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    64K X 8 BIT DYNAMIC RAM Search Results

    64K X 8 BIT DYNAMIC RAM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    4164-15FGS/BZA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006ZA) Visit Rochester Electronics LLC Buy
    4164-12JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 120 NS ACCESS TIME - Dual marked (8201008EA) Visit Rochester Electronics LLC Buy
    4164-15JDS/BEA Rochester Electronics LLC 4164 - DRAM, 64K X 1, 3-STATE OUTPUTS, 150 NS ACCESS TIME - Dual marked (8201006EA) Visit Rochester Electronics LLC Buy
    TMS4030JL Rochester Electronics LLC TMS4030 - DRAM, 4KX1, 300ns, MOS, CDIP22 Visit Rochester Electronics LLC Buy
    MC27C64-20 Rochester Electronics LLC 27C64 - 64K (8K x 8) EPROM Visit Rochester Electronics LLC Buy

    64K X 8 BIT DYNAMIC RAM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI LSIs MH6408AD-15 5 2 4 2 8 8 -B IT 6 5 536-W O RD BY 8-BIT DYNAMIC RAM D E S C R IP T IO N The MH6408AD is 65536 word x 8 bit dynamic RAM and consists of eight industry standard 64K x 1 dynamic RAMs in leadless chip carrier. The mounting of leadless chip carriers on a ceramic


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    PDF MH6408AD-15 MH6408AD

    1A43

    Abstract: 4464 ram m4464 4464 64k 4464 texas
    Text: ADVANCE INFORMATION TM4464LU8 65,536 BY 8 BIT DYNAMIC RAM MODULE OCTOBER 9 1 8 5 - • 6 5 .53 6 X 8 Organization REVISED NOVEMBER 1 9 8 5 U SINGLE-IN-LINE PACKAGE t o p v ie w i Single 5-V Supply (10% Tolerance 30-Pin Singie-in-Line Package (SIP) Utilizes Two 64K X 4 Dynamic RAMs in


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    PDF TM4464LU8 30-Pin 4464LU 1A43 4464 ram m4464 4464 64k 4464 texas

    smj4164

    Abstract: SMJ4256 20D17
    Text: SMJ4256 262,144-BIT DYNAMIC RANDOM ACCESS MEMORY NOVEMBER 198B - • 262,144 x 1 Organization • Single 5-V Supply • JEDEC Standardized Pinout • Upward Pin Compatible with SMJ4164 64K Dynamic RAM • JD PACKAGE (TOP VIEW) A 8£ AOQ ACCESS ]V S S 15 ] C A S


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    PDF SMJ4256 144-BIT SMJ4164 SMJ4256-12 SMJ4256-15 SMJ4256-20 smj4164 SMJ4256 20D17

    Untitled

    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 7fl 3749762 FUJITSU MICROELECTRONICS I>e| 374T7bH 0DQ30aH fi W ~ 70C 0 3 0 2 2 0T V i ' 2 3 * 7 FU JITSU • M B 8 5 1 0 3 A -1 2 , M B 8 5 1 0 3 A -1 5 MOS 65,536 x 8-Bit Dynamic RAM Module Daporlptlon The Fujitsu MB85103A Is a 64K x 8 dynamic RAM high density


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    PDF 374T7bH 0DQ30aH MB85103A MB8264A 18-pad 22-pln MSP-22S-CC02)

    MC68451

    Abstract: MVME101 MVME215 MVME319 MVME110-1 MC68010 MC68881 MC6810 mvme202 MVME204
    Text: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System


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    PDF 16-bit MVME101 MC68000 32Kbyte MVME110-1 MC68010 socket10. MVME121 MC68451 MVME101 MVME215 MVME319 MVME110-1 MC68881 MC6810 mvme202 MVME204

    MVME101

    Abstract: MC68451 MVME110-1 cache ram 64k x 8 MVME205 MVME215 mvme202 1Mb static ram MVME050 MVME123
    Text: Same as MVME120 except 512Kb Dynam ic RAM. MVME121 VMEbus P rocessor M odule with 12.5 MHz MC68010 CPU, 128Kb of dual-ported Dynamic RAM, three 16-bit tim ers, and two sockets for 2K x 8 to 64K x 8 bytes EPROM user provided . MVME025, MVME050, or other VMEbus System


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    PDF 16-bit MVME101 MC68000 32Kbyte MVME110-1 MC68010 socketME131 512Kb MVME202 MVME101 MC68451 MVME110-1 cache ram 64k x 8 MVME205 MVME215 mvme202 1Mb static ram MVME050 MVME123

    Untitled

    Abstract: No abstract text available
    Text: Prelim inary FUJITSU MOS Memories • M B 8 2 6 4 A - 1 2 - W , M B 8 2 6 4 A - 1 5 - W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also


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    PDF 536-Bit MB8264A-W 004pn

    MB8264A-15

    Abstract: MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W
    Text: P relim inary F U J IT S U M O S M e m o rie s M B 8 2 6 4 A -1 2 -W , M B 8 2 6 4 A -1 5 -W NMOS 65,536-Bit Dynamic Random Access Memory With Wide Temperature Range Description The MB8264A-W is a 64K x 1 dynamic RAM Intended for operation over the case temperature range - 5 5 °C to 110°C. The part is also


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    PDF MB8264A-12-W, MB8264A-15-W 536-Bit MB8264A-W MB8294A-12-W MB82S4A-1B-W MB8264A-15 MB8264A-12 MB8264A-12-W MB8264A-15-W MB8264A MB82S4A-1S-W

    V53C864

    Abstract: No abstract text available
    Text: L f VITELIC V53C864 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT FAST PAGE MODE CMOS DYNAMIC RAM f 70/70L 80/80L 10/10L 12/12L M ax. RA S Access Tim e, tRAC HIGH PERFORMANCE V53C864 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Time, (tCAA) 35 ns


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    PDF V53C864 70/70L 80/80L 10/10L 12/12L V53C864 V53C864L

    Untitled

    Abstract: No abstract text available
    Text: kf VITELIC V53C866 FAMILY HIGH PERFORMANCE, LOW POWER 64K X 8 BIT STA TIC COLUMN CMOS DYNAMIC RAM 70/70L HIGH PERFORMANCE V53C866 80/80L 10/10L 12/12L M ax. R A S Access Tim e, *RAC 70 ns 80 ns 100 ns 120 ns M ax. Column Address Access Tim e, (tCAA) 35 ns


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    PDF V53C866 80/80L 70/70L V53C866 10/10L 12/12L V53C866L

    Untitled

    Abstract: No abstract text available
    Text: Preliminary ^ » • M B 8 5 1 0 3 A -1 2, M B 8 5 1 0 3 A -1 5 MÛS 65,536 x 8-Bit Dynamic RAM Module D e s c rip tio n The Fujitsu MB85103A is a 64K x 8 dynam ic RAM high density mem ory m odule. It c o n sists o f e ig h t MB8264A DRAMs in 18-pad LCC packages m ounted on a 22-pin m u ltila yer ceram ic substrate.


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    PDF MB85103A MB8264A 18-pad 22-pin MDL-22S-CC02)

    Untitled

    Abstract: No abstract text available
    Text: Preliminary M O S • M M e m o r ie s B 8 2 6 4 A - 1 2 - W , M ^ F U JIT S U B 8 2 6 4 A - 1 5 - W N M O S 65,536-Bit Dynamic Random Access Mem ory W ith W ide Tem perature Range Description The MB8264A-W is a 64K x 1 dynam ic RAM intended for operation


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    PDF 536-Bit MB8264A-W -12-W B8264A -15-W

    Untitled

    Abstract: No abstract text available
    Text: P re lim in a re F U JIT SU • M B 8 5 1 0 1 A -1 0 , M B 8 5 1 0 1 A -1 2 , M B 8 5 1 0 1 A -1 5 MOS 65,536 X 4-Bit Dynamic RAM Module D e s c rip tio n The Fu jitsu MB85101A is a 64K x 4 d ynam ic RAM high density m em ory m odule. It c o n sists of fo u r MB8264A ORAMs in 18-pad


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    PDF MB85101A MB8264A 18-pad 22-pin 22-Lead MDL-22S-CC01)

    AK41128

    Abstract: AK42064
    Text: HIGH DENSITY DYNAMIC RANDCM ACCESS MEMORY MODULES ACCUTEK DESCRIPTION The Accutek family of high density dynamic RAM modules are comprised of 64K x 1 or 256K x 1 dynamic RAMs packaged in LCCs or PLCCs along with chip capacitors, mounted to multi-layer ceramic


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    PDF 150ns AK41128 AK42064

    KMCJ532512

    Abstract: KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL
    Text: FUNCTION GUIDE MEMORY ICs 1. 1.1 INTRODUCTION Dynamic RAM KM41C1000C-6 1Mx1 KM41C1000CL-6 KM41C1000CSL-6 25 6Kx4 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 4Mbit— 4Mx1 T KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KM41C4000CL-5 KM41C4000CL-6 KM41C4000CL-7


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    PDF KM41C1000C-6 KM41C1000CL-6 KM41C1000CSL-6 KM44C256C-6 KM44C256CL-6 KM44C256CSL-6 KM41C4000C-5 KM41C4000C-6 KM41C4000C-7 KM41C4000C-8 KMCJ532512 KM23C1000-20 KM28C64B KMM594 KM718B90-12 zip 40pin 30-pin simm memory "16m x 8" KM41C4000C-6 KM41C16000ALL KM48V2104AL

    Untitled

    Abstract: No abstract text available
    Text: NN511662 series EDO Hyper Page Mode CMOS 64K x 16bit Dynamic RAM N PN > a< DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­


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    PDF NN511662 16bit NN511662L 00Q153fl NNS11662 NN511662XX

    mcm6665

    Abstract: MC6809E A7 B14 MC68B09E mc6821 16k x 1 ram vdg 6847 details MCM-4116 sn74ls244 motorola
    Text: M MOTOROLA SN74LS783/ MC6883 SN74LS785 SYNCHRONOUS ADDRESS MULTIPLEXER The SN74LS783/MC68B3 and SN74LS785 bring together the MC6809E (M PU), the MC6847 (Color Video Oisplay Generator) and dynamic RAM to form a highly effective, compact and cost effec­ tive computer and display system.


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    PDF SN74LS783/MC68B3 SN74LS785 MC6809E MC6847 SN74LS783/MC6883 LS785 MCM68364) MC6809E, MC6800, mcm6665 MC6809E A7 B14 MC68B09E mc6821 16k x 1 ram vdg 6847 details MCM-4116 sn74ls244 motorola

    KM41C1000BJ

    Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page


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    PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z

    KM68512

    Abstract: 12BKX8 km6865b
    Text: MEMORY ICs FUNCTION GUIDE 1. INTRODUCTION 1.1 Dynamic RAM CMOS n— — 256K bit 1M bit 105 ELECTRONICS MEMORY ICs — FUNCTION GUIDE 4M bit 106 ELECTRONICS MEMORY ICs FUNCTION GUIDE 107 ELECTRONICS MEMORY ICs FUNCTION GUIDE CM O S 108 ELECTRONICS MEMORY ICs


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    PDF 010/J/T KM68512 12BKX8 km6865b

    KM424C256Z

    Abstract: KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ
    Text: MEMORY ICs FUNCTION GUIDE 2. PRODUCT GUIDE 2.1 Dynamic RAM Capacity 256K bit Part Number KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C258Z Features Packages Remark 256K X 1 256K X 1 256K X 1 256K X 1 70/80/100 70/80/100


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    PDF KM41C256P KM41C255J KM41C258Z KM41C257P KM41C257J KM41C257Z KM41C25BP KM41C258J KM41C464P KM424C256Z KM41C464 PB20 KM64258 KM68512 KMM5362000 KM23C2 64k 30-pin SIMM KM23C4000A KM41C4000BJ

    NN511662

    Abstract: No abstract text available
    Text: NN511662 series EDO Hyper Page Mode CMOS 64Kx 16bit Dynamic RAM NPN/A> DESCRIPTION The NN511662 series is a high performance CMOS Dynamic Random Access Memory organized as 65,536 words by 16 bits. The NN511662 series is fabricated with advanced CMOS technology and designed with innovative design tech­


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    PDF NN511662 16bit NN511662L G0Q153Ö NNS11662 NN511662XX

    Untitled

    Abstract: No abstract text available
    Text: a F in a l Am2964B Advanced Micro Devices Dynamic Memory Controller DISTINCTIVE CHARACTERISTICS • • • Dynamic Memory Controller for 16K and 64K MOS dynamic RAMs 8 -Bit Refresh Counter for refresh address generation, has clear input and terminal count output


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    PDF Am2964B

    LH2464-12

    Abstract: LH2464-10 lh2464 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30
    Text: LH2464 FEA T U R ES NMOS 256K 64K x 4 Dynamic RAM DESCRIPTION • 65,536 x 4 bit organization • A c c e s s times: 100/120/150 ns (M AX.) • C y c le times: 200/220/260 ns (MIN.) • P a g e mode, Read-M odify-W rite operation T h e LH 2 4 6 4 is a 65,536 x 4 bit d yn a m ic R A M fabri­


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    PDF LH2464 18-pin, 300-mil DIP18-P-300) LH2464-10 LH2464-12 LH2464-10 dynamic ram nmos 18 pins LH2464-15 64k nmos dynamic ram TOED30

    23c2100

    Abstract: KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15
    Text: MEMORY ICs 1. INTRODUCTION 1.1 Dynamic RAM :§ SAMSUNG Electronics FUNCTION GUIDE FUNCTION GUIDE MEMORY ICs 4M bit 4M X 1 KM41C4000-8 - KM41C4000-10 KM41C4000L-8 - KM41C4000L-10 KM41C4001-8 KM41C4002-8 1M X 4 KM41C4001-10 KM41C4002-10 KM41C4000A-7


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    PDF KM41C4000-8 KM41C4000-10 KM41C4000L-8 KM41C4000L-10 KM41C4001-8 KM41C4001-10 KM41C4002-8 KM41C4002-10 KM41C4000A-7 KM41C4000A-8 23c2100 KM28C64-20 KM28C16-15 KM28C256J15 KM28C64-25 KM28C65-20 KM28C256-15 KM28C64A25 KM28C64J-20 KM28C64A-15