Untitled
Abstract: No abstract text available
Text: UR2KB60 thru UR2KB100 Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - High case dielectric strength - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
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UR2KB60
UR2KB100
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1312017
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PDF
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ES1JL
Abstract: ru 94v-0
Text: ES1AL thru ES1JL Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
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J-STD-020
2011/65/EU
2002/96/EC
AEC-Q101
JESD22-B102
D1405035
ES1JL
ru 94v-0
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PDF
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MOSFET SOT-23 marking code M2
Abstract: No abstract text available
Text: Si2312BDS Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.031 at VGS = 4.5 V 5.0 0.037 at VGS = 2.5 V 4.6 0.047 at VGS = 1.8 V 4.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si2312BDS
2002/95/EC
O-236
OT-23)
Si2312BDS-T1-E3
Si2312BDS-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
MOSFET SOT-23 marking code M2
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PDF
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Untitled
Abstract: No abstract text available
Text: SRAF520 thru SRAF5150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and
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Original
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SRAF520
SRAF5150
E-326243
2011/65/EU
2002/96/EC
ITO-220AC
AEC-Q101
JESD22-B102
D1309004
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PDF
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Untitled
Abstract: No abstract text available
Text: P4KE SERIES Taiwan Semiconductor CREAT BY ART Transient Voltage Suppressor FEATURES - Excellent clamping capability - Low dynamic impedance - 400W surge capability at 10 / 1000 s waveform - Fast response time: Typically less than 1.0ps from 0 volt to VBR for unidirectional
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Original
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E-326243
2011/65/EU
2002/96/EC
DO-204AL
DO-41)
D1405003
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PDF
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Untitled
Abstract: No abstract text available
Text: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020
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Original
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J-STD-020
2011/65/EU
2002/96/EC
OD123HE
AEC-Q101
JESD22-B102
D1403011
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PDF
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Untitled
Abstract: No abstract text available
Text: KBP201G thru KBP207G Taiwan Semiconductor CREAT BY ART Glass Passivated Bridge Rectifiers FEATURES - Ideal for printed circuit board - Reliable low cost construction utilizing molded plastic technique - High surge current capability - UL Recognized File # E-326243
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KBP201G
KBP207G
E-326243
2011/65/EU
2002/96/EC
JESD22-B102
D1311019
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PDF
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Untitled
Abstract: No abstract text available
Text: SR202 thru SR220 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and
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SR202
SR220
2011/65/EU
2002/96/EC
DO-204AC
DO-15)
AEC-Q101
JESD22-B102
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PDF
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Vishay DaTE CODE tsop-6
Abstract: si3410
Text: Si3410DV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A)a 0.0195 at VGS = 10 V 8 0.023 at VGS = 4.5 V 8 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC
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Si3410DV
2002/95/EC
Si3410DV-T1-E3
Si3410DV-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
Vishay DaTE CODE tsop-6
si3410
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product Si7613DN Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)e,f 0.0087 at VGS = - 10 V - 35 0.014 at VGS = - 4.5V - 35 VDS (V) - 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si7613DN
2002/95/EC
Si7613DN-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: New Product B350A, B360A Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Low forward voltage drop, low power losses • High efficifieency • High surge capability
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B350A,
B360A
J-STD-020,
2002/95/EC
2002/96/EC
DO-214AC
DO-21trademarks
2011/65/EU
2002/95/EC.
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PDF
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IRFZ48 mosfet driver
Abstract: No abstract text available
Text: IRFZ48RS, IRFZ48RL, SiHFZ48RS, SiHFZ48RL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Advanced Process Technology • Dynamic dV/dt • 175 °C Operating Temperature • Fast Switching
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Original
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IRFZ48RS,
IRFZ48RL,
SiHFZ48RS
SiHFZ48RL
IRFZ48,
SiHFZ48
2002/95/EC
O-262)
O-263)
2011/65/EU
IRFZ48 mosfet driver
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PDF
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5302D
Abstract: No abstract text available
Text: DG428, DG429 Vishay Siliconix Single 8-Ch/Differential 4-Ch Latchable Analog Multiplexers DESCRIPTION FEATURES The DG428, DG429 analog multiplexers have on-chip address and control latches to simplify design in microprocessor based applications. Break-before-make
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Original
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DG428,
DG429
DG429
DG428
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
5302D
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PDF
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SI4431CDY
Abstract: No abstract text available
Text: New Product Si4431CDY Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.032 at VGS = - 10 V - 9.0 0.049 at VGS = - 4.5 V - 5.8 VDS (V) - 30 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET
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Original
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Si4431CDY
Si4431CDY-T1-E3
Si4431CDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7456DP Vishay Siliconix N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 100 RDS(on) (Ω) ID (A) 0.025 at VGS = 10 V 9.3 0.028 at VGS = 6.0 V 8.8 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V, Full-/Half-Bridge DC/DC
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Si7456DP
Si7456DP-T1-E3
Si7456DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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Untitled
Abstract: No abstract text available
Text: Si7846DP Vishay Siliconix N-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 150 0.050 at VGS = 10 V 6.7 PowerPAK SO-8 APPLICATIONS S 6.15 mm • Primary Side Switch for High Density DC/DC • Telecom/Server 48 V DC/DC • Industrial and 42 V Automotive
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Si7846DP
Si7846DP-T1-E3
Si7846DP-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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si1922
Abstract: SI1922EDH
Text: Si1922EDH Vishay Siliconix Dual N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.198 at VGS = 4.5 V 1.3a 0.225 at VGS = 2.5 V 1.3a 0.263 at VGS = 1.8 V 1.3a VDS (V) 20 Qg (Typ.) 0.9 nC • Halogen-free According to IEC 61249-2-21
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Si1922EDH
2002/95/EC
OT-363
SC-70
Si1922EDH-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
si1922
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PDF
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Untitled
Abstract: No abstract text available
Text: VS-10ETF0.FPPbF Series, VS-10ETF0.FP-M3 Series www.vishay.com Vishay Semiconductors Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base cathode • 150 °C max. operation junction temperature • Designed and JEDEC-JESD47 2 qualified according to • Fully isolated package VINS = 2500 VRMS
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VS-10ETF0.
JEDEC-JESD47
E78996
O-220
2002/95/EC
O-220FP
2011/65/EU
2002/95/EC.
2002/95/EC
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PDF
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95xxx
Abstract: si3434 si3495
Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21
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Si3495DV
2002/95/EC
Si3495DV-T1-E3
Si3495DV-T1-GE3
95xxx
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
95xxx
si3434
si3495
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PDF
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VSB3200
Abstract: vsb320
Text: New Product VSB3200 Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Trench MOS Schottky technology • Low forward voltage drop, low power losses TMBS • High efficiency operation • Solder dip 275 °C max. 10 s, per JESD 22-B106
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VSB3200
22-B106
2002/95/EC
2002/96/EC
DO-201AD
DO-201AD
2011/65/EU
2002/95/EC.
2011/65/EU.
VSB3200
vsb320
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PDF
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Untitled
Abstract: No abstract text available
Text: Si4804BDY Vishay Siliconix Dual N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.022 at VGS = 10 V 7.5 0.030 at VGS = 4.5 V 6.5 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • PWM Optimized
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Si4804BDY
2002/95/EC
Si4804BDY-T1-E3
Si4804BDY-T1-GE3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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TO-252AA Mechanical dimensions
Abstract: VS-50WQ04
Text: VS-50WQ04FN-M3 Vishay Semiconductors Schottky Rectifier, 5.5 A FEATURES Base cathode 4, 2 1 Anode D-PAK TO-252AA • Low forward voltage drop • Guard ring for enhanced ruggedness and long term reliability • Halogen-free according to IEC 61249-2-21 definition
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VS-50WQ04FN-M3
2002/95/EC
O-252AA)
J-STD-020,
VS-50WQ04FN-M3
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
TO-252AA Mechanical dimensions
VS-50WQ04
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PDF
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Untitled
Abstract: No abstract text available
Text: Si1034X Vishay Siliconix N-Channel 20 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () ID (mA) 5 at VGS = 4.5 V 200 7 at VGS = 2.5 V 175 9 at VGS = 1.8 V 150 10 at VGS = 1.5 V 50 20 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET: 1.5 V Rated
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Si1034X
2002/95/EC
SC-89
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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PDF
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TFPT1206L1002
Abstract: thermistor ptc smd 0805
Text: TFPT Vishay SMD PTC - Nickel Thin Film Linear Thermistors FEATURES • Alumina substrate base with nickel based PTC thin film element 0603, 0805 and 1206 sizes available Available in tape and reel packaging Standard R25 tolerances: ± 0.5 %, ± 1 %, ± 5 %
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Original
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E148885
2002/95/EC
R25-value
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
TFPT1206L1002
thermistor ptc smd 0805
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PDF
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