569T
Abstract: K77 transistor b-3564
Text: -+y+{ 57|0.1.{674* -.,- 329*4 4*/{: +?<IJG?H P 59@ jn`kZ_`e^ ZXgXY`c`kp P 629bT [`\c\Zki`Z jki\e^k_ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ P EcXddXY`c`kp ZcXjj XZZfi[`e^ kf SJ=80 T14 P BRH 694 XmX`cXYc\ P Nif[lZk `e XZZfi[XeZ\ kf HDB :477915 XmX`cXYc\ P 5 Eifd @ Xe[ 5 Eifd B Zfe]`^liXk`fej
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629bT
D57895;
569T
K77 transistor
b-3564
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ixc 844
Abstract: 536g EZ 728 K77 transistor 569T bf20 QM60 EZ 941
Text: -+y+{ 57|0.1.{674* -.,- 329*4 4*/{: +?<IJG?H P 59@ jn`kZ_`e^ ZXgXY`c`kp P 629bT [`\c\Zki`Z jki\e^k_ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ P EcXddXY`c`kp ZcXjj XZZfi[`e^ kf SJ=80 T14 P BRH 694 XmX`cXYc\ P Nif[lZk `e XZZfi[XeZ\ kf HDB :477915 XmX`cXYc\ P 5 Eifd @ Xe[ 5 Eifd B Zfe]`^liXk`fej
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629bT
D57895;
ixc 844
536g
EZ 728
K77 transistor
569T
bf20
QM60
EZ 941
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HAF1004
Abstract: ADE-208-629B
Text: HAF1004 L , HAF1004(S) Silicon P Channel MOS FET Series Power Switching REJ03G0028-0500Z (Previous ADE-208-629B (Z) Rev.5.00 2003.04.29 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the
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HAF1004
REJ03G0028-0500Z
ADE-208-629B
ADE-208-629B
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Bst R63 H
Abstract: HB526C464EN 24C02 HB526C264EN HB526C264EN-10 HB526C264EN-12 HB526C464EN-10 HB526C464EN-12 Hitachi DSA0015 Nippon capacitors
Text: HB526C264EN Series, HB526C464EN Series 1,048,576-word x 64-bit × 2-bank Synchronous Dynamic RAM Module 1,048,576-word × 64-bit × 4-bank Synchronous Dynamic RAM Module ADE-203-629B Z Rev. 2.0 Mar. 17, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C264EN
HB526C464EN
576-word
64-bit
ADE-203-629B
HB526C264EN,
Bst R63 H
24C02
HB526C264EN-10
HB526C264EN-12
HB526C464EN-10
HB526C464EN-12
Hitachi DSA0015
Nippon capacitors
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HD74ALVC1G07
Abstract: Hitachi DSA0047
Text: HD74ALVC1G07 Single Buffer / Driver with Open Drain ADE-205-629B Z Rev.2 Apr. 2002 Description The HD74ALVC1G07 has a buffer in a 5 pin package. Low voltage and high speed operation is suitable for the battery powered products (e.g., notebook computers), and the low power consumption extends the
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HD74ALVC1G07
ADE-205-629B
HD74ALVC1G07
D-85622
D-85619
Hitachi DSA0047
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MN61
Abstract: 7429 EZ 825 BOB46445445
Text: 42+*~}42+*+~ 7585-=>;1 4534 :9@1; ;16-A 2EBOPMEN V 74@ jn`kZ_`e^ ZXgXY`c`kp V NBA Zf`c k\id`eXcj0 `[\Xc ]fi _\Xmp [lkp cfX[ V 629bT [`\c\Zki`Z jki\e^k_ .Y\kn\\e Zf`c Xe[ ZfekXZkj/ V Se\eZcfj\[ kpg\ XmX`cXYc\ V BcXjj E `ejlcXk`fe XmX`cXYc\ V Dem`ifed\ekXc ]i`\e[cp gif[lZk .PfGQ Zfdgc`Xek/
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629bT
D57895;
BOB46445445
74TCB
MN61
7429
EZ 825
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Hitachi DSA00279
Abstract: No abstract text available
Text: HAF1004 L , HAF1004(S) Silicon P Channel MOS FET Series Power Switching ADE-208-629B (Z) 3rd. Edition May 2002 Description This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down
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HAF1004
ADE-208-629B
Hitachi DSA00279
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USB B-FEMALE
Abstract: SMD GG
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: LCP FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLE A ENVIRONMENTAL
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UL94-V0
E323964
614/629-B
08-NOV-11
22-JUN-11
29-APR-11
USB B-FEMALE
SMD GG
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63b46
Abstract: 61B46 SPRU074C 629Ah 610C 610E 611C 612C 612E 614C
Text: TMS320x281x, 280x DSP Enhanced Controller Area Network eCAN Reference Guide Literature Number: SPRU074C May 2002 − Revised February 2005 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications,
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TMS320x281x,
SPRU074C
63b46
61B46
SPRU074C
629Ah
610C
610E
611C
612C
612E
614C
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A 6259H
Abstract: 63b46 spru074e 61B46 6290h 6259H 63cf 6250H 631E-6 61a0-61a1h
Text: TMS320x28xx, 28xxx DSP Enhanced Controller Area Network eCAN Reference Guide Literature Number: SPRU074E May 2002 − Revised October 2006 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any
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TMS320x28xx,
28xxx
SPRU074E
A 6259H
63b46
spru074e
61B46
6290h
6259H
63cf
6250H
631E-6
61a0-61a1h
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Untitled
Abstract: No abstract text available
Text: ML6209 123456789AB9C7D7EBF78997279FAC7 7 87 BA7 B 9!7"#$$7C B %7 7 2 2 '1872 7, 9A7' C B(2 A7 F937 35 )74755 +!7 7 2 777 7 7 7 7 455 )747655 +7 1&B 77'AA9(37 7 2 2 2 77 7 7 7 7 675 +7 EBF*7+ A937684)7976867)7:75;7
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ML6209
123456789AB9C7D7EBF
F937687
919A9(
P11/14
P12/14
P13/14
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694V
Abstract: 54B0 529ff 68ve
Text: 1/} 9;+4252*:;8. 25:.84.-2*:. 76=.8 8.3*> /B?MNKBL T 54B lpbm\abg` \ZiZ[bebmr T 8dV bfinel^ pbmalmZg] ohemZ`^ .[^mp^^g \hbe Zg] \hgmZ\ml/ T 5 Ghkf B Zg] 5 Ghkf D \hg_b`nkZmbhgl Gbe^ Nh2>F57895; T Sn[fbgbZmnk^0 ab`a l^glbmbo^0 PDC eZrhnm T PeZlmb\ l^Ze^] mri^ _hk ZnmhfZmb\ pZo^ lhe]^kbg`
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F57895;
68VED/
894fW
44fW/
774fW
569VBD
15BT35DT/
VBD374V\m
694V
54B0
529ff
68ve
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USB B-FEMALE
Abstract: GG SMD smd A4
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: NYLON 6T FLAMABILITY RATING: UL94-V0 COLOR: BLACK CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS NI PLATED QUALITY CLASS: 1500 MATING CYCLE A ENVIRONMENTAL
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UL94-V0
E323964
614/629-B
18-JUN-12
08-NOV-11
22-JUN-11
29-APR-11
USB B-FEMALE
GG SMD
smd A4
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614 004 161 21
Abstract: E323964
Text: 1 2 3 4 5 TECHNICAL CHARACTERISTICS MATERIAL INSULATOR: PBT COLOR: WHITE CONTACT MATERIAL: COPPER ALLOYS CONTACT TYPE: STAMPED CONTACT PLATING: SELECTIVE GOLD SHIELDING: BRASS Ni PLATED QUALITY CLASS: 1500 MATING CYCLES A ENVIRONMENTAL OPERATING TEMPERATURE: -40 UP TO 105°C
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UL94-V0
E323964
614/629-B
22-MAR-2011
17-JAN-2011
614 004 161 21
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omron 8567
Abstract: crouzet 88 810.1 AQH2223 equivalent OMRON 1230 opto 12VDC sf 249 crouzet 88 810.0 Automation Controls panasonic - elevator door controller manual seiko lcd m3214 crouzet 88 810.0 coto reed relay 2063
Text: ELECTROMECHANICAL Switches Basic / Snap Switches Cherry Electrical Products . . . . . . . . . . 1819, 1820, 1821 Mountain Switch . . . . . . . . . . Available at mouser.com Honeywell . . . . . . . . . . . . . . . . . . 1822, 1823, 1824 Omron . . . . . . . . . . . . . 1825, 1826, 1827, 1829, 1830
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C503
Abstract: C504 C504-2R C504-L
Text: Microcomputer Components C504 8-Bit CMOS Microcontroller User’s Manual 05.96 C504 Revision History: Current Version: 05.96 Previous Version: Page Page in previous (in new Version Version) Subjects (major changes since last revision) Edition 05.96 This edition was realized using the software system FrameMaker.
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CT1F
Abstract: CT2R Siemens Digital Book EC504 PMQFP-44
Text: C504 ht User’s Manual 06.96 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller C504 Revision History: Current Version: 05.96 Previous Version: Page Page in previous (in new Version Version) Subjects (major changes since last revision)
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Untitled
Abstract: No abstract text available
Text: C511/C511A C513/C513A C513A-H ht User's Manual 06.96 tp :/ Se /ww m w ic .s on ie du me ct ns or .d / e/ 8-Bit CMOS Microcontroller User’s Manual C511/C511A/C513/C513A/C513A-H Revision History : Current Version : 06.96 Previous Releases : 02.96, 05.95 Page
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C511/C511A
C513/C513A
C513A-H
C511/C511A/C513/C513A/C513A-H
P-LCC-44-2
P-MQFP-44
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CHQ 1838
Abstract: CK 77- 94V-0 cam pinout tda 12011 nec mys 501 MYS 99 726 TDA 7786 crouzet 88 810.1 MYS 99 832 Dry Reed Relay DG Rohs alps 3889
Text: Electromechanical Switches Basic / Snap Switches Cherry.1583, 1584, 1585, 1586, 1587 Mountain
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M0284-SS
M0285-SS
M0286-SS
M0287-SS
M0288-SS
M0289-SS
M0290-SS
M0291-SS
CHQ 1838
CK 77- 94V-0 cam pinout
tda 12011
nec mys 501
MYS 99 726
TDA 7786
crouzet 88 810.1
MYS 99 832
Dry Reed Relay DG Rohs
alps 3889
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Nippon capacitors
Abstract: No abstract text available
Text: HB526C264EN Series, HB526C464EN Series 1.048.576-word x 64-bit x 2-bank Synchronous Dynamic RAM Module 1.048.576-word x 64-bit x 4-bank Synchronous Dynamic RAM Module HITACHI ADE-203-629B Z Rev. 2.0 Mar. 17, 1997 Description The HB526C264EN, HB526C464EN belong to 8-byte DIMM (Dual In-line Memory Module) family, and
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HB526C264EN
HB526C464EN
576-word
64-bit
ADE-203-629B
HB526C264EN,
Nippon capacitors
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Untitled
Abstract: No abstract text available
Text: SIEMENS 8-Bit CMOS Microcontroller Edition 1997-10-01 This edition was realized using the software system FrameMaker . Published by Siemens AG, Bereich HalbJeiter, MarketingKommunikation, BalanstraBe 73, 81541 München Siemens AG 1997. All Rights Reserved.
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Burr Brown 3510am
Abstract: ner eN8 capacitor 3421J A5 GNC mosfet OPA103 OPA104 TF 6221 HEN LED display LOG100 3510CM Burr Brown OPA Application Reference
Text: BURR-BROWN Internatlenal Airport Industrial Park - P.0. Box 11400 - Tucson. Arizona B5734 Tel [602 746-1111 - TW X: 910-952-1111 - Cable: BBRCORP - Telex: 66-6491 PR O D U C T DATA BOOK The information in this publication has been carefully checked and is believed to be reliable; however, no responsibility is assumed for
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B5734
305/395-61C8
Burr Brown 3510am
ner eN8 capacitor
3421J
A5 GNC mosfet
OPA103
OPA104
TF 6221 HEN LED display
LOG100
3510CM
Burr Brown OPA Application Reference
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IRFD1Z3 equivalent
Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Text: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with out further notice to any products herein to improve reliability, function or design. Motorola does not
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VP1204N
TP8P08
5001D
VP1206N
1208N
5002D
1209N
VP1209N
IRFD1Z3 equivalent
8N60 equivalent
TP8N20
TP8N10
siemens semiconductor manual
What is comparable with IRF 3205
2N6823
irf8408
MTM5N90 designers datasheet
smps cook circuit
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM62981 Advance Information 64K x 4 Bit Fast Synchronous ParityRam The MCM62981 is a 262,144 bit synchronous static random access memory organized as 65,536 words of 4 bits, fabricated using Motorola's high-performance
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MCM62981
MCM62981
I3MCOE0GES082
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