.222 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET [ /Title HUF7 Packaging JEDEC MS-012AA 6400S BRANDING DASH K8 /Subject (60V, 0.072 1 2 Ohm, 3 4 4A, NChannel, Symbol Logic Level SOURCE1 (1) UltraFE GATE1 (2)


    Original     		HUFA76504DK8 MS-012AA 6400S kp 1006 HUFA76504DK8 HUFA76504DK8T MS-012AA TB334 HARRIS SOP8 PDF

    FDS9945

    Abstract: No abstract text available
    Text: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.


    Original     		FDS9945 FDS9945 PDF

    76437S

    Abstract: HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 189E1
    Text: HUFA76437P3, HUFA76437S3S Data Sheet November 2000 File Number 4984 64A, 60V, 0.017 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76437P3 HUFA76437S3S


    Original     		HUFA76437P3, HUFA76437S3S O-220AB O-263AB HUFA76437P3 76437S HUFA76437P3 HUFA76437S3S HUFA76437S3ST TB334 189E1 PDF

    76432S

    Abstract: 850E3 HUFA76432P3 HUFA76432S3S HUFA76432S3ST TB334 eds 4994
    Text: HUFA76432P3, HUFA76432S3S Data Sheet November 2000 File Number 4994 55A, 60V, 0.019 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76432P3 HUFA76432S3S


    Original     		HUFA76432P3, HUFA76432S3S O-220AB O-263AB HUFA76432P3 764lopment. 76432S 850E3 HUFA76432P3 HUFA76432S3S HUFA76432S3ST TB334 eds 4994 PDF

    HUFA76445P3

    Abstract: HUFA76445S3S HUFA76445S3ST TB334
    Text: HUFA76445P3, HUFA76445S3S Data Sheet November 2000 File Number 4987 75A, 60V, 0.0075 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76445P3 HUFA76445S3S


    Original     		HUFA76445P3, HUFA76445S3S O-220AB O-263AB HUFA76445P3 HUFA76445P3 HUFA76445S3S HUFA76445S3ST TB334 PDF

    AN7254

    Abstract: RFD4N06L RFD4N06LSM TA09520 TB334
    Text: RFD4N06L, RFD4N06LSM Data Sheet Title FD4 6L, D4 6LS bt A, V, 00 m, gic vel, Cha el wer OSTs utho eyrds terrpoon, gic vel, Cha el wer OSTs, 1AA O2AA June 1999 4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFD4N06L, RFD4N06LSM are N-Channel enhancement


    Original     		RFD4N06L, RFD4N06LSM RFD4N06LSM AN7254 RFD4N06L TA09520 TB334 PDF

    Untitled

    Abstract: No abstract text available
    Text: HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		HUFA76413DK8T PDF

    AN7254

    Abstract: AN9321 AN9322 HUFA76409P3 TB334
    Text: HUFA76409P3 Data Sheet November 2000 File Number 4974 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUFA76409P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.062Ω, VGS = 10V


    Original     		HUFA76409P3 O-220AB 76409P AN7254 AN9321 AN9322 HUFA76409P3 TB334 PDF

    AN7254

    Abstract: AN9321 AN9322 HUFA76407P3 TB334 76407p
    Text: HUFA76407P3 Data Sheet November 2000 File Number 4972 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUFA76407P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V


    Original     		HUFA76407P3 O-220AB 76407P AN7254 AN9321 AN9322 HUFA76407P3 TB334 76407p PDF

    Untitled

    Abstract: No abstract text available
    Text: HUFA76407DK8T_F085 Data Sheet October 2010 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Features Packaging • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V JEDEC MS-012AA BRANDING DASH


    Original     		HUFA76407DK8T MS-012AA PDF

    76429D

    Abstract: AN9321 AN9322 HUF76429D3 HUF76429D3S HUF76429D3ST TB334
    Text: HUF76429D3, HUF76429D3S Data Sheet December 2001 20A, 60V, 0.027 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-251AA JEDEC TO-252AA DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUF76429D3 HUF76429D3S Features • Ultra Low On-Resistance


    Original     		HUF76429D3, HUF76429D3S O-251AA O-252AA HUF76429D3 76429D AN9321 AN9322 HUF76429D3 HUF76429D3S HUF76429D3ST TB334 PDF

    76419S

    Abstract: HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P
    Text: HUFA76419P3, HUFA76419S3S Data Sheet December 2001 27A, 60V, 0.040 Ohm, N-Channel, Logic Level UltraFET Power MOSFETs Packaging JEDEC TO-220AB JEDEC TO-263AB DRAIN FLANGE SOURCE DRAIN GATE GATE SOURCE DRAIN (FLANGE) HUFA76419S3S HUFA76419P3 Features • Ultra Low On-Resistance


    Original     		HUFA76419P3, HUFA76419S3S O-220AB O-263AB HUFA76419P3 76419P 76419S HUFA76419P3 HUFA76419S3S HUFA76419S3ST TB334 76419P PDF

    76439S

    Abstract: HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334 901E4
    Text: HUFA76439P3, HUFA76439S3S Data Sheet July 2002 71A, 60V, 0.014 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC TO-220AB JEDEC TO-263AB SOURCE DRAIN GATE DRAIN FLANGE GATE SOURCE DRAIN (FLANGE) HUFA76439P3 HUFA76439S3S • Ultra Low On-Resistance


    Original     		HUFA76439P3, HUFA76439S3S O-220AB O-263AB HUFA76439P3 O-220AB 76439S HUFA76439P3 HUFA76439S3S HUFA76439S3ST TB334 901E4 PDF

    AN9321

    Abstract: HUFA76407DK8 HUFA76407DK8T MS-012AA TB334 diode 106E
    Text: HUFA76407DK8 Data Sheet December 2001 3.5A, 60V, 0.105 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET Packaging Features JEDEC MS-012AA • Ultra Low On-Resistance - rDS ON = 0.090Ω, VGS = 10V - rDS(ON) = 0.105Ω, VGS = 5V BRANDING DASH 5 1 2


    Original     		HUFA76407DK8 MS-012AA AN9321 HUFA76407DK8 HUFA76407DK8T MS-012AA TB334 diode 106E PDF

    AN7254

    Abstract: AN9321 AN9322 HUFA76409P3 TB334
    Text: HUFA76409P3 Data Sheet December 2001 17A, 60V, 0.070 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUFA76409P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.062Ω, VGS = 10V - rDS(ON) = 0.070Ω, VGS = 5V


    Original     		HUFA76409P3 O-220AB 76409P AN7254 AN9321 AN9322 HUFA76409P3 TB334 PDF

    76407p

    Abstract: 42E1 AN7254 AN9321 AN9322 HUFA76407P3 TB334 diode 106E
    Text: HUFA76407P3 Data Sheet December 2001 12A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFET Power MOSFET Packaging JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUFA76407P3 Features • Ultra Low On-Resistance - rDS(ON) = 0.092Ω, VGS = 10V - rDS(ON) = 0.107Ω, VGS = 5V


    Original     		HUFA76407P3 O-220AB 76407P 76407p 42E1 AN7254 AN9321 AN9322 HUFA76407P3 TB334 diode 106E PDF

    AN7254

    Abstract: AN7260 RFP4N05L RFP4N06L TA09520 TB334
    Text: RFP4N05L, RFP4N06L Data Sheet Title FP4 5L, P4 6L bt A, V d V, 00 m, gic vel, Cha el wer OSTs) utho eyrds ter- July 1999 4A, 50V and 60V, 0.800 Ohm, Logic Level, N-Channel Power MOSFETs Features The RFP4N05L and RFP4N06L are N-Channel enhancement mode silicon gate power field effect transistors designed for


    Original     		RFP4N05L, RFP4N06L RFP4N05L RFP4N06L AN7254 AN7260 TA09520 TB334 PDF

    FDD24AN06LA0

    Abstract: No abstract text available
    Text: FDD24AN06LA0_F085 N-Channel Logic Level PowerTrench MOSFET 60V, 36A, 24mΩ Features Applications • r DS ON = 20mΩ (Typ.), VGS = 5V, ID = 36A • Motor / Body Load Control • Qg(tot) = 16nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management


    Original     		FDD24AN06LA0 O-252AA PDF