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    629 08103 Search Results

    629 08103 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DR0810-393L Coilcraft Inc General Purpose Inductor, 39uH, 10%, 1 Element, ROHS COMPLIANT Visit Coilcraft Inc
    RFB0810-330L Coilcraft Inc General Purpose Inductor, 33uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
    DR0810-334L Coilcraft Inc General Purpose Inductor, 330uH, 10%, 1 Element, ROHS COMPLIANT Visit Coilcraft Inc
    DR0810-394L Coilcraft Inc General Purpose Inductor, 390uH, 10%, 1 Element, ROHS COMPLIANT Visit Coilcraft Inc
    RFB0810-331L Coilcraft Inc General Purpose Inductor, 330uH, 10%, 1 Element, Ferrite-Core, ROHS COMPLIANT Visit Coilcraft Inc
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    629 08103 Price and Stock

    Caplugs 2908103Z1NE1

    Storage Boxes & Cases FRAMES FOR 8 WELL STRIPS
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    Mouser Electronics 2908103Z1NE1
    • 1 $3.7
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    • 100 $3.09
    • 1000 $2.5
    • 10000 $1.99
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    Laird, A DuPont Business 9862908103

    EMI Gaskets, Sheets, Absorbers & Shielding
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    Sager 9862908103
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    Laird, A DuPont Business 9762908103

    EMI Gaskets, Sheets, Absorbers & Shielding
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Sager 9762908103
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    629 08103 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    capacitor 1n0 z

    Abstract: capacitor 1n0 4n7 CAPACITOR 2n22222 n39 capacitor 2222 capacitor E12 Series capacitor 629 08223 w 08102 K2000
    Text: 1138877 Features: • General purpose. • Coupling and decoupling. • Space saving. Applications: In electronic circuits where non-linear change of capacitance with temperature is permissible and low losses are not essential, i.e. coupling and decoupling. Because of their small size the capacitors are suitable for use in circuitry with high component density.


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    MBB284

    Abstract: BFG35 amplifier
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG35 NPN 4 GHz wideband transistor Product specification Supersedes data of November 1992 File under discrete semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION


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    BFG35 OT223 BFG55. BFG35 MSB002 OT223. MBB284 BFG35 amplifier PDF

    BFG135 amplifier

    Abstract: BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG135 NPN 7GHz wideband transistor Product specification File under discrete semiconductors, SC14 1995 Sep 13 Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor


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    BFG135 OT223 MBB285 MBB287 BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR BFG135 MEA946 MEA945 MBB298 PDF

    MBB754

    Abstract: BFG198 npn 2222 transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG198 NPN 8 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 1995 Sep 12 Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a


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    BFG198 OT223 MSB002 OT223. MBB754 BFG198 npn 2222 transistor PDF

    thickness of microstripline

    Abstract: BFG31 BFG97 MBB773
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG97 NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transistor


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    BFG97 OT223 BFG31. MSB002 OT223. thickness of microstripline BFG31 BFG97 MBB773 PDF

    BFG35

    Abstract: TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


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    BFG35 OT223 OT223. MSA035 TRANSISTOR FQ BFG35 amplifier BHS111 npn 2222 transistor TRANSISTOR NPN c4 nf C2570 PDF

    npn 2222 transistor

    Abstract: BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.


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    BFG198 OT223 7110fl2b MSA035 OT223. npn 2222 transistor BFG198 MS80 din 45325 2222 TRANSISTOR NPN Philips 2222 114 capacitor 2222 851 PDF

    BFG35 amplifier

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION BFG35 PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features high output voltage capabilities.


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    OT223 I3FG55. BFG35 OT223. MBB364 BFG35 amplifier PDF

    philips 22 ah 590

    Abstract: npn 2222 transistor 629 08103 BFG198 TRANSISTOR FQ Philips 2222 032
    Text: Philips Semiconductors Product specification NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic S O T 223 envelope, intended for wideband amplifier applications. The device features a high gain and excellent output voltage capabilities.


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    BFG198 OT223 7110fl2b MSA035 OT223. 711002b philips 22 ah 590 npn 2222 transistor 629 08103 TRANSISTOR FQ Philips 2222 032 PDF

    Philips 2222 050 capacitor

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


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    BFG135 OT223 MSB002 OT223. 711062b 110fi2b 711Da2b Philips 2222 050 capacitor PDF

    BFG135 power amplifier for 900Mhz

    Abstract: BFG135 amplifier BFG135 A amplifier bfg135 BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz
    Text: Philips Semiconductors Product specification NPN 7GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated


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    BFG135 OT223 711Qfl2ti 7110fl2b BFG135 BFG135 power amplifier for 900Mhz BFG135 amplifier BFG135 A amplifier BFG135 TRANSISTOR MBB300 BFG135 - BFG135 microstripline npn 2222 transistor power amplifier specifications at 900Mhz PDF

    BFG134

    Abstract: BJE 247
    Text: b t . 5 3 ^3 1 Philips Semiconductors D D 3131S 36 □ M A P X Product specification NPN 7 GHz wideband transistor ^ BFG134 N AUER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-lead double-emitter plastic SOT103 envelope, intended for


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    3131S BFG134 OT103 OT103. BFG134 BJE 247 PDF

    NT 407 F TRANSISTOR

    Abstract: Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor
    Text: Philips Sem iconductors • N bbS3R31 AMER 0024SSb 7bS H IA P X P H IL IP S /D IS C R E T E b7E Product specification D NPN 8 GHz wideband transistor DESCRIPTION BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband simplifier applications.


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    BFG198 OT223 MS8002 OT223. NT 407 F TRANSISTOR Philips CD 303 2222 595 npn 2222 transistor BFG198 MS8002 0450 7N 2222 443 TRANSISTOR D 471 MRA transistor PDF

    BFG134

    Abstract: bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379
    Text: P hilip ^em icon d u cto r^^ ^ b t iS B 'ìB l 0031315 16D • A P X ^^P ro du c^p eo lficatio n NPN 7 GHz wideband transistor BFG134 N AHER PHILIPS/DISCRETE b^E D PINNING DESCRIPTION NPN planar epitaxial transistor in a 4-tead double-emitter plastic SOT103 envelope, intended for


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    BFG134 BFG134 bt 1690 transistor transistor bt 1630 resistor 2322 194 philips bt 1690 philips 2222 372 DD313 752 J 1600 V CAPACITOR LC 3524 2222 379 PDF

    MB87S

    Abstract: No abstract text available
    Text: • bbS3R31 0 0 2 ^ 5 b 7bS « A P X “ N AUER PHILIPS/DISCRETE b7E D NPN 8 GHz wideband transistor DKT c ^ Philips Semiconductors DESCRIPTION Product specification BFG198 PINNING NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications.


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    bbS3R31 BFG198 OT223 MB87S PDF

    BFR134

    Abstract: 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379
    Text: Product specification Philips Semiconductors BFR134 NPN 7 GHz wideband transistor PHILIPS INTERNATIONAL DESCRIPTION NPN transistor in a plastic SOT37 envelope. It is primarily intended for use in MATV and microwave amplifiers, such as aerial amplifiers, radar


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    BFR134 BFR134 2322 712 2322-712 Philips fr 153 30 philips resistor 2322 763 Transistor 933 2222 372 transistor J 3305 109 transistor 33 db 2222 379 PDF

    Untitled

    Abstract: No abstract text available
    Text: nu. . 0 . J Philips Semiconductors • ^53=131 0 0 2 ^ 2 3 21b « A P X " n AMER PHILIPS/DISCRETE NPN 7 GHz wideband transistor DESCRIPTION Product specification L7E T> BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


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    BFG135 OT223 PDF

    D 823 transistor

    Abstract: transistor PH ON 823 m
    Text: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage


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    OT223 BFG31. BFG97 D 823 transistor transistor PH ON 823 m PDF

    BFR134

    Abstract: No abstract text available
    Text: Philips Semiconductors bbS3T31 0 D 3 n i 2 tit7 M A P X Product specification NPN 7 GHz wideband transistor •■■■ ■■■■■■■. DESCRIPTION N BFR134 AnER P H IL IP S /D IS C R E T E B - b lE PINNING NPN transistor in a plastic SOT37


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    bbS3T31 BFR134 BFR134 PDF

    philips resistor 2322 763

    Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
    Text: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage


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    BFG97 OT223 BFG31. OT223 philips resistor 2322 763 bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S PDF

    BFR134

    Abstract: 2322-712 2222 372 2322 712 philips tag c2 680 800 2322 712 2222 379 DIN45004B B 1449 transistor transistor A 1264
    Text: Philips Semiconductors • bb53q31 o o a m g tit7 HAPX Product specification NPN 7 GHz wideband transistor ■■■■■■■■■■■■. DESCRIPTION BFR134 N ApiER PHILIPS/DISCRETE biz D m PINNING NPN transistor in a plastic SOT37 envelope. PIN


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    bfa53 BFR134 MBBS16 BFR134 2322-712 2222 372 2322 712 philips tag c2 680 800 2322 712 2222 379 DIN45004B B 1449 transistor transistor A 1264 PDF

    xl 1225 transistor

    Abstract: BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300
    Text: nu. e „ • Philips Semiconductors 1— 1 b 1353131 0024123 21b ■ APX AMER PH IL IP S/D IS CR ET E Product specification L7E D NPN 7 GHz wideband transistor DESCRIPTION BFG135 PINNING NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband


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    BFG135 OT223 MSB002 OT223. xl 1225 transistor BFG135 amplifier transistor B 1184 BFG135 bfg135 scattering transistor d 1557 603-30-1 BFG135 A amplifier 2222 379 UBB300 PDF

    Untitled

    Abstract: No abstract text available
    Text: bb53^31 Philips Semiconductors QQgMflgg 335 WAPX Product specification NPN 4 GHz wideband transistor ^ BFG35 M APIER PHILIPS/DISCRETE b7E D DESCRIPTION PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope, intended for wideband amplifier applications. It features


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    BFG35 OT223 BFG55. PDF

    transistor D 5032

    Abstract: 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246
    Text: bbS 3 q 31 Philips Semiconductors ODEMflga 335 W A P X Product specification NPN 4 GHz wideband transistor M ANER DESCRIPTION ^ PHILIPS/DISCRETE L7E BFG35 D _ PINNING NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. Intended for wideband


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    bbS3q31 BFG35 OT223 BFG55. 500MHz transistor D 5032 5032 transistor philips FP 9600 2222 372 d 5032 transistor APX 2600 TRANSISTOR PHL 0284 2222 379 2322 731 D0246 PDF