Untitled
Abstract: No abstract text available
Text: MITSUBISHI LSIs MH6408AD-15 5 2 4 2 8 8 -B IT 6 5 536-W O RD BY 8-BIT DYNAMIC RAM D E S C R IP T IO N The MH6408AD is 65536 word x 8 bit dynamic RAM and consists of eight industry standard 64K x 1 dynamic RAMs in leadless chip carrier. The mounting of leadless chip carriers on a ceramic
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MH6408AD-15
MH6408AD
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1A43
Abstract: 4464 ram m4464 4464 64k 4464 texas
Text: ADVANCE INFORMATION TM4464LU8 65,536 BY 8 BIT DYNAMIC RAM MODULE OCTOBER 9 1 8 5 - • 6 5 .53 6 X 8 Organization REVISED NOVEMBER 1 9 8 5 U SINGLE-IN-LINE PACKAGE t o p v ie w i Single 5-V Supply (10% Tolerance 30-Pin Singie-in-Line Package (SIP) Utilizes Two 64K X 4 Dynamic RAMs in
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TM4464LU8
30-Pin
4464LU
1A43
4464 ram
m4464
4464 64k
4464 texas
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smj4164
Abstract: SMJ4256 20D17
Text: SMJ4256 262,144-BIT DYNAMIC RANDOM ACCESS MEMORY NOVEMBER 198B - • 262,144 x 1 Organization • Single 5-V Supply • JEDEC Standardized Pinout • Upward Pin Compatible with SMJ4164 64K Dynamic RAM • JD PACKAGE (TOP VIEW) A 8£ AOQ ACCESS ]V S S 15 ] C A S
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SMJ4256
144-BIT
SMJ4164
SMJ4256-12
SMJ4256-15
SMJ4256-20
smj4164
SMJ4256
20D17
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Untitled
Abstract: No abstract text available
Text: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS I>e| 374T7bH 0DQ30aH fi W ~ 70C 0 3 0 2 2 0T V i ' 2 3 * 7 FU JITSU • M B 8 5 1 0 3 A -1 2 , M B 8 5 1 0 3 A -1 5 MOS 65,536 x 8-Bit Dynamic RAM Module Daporlptlon The Fujitsu MB85103A Is a 64K x 8 dynamic RAM high density
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374T7bH
0DQ30aH
MB85103A
MB8264A
18-pad
22-pln
MSP-22S-CC02)
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MC68451
Abstract: MVME101 MVME215 MVME319 MVME110-1 MC68010 MC68881 MC6810 mvme202 MVME204
Text: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System
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16-bit
MVME101
MC68000
32Kbyte
MVME110-1
MC68010
socket10.
MVME121
MC68451
MVME101
MVME215
MVME319
MVME110-1
MC68881
MC6810
mvme202
MVME204
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MVME101
Abstract: MC68451 MVME110-1 cache ram 64k x 8 MVME205 MVME215 mvme202 1Mb static ram MVME050 MVME123
Text: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System
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16-bit
MVME101
MC68000
32Kbyte
MVME110-1
MC68010
socketME131
512Kb
MVME202
MVME101
MC68451
MVME110-1
cache ram 64k x 8
MVME205
MVME215
mvme202
1Mb static ram
MVME050
MVME123
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Untitled
Abstract: No abstract text available
Text: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also
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536-Bit
MB8264A-W
004pn
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MB8264A-15
Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
Text: P relim inary F U J IT S U M O S M e m o rie s M B 8 2 6 4 A -1 2 -W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM Intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also
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MB8264A-12-W,
MB8264A-15-W
536-Bit
MB8264A-W
MB8294A-12-W
MB82S4A-1B-W
MB8264A-15
MB8264A-12
MB8264A-12-W
MB8264A-15-W
MB8264A
MB82S4A-1S-W
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V53C864
Abstract: No abstract text available
Text: L f VITELIC V53C864 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM f 70/70L 80/80L 10/10L 12/12L M ax. RA S Access Tim e, tRAC HIGH PERFORMANCE V53C864 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Time, (tCAA) 35 ns
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V53C864
70/70L
80/80L
10/10L
12/12L
V53C864
V53C864L
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Untitled
Abstract: No abstract text available
Text: kf VITELIC V53C866 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT STA TIC COLUMN CMOS DYNAMIC RAM 70/70L HIGH PERFORMANCE V53C866 80/80L 10/10L 12/12L M ax. R A S Access Tim e, *RAC 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Tim e, (tCAA) 35 ns
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V53C866
80/80L
70/70L
V53C866
10/10L
12/12L
V53C866L
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Untitled
Abstract: No abstract text available
Text: Preliminary ^ » • M B 8 5 1 0 3 A -1 2, M B 8 5 1 0 3 A -1 5 MÛS 65,536 x 8-Bit Dynamic RAM Module D e s c rip tio n The Fujitsu MB85103A is a 64K x 8 dynam ic RAM high density mem ory m odule. It c o n sists o f e ig h t MB8264A DRAMs in 18-pad LCC packages m ounted on a 22-pin m u ltila yer ceram ic substrate.
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MB85103A
MB8264A
18-pad
22-pin
MDL-22S-CC02)
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Untitled
Abstract: No abstract text available
Text: Preliminary M O S • M M e m o r ie s B 8 2 6 4 A - 1 2 - W , M ^ F U JIT S U B 8 2 6 4 A - 1 5 - W N M O S 65,536-Bit Dynamic Random Access Mem ory W ith W ide Tem perature Range Description The MB8264A-W is a 64K x 1 dynam ic RAM intended for operation
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536-Bit
MB8264A-W
-12-W
B8264A
-15-W
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Untitled
Abstract: No abstract text available
Text: P re lim in a re F U JIT SU • M B 8 5 1 0 1 A -1 0 , M B 8 5 1 0 1 A -1 2 , M B 8 5 1 0 1 A -1 5 MOS 65,536 X 4-Bit Dynamic RAM Module D e s c rip tio n The Fu jitsu MB85101A is a 64K x 4 d ynam ic RAM high density m em ory m odule. It c o n sists of fo u r MB8264A ORAMs in 18-pad
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MB85101A
MB8264A
18-pad
22-pin
22-Lead
MDL-22S-CC01)
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AK41128
Abstract: AK42064
Text: HIGH DENSITY DYNAMIC RANDCM ACCESS MEMORY MODULES ACCUTEK DESCRIPTION The Accutek family of high density dynamic RAM modules are comprised of 64K x 1 or 256K x 1 dynamic RAMs packaged in LCCs or PLCCs along with chip capacitors, mounted to multi-layer ceramic
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150ns
AK41128
AK42064
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KMCJ532512
Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 — KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7
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KM41C1000C-6
KM41C1000CL-6
KM41C1000CSL-6
KM44C256C-6
KM44C256CL-6
KM44C256CSL-6
KM41C4000C-5
KM41C4000C-6
KM41C4000C-7
KM41C4000C-8
KMCJ532512
KM23C1000-20
KM28C64B
KMM594
KM718B90-12
zip 40pin
30-pin simm memory "16m x 8"
KM41C4000C-6
KM41C16000ALL
KM48V2104AL
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Untitled
Abstract: No abstract text available
Text: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511662
16bit
NN511662L
00Q153fl
NNS11662
NN511662XX
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mcm6665
Abstract: MC6809E A7 B14 MC68B09E mc6821 16k x 1 ram vdg 6847 details MCM-4116 sn74ls244 motorola
Text: M MOTOROLA SN74LS783/ MC6883 SN74LS785 SYNCHRONOUS ADDRESS MULTIPLEXER The SN74LS783/MC68B3 and SN74LS785 bring together the MC6809E (M PU), the MC6847 (Color Video Oisplay Generator) and dynamic RAM to form a highly effective, compact and cost effec tive computer and display system.
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SN74LS783/MC68B3
SN74LS785
MC6809E
MC6847
SN74LS783/MC6883
LS785
MCM68364)
MC6809E,
MC6800,
mcm6665
MC6809E
A7 B14
MC68B09E
mc6821
16k x 1 ram
vdg 6847 details
MCM-4116
sn74ls244 motorola
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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KM68512
Abstract: 12BKX8 km6865b
Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs
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010/J/T
KM68512
12BKX8
km6865b
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KM424C256Z
Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100
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KM41C256P
KM41C255J
KM41C258Z
KM41C257P
KM41C257J
KM41C257Z
KM41C25BP
KM41C258J
KM41C464P
KM424C256Z
KM41C464
PB20
KM64258
KM68512
KMM5362000
KM23C2
64k 30-pin SIMM
KM23C4000A
KM41C4000BJ
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NN511662
Abstract: No abstract text available
Text: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech
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NN511662
16bit
NN511662L
G0Q153Ö
NNS11662
NN511662XX
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Untitled
Abstract: No abstract text available
Text: a F in a l Am2964B Advanced Micro Devices Dynamic Memory Controller DISTINCTIVE CHARACTERISTICS • • • Dynamic Memory Controller for 16K and 64K MOS dynamic RAMs 8 -Bit Refresh Counter for refresh address generation, has clear input and terminal count output
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Am2964B
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LH2464-12
Abstract: LH2464-10 lh2464 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30
Text: LH2464 FEA T U R ES NMOS 256K 64K x 4 Dynamic RAM DESCRIPTION • 65,536 x 4 bit organization • A c c e s s times: 100/120/150 ns (M AX.) • C y c le times: 200/220/260 ns (MIN.) • P a g e mode, Read-M odify-W rite operation T h e LH 2 4 6 4 is a 65,536 x 4 bit d yn a m ic R A M fabri
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LH2464
18-pin,
300-mil
DIP18-P-300)
LH2464-10
LH2464-12
LH2464-10
dynamic ram nmos 18 pins
LH2464-15
64k nmos dynamic ram
TOED30
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23c2100
Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 — KM41C4002-10 KM41C4000A-7
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KM41C4000-8
KM41C4000-10
KM41C4000L-8
KM41C4000L-10
KM41C4001-8
KM41C4001-10
KM41C4002-8
KM41C4002-10
KM41C4000A-7
KM41C4000A-8
23c2100
KM28C64-20
KM28C16-15
KM28C256J15
KM28C64-25
KM28C65-20
KM28C256-15
KM28C64A25
KM28C64J-20
KM28C64A-15
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