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    648 DIODE Search Results

    648 DIODE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation
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    648 DIODE Price and Stock

    Hirschmann Electronics GmbH & Co Kg GDM 3011 J 6-48V RHP w/ DIODE

    Sensor Cables / Actuator Cables
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics GDM 3011 J 6-48V RHP w/ DIODE 40
    • 1 $21.09
    • 10 $17.58
    • 100 $14.06
    • 1000 $13.76
    • 10000 $13.76
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    648 DIODE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    cable amplifier OPA

    Abstract: OPA648 datasheet DEM-OPA64X OPA648 OPA648H OPA648P OPA648U PDS-1253A Frequency Generator 0.1Hz 10MHz equivalent ic to PAL 008 MOSFET
    Text: OPA648 OPA 648 OPA OPA 648 648 ULTRA-WIDEBAND CURRENT FEEDBACK OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH: 1GHZ ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.02%/0.02° The OPA648 is an ultra high bandwidth current feedback operational amplifier. The current feedback architecture also allows for a very high slew rate, which


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    PDF OPA648 OPA648 DEM-OPA64X LI-445) 10LOG cable amplifier OPA OPA648 datasheet DEM-OPA64X OPA648H OPA648P OPA648U PDS-1253A Frequency Generator 0.1Hz 10MHz equivalent ic to PAL 008 MOSFET

    DEM-OPA64X

    Abstract: OPA648 OPA648H OPA648P OPA648U
    Text: OPA648 OPA 648 OPA OPA 648 648 ULTRA-WIDEBAND CURRENT FEEDBACK OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH: 1GHZ ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.02%/0.02° The OPA648 is an ultra high bandwidth current feedback operational amplifier. The current feedback architecture also allows for a very high slew rate, which


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    PDF OPA648 OPA648 DEM-OPA64X LI-445) 10LOG DEM-OPA64X OPA648H OPA648P OPA648U

    OPA648

    Abstract: DEM-OPA64X OPA648H OPA648P OPA648U equivalent ic to PAL 008 MOSFET
    Text: OPA648 OPA 648 OPA OPA 648 648 ULTRA-WIDEBAND CURRENT FEEDBACK OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH: 1GHZ ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.02%/0.02° The OPA648 is an ultra high bandwidth current feedback operational amplifier. The current feedback architecture also allows for a very high slew rate, which


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    PDF OPA648 OPA648 DEM-OPA64X OPA648H OPA648P OPA648U equivalent ic to PAL 008 MOSFET

    Untitled

    Abstract: No abstract text available
    Text: OPA648 OPA 648 OPA OPA 648 648 ULTRA-WIDEBAND CURRENT FEEDBACK OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● WIDE BANDWIDTH: 1GHZ ● LOW DIFFERENTIAL GAIN/PHASE ERRORS: 0.02%/0.02° The OPA648 is an ultra high bandwidth current feedback operational amplifier. The current feedback architecture also allows for a very high slew rate, which


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    PDF OPA648 OPA648

    RU 110012

    Abstract: AQW216HAX AQY216 AQW612 211EH DIP4 aqw612s aqv258h schematic diagram induction furnace AQY232 AQY210
    Text: Global Network North America Europe Asia Pacific China Japan Panasonic Electric Works Please contact our Global Sales Companies in: Europe  Headquarters Panasonic Electric Works Europe AG Rudolf-Diesel-Ring 2, 83607 Holzkirchen, Tel. +49 0 8024 648-0, Fax +49 (0) 8024 648-111, www.panasonic-electric-works.com


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    PDF RM1205-9, RU 110012 AQW216HAX AQY216 AQW612 211EH DIP4 aqw612s aqv258h schematic diagram induction furnace AQY232 AQY210

    induction cooker schematic diagram

    Abstract: AQG22212 210HL induction cooker block diagrams 211EH DIP4 aqv234 044 schematic diagram induction furnace 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM AQV251G 500w amply
    Text: Global Network North America Europe Asia Pacific China Japan Panasonic Electric Works Please contact our Global Sales Companies in: Europe  Headquarters Panasonic Electric Works Europe AG Rudolf-Diesel-Ring 2, 83607 Holzkirchen, Tel. +49 0 8024 648-0, Fax +49 (0) 8024 648-111, www.panasonic-electric-works.com


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    PDF RM1205-9, induction cooker schematic diagram AQG22212 210HL induction cooker block diagrams 211EH DIP4 aqv234 044 schematic diagram induction furnace 12v 400W AUDIO AMPLIFIER CIRCUIT DIAGRAM AQV251G 500w amply

    PI74FCT646T

    Abstract: PI74FCT648T
    Text: PI74FCT646/648/651/652T 25Ω Ω Series P174FCT2646T/2652T OCTAL REGISTERED TRANSCEIVERS PI74FCT646T/648T/651T/652T


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    PDF PI74FCT646/648/651/652T P174FCT2646T/2652T PI74FCT646T/648T/651T/652T PI74FCT2646T/2652T PI74FCT646T/648T/651T/652T/2646T/2652T PS2022A PI74FCT646T PI74FCT648T

    Light Dimmer 800 watt with Schematic

    Abstract: zero crossing dimmer zigbee Voltech dimmer 2250u busch dimmer 2250u 3 volt dimmer circuit light dimmer working circuit using triac TMK316B7106KL-TD 220 volt dimmer circuit 1210 LED
    Text: User's Guide SLUU523 – July 2011 Using the TPS92070EVM-648 Integrated Dimming LED Lighting Driver Converter for 230 VAC Input The TPS92070EVM-648 evaluation module EVM is a low power isolated flyback converter that provides 5 on-board LEDs with 370 mA of drive current from a nominal 230 VAC input. This EVM is designed to


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    PDF SLUU523 TPS92070EVM-648 TPS92070 Light Dimmer 800 watt with Schematic zero crossing dimmer zigbee Voltech dimmer 2250u busch dimmer 2250u 3 volt dimmer circuit light dimmer working circuit using triac TMK316B7106KL-TD 220 volt dimmer circuit 1210 LED

    74420

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 648 S 06.10 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage


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    81-MIT

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 648 S 06.10 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage


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    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 648 S 06.10 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage


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    Untitled

    Abstract: No abstract text available
    Text: Technische Information / Technical Information Schnelle Gleichrichterdiode Fast Diode D 648 S 06.10 S Elektrische Eigenschften / Electrical properties Höchstzulässige Werte / Maximum rated values Periodische Spitzensperrspannung repetitive peak forward reverse voltage


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    KAI-0330

    Abstract: KAI-0330D PS-0484 PS-1197
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 5.0 MTD/PS-0484 July 29, 2010 KODAK KAI-0330 IMAGE SENSOR 648 H X 484 (V) INTERLINE TRANSFER PROGRESSIVE SCAN CCD CONTENTS Summary Specification . 4


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    PDF MTD/PS-0484 KAI-0330 4H0774, 4H0775, 4H0780, 4H0781, 4H0782, 4H0783, 4H0784, 4H0785, KAI-0330D PS-0484 PS-1197

    KAI-0330

    Abstract: ccd 0330 4H0774 kodak progressive scan ccd image sensor
    Text: DEVICE PERFORMANCE SPECIFICATION Revision 3.0 MTD/PS-0484 May 25, 2007 KODAK KAI-0330 IMAGE SENSOR 648 H X 484 (V) INTERLINE TRANSFER PROGRESSIVE SCAN CCD CONTENTS Summary Specification . 4


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    PDF MTD/PS-0484 KAI-0330 MTD/PS-0484 ccd 0330 4H0774 kodak progressive scan ccd image sensor

    Untitled

    Abstract: No abstract text available
    Text: KAI-0330 IMAGE SENSOR 648 H X 484 (V) INTERLINE CCD IMAGE SENSOR JUNE 9, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 2.1 PS-0023 KAI-0330 Image Sensor TABLE OF CONTENTS Summary Specification . 5


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    PDF KAI-0330 PS-0023 PS-0023

    ccd image area sensor 120 frame rate

    Abstract: kai active area CCD FILTER angle incidence ccd IMAGE SENSOR global shutter
    Text: KAI-0330 IMAGE SENSOR 648 H X 484 (V) INTERLINE CCD IMAGE SENSOR JULY 13, 2012 DEVICE PERFORMANCE SPECIFICATION REVISION 1.0 PS-0023 KAI-0330 Image Sensor TABLE OF CONTENTS Summary Specification . 5


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    PDF KAI-0330 PS-0023 4H0774, 4H0775, 4H0780, 4H0781, 4H0782, 4H0783, 4H0784, ccd image area sensor 120 frame rate kai active area CCD FILTER angle incidence ccd IMAGE SENSOR global shutter

    CCD CP marking code

    Abstract: JESD22 KAI-0330 KAI-0330S KAI-0330SCM KAI-0330SM "full hd" mobile phone camera pinout vga ccd monochrome tcd storage gate ccd kai active area
    Text: IMAGE SENSOR SOLUTIONS DEVICE PERFORMANCE SPECIFICATION KODAK KAI-0330S Image Sensor 648 H x 484 (V) Interline Transfer Progressive Scan CCD June 2, 2003 Revision 2.0 KAI-0330S Rev 2.0 www.kodak.com/go/imagers 585-722-4385 [email protected] IMAGE SENSOR SOLUTIONS


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    PDF KAI-0330S KAI-0330S CCD CP marking code JESD22 KAI-0330 KAI-0330SCM KAI-0330SM "full hd" mobile phone camera pinout vga ccd monochrome tcd storage gate ccd kai active area

    MC14016 datasheet

    Abstract: Analog Demultiplexer HC4016 HC4066 HC4316 MC14016 MC14066 MC74HC4316 MC74HCXXXXN
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MC74HC4316 Quad Analog Switch/ Multiplexer/Demultiplexer with Separate Analog and Digital N SUFFIX PLASTIC PACKAGE CASE 648–08 16 Power Supplies 1 High–Performance Silicon–Gate CMOS The MC74HC4316 utilizes silicon–gate CMOS technology to achieve fast


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    PDF MC74HC4316 MC74HC4316 HC4316 MC14016 MC14066, HC4016 HC4066. MC74HC4316/D* MC74HC4316/D DL129 MC14016 datasheet Analog Demultiplexer HC4066 MC14066 MC74HCXXXXN

    mc1648

    Abstract: symbol of varactor diode and equivalent circuit 1200 ohm RESISTOR 5011-10 MC1648 internal schematic MV2116 MV1401 70 mhz varactor diode
    Text: M MOTOROLA MCI 648 VOLTAGE-CONTROLLED OSCILLATOR VOLTAGE-CONTROLLED OSCILLATOR The MCI 648 requires an external parallel tank circuit consisting of the inductor (L) and capacitor (C). FOR MAXIMUM PERFORMANCE QL S 100 AT FREQUENCY OF OPERATION. A varactor diode may be incorporated into the tank circuit to


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    PDF MC1648 symbol of varactor diode and equivalent circuit 1200 ohm RESISTOR 5011-10 MC1648 internal schematic MV2116 MV1401 70 mhz varactor diode

    74HCTLS

    Abstract: Zytrex
    Text: Zytrex B G W K nS F ebrua ry 1985 646 ZX74HCTLS 648 Octal 3-State Bus Transceivers with Registers OBJECTIVE SPECIFICATIONS Features Description • 8 bi-directional data paths The ’646 and '648 are bi-directional bus transceivers with D-type flip-flops and control circuitry to facilitate high


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    PDF ZX54HCTLS ZX74HCTLS 24-pin 54/74LS 74HCTLS: 54HCTLS: 74HCTLS Zytrex

    B0646

    Abstract: BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660
    Text: asc D • û23SbOS D G 0 4 3 CJ1 1 I I S I E G PNP Silicon Darlington Transistors SIEMENS AKTIENGESELLSCHAF>91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 650 are monolithic PNP silicon epibase power darlington


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    PDF fl23Sb05 DQ43CI1 T-33-31 OP-66) 644/BD BD648, BD644. BO646. BO648. BD660 B0646 BO650 80846 B0648 Bo648 bd648 D237 DIODE BD646 Q62702-D235 BD660

    bd 640

    Abstract: TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650
    Text: 25C D • û23SbOS DQ043CJ1 S I ISIEG . [ PNP Silicon Darlington Transistors SIEMENS A K T I EN GE SE LLS C HA F *91 T-33-31 BD 644 BD 646 0 - BD 648 BD 650 Epibase power darlington transistors 62.5W BD 644, BD 646, BD 648, and BD 6 5 0 are monolithic PNP silicon epibase power darlington


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    PDF 23SbOS DQ043C T-33-31 OP-66) U4J94 BD644, BD648, BD650 bd 640 TOP-66 646 af bd640 BO 648 bd648 diode 648 648 diode BD 650 bd650

    BD 650

    Abstract: b0644 BD648 bd646 BD 644 B0648 B0646 bd 648 bd650 darlington bd 645
    Text: BD 644 • BD 646 • BD 648 • BD 650 Silizium-PNP-Darlington-Leistungstransistoren Silicon PNP Darlington Power Transistors Anwendungen: NF-Endstufen Applications: AF-Output stages Besondere Merkmale: Features: • Hohe Sperrspannung • High reverse voltage


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    jedec MS-012-bA

    Abstract: jedec MS-012-AA 74ALS646 74ALS646-1 74ALS648 74ALS648-1 20na
    Text: Signetics 74ALS646, 74ALS646-1 74ALS648, 74ALS648-1 Tra nsce ive rs/ Reg iste rs ALS Products 'ALS646/646-1 Octal Transceiver/Register, Non-Inverting 3-state 'ALS648/648-1 Octal Transceiver/Register, Inverting (3-state) Preliminary Specification FEATURES


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    PDF 74ALS646, 74ALS646-1 74ALS648, 74ALS648-1 ALS646/646-1 ALS648/648-1 74ALS646/74ALS646-1 ALS648/74ALS648-1 5M-1982. eounterdock-22) jedec MS-012-bA jedec MS-012-AA 74ALS646 74ALS648 20na