632 TRANSISTOR MOTOROLA Search Results

632 TRANSISTOR MOTOROLA Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

632 TRANSISTOR MOTOROLA Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
CA2820 TRW Abstract: ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022 Text: Order this document by AN1022/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1022 MECHANICAL AND THERMAL CONSIDERATIONS IN USING RF LINEAR HYBRID AMPLIFIERS Prepared by: Don Feeney Motorola RF Devices ABSTRACT Motorola’s thin film hybrid amplifiers are medium power	Original	AN1022/D AN1022 CA2820 TRW ferroxcube 4C4 MOTOROLA hybrid amplifiers UBJ-20 connector bnc CA2820 MOTOROLA hybrid amplifiers* reliability 714g 714G-01 trw RF POWER TRANSISTOR AN1022	PDF
MDC4010CT1 Abstract: MPX5100DP MPX5100 dt K 3264 transistor MPX5100 LM311DR1 pressure sensor Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1518 Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Prepared by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Motorola Phoenix, AZ INTRODUCTION For remote sensing and noisy environment applications, a	Original	AN1518 MDC4010CT1 MPX5100DP MPX5100 dt K 3264 transistor MPX5100 LM311DR1 pressure sensor	PDF
TRANSISTOR MMBT3904LT1 Abstract: MPX5100 schematic sensor switch MPX5100 dt pressure sensor Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1518 Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Prepared by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Motorola Phoenix, AZ INTRODUCTION For remote sensing and noisy environment applications, a	Original	AN1518 TRANSISTOR MMBT3904LT1 MPX5100 schematic sensor switch MPX5100 dt pressure sensor	PDF
PWM generator by using microcontroller Abstract: MPX5100DP mpx51* pressure sensor steps for capacitor sensor design MDC4010CT1 8bit pwm schematic create pulse MPX5100 Text: MOTOROLA Order this document by AN1518/D SEMICONDUCTOR APPLICATION NOTE AN1518 Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Prepared by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Motorola Phoenix, AZ INTRODUCTION	Original	AN1518/D AN1518 PWM generator by using microcontroller MPX5100DP mpx51* pressure sensor steps for capacitor sensor design MDC4010CT1 8bit pwm schematic create pulse MPX5100	PDF
LM311 its uses Abstract: mpx51* pressure sensor AN1518 LM311 LM311D MC68HC05P9 MC68HC705P9 MMBT3904LT1 MPX5000 MPX5100 Text: MOTOROLA Order this document by AN1518/D SEMICONDUCTOR APPLICATION NOTE AN1518 Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Prepared by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Motorola Phoenix, AZ INTRODUCTION	Original	AN1518/D AN1518 AN1518/D* LM311 its uses mpx51* pressure sensor AN1518 LM311 LM311D MC68HC05P9 MC68HC705P9 MMBT3904LT1 MPX5000 MPX5100	PDF
pressure transducer 30 psi micro usa Abstract: MICRO USA Pressure Sensor MPX5100DP AN1518 LM311 LM311D MC68HC05P9 MC68HC705P9 MMBT3904LT1 MPX5000 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN1518/D SEMICONDUCTOR APPLICATION NOTE AN1518 Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Prepared by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Motorola Phoenix, AZ	Original	AN1518/D AN1518 pressure transducer 30 psi micro usa MICRO USA Pressure Sensor MPX5100DP AN1518 LM311 LM311D MC68HC05P9 MC68HC705P9 MMBT3904LT1 MPX5000	PDF
tme 126 Abstract: MGW12N120 IC9012 Bipolar WPC Text: MOTOROLA SEMICONDUCTOR = TECHNICAL DATA Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate MGW12N120 This Insulated Gate Bipolar Transistor IGBT uses an advanced termination scheme to provide an enhanced and reliable high voltage-blocking capability.	Original	MGW12N120 O-247 10USminimum tme 126 MGW12N120 IC9012 Bipolar WPC	PDF
MJE4353 equivalent Abstract: equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJE4342 High-Voltage Ċ High Power Transistors MJE4343 PNP . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector–Emitter Sustaining Voltage —	Original	MJE4342 MJE4352 MJE4343 MJE4353 TIP73B TIP74 MJE4353 equivalent equivalent transistor K 3634 to220 amps 1200 v BU108 SDT9207 "cross reference" BU100 D45H11 cross reference cross reference bd830 2SD1815 "cross reference" 2sd1815 cross reference	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	MJF6107 2N6107 E69369, TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B 2SC495 NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar	PDF
TRANSISTOR BC 384 Abstract: BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF47 High Voltage Power Transistor Isolated Package Applications NPN SILICON POWER TRANSISTOR 1 AMPERE 250 VOLTS 28 WATTS Designed for line operated audio output amplifiers, switching power supply drivers and other switching applications, where the mounting surface of the device is required	Original	TIP47 E69369, MJF47 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TRANSISTOR BC 384 BU108 bd139 equivalent transistor 2N3055 equivalent RCA1C03 transistor Bc 574 BU326 BU100	PDF
2sc1943 circuit diagram Abstract: TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Advance Information NPN Silicon Power Darlington High Voltage Autoprotected The BU323Z is a planar, monolithic, high–voltage power Darlington with a built–in active zener clamping circuit. This device is specifically designed for unclamped,	Original	BU323Z TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 2sc1943 circuit diagram TIP42C DIAGRAM pin diagram mje13003 TRANSISTOR tip41c schematic diagram BD139 transistor circuit diagram TIP31 NPN Transistor diagram 2N3055 4D 2N3055 TO-218 Package BU108 tip122 tip127 audio amp schematic	PDF
c 3421 transistor Abstract: BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Horizontal Deflection Transistor . . . designed for use in televisions. • • • • Collector–Emitter Voltages VCES 1500 Volts Fast Switching — 400 ns Typical Fall Time Low Thermal Resistance 1_C/W Increased Reliability	Original	BU208A TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 c 3421 transistor BU108 transistor equivalent of BU406 equivalent transistor 2n3055 bu126 motorola 2SD165 bc 574 transistor D 1163 A BU208A 2N4906 MOTOROLA	PDF
sec tip41c Abstract: MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJL3281A* PNP MJL1302A*  Data Sheet Designer's Complementary NPN-PNP Silicon Power Bipolar Transistor *Motorola Preferred Device 15 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 200 VOLTS 200 WATTS • The MJL3281A and MJL1302A are PowerBase power transistors for high power	Original	MJL3281A MJL1302A MJL3281A* MJL1302A* TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A sec tip41c MJE493 2SC1419 2sc3281 2n3055 audio output circuit BDW93 MJ1000 BDW83 buv98a cross reference 2SC1943	PDF
BU108 Abstract: transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUV21 SWITCHMODE Series NPN Silicon Power Transistor 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS 250 WATTS . . . designed for high speed, high current, high power applications. • High DC current gain: hFE min. = 20 at IC = 12 A	Original	BUV21 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C 2N6488 BU108 transistor Bc 574 2n6107 MOTOROLA 2SC1943 MJ3055 to220 2SC1419 BU326 BU100 MJ*15033 2N6277	PDF

mje15033 replacement Abstract: BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN MJD6036 PNP MJD6039 Complementary Darlington Power Transistors DPAK For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, convertors, and power amplifiers.	Original	2N6034 2N6039 MJD6036 MJD6039 POW32 TIP73B TIP74 TIP74A TIP74B TIP75 mje15033 replacement BU108 2SC25 Replacements for BDW84 724 motorola NPN Transistor with heat pad BDX54 BD-375 BU326 BU100 2SC144	PDF
bdx54c equivalent Abstract: BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Plastic Medium-Power Complementary Silicon Transistors NPN BDX53B BDX53C PNP . . . designed for general–purpose amplifier and low–speed switching applications. BDX54B • High DC Current Gain — hFE = 2500 Typ @ IC = 4.0 Adc	Original	BDX53B, BDX53C, 220AB BDX53B BDX53C BDX54B BDX54C TIP73B TIP74 TIP74A bdx54c equivalent BOX 53C darlington power transistor tip122 D-PAK package All similar transistor 2sa715 BDX53C MOTOROLA BU108 transistor tip31 AMPLIFIER 2SD718 2sb688 schematic BDX54 2N386	PDF
MJH11021 equivalent Abstract: BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJH10012 See MJ10012 Complementary Darlington Silicon Power Transistors PNP MJH11017* . . . designed for use as general purpose amplifiers, low frequency switching and motor control applications. MJH11019* • High DC Current Gain @ 10 Adc — hFE = 400 Min (All Types)	Original	MJH10012 MJ10012) MJH11018, MJH11020, MJH11022, MJH11017* MJH11019* MJH11021* MJH11018* MJH11020* MJH11021 equivalent BUV44 FT317 SDT9202 2SC1903 BD262 DARLINGTON BD133 mje15033 replacement IR641 2SC2159	PDF
TIP42C as regulator Abstract: BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE1123 Bipolar Power PNP Low Dropout Regulator Transistor PNP LOW DROPOUT TRANSISTOR 4.0 AMPERES 40 VOLTS The MJE1123 is an applications specific device designed to provide low–dropout linear regulation for switching–regulator post regulators, battery powered systems	Original	MJE1123 TIP73B TIP74 TIP74A TIP74B TIP75 TIP75A TIP75B TIP75C TIP42C as regulator BU108 2SC103 NPN POWER DARLINGTON TRANSISTORS high voltage high ICM TO-247 NSP2100 2SD68 BDX54 2SC1943 MJE2482 2SD675	PDF
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp	PDF
TP251 transistor Abstract: tp251 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line UHF Power Transistor . . . designed p rim a rily fo r p o rta b le radio a pp licatio n s re q u irin g lo w b a tte ry voltag e . These parts have been desig n ed and characterized fo r o pe ra tio n in the fre q u en cy range	OCR Scan	TP251 TP251 transistor tp251	PDF
MHQ2222 Abstract: MHQ3467 MHQ2907 M 2530 motorola MHQ6001 MPQ2369 MPQ2907 MPQ3467 MPQ3725A MPQ6001 Text: Multiple Devices S M A L L - S IG N A L M U L T IP L E T R A N S IS T O R S A N D D A R L IN G T O N T R A N S IS T O R S The trend in electronic system design is toward the use of integrated circuits — to reduce component cost, assembly cost, and equipment cost. But ICs still aren't all things to all people, and for those circuit designs	OCR Scan	MPQ2369 MPQ2907 MPQ3467 mpq3725 MPQ3725A MPQ6001 mpq6002 MPQ68421 MHQ2222 MHQ3467 MHQ2907 M 2530 motorola MHQ6001	PDF
PWM generator by using microcontroller Abstract: how to control output voltage by using chip 4299A N1518 Text: MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN1518 Using a Pulse Width Modulated Output with Semiconductor Pressure Sensors Prepared by: Eric Jacobsen and Jeff Baum Sensor Design and Applications Group, Motorola Phoenix, AZ INTRODUCTION For remote sensing and noisy environment applications, a	OCR Scan	AN1518 PWM generator by using microcontroller how to control output voltage by using chip 4299A N1518	PDF
MCM6830 Abstract: MPQ6842 MCM6832L 200 watts audio amp power transistors circuit diagram power transistor audio amplifier 500 watts circuit diagram MCM6830A MHQ2907 MHQ3467 MHQ6002 Common collector 8 bit darlington Text: Multiple Devices S M A L L - S IG N A L M U L T I P L E T R A N S I S T O R S A N D D A R L IN G T O N T R A N S I S T O R S The trend in electronic system design is toward the use of integrated circuits — to reduce com ponent cost, assembly cost, and equipment cost. But ICs still aren't all things to all people, and fo r those circuit designs	OCR Scan	MPQ6842 MPQ6842 MCM6830 MCM6832L 200 watts audio amp power transistors circuit diagram power transistor audio amplifier 500 watts circuit diagram MCM6830A MHQ2907 MHQ3467 MHQ6002 Common collector 8 bit darlington	PDF
D217 OPTO Abstract: MOCD217 opto D217 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Dual Channel Sm all Outline O ptoisolators MOCD217 Transistor Output Low Input Current [CTR* 100% Min] The MOCD217 device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a	OCR Scan	MOCD217 RS481A MOCD217 TA-25 D217 OPTO opto D217	PDF

632 TRANSISTOR MOTOROLA Search Results

632 TRANSISTOR MOTOROLA Result Highlights (5)

632 TRANSISTOR MOTOROLA Datasheets Context Search

CA2820 TRW

MDC4010CT1

TRANSISTOR MMBT3904LT1

PWM generator by using microcontroller

LM311 its uses

pressure transducer 30 psi micro usa

tme 126

MJE4353 equivalent

2SC495

TRANSISTOR BC 384

2sc1943 circuit diagram

c 3421 transistor

sec tip41c

BU108

mje15033 replacement

bdx54c equivalent

MJH11021 equivalent

TIP42C as regulator

hep 154 silicon diode

TP251 transistor

MHQ2222

PWM generator by using microcontroller

MCM6830

D217 OPTO