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    MMBT2907ALT1

    Abstract: No abstract text available
    Text: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.


    Original     		PDF 2SD602LT1 MMBT2907ALT1 225mW 150mA 500mA 150mA 500mA 100MHz MMBT2907ALT1

    TRANSISTOR 1P

    Abstract: MMBT2907ALT1 2SD602 2SD602LT1
    Text: 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc max =225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Collector-Base Voltage Vcbo Rating Unit 75 1.


    Original     		PDF 2SD602LT1 MMBT2907ALT1 225mW 500mA 150mA 500mA 100MHz 062in TRANSISTOR 1P MMBT2907ALT1 2SD602 2SD602LT1

    MMBT2222ALT1 1P

    Abstract: transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor
    Text: MMBT2222/ALT1 SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907/ALT1 * Collector Dissipation: Pc max =225mW Shandong Yiguang Electronic Joint stock Co., Ltd NPN EPITAXIAL SILICON TRANSISTOR Package:SOT-23 ABSOLUTE MAXIMUM RATINGS at Ta=25℃


    Original     		PDF MMBT2222/ALT1 MMBT2907/ALT1 225mW OT-23 MMBT2222ALT1 1P transistor 2222a CURRENT GAIN MMBT2222 equivalent of transistor MMBT2222A m1b marking transistor 2222a npn 2222 transistor