diode 62z
Abstract: Hitachi DSA002786 diode+62z 62z zener
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581 Z Rev 0 Features • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
Original
|
PDF
|
ADE-208-581
diode 62z
Hitachi DSA002786
diode+62z
62z zener
|
diode 62z
Abstract: ADE-208-581 62z zener
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581 Z Rev 0 Oct. 1997 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
Original
|
PDF
|
ADE-208-581
diode 62z
62z zener
|
diode 62z
Abstract: Hitachi DSA002788
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-499
SC-59A
diode 62z
Hitachi DSA002788
|
diode 62z
Abstract: Hitachi DSA00217
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Nov. 1997 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-593
diode 62z
Hitachi DSA00217
|
ADE-208-581
Abstract: diode 62z DSA003642
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581A Z Rev.1 Nov. 2001 Features • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
Original
|
PDF
|
ADE-208-581A
D-85622
D-85619
ADE-208-581
diode 62z
DSA003642
|
diode 62z
Abstract: SC-59A Hitachi DSA0021 Hitachi DSA00217
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Feb. 1997 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-499
diode 62z
SC-59A
Hitachi DSA0021
Hitachi DSA00217
|
diode 62z
Abstract: No abstract text available
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-499
150pF,
diode 62z
|
diode 62z
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • MPAK-5 package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-593
diode 62z
|
PTSP0002ZA-A
Abstract: hzu6.2z
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb REJ03G1218-0200 Previous: ADE-208-581A Rev.2.00 Jun 16, 2005 Features • Low capacitance (C = 8.5 pF max) and can protect signal line from ESD. • Ultra small Resin Package (URP) is suitable for surface mount design.
|
Original
|
PDF
|
REJ03G1218-0200
ADE-208-581A)
PTSP0002ZA-A
Unit2607
PTSP0002ZA-A
hzu6.2z
|
diode 62z
Abstract: HZU6.2Z ADE-208-581
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-581 Z Rev 0 Features • Low capacitance (C = 8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
Original
|
PDF
|
ADE-208-581
diode 62z
HZU6.2Z
|
Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593 Z Rev 0 Features • • • HZM6.2ZFA has four devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-593
|
w410
Abstract: 62z zener
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-499 Z Rev 0 Features • • • HZM6.2ZWA has two devices, and can absorb external + and -surge. Low capacitance (C=8.5pF max) and can protect ESD of signal line. MPAK Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-499
w410
62z zener
|
TZD6.8WT
Abstract: smd marking 2D "Zener Diodes" 1076 SMD CODE BZX584C12 cross reference zener diodes zener 2D TZD12YWT TZD5.6WT BZX584C20 DIODES
Text: SMD Zener Diodes Two Terminals - 150mW 150mW Cross Reference Part No. TZD2.0WT TZD2.0YWT TZD2.2WT TZD2.2YWT TZD2.4WT TZD2.4YWT TZD2.7WT TZD2.7YWT TZD3.0WT TZD3.0YWT TZD3.3WT TZD3.3YWT TZD3.6WT TZD3.6YWT TZD3.9WT TZD3.9YWT TZD4.3WT TZD4.3YWT TZD4.7WT TZD4.7YWT
|
Original
|
PDF
|
150mW
TZD10WT
TZD10YWT
TZD11WT
TZD11YWT
TZD12WT
TZD12YWT
TZD13WT
TZD13YWT
TZD6.8WT
smd marking 2D
"Zener Diodes"
1076 SMD CODE
BZX584C12
cross reference zener diodes
zener 2D
TZD12YWT
TZD5.6WT
BZX584C20 DIODES
|
Untitled
Abstract: No abstract text available
Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
|
Original
|
PDF
|
D-85622
D-85619
|
|
|
ADE-208-593A
Abstract: diode 62z DSA003643
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb ADE-208-593A Z Rev.1 Nov. 2001 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C = 8.5 pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
Original
|
PDF
|
ADE-208-593A
D-85622
D-85619
ADE-208-593A
diode 62z
DSA003643
|
Untitled
Abstract: No abstract text available
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-581 Z Rev 0 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
OCR Scan
|
PDF
|
ADE-208-581
|
diode 62z
Abstract: ADE-208-581
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-581 Z Rev 0 Features • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
OCR Scan
|
PDF
|
ADE-208-581
diode 62z
|
diode 62z
Abstract: ADE-208-58KZ
Text: HZU6.2Z Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-58KZ Rev 0 Features • Low capacitance C=8.5pF max) and can protect ESD of signal line. • Ultra small Resin Package (URP) is suitable for surface mount design. Ordering Information
|
OCR Scan
|
PDF
|
ADE-208-58KZ)
diode 62z
ADE-208-58KZ
|
diode 62z
Abstract: surge absorb HZM6.2ZWA
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -Surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
PDF
|
ADE-208-499
150pF,
diode 62z
surge absorb
HZM6.2ZWA
|
Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
PDF
|
ADE-208-593
150pF,
|
Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -Surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
PDF
|
ADE-208-593
150pF,
|
Untitled
Abstract: No abstract text available
Text: HZM6.2ZFA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-593 Z Rev 0 Features • HZM6.2ZFA has four devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK-5 Package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
PDF
|
ADE-208-593
|
Untitled
Abstract: No abstract text available
Text: HZM6.2ZWA Silicon Epitaxial Planar Zener Diode for Surge Absorb HITACHI ADE-208-499 Z Rev 0 Features • HZM6.2ZWA has two devices, and can absorb external + and -surge. • Low capacitance (C=8.5pF max) and can protect ESD of signal line. • MPAK Package is suitable for high density surface mounting and high speed assembly.
|
OCR Scan
|
PDF
|
ADE-208-499
|
17 - 33z
Abstract: No abstract text available
Text: SILICON DIODES ZENER 0 .5 W m T Y P E DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ DZ 2V7 3 3V3 3VB 3V9 4V3 4V7 5V1 5V6 6V2 6V8 7V5 8V2 9VI 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 1 . CW IN IN IN
|
OCR Scan
|
PDF
|
DO-35
F-126
17 - 33z
|
