x-ray cmos
Abstract: HX6409 6409D 6218 FIFO 065um capacitor enw
Text: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit
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HX6409/HX6218/HX6136
HX6409,
HX6218,
HX6136
HX6409
4096-word
HX6218
2048-word
18-bit
x-ray cmos
6409D
6218 FIFO
065um
capacitor enw
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PDF
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065um
Abstract: No abstract text available
Text: FIFO – HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9bit memory array; the HX6218 is a 2048-word by 18-bit
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HX6409/HX6218/HX6136
HX6409,
HX6218,
HX6136
HX6409
4096-word
HX6218
2048-word
18-bit
065um
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PDF
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HX6409
Abstract: D1878
Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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HX6409
HX6218
HX6136
1x106
1x1014
1x109
1x1011
HX6409
D1878
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PDF
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Untitled
Abstract: No abstract text available
Text: FIFO - HX6409/HX6218/HX6136 First-In First-Out Memory HX6409/HX6218/HX6136 The HX6409, HX6218, and HX6136 are high speed, low In addition, the three FIFOs have an output enable pin power, first-in first-out memories with clocked read and write OE and a master reset pin (MR). The read (CKR)
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Original
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HX6409/HX6218/HX6136
HX6409,
HX6218,
HX6136
HX6409
4096-word
HX6218
2048-word
18-bit
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PDF
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HX6409
Abstract: No abstract text available
Text: Aerospace Electronics FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 µm Process (Leff = 0.65µm) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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Original
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HX6409
HX6218
HX6136
1x106
1x1014
1x109
1x1011
HX6409
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PDF
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Untitled
Abstract: No abstract text available
Text: HX6409/HX6218/HX6136 First-In First-Out Memory The HX6409, HX6218, and HX6136 are high speed, low power, first-in first-out FIFO memories with clocked read and write interfaces. The HX6409 is a 4096-word by 9-bit memory array; the HX6218 is a 2048-word by 18-bit memory array; and the HX6136
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Original
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HX6409/HX6218/HX6136
HX6409,
HX6218,
HX6136
HX6409
4096-word
HX6218
2048-word
18-bit
HX6136
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PDF
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ALI chipset Ali 3516
Abstract: SEM 2006 6216 static ram sem 2005 ALI chipset Ali 3510 vl82c483 ali 3516 CMOS 5408 PAL Decoder 16L8 1K x 8 static ram
Text: June 1996 Cypres Semiconductor Corporation NUMERIC DEVICE INDEX Document Number Device Number 5000 5000 3518 3518 3519 CY101E383 CY10E383 CY2071 CY2081 CY2250 3522 3509 CY2252 CY2254A 3510 CY2255 3517 CY2257 3520 CY2260 3511 3023 3024 3011 3013 3019 3006 3023
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CY101E383
CY10E383
CY2071
CY2081
CY2250
CY2252
CY2254A
CY2255
CY2257
CY2260
ALI chipset Ali 3516
SEM 2006
6216 static ram
sem 2005
ALI chipset Ali 3510
vl82c483
ali 3516
CMOS 5408
PAL Decoder 16L8
1K x 8 static ram
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PDF
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D35B 60
Abstract: D35B D35B 60 37 D35A D10A D11A D12A D15A LH5420 LH543620
Text: LH5420 256 x 36 × 2 Bidirectional FIFO FEATURES • TTL/CMOS-Compatible I/O • Fast Cycle Times: 25/30/35 ns • Space-Saving PQFP Package • Two 256 × 36-bit FIFO Buffers • PQFP to PGA Package Conversion * • Full 36-bit Word Width • Selectable 36/18/9-bit Word Width
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LH5420
36-bit
36/18/9-bit
132-pin
132-Pin,
PQFP132-P-S950)
LH5420P-25
D35B 60
D35B
D35B 60 37
D35A
D10A
D11A
D12A
D15A
LH5420
LH543620
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PDF
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nte 7225
Abstract: STi 5197 register configuration sm 559 b* siemens csc 5151 ESCC2 fsca PLFBGA-80-2 sti 5189 passat B6 RFC1662
Text: ICs for Communications PPP and HDLC Synchronous Serial Controller with 2 Channels PASSAT PEB 20525 Version 1.1 PEF 20525 Version 1.1 Preliminary Data Sheet 09.99 DS 2 • PEB 20525, PEF 20525 Revision History: Current Version: 09.99 Previous Version: 07.99
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GPA09236
P-LFBGA-80-2
GPP09189
P-TQFP-100-3
nte 7225
STi 5197 register configuration
sm 559 b* siemens
csc 5151
ESCC2
fsca
PLFBGA-80-2
sti 5189
passat B6
RFC1662
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PDF
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xc2000 instruction set
Abstract: PEC 539 ES 61162 Diode DX2A XC2387 XC2287-XXF66L eeprom 25xxx programmer EEPROM 25xxx cm 20 mdl 12h XC2365
Text: U s e r ’ s Ma n u a l , V 1 . 0 , J u n e 2 0 0 7 XC2000 Derivatives ar y 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance P re li m in V o l u m e 1 o f 2 : S y s t e m U n i ts M i c r o c o n t r o l l e rs
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XC2000
32-Bit
RBUF01SRH
RBUF01SRL
xc2000 instruction set
PEC 539
ES 61162
Diode DX2A
XC2387
XC2287-XXF66L
eeprom 25xxx programmer
EEPROM 25xxx
cm 20 mdl 12h
XC2365
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PDF
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SWITCHYARD LAYOUT
Abstract: abb REL531 dirana SWITCHYARD REL531 cm73 SWITCHYARD and bus bar arrangement abb switchyard manual rel 531 cq61_cl
Text: 1 User’s Guide contents 2 Introduction 3 Installation 4 General functions 5 Protection functions 6 Control functions 7 Monitoring functions 8 Index 9 Diagrams ABB Network Partner AB User’s Guide REC 561 Bay level control terminal 1MRK 511 009-UEN Version 1.0-00
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Original
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009-UEN
S-721
144-XEN
XO39-
188-XEN
SWITCHYARD LAYOUT
abb REL531
dirana
SWITCHYARD
REL531
cm73
SWITCHYARD and bus bar arrangement
abb switchyard manual
rel 531
cq61_cl
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PDF
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HP 0AA8h
Abstract: srx 2039 PEC 539 T 1829-1 cev smd ct3 "current sensor" Diode DX2A smd diode code 62F smd transistor 61s L-12
Text: U s e r ’ s Ma n u a l , V 1 . 0 , J u n e 2 0 0 7 XC2000 Derivatives ar y 1 6 / 3 2 - B i t S i n g l e -C h i p M i c r o c o n t r o l l e r w i t h 32-Bit Performance P re li m in V o l u m e 2 o f 2 : P e r i p h e r a l U n i t s M i c r o c o n t r o l l e rs
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XC2000
32-Bit
Technolog-103
RBUF01SRH
RBUF01SRL
HP 0AA8h
srx 2039
PEC 539
T 1829-1
cev smd
ct3 "current sensor"
Diode DX2A
smd diode code 62F
smd transistor 61s
L-12
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PDF
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TMS320f24xx DSP
Abstract: instruction set architecture intel i7 SPRU430D TMS320F24XX TMS320f24xx datasheet INSTRUCTION SET FOR TMS320F2812 3F801 spru430 TMS320f2812 pwm vector code source lt 6249
Text: TMS320C28x DSP CPU and Instruction Set Reference Guide Literature Number: SPRU430D August 2001 − Revised March 2004 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries TI reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue
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TMS320C28x
SPRU430D
Index-13
loc16,
loc16
16bit
TMS320f24xx DSP
instruction set architecture intel i7
SPRU430D
TMS320F24XX
TMS320f24xx datasheet
INSTRUCTION SET FOR TMS320F2812
3F801
spru430
TMS320f2812 pwm vector code source
lt 6249
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PDF
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ande RY 227
Abstract: ande RY 228 27AD Y/BIT 3713 tba 8227 SK 6211 179d 17C4 adcb 27 M68HC11
Text: M68HC16 Family CPU16 Reference Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and
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M68HC16
CPU16
ande RY 227
ande RY 228
27AD
Y/BIT 3713
tba 8227
SK 6211
179d
17C4
adcb 27
M68HC11
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PDF
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ande RY 227
Abstract: ande RY 228 ande RY 192 37AF BF 179C BIT 3713 ic tba 220 datasheet M68HC11 M68HC16 CPU16 freescale
Text: Freescale Semiconductor, Inc. M68HC16 Family CPU16 Freescale Semiconductor, Inc. Reference Manual Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability
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M68HC16
CPU16
ande RY 227
ande RY 228
ande RY 192
37AF
BF 179C
BIT 3713
ic tba 220 datasheet
M68HC11
CPU16 freescale
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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OCR Scan
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HX6409
HX6218
HX6136
1x106rad
1x101
1x109
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products Preliminary FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 n.m Process (Lelf = 0.65}im) • Read/Write Cycle Times
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OCR Scan
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HX6409
HX6218
HX6136
1x10U
1x109
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products HX6409 HX6218 HX6136 FIFO— SOI FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jim Process (Leff = 0.65|am) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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OCR Scan
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HX6409
HX6218
HX6136
1x106
1x101
1x109
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PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products FIFO—SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 jam Process (Leff = 0.65|im) OTHER • Read/Write Cycle Times <35 ns (-55° to 125°C)
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OCR Scan
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HX6409
HX6218
HX6136
1x106rad
1x101
1x109
|
PDF
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Untitled
Abstract: No abstract text available
Text: Aerospace Electronics FIFO— SOI HX6409 HX6218 HX6136 FEATURES • 1K x 36, 2K x 18, 4K x 9 Organizations OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 |a,m Process (Leff = 0.65|a,m) • Read/Write Cycle Times <35 ns (-55° to 125°C)
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OCR Scan
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HX6409
HX6218
HX6136
1x106rad
1x101
1x109
|
PDF
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products FIFO— SOI HX6409 HX6218 HX6136 FEATURES • • 1 K x 36, 2 K x 18, 4 K x 9 O rganizations Fabricated with RICMOS IV Silicon on Insulator SOI 0.8 j^m Process (Leff = 0.65|am) OTHER • R ead/W rite Cycle Tim es <35 ns (-55° to 125°C)
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OCR Scan
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1x10srad
1x1014
1x109
1x1011
1x1010
HX6409
HX6218
HX6136
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PDF
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Intel AP-401
Abstract: AP-316 29204* intel lm2391
Text: m u APPLICATION NOTE AP-316 October 1990 Using Flash Memory for In-System Reprogrammable Nonvolatile Storage SAUL ZALES DALE ELBERT APPLICATIONS ENGINEERING INTEL CORPORATION Order Number: 292046-003 6-203 6 USING FLASH MEMORY FOR IN-SYSTEM REPROGRAMMABLE
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OCR Scan
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AP-316
LA19d,
LA18d,
LA17d,
LA19d
LA18d
LA17d
LA16d
Intel AP-401
AP-316
29204* intel
lm2391
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PDF
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D2SB 73
Abstract: No abstract text available
Text: LH5420 256 x 36 x 2 Bidirectional FIFO FEATURES • TTL/CMOS-Compatible I/O • Fast Cycle Times: 25/30/35 ns • Space-Saving PQFP Package • Two 256 • PQFP to PGA Package Conversion * x 36-bit FIFO Buffers • Full 36-bit Word Width • Selectable 36/18/9-bit Word Width
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OCR Scan
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LH5420
36-bit
36/18/9-bit
132-pin
132-Pin,
PQFP132-P-S950)
LH5420P-25
D2SB 73
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PDF
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intel 7114 bubble
Abstract: Intel BUBBLE 7114 intel E7250 dave van ess
Text: ARTICLE REPRINT AR-250 November 1982 Electronic Design R e p rin te d w ith p e r m is s io n fro m E le c t r o n ic D e s ig n , V o lu m e 3 0 , N u m b e r 23. C o p y r ig h t H a y d e n P u b lish in g , inc., J982. ORDER NUMBER: 210S42-001 AR-250 BehlndTheCover
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OCR Scan
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AR-250
210S42-001
intel 7114 bubble
Intel BUBBLE
7114 intel
E7250
dave van ess
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PDF
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