Untitled
Abstract: No abstract text available
Text: Data Sheet HL63153AT preliminary AIGaInP Laser Diode 638nm/150mW Outline Features: • High optical output power: 150mW Shorter wavelength: 638nm Typ. Small package: 3.8mm Low operating current: 230mA Typ. Low operating voltage: 2.7V Typ.
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HL63153AT
638nm/150mW
150mW
638nm
230mA
HL63153AT
D00xxx-PB
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL6321G/22G AIGaInP Laser Diode 638nm/15mW Features: Outline • Optical output power: 15mW CW Visible light output: 638nm Typ. Low operating current: 100mA Max. Low operating voltage: 2.7V Max. TM mode oscillation Single transverse mode
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HL6321G/22G
638nm/15mW
638nm
100mA
HL6321G/22G
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL63153AT AIGaInP Laser Diode 638nm/150mW Outline Features: 0.8+/-0.1 0.25 +0 3.8 -0.025 0.9+/-0.2 3.0+/-0.3 2.5+/-0.1 • High optical output power: 150mW Shorter wavelength: 638nm Typ. Small package: 3.8mm Low operating current: 230mA Typ.
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HL63153AT
638nm/150mW
230mA
638nm
150mW
HL63153AT
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL6312G AIGaInP Laser Diode 638nm/5mW Features: Outline • Visible light output:638nm Typ. Optical output power: 5mW CW Low operating voltage: 2.7V Max. Built-in photodiode for monitoring laser output TM mode oscillation Single transverse mode
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HL6312G
638nm/5mW
638nm
HL6312G
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OCLARO
Abstract: No abstract text available
Text: Data Sheet HL6354MG/55MG AIGaInP Laser Diode Outline 638nm/7mW Features: • Optical output powr: 5mW CW Visible light output:638nm Typ. Low operating current: 27mA Typ. Low operating voltage: 2.4V Max. Operating temperature: 50℃ TM mode oscillation
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HL6354MG/55MG
638nm
638nm/7mW
HL6354MG/55MG
OCLARO
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Oclaro
Abstract: violet laser diode Oclaro LASER
Text: Data Sheet HL6319G/20G AIGaInP Laser Diode Outline 638nm/10mW Features: • Optical output powr: 10mW CW Visible light output:638nm Typ. Low operating current: 95mA Max. Low operating voltage: 2.7V Max. Single transverse mode TM mode oscillation
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HL6319G/20G
638nm
638nm/10mW
HL6319G/20G
Oclaro
violet laser diode
Oclaro LASER
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HL6321
Abstract: No abstract text available
Text: Data Sheet HL6321G/22G AIGaInP Laser Diode Outline 638nm/15mW Features: • Optical output powr: 15mW CW Visible light output: 638nm Typ. Low operating current: 100mA Max. Low operating voltage: 2.7V Max. TM mode oscillation Single transverse mode
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HL6321G/22G
638nm
100mA
638nm/15mW
HL6321G/22G
HL6321
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL63133DG AIGaInP Laser Diode 638nm/170mW Features: Outline • Visible light output: 638nm Typ. Optical output power: 170mW CW Single transverse mode Low operating current: 250mA Typ. Low operating voltage: 2.8V Typ. Small package: 5.6mm
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HL63133DG
638nm/170mW
638nm
170mW
250mA
HL63133DG
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL63193MG AIGaInP Laser Diode 638nm/700mW Outline Features: • Shorter wavelength: 638nm Typ. · High optical output power: 700mW · Small package: f 5.6mm · Multi transverse mode · TM mode oscillation Applications: unit:mm Internal Circuit
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HL63193MG
638nm/700mW
638nm
700mW
HL63193MG
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL63603TG AIGaInP Laser Diode 638nm/120mW Features: Outline • Visible light output: 638nm Typ. Optical output power: 120mW CW Single transverse mode Low operating current: 165mA Typ. Low operating voltage: 2.7V Typ. Small package: 3.8mm
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HL63603TG
638nm/120mW
638nm
120mW
165mA
HL63603TG
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Oclaro LASER
Abstract: No abstract text available
Text: Data Sheet HL63101MG/102MG AIGaInP Laser Diode 638nm/7mW Features: Outline • Optical output powr: 5mW CW Visible light output:637nm Typ. Low operating current: 20mA Typ. Low operating voltage: 2.2V Typ. Operating temperature: +60℃
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HL63101MG/102MG
638nm/7mW
637nm
HL63101MG/102MG
Oclaro LASER
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL6319G/20G AIGaInP Laser Diode 638nm/10mW Features: Outline • Optical output power: 10mW CW Visible light output:638nm Typ. Low operating current: 95mA Max. Low operating voltage: 2.7V Max. Single transverse mode TM mode oscillation
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HL6319G/20G
638nm/10mW
638nm
HL6319G/20G
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Untitled
Abstract: No abstract text available
Text: Data Sheet HL6354MG/55MG AIGaInP Laser Diode 638nm/7mW Features: Outline • Optical output power: 5mW CW Visible light output:638nm Typ. Low operating current: 27mA Typ. Low operating voltage: 2.4V Max. Operating temperature: 50℃ TM mode oscillation
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HL6354MG/55MG
638nm/7mW
638nm
HL6354MG/55MG
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P1073
Abstract: ML520G54
Text: MITSUBISHI LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML520G54 DESCRIPTION FEATURES • High Output Power: 110mW CW Mitsubishi ML5xx54 is a high-power, high-efficient semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)
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ML5xx54
ML520G54
110mW
638nm
110mW.
TLDE-P1073
P1073
ML520G54
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LTD-4608CB
Abstract: LTD-2601JG LTS-4802KR ltd5721 LTC-2621CB LTP-4323JG LTS-5001AJR 6740k LTP-7188KD LTS-2801AJR
Text: 071 L ED Display L ite-On LED displays provide high brightness, contrast, and wide viewing angles for performance in flat panel display solutions. 120°C high operation temperature displays also available for special requirement purpose. For colors include blue, green, yellow, amber, orange and red utilizing InGaN, AlInGaP, GaAsP and
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MIL-STD-202
MIL-STD-750
MIL-STD-883
30min
LTD-4608CB
LTD-2601JG
LTS-4802KR
ltd5721
LTC-2621CB
LTP-4323JG
LTS-5001AJR
6740k
LTP-7188KD
LTS-2801AJR
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650nm laser diode 200mw
Abstract: DL-6147-040 laser diode DVD 100mw DL-3148-037 DL-3146-151 DL-3147-060 DL-3148-025 DL-7147-201 DL-3148-023 CIRCUIT iso 14001 sanyo
Text: SANYO Laser Diodes support advanced information society. SANYO has a wide range of laser diodes from 405nm to 830nm in the line-up. SANYO laser diodes are characterized by high power models for DVD±R/RW/-RAM and CD-R. There are also 635nm models for industrial applications such as laser display, bar-code scanners,
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405nm
830nm
635nm
808nm
650nm laser diode 200mw
DL-6147-040
laser diode DVD 100mw
DL-3148-037
DL-3146-151
DL-3147-060
DL-3148-025
DL-7147-201
DL-3148-023 CIRCUIT
iso 14001 sanyo
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ML520G55
Abstract: ML5xx55 Semiconductor Laser International Corporation
Text: LASER DIODES ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 150mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)
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ML5xx55
ML520G55
150mW
95mW/mA
638nm
150mW.
TLDE-P1294
ML520G55
Semiconductor Laser International Corporation
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ML520G55
Abstract: ML5xx55
Text: MITSUBISHI LASER DIODES E V I T A T N TE TYPE NAME ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 180mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)
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ML5xx55
ML520G55
180mW
95mW/mA
638nm
180mW.
TLDE-P1072
ML520G55
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ML501P73
Abstract: Semiconductor Laser International Corporation
Text: MITSUBISHI LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML501P73
ML501P73
638nm
Duty33%
frequency50Hz
TLDE-P1123
Semiconductor Laser International Corporation
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2 Wavelength Laser Diode
Abstract: Diode 80V 0.1A laser diode 405nm Analog Technologies 405nm laser diode "Key Switch" ATMF102 Laser beam remote control switch 638nm
Text: Analog Technologies, Inc. ATMF102 Mode-Hop-Free Laser Module Features Applications • • • • • • • • • • Mode-hop-free and single mode High wavelength stability Very low noise Small size and low cost CDHR compliant built-in shutter, key switch and emission indicator.
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ATMF102
ATMF102
2 Wavelength Laser Diode
Diode 80V 0.1A
laser diode 405nm
Analog Technologies
405nm laser diode
"Key Switch"
Laser beam
remote control switch
638nm
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Untitled
Abstract: No abstract text available
Text: Wide Optical Spectrum Laser Power Monitor IC ISL58327 Features The ISL58327 photo sensor IC has a wide optical spectral sensitivity from 400nm to 1000nm. It is good for multiple light source applications, such as laser based projectors. The ISL58327 has two banks of three sets of gain registers. For a
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ISL58327
ISL58327
400nm
1000nm.
5M-1994
FN6577
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Untitled
Abstract: No abstract text available
Text: LASER DIODES ML5xx73 LD SERIES FOR DISPLAY SYSTEM TYPE NAME ML501P73 DESCRIPTION FEATURES • High Output Power: 1.0W Pulse Mitsubishi ML501P73 is a high-power, highly efficient semiconductor laser diode which provides emission wavelength of 638 nm and standard light
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ML5xx73
ML501P73
ML501P73
638nm
TLDE-P1245
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DL-4146-101
Abstract: laser diode 405nm 650nm laser diode 200mw DL-4146-101S DL-6147-040 Laser diode 532nm 50mW DL-8141-002 405nm 5mW laser diode DL-3147-260 DL-4146-301
Text: LASER DIODE 2007-11 SANYO Electric Co.,Ltd Electronic Device Company Sales&Marketing Division Laser Sales Section 1-1-10 Ueno,Taito-ku,Tokyo,110-8534 JAPAN Tel:+81-3-3837-6272 Fax:+81-3-3837-6390 Tottori SANYO Electric Co.,Ltd Electronic Device Company Photonics Business Division
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ml520
Abstract: No abstract text available
Text: LASER DIODES ML5xx54 LD SERIES FOR DISPLAY SYSTEM ML520G54 TYPE NAME DESCRIPTION FEATURES Mitsubishi ML5xx54 is a high-power, high-efficient • High Output Power: 110mW CW semiconductor laser diode which provides emission • High Efficiency: 1.1mW/mA (typ.)
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ML5xx54
ML520G54
110mW
638nm
110mW.
TLDE-P1248
ml520
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